Mechanism of dynamic strain aging and characterization of its effect on the low-cycle fatigue behavior in type 316L stainless steel

Low-cycle fatigue tests were carried out in air in a wide temperature range from 20 to 650 °C with strain rates of 3.2 × 10⁻⁵–1 × 10⁻² s⁻¹ for type 316L stainless steel to investigate dynamic strain aging (DSA) effect on the fatigue resistance. The regime of DSA was evaluated using the anomalies associated with DSA and was in the temperature range of 250–550 °C at a strain rate of 1 × 10⁻⁴ s⁻¹, in 250–600 °C at 1 × 10⁻³ s⁻¹, and in 250–650 °C at 1 × 10⁻² s⁻¹. The activation energies for each type of serration were about 0.57–0.74 times those for lattice diffusion indicating that a mechanism other than lattice diffusion is involved. It seems to be reasonable to infer that DSA is caused by the pipe diffusion of solute atoms through the dislocation core. Dynamic strain aging reduced the crack initiation and propagation life by way of multiple crack initiation, which comes from the DSA-induced inhomogeneity of deformation, and rapid crack propagation due to the DSA-induced hardening, respectively.     

Angular effects in the sputtering of Cr from stainless steel by 10 keV H3

Energy and angular distributions of Cr⁺ sputtered from stainless steel by 1.6 × 10⁻¹⁵ J (10 keV) H⁺₃ are reported as a function of angle of incidence. For more normal incidence, the peak in the energy distribution occurs in the vicinity of 3.2 × 10⁻¹⁹ J (2 eV), the average energy is approximately 1.12 × 10⁻¹⁸ J (7 eV), and the angular distribution is close to cosine. Toward glancing incidence, the peak energy increases to ˜6.4 × 10⁻¹⁹ J (4 eV), the average energy increases to ˜1.28 × 10⁻¹⁸ J (8.0 eV), and the angular distribution shows a distinct maximum in the forward direction. These results are discussed in terms of the increasing role of surface recoils in the sputtering mechanism at glancing incidence.     

Effects of ion implantation on poly(dimethylsilylene-co-methylphenylsilylene)

The effects of ion implantation on the electrical and structural properties of poly(dimethylsilylene-co-methylphenylsilylene), (DMMPS) thin films have been investigated. Ionic species of krypton, arsenic, fluorine, chlorine, and sulfur were implanted at energies ranging from 35 to 200 keV and with doses of up to 1 × 10¹⁶ ion cm². The conductivity of the polymer increased upon implantation reaching a maximum value of 9.6 × 10⁻⁶ (Ω cm)⁻¹ for the case of arsenic ion at a dose of 1 × 10¹⁶ ion cm² and energy of 100 keV. The results showed that ion implantation induced conduction in DMMPS was primarily due to structural modifications of the material brought about by the, energetic ions. Infrared analysis and Auger electron spectroscopy showed evidence for the formation of a silicon carbide-like structure upon implantation.     

Isothermal release of tritium from neutron-irradiated Li17Pb83

Isothermal release experiments were carried out to study the tritium recovery from lithium-lead alloy Li₁₇Pb₈₃ in which tritium was produced by irradiation with thermal neutrons. The experimental results indicate that the tritium recovery was incomplete within two hours at 200 °C. At temperatures above the melting point, the tritium release rates have been significantly increased and found to be controlled by the diffusion in the alloy. The determined diffusion coefficients of tritium in the alloy are 6.6 × 10⁻⁶, 7.8 × 10⁻⁶ and 9.5 × 10⁻⁶ cm²/s at 300, 400 and 500°C, respectively.     

Ion beam synthesis and recrystallization of amorphous SiGe/SiC structures

Si_1−xGe_x amorphous layers implanted with different doses of carbon (between 5 × 10¹⁵ and 2 × 10¹⁷ cm⁻² and annealed at 700°C and 900°C have been analyzed by Raman and Infrared spectroscopies, electron microscopy and Auger electron spectroscopy. The obtained data show the synthesis of amorphous SiC by implanting at the highest doses. In these cases, recrystallization only occurs at the highest annealing temperature (900°C). The structure of the synthesized SiC strongly depends on the implantation dose, in addition to the anneal temperature. For the highest dose (2 × 10¹⁷ cm⁻²), crystalline β-SiC is formed. Finally, a strong migration of Ge towards the Si substrate is observed from the region where SiC precipitation occurs.     

Irradiation growth during fission fragment and proton bombardment of uranium

Irradiation growth results are reported for annealed -uranium at 373 K under 3.5 MeV proton bombardment. Two such experiments were performed at damage rates of 6.9 × 10⁻⁸ and 9.3 × 10⁻⁸ dpa/s to doses of 0.0072 and 0.0077 dpa, respectively. In each case the growth rate remained constant throughout the experiment. The respective damage normalised growth rates were 5.6 × 10⁻³ and 7.1 × 10⁻³ dpa⁻¹. Comparison between proton growth rates and published in-reactor growth rates is made by converting the more usual fuel damage parameters, such as burn-up, to dpa. Damage calculations, using the NRT damage model, are presented which indicate that, in uranium, each fission event produces 100 000 displacements. The reported growth rate of annealed, polycrystalline -uranium at 353 K, during thermal neutron irradiation, represents a damage normalised growth rate of 9.6 × 10⁻³ dpa⁻¹, which is not substantially different from the present proton results. This similarity of proton and fission growth rates appears to be contrary to the earlier finding of Thompson (1960), who deduced that proton bombardment produced two orders of magnitude less growth than fission fragments. Thompson concluded that thermal spikes played a dominant role in irradiation growth. Thompson's results and analysis are reassessed in the light of recent range data and damage models and found to be consistent with the present results in both magnitude and direction. The results are also inconsistent with Buckley's original model to the extent that thermal spikes were thought to play an important role. From a consideration of primary recoil spectra it is shown that the concept of the anisotropic aggregation of point defects to form vacancy and interstitial clusters, which is at the centre of that model, remains viable. Furthermore, similar though slightly less growth would be expected during proton bombardment. This was indeed found to be the case, the growth rate with protons being about half that with fission fragments.     

Time scales of transient enhanced diffusion: free and clustered interstitials

Transient enhanced diffusion (TED) and electrical activation after nonamorphizing Si implantations into lightly B-doped Si multilayers shows two distinct timescales, each related to a different class of interstitial defect. At 700°C, ultrafast TED occurs within the first 15 s with a B diffusivity enhancement of > 2 × 10⁵. Immobile clustered B is present at low concentration levels after the ultrafast transient and persists for an extended period ( 10²–10³ s). The later phase of TED exhibits a near-constant diffusivity enhancement of ≈ 1 × 10⁴, consistent with interstitial injection controlled by dissolving {113} interstitial clusters. The relative contributions of the ultrafast and regular TED regimes to the final diffusive broadening of the B profile depends on the proportion of interstitials that escape capture by {113} clusters growing within the implant damage region upon annealing. Our results explain the ultrafast TED recently observed after medium-dose B implantation. In that case there are enough B atoms to trap a large proportion of interstitials in Si---B clusters, and the remaining interstitials contribute to TED without passing through an intermediate {113} defect stage. The data on the ultrafast TED pulse allows us to extract lower limits for the diffusivities of the Si interstitial (D_I > 2 × 10⁻¹⁰ cm²s⁻¹) and the B interstitial(cy) defect (D_Bi > 2 × 10⁻¹³ cm²s⁻¹) at 700°C.     

Defect evolution in MeV ion-implanted silicon

Lightly doped silicon samples of both n- and p-type have been implanted with low doses of H, B and Si ions using energies between 1 and 6 MeV. The resulting electrically active point defects were characterized by deep level transient spectroscopy (DLTS) and several of these defects involve oxygen and/or carbon, two major impurities in as-grown crystalline silicon. Both interstitial- and vacancy-type defects are observed; in particular, interstitial carbon is found to migrate at room temperature with a diffusion constant of 1 × 10⁻¹⁵ cm² s⁻¹ and is effectively trapped by interstitial oxygen atoms. The concentration of implantation-induced defects increases linearly with dose but the defect production decreases at high enough dose rates. This dose rate effect depends on the ion mass and is qualitatively predicted by computer simulations of the defect reaction kinetics.     

The excitation power density effect on the Si nanocrystals photoluminescence

In the present work we have studied the photoluminescence (PL) behavior from Si nanocrystals (NCs) as a function of the excitation power density and annealing time. The NCs were produced in a SiO₂ matrix by Si implantations from room temperature (RT) up to 700 °C, followed by post-annealing in N₂ atmosphere at high temperature. With this aim we have changed the excitation power density (from 2 × 10⁻³ W/cm² up to 15 W/cm²) and the annealing time (from 10 min up to 15 h). The strong PL signal, which at 15 W/cm² is composed by a single-peak structure (650–1000 nm) centered at around 780 nm, expands up to 1200 nm showing a two-peak structure when measured at 20 × 10⁻³ W/cm². The peak structure located at the short wavelength side is kept at 780 nm, while the second peak, starting at around 900 nm, redshifts and increases its intensity with the implantation temperature and annealing time. The effect of the annealing time on the PL spectra behavior measured at low excitation power agrees by the first time with the Si NC growth according to quantum confinement effects.     

Release of nitrogen from SiOxNy films during RBS measurement

We have found that nitrogen atoms are released very rapidly from ultrathin SiO_xN_y films (2.6 nm) during RBS measurement with 500 keV He⁺ ions. The release behavior strongly depends on the preparation technique of the SiO_xN_y films. There is no release from the film prepared by thermal nitridation of SiO₂, while 80% of the nitrogen atoms are released from the film prepared by plasma nitridation at a fluence of 1×10¹⁶ cm⁻². The release cross-section for plasma SiO_xN_y films is of the order of 10⁻¹⁶ cm². This large cross-section cannot be explained by a simple recoil mechanism. The nitrogen release is also observed under irradiation with 5–10 keV electrons though the cross-section is of the order of 10⁻¹⁹ cm². These findings suggest that the observed nitrogen release is an electronic excitation induced process.     

The thermal conductivity of UO2 vapor

The thermal conductivity, λ of a saturated vapor over UO_1.96 is calculated in the temperature range 3000–6000 K. The calculation shows that the contribution to λ from the transport of reaction enthalpy dominates all other contributions. All possible reactions of the gaseous species UO₃, UO₂, UO, U, O, and O₂ are included in the calculation. We fit the total thermal conductivity to the empirical equation λ = exp(a+ b/T+cT+dT² + eT³), with λ in cal/(cm s K), T in kelvins, a = 268.90, B = − 3.1919 × 10⁵, C = −8.9673 × 10⁻², d = 1.2861 × 10⁻⁵, and E = −6.7917 × 10⁻¹⁰.     

Light emission from oxygen covered Al and Cu surfaces

Ion beam induced light emission is used to investigate the sputtering yield, S_O, of oxygen atoms on the surfaces of a polycrystalline copper and an Al(1 1 1) target. Under Ar⁺ and Ne⁺ ion bombardment of Al(1 1 1) and polycrystalline copper targets, spectral lines of Cu I and Al I emitting from sputtered excited atoms are measured as a function of the oxygen partial pressure, wavelength and beam energy. The light emission for two Al I lines (3082 and 3962 Å) and Cu I lines (3247 and 3274 Å) are proportional to the oxygen partial pressure (1×10⁻⁴ Torr). Above 2×10⁻⁴ Torr, the light intensities start to decrease which is consistent with other measurements. From saturated-oxygen covered target surfaces, light intensities of Al I and Cu I lines are measured as a function of time and oxygen partial pressures. The sputtering yields could be determined from the curves of spectral lines directly. For 10 and 20 keV Ar⁺ ions bombarding the copper surface, the oxygen sputtering yields are 0.34 and 0.22 (atoms/ion), respectively. The same copper target was bombarded by Ne⁺ ions at 5 and 10 keV, the oxygen sputtering yields are 0.87 and 0.59, respectively. For 10, 15, and 20 keV Ar⁺ bombarding an Al(1 1 1) target, the obtained sputtering yields are 0.44, 0.31, and 0.2 (atoms/ion), respectively.     

Pumping experiment of water on B and LaB6 films with an electron beam evaporator

The pumping characteristic of water vapor on boron and lanthanum hexaboride films formed with an electron beam evaporator have been investigated in high vacuum between 10⁻⁴ and 10⁻³ Pa. The measured initial maximum pumping speeds of water for the fresh B or LaB₆ films with a deposition amount from 2.3 × 10²¹ to 6.7× 10²¹ molecules/m² separately formed on a substrate are 3.2–4.9 m³/sm², and the saturation values of adsorbed water on these films are 2.1 ×10²⁰−1.3 × 10²¹ H₂O molecules/m².     

Low temperature neutron irradiation effects on microstructure and tensile properties of molybdenum

Polycrystalline molybdenum was irradiated in the hydraulic tube facility at the High Flux Isotope Reactor to doses ranging from 7.2 × 10⁻⁵ to 0.28 dpa at 80 °C. As-irradiated microstructure was characterized by room-temperature electrical resistivity measurements, transmission electron microscopy (TEM) and positron annihilation spectroscopy (PAS). Tensile tests were carried out between −50 and 100 °C over the strain rate range 1 × 10⁻⁵ to 1 × 10⁻² s⁻¹. Fractography was performed by scanning electron microscopy (SEM), and the deformation microstructure was examined by TEM after tensile testing. Irradiation-induced defects became visible by TEM at 0.001 dpa. Both their density and mean size increased with increasing dose. Submicroscopic three-dimensional cavities were detected by PAS even at 0.0001 dpa. The cavity density increased with increasing dose, while their mean size and size distribution was relatively insensitive to neutron dose. It is suggested that the formation of visible dislocation loops was predominantly a nucleation and growth process, while in-cascade vacancy clustering may be significant in Mo. Neutron irradiation reduced the temperature and strain rate dependence of the yield stress, leading to radiation softening in Mo at lower doses. Irradiation had practically no influence on the magnitude and the temperature and strain rate dependence of the plastic instability stress.     

Investigation of the radiation hardness on semiconductor devices using the ion micro-beam

Variation of the ion beam induced charge (IBIC) pulse heights due to ion irradiation was investigated on a Si pn diode and a 6H-SiC Schottky diode using a 2 Mev He⁺ micro-beam. Each diode was irradiated with a focused 2 MeV He⁺ micro-beam to a fluence in the range of 1×10⁹–1×10¹³ ions/cm². Charge pulse heights were analyzed as a function of the irradiation fluence. After a 2 MeV ion irradiation to the Si pn junction diode, the IBIC pulse height decreased by 15% at 9.2×10¹² ions/cm². For the SiC Schottky diode, with a fluence of 6.5×10¹² ions/cm², the IBIC pulse height decreased by 49%. Our results show that the IBIC method is applicable to evaluate irradiation damage of Si and SiC devices and has revealed differences in the radiation hardness of devices dependent on both structural and material.     

Development of the Climb Induced Glide concept to describe in-reactor creep of fcc materials

The Climb Induced Glide model (CIG) for irradiation creep is developed using a plastic flow law which has been successfully applied in the correlation of Type 316 stainless steel rupture data. This model is used to predict the stress and temperature dependence of irradiation creep and the transition from irradiation to thermal creep. The predictions of this model are compared and found to be qualitatively consistent with experimental data and microstructural information. This model allows prediction of deformation behavior covering strain rates from 1 × 10⁻¹³ s⁻¹ to 1 s⁻¹.     

Effect of tin on the irradiation growth of polycrystalline zirconium

Measurements of irradiation growth of polycrystalline Zr-1.5% Sn and Zr-0.1% Sn alloys at 353 K and 553 K have been made following fast neutron irradiation with fluences up to 3.1 × 10²⁵ n/m². At 353 K, growth of Zr-1.5% Sn virtually saturated at a strain of 4.5 × 10⁻⁴ after a fluence of ˜10²⁴ n/m². At this temperature, Zr-0.1% Sn continued to grów until ˜ 2 × 10²⁵ n/m², when the strain levelled off at ˜ 1.2×10⁻³. At 553 K, Zr-1.5% Sn initially grew about twice as fast as the 0.1% Sn alloy, but both eventually reached the same steady state rate of ˜ 2.4 × 10⁻²⁹ m²/n. Comparison of the data for the 1.5% Sn material with those for Zircaloy-2 from earlier work reveals that at 353 K, growth is suppressed by the presence of Sn atoms, which may serve as vacancy traps. However, at 553 K, minor additions and impurities in Zircaloy-2 (such as Fe, Ni, Cr and O) play an important role and cannot be neglected. The growth behaviour of Zr-0.1% Sn is similar to that of pure polycrystalline zirconium, especially at 353 K, indicating that the addition of Sn at this concentration does not strongly influence the growth of zirconium.     

Outgassing measurement of the waveguide module for a steady state LHCD antenna

An outgassing rate is measured using a waveguide module during a long pulse r.f. injection at 3.7 GHz in order to operate a lower hybrid current drive (LHCD) antenna in steady state. The waveguide module consists of four sub-waveguides which are made of dispersion-strengthened copper and copper-plated stainless steel with cooling channels to control its working temperature between 100 and 500 °C. The waveguide module shows the high power capability of power density up to 200 MW m⁻² after short term conditioning. A low outgassing rate of about 2 × 10⁻⁷ Pa m³ s⁻² m⁻² is obtained during r.f. injection up to 150 MW m⁻² at a working temperature of T=300 °C after 450 °C baking. Long pulse r.f. injection is effective for reduction of the outgassing by about 1/100. Outgassing during r.f. injection depends on the working temperature but is independent of the r.f. power density after sufficient conditioning. The calculation code taking desorption, adsorption and diffusion processes into account can show time behavior of outgassing in the waveguide module. A quasi-constant outgassing of about 10⁻⁷ Pa m³ s⁻¹ m⁻² is observed at a power density of 150 MW m⁻² in 1800 s injection while keeping a saturated temperature at the center of the module below 120 °C by using water cooling. The outgassing properties obtained indicate that steady state operation of an LHCD antenna is feasible without a large pumping system.     

Surface morphology of the Ar ion-irradiated Ag/Si(1 1 1) system

In the present study, a 500 Å thin Ag film was deposited by thermal evaporation on 5% HF etched Si(1 1 1) substrate at a chamber pressure of 8×10⁻⁶ mbar. The films were irradiated with 100 keV Ar⁺ ions at room temperature (RT) and at elevated temperatures to a fluence of 1×10¹⁶ cm⁻² at a flux of 5.55×10¹² ions/cm²/s. Surface morphology of the Ar ion-irradiated Ag/Si(1 1 1) system was investigated using scanning electron microscopy (SEM). A percolation network pattern was observed when the film was irradiated at 200°C and 400°C. The fractal dimension of the percolated pattern was higher in the sample irradiated at 400°C compared to the one irradiated at 200°C. The percolation network is still observed in the film thermally annealed at 600°C with and without prior ion irradiation. The fractal dimension of the percolated pattern in the sample annealed at 600°C was lower than in the sample post-annealed (irradiated and then annealed) at 600°C. All these observations are explained in terms of self-diffusion of Ag atoms on the Si(1 1 1) substrate, inter-diffusion of Ag and Si and phase formations in Ag and Si due to Ar ion irradiation.     

The influence of He/dpa ratio and displacement rate on microstructural evolution: a comparison of theory and experiment

A kinetic model was developed to investigate the influence of the displacement rate and helium generation rate on microstructural evolution in austenitic stainless steels. The model integrates the rate equations describing the evolution of point defects, small point defect clusters, helium-vacancy clusters, and the larger cavity size distribution that is responsible for observable swelling. Cavity (bubble) nucleation is accounted for by the helium-vacancy cluster evolution, while void formation occurs when bubbles grow beyond a critical size in the larger cavity distribution.

A series of ion irradiation experiments were used to both calibrate the model and to provide a comparison between model predictions and experimental observations. The experiments involved single and dual-beam irradiations of solution annealed AISI-316 stainless steel at 873 K. The displacement rates were in the range of 2 × 10⁻³ to 1 × 10⁻² dpa/s and the helium-to-dpa ratios were in the range of 0 to 50 appm He/dpa. The maximum displacement dose was 25 dpa. The experiments revealed a significant effect of helium on both the dislocation structure and the cavity distribution. The model predictions of helium effects over a broad range of He/dpa ratios and displacement rates were consistent with experimental observations.