ZnS:Li_2O 薄膜的电致发光特性

本文报道了新型较高亮度的 Zn S:L i2 O蓝色薄膜电致发光 ;烧结了新型的蓝色发光材料 Zn S:L i2 O,用电子束蒸发制备出 Si O2 夹层结构的 Zn S:L i2 O蓝色电致发光器件 ;通过吸收光谱、电致发光光谱、激发电压与发光强度的关系等研究了 Zn S:L i2 O薄膜发光特性。认为 Zn S:L i2 O薄膜电致发光可能是由 Zn填隙和氧替硫引起的 ,氧替位能抑制通过硫空位产生的无辐射跃迁使蓝色发光增强     

几种蓝色发光薄膜电致发光器件

近年来,为实现全色平板显示器,人们对薄膜电致发光器件进行了积极的研究。实际应用的最大障碍是缺少蓝色发光器件。作为一种蓝色发光的 EL 器件,人们对 Tm 掺杂的 ZnS 薄膜进行了研究,但是这类器件所能达到的最大发光亮度很低(10—12cd/m~2)其次,ZnS:Tm EL 器件的发光颜色也不合     

以SrS为基质的新型电致发光材料

引言以 ZnS 为基质的薄膜电致发光显示系统已进入商业实用阶段,然而,目前所使用的颜色只限于黄色和绿色,因此迫切需要研究出新的具有高效的红色和蓝色发射的薄膜电致发光材料。从过去二十年来的研究结果看,新材料已没有可能在 ZnS 系统中找到。必须寻找其它的发光基质材料,最近,已有报道得到了以 CaS 和 SrS 为基质的红色和蓝色发射的     

溅射ZnS：TbOF薄膜绿色电致发光器件

用二极射频溅射法制作了ZnS:TbOF薄膜绿色交流电致发光器件,研究了溅射条件和掺氧对器件性能的影响,发现在发光层中同时掺氧可以改善器件性能.     

SrS:CeCl_3薄膜的高亮度蓝色EL

用于薄膜电致发光(EL)器件的 SrS:CeCl_3发光层的结晶性能直接受与其邻近的底层膜的影响。在一种以强立方(111)取向 ZnS 薄膜作为底层的 EL 薄膜器件中实现了明亮的蓝色发射,在5KHz 正弦电压激发下,器件的最大亮度力100nt。根据 x 射线衍射图和发光层的光致发光光谱讨论了 EL特性。     

碱土金属硫化物的多颜色薄膜电致发光显示器件

引言目前,交流薄膜电致发光器件研究工作的重点是放在多色显示上。虽然 ZnS:Mn 的薄膜电致发光屏具有长寿命、高亮度,已进入实用阶段,但发光颜色只是单一的橙黄色。为得到多色显示,人们集中研究了 ZnS 掺杂各种稀土离子、发射波长覆盖很宽的材料,但结果不会令人满意,主要是亮度太低,不应用能来制作多色薄膜电致发光器件。     

SrS薄膜制备工艺中硫的热解效应

一、前言在薄膜电致发光(TFEL)器件发光层中,主要使用的是以 ZnS 为基质的橙色 ZnS:Mn,绿色 ZnS:Tb 以及红色 ZnS:Sm 发光材料。随后又出现了蓝绿色 SrS:Ge,红色 CaS:Eu 等稀土激活的 SrS、CaS 类碱土金属硫化物。其目的在于扩展彩色 EL 显色范围。     

薄膜EL器件

这是有关用作显示器件的薄膜 EL 器件的发明.近来,碱土类硫硒碲化合物为基质、Ce激活发光层的薄膜 EL 器件,由于它能得到较高亮度的蓝色发光而受到重视。这种薄膜EL 器件,通常是在 SrS 和 SrSe 碱土类硫硒碲化合物(用溅射方法或真空蒸发方法形成)中,把其中一种化合物作为基质,用 Ce 激活的薄膜用来做发光层。以 SrS 或 SrSe 为基质,用 Ce 激活的发光层作为薄膜 EL 器件,能够得到 ZnS 基质发光EL 器件所不可能达到的高亮度蓝色发光。     

用电子束蒸发和射频磁溅射制备ZnS:Tb,F电致发光薄膜的差别

一引言近十年来,经细致的研究后,ZnS:Mn电致发光(EL)薄膜器件已经达到实用阶段。但ZnS:Mn荧光体只能给出橙黄色辐射光。最近,人们集中于彩色EL器件的研究,如绿色 ZnS:Tb,F_(?)蓝色SrS:Ce和红色CaS:Eu。它们当中,绿色ZnS:Tb,F薄膜是最突出的,并达到实用水平。ZnS:Tb,F荧光膜最初在1968年由Kahng提出,因这种发光中心是以Tb F_3分子形式掺入,所以称之为分子中心。制备方法是用两个蒸发源,一     

采用溅射ZnS:TbOF的高效绿色TFEL

一、引言把掺稀土氟化物的 ZnS 薄膜(ZnS:ReF_3)作为薄膜电致发光(TFEL)器件有源层的想法是由 Kahng 提出的。以 ZnS:ReF_3为基质的 TFEL 器件有时称 LUMOCEN(分子中心发光—Luminescence from mole-     

Specific features of luminescence spectra of ZnS:O and ZnS:Cu(O) crystals in the context of the band anticrossing theory

The anticrossing band theory, which specifies the change induced in the band structure by an isoelectronic impurity substantially distorting the lattice, is used to interpret the nature and specific features of the complex self-activated luminescence spectra of ZnS:O and ZnS:Cu(O). The light emission involving the self-activated luminescence centers SA and SAL, the spectral dependence of the emission components in relation to the content of dissolved oxygen, and the effects of the centers on the formation of bound excitons are considered. It is found that some absorption bands in the near-infrared spectral region are associated with the transitions between sublevels of the conduction band split in the presence of oxygen. On the basis of the experimental data, a heretofore unknown band model of ZnS:O is developed, and the Cu-induced modifications of the model are discussed. The effect of oxygen-containing agglomerates on the spectra is established. It is suggested that these agglomerates can be responsible for green emission from ZnS:Cu. The results complement the previously reported data of similar studies of ZnS:O and ZnS:Cu(O).     

核/壳结构ZnS:Mn/ZnS量子点光发射增强研究

利用水溶性前驱体材料在水性介质中制备了ZnS:Mn和ZnS:Mn/ZnS核/壳结构量子点(QDs,quantum dots),并用X射线衍射(XRD)、光致发光(PL)对ZnS:Mn和ZnS:Mn/ZnS核/壳结构QDs的结构和发光性能进行研究.ZnS:Mn和ZnS:Mn/ZnS QDs XRD谱与标准谱吻合,根据De...     

Optical and electrical properties of copper-incorporated ZnS films applicable as solar cell absorbers

Un-doped and Cu-doped ZnS (ZnS:Cu) thin films were synthesized by Successive Ion Layer Absorption and Reaction (SILAR) method. The UV-visible absorption studies have been used to calculate the band gap values of the fabricated ZnS:Cu thin films. It was observed that by increasing the concentration of Cu²⁺ ions, the Fermi level moves toward the edge of the valence band of ZnS. Photoluminescence spectra of un-doped and Cu-doped ZnS thin films was recorded under 355 nm. The emission spectrum of samples has a blue emission band at 436 nm. The peak positions of the luminescence showed a red shift as the Cu²⁺ ion concentration was increased, which indicates that the acceptor level (of Cu²⁺) is getting close to the valence band of ZnS.     

热蒸发制备的硫化锌薄膜的结构分析

用双舟热蒸发制备了掺稀土硫化锌薄膜，用ｘ射线衍射技术对硫化锌粉末和所制薄膜的晶体相结构进行研究，发现硫化锌薄膜的晶体结构与硫化锌粉末的晶体结构不同。薄膜晶体的生长受诸多因素影响，有择优取向生长趋势，是二维层状结构沿ｃ轴方向的密堆积。这些研究为高新材料的研制提供了参考。     

Absorption, luminescence excitation, and infrared transmittance spectra of ZnS(O)-ZnSe(O) crystals in the context of the band anticrossing theory

The paper reports the results of optical studies of the absorption, luminescence excitation, and infrared transmittance spectra for the set of ZnS(O)-ZnSe(O) alloys with highly inconsistent properties of anions. It is shown that the band anticrossing theory applied to the alloys provides a general interpretation of their specific optical properties not properly understood previously. A band model of transitions with absorption in a complex multiband formed due to oxygen is presented. The specific features of the absorption and luminescence excitation spectra are interpreted to gain an insight into the distribution and states of oxygen in the crystals. The effect of oxygen on the transmittance band of the ZnS-ZnSe alloys in the near-infrared spectral region is considered. A new approach to the interpretation of the infrared absorption bands associated with oxygen is developed. The calculation algorithms that provide a means for determining the spectral position of the bands in relation to the dissolved oxygen content are suggested.     

退火温度对ZnS/PS薄膜的晶体结构和光电性质的影响

用脉冲激光沉积法(PLD)在多孔硅(PS)衬底上生长ZnS薄膜,分别在300℃、400℃和500℃下真空退火。用X射线衍射(XRD)和扫描电子显微镜(SEM)研究了退火对ZnS薄膜的晶体结构和表面形貌的影响,并测量了ZnS/PS复合体系的光致发光(PL)谱和异质结的I-V特性曲线。研究表明,ZnS薄膜仅在28.5°附近存在着(111)方向的高度取向生长,由此判断薄膜是单晶立方结构的-βZnS。随着退火温度的升高,-βZnS的(111)衍射峰强度逐渐增大,且ZnS薄膜表面变得更加均匀致密,说明高温退火可以有效地促进晶粒的结合并改善结晶质量。ZnS/PS复合体系的PL谱中,随着退火温度升高,ZnS薄膜的自激活发光强度增大,而PS的发光强度减小,说明退火处理更有利于ZnS薄膜的发光。根据三基色叠加的原理,ZnS的蓝、绿光与PS的红光相叠加,ZnS/PS体系可以发射出较强的白光。但过高的退火温度会影响整个ZnS/PS体系的白光发射。ZnS/PS异质结的I-V特性曲线呈现出整流特性,且随着退火温度的升高其正向电流增加。     

多孔硅的孔隙对硫化锌/多孔硅光电性质的影响

为了研究衬底多孔硅(PS)的孔隙对硫化锌/多孔硅(ZnS/PS)复合体系的光学性能和电学性质的影响,采用脉冲激光沉积方法在不同孔隙度的PS衬底上沉积了硫化锌薄膜。利用X射线衍射仪、扫描电子显微镜、荧光分光光度计和Ⅰ-Ⅴ特性曲线分别研究了PS衬底上ZnS薄膜的晶体结构、表面形貌和ZnS/PS复合体系的光学和电学性质。结果表明,沉积的ZnS薄膜呈立方相晶体结构,沿β-ZnS(111)晶向择优取向生长。随着衬底PS孔隙的增多,ZnS薄膜衍射峰的强度减小,且薄膜表面出现一些空洞和裂缝;在ZnS/PS复合体系的光致发光谱中,PS的发光相对于未沉积ZnS薄膜的PS有所蓝移,随着PS孔隙的增多,该蓝移量增大,而且在光谱中间550nm左右出现了一个新的绿光发射,归因于ZnS的缺陷中心发光。ZnS的蓝、绿光与PS的红光相叠加,整个ZnS/PS复合体系呈现出较强的白光发射。ZnS/PS异质结的Ⅰ-Ⅴ特性曲线呈现出与普通二极管相似的整流特性,在正向偏置下,电流密度较大,电压降较低;在反向偏置下,电流密度接近于0。随着衬底PS孔隙的增多,正向电流增大。该项研究结果为固态白光发射器件的实现奠定了基础。     

Analytical Expression of Relaxation Luminescence in ZnS：Er^3＋ Thin Films

The relaxation luminescence of ZnS:Er^3 thin films is studied with luminescence dynamics model.The excitation and emission processes of Er^3 in ZnS host are described through the resonant energy transfer method.Taking the energy storing effect of the traps into account,an expression is obtained by using the convolution formula,which may describe luminescence decay process containing the multiple relaxation luminescence peaks.The experimental results confirm that the relaxation characteristics of the electroluminescence are related to the carriers captured by the bulk traps.     

花状纳米结构ZnS:Cu的制备与光学性质研究

采用水热法合成了具有花状纳米结构的ZnS:Cu粉末.利用X射线衍射(XRD)、场发射扫描电子显微镜(FESEM)、透射电子显微镜(TEM)和荧光光谱仪研究了在不同正硅酸四乙酯(TEOS)含量的条件下制备的样品的物相、形貌与光致发光(PL)性质.测试结果表明:制备的ZnS:Cu样品都具有立方相闪锌矿结构;由于TEOS分子...