BaO-TiO2-3SiO2∶Eu3+发光材料的结构与发光性质的研究

采用溶胶-凝胶法制备了BaO-TiO2-3SiO2∶Eu3+发光材料,通过DTA-TG、IR、XRD、SEM、激发和发射光谱图对材料的结构和发光性能进行了研究。结果表明,100℃～200℃之间出现明显失重现象,说明在此过程中凝胶中的吸附水和乙醇等有机物大量挥发,600℃出现失重阶梯并放出热量,发生晶型转变;制备的样品中主要存在Ti-O-Si和Ti-O键;XRD测试证明,材料主要在600℃～1000℃之间发生晶型转变,当经800℃退火处理后,主要以Ba2TiSi2O8晶体结构存在时,材料发光最好。材料制备的最佳退火温度为800℃,Eu3+在BaO-TiO2-3SiO2基质中的掺杂量为1.80%(摩尔分数),发光最好。在612 nm监测波长下,测得的最佳激发波长为可见光465 nm,即在465 nm光激发下,材料发射强度高、单色性好的红光。     

Eu~(3+)∶ZnO_(1-x)S_x-SiO_2发光材料的制备与发光性质

采用溶胶凝胶法与沉淀法相结合的方法,制备Eu3+∶ZnO1-xSx-SiO2红色发光材料,通过DTA-TG、IR、XRD、TEM、EDS、激发和发射光谱等测试手段,研究材料的结构和发光性能。DTA-TG结果表明,样品在400℃以上,样品结构基本达到稳定状态;IR测试表明,样品中主要存在Si-O-Si键、Zn-S键、Si-O4基团,温度达到800℃时Zn-S键变强,且Si-O-Si三维网络结构的形成有利于Eu3+的掺杂和发光;1000℃时Si-O4基团发生分裂现象,分为三个峰,同时部分ZnS被氧化为ZnO,该变化破坏了SiO2形成的大的三维网络结构,使Si-O-Si桥氧键断开,形成非桥氧键,此结构不利于Eu3+的发光,说明800℃时样品的发光性能最好。XRD测试表明,样品属于晶态,主要以ZnO、ZnS、Zn2SiO4的形式存在。TEM和EDS结果表明,样品呈类球状,含有Zn、O、Si、Eu、S元素,其中S的含量约为2.40%(原子分数),说明S被有效地掺入样品中。激发和发射光谱测试表明,在612 nm检测波长下,其最佳激发波长为紫外光395 nm,最佳退火温度为800℃,Eu3+最佳掺杂量为10%(原子分数),并证明Eu3+∶ZnO1-xSx-SiO2材料发光强度约是Eu3+∶ZnO-SiO2发光强度的6倍,说明S的引入可以有效的提高发光性能。     

Tb~(3+)掺杂ZnWO_4基绿色荧光粉的发光性能

以柠檬酸为螯合剂,采用沉淀法制备了稀土Tb3+掺杂的ZnWO4绿色荧光粉前驱体。通过差热分析(DTA)、热重分析(TG)、X射线衍射(XRD)等手段对产物进行了表征。结果表明,当退火温度低于700℃时,得到的样品为非晶态,而高于850℃退火处理后为单斜结构。使用荧光分光光度计研究了Tb3+在ZnWO4基质中的发光性质。结果显示,ZnWO4:Tb3+样品在544nm波长光的监测下于200~300nm处出现由W→O及Tb→O跃迁共同作用产生的重叠激发峰和系列Tb3+的f-f跃迁锐峰,其中位于488nm处的激发峰非常显著,对应于Tb3+的7F6→5D4跃迁。说明该法制备的荧光粉ZnWO4:Tb3+能够被蓝光有效激发,可以与广泛使用的蓝光LED芯片的输出波长相匹配。在488nm波长光的激发下观察到ZnWO4粉末中Tb3+的544nm(5D4→7F5)强的特征发射,说明ZnWO4:Tb3+粉末可作为白光LED的绿色补偿荧光粉。当以267nm激发ZnWO4:Tb3+时,有宽的WO2-4特征发射峰和Tb3+的5D4→7F6及5D4→7F5跃迁产生的发射峰,随着Tb3+掺杂浓度的增加,WO2-4的特征发射强度逐渐降低,而Tb3+的5D4→7F5跃迁强度增大,表明Tb3+与WO2-4之间有能量转移。     

溶胶-凝胶法制备Ca3Al2O6：Eu3+红色荧光粉及其发光性能

采用溶胶-凝胶法合成Ca3Al2O6：Eu3+红色荧光粉,通过XRD、SEM、荧光光谱分别对样品的结构、形貌以及发光性能进行表征,讨论煅烧温度、Eu3+掺杂浓度以及电荷补偿剂对样品发光性能的影响.结果表明：实验所得样品的结构与Ca3Al2O6相同,Eu3+掺杂并没有改变其晶体结构.合成的荧光粉在394 nm近紫外光激发下发出615 nm明亮的红光.样品的红光强度随着煅烧温度的升高先增加后减弱,最佳烧结温度为1200℃.同样红光强度也随着Eu3+掺杂浓度的增加先增加后减弱,最佳Eu3+掺杂浓度为4%（摩尔分数）.加入电荷补偿剂后样品的发光强度均增强,其中加入K+后发光增强的效果最显著.该铝酸盐红色荧光粉性质稳定,在白光LED近紫外芯片激发中具有潜在的应用.     

Eu~(3+)/Tb~(3+)掺杂硼硅酸盐玻璃的发光性能

为了弥补目前白光LED显色指数的不足,用传统熔融法制备了Eu3+/Tb3+掺杂的硼硅酸盐玻璃,研究了Eu3+/Tb3+掺杂的硼硅酸盐玻璃在391 nm和462 nm激发下的下转换发光性能和能量传递特征。结果表明,用462 nm激发Eu3+掺杂的硼硅酸盐玻璃样品,发现随着Eu3+浓度的增加,Eu2O3含量为0.5%(摩尔分数)时达到发射强度最大值。对于Eu3+/Tb3+共掺的硼硅酸盐玻璃,在462 nm处呈现最强激发峰,其最强发射峰为612 nm的红光。而且随着Tb3+浓度的增加,Eu3+和Tb3+之间的能量传递加强,大大提高了612 nm红光的发射强度。     

Tb~(3+)掺杂BiPO_4基绿色荧光粉的共沉淀法合成及发光性质

以(NH4)2HPO4为沉淀剂,采用共沉淀法合成Tb3+掺杂BiPO4基绿色荧光粉。通过DTA-TG、XRD、IR等方法对荧光粉的结构、组成进行了表征。结果表明,在室温条件下得到了纯六方相BiPO4∶Tb3+,当退火温度为400℃时,开始出现单斜相,温度升高到600℃以上时晶相转变为纯单斜相BiPO4∶Tb3+。利用激发光谱和发射光谱研究了Tb3+在BiPO4基质中的发光性能,六方相和单斜相BiPO4∶Tb3+样品均可发光,在紫外光377 nm紫外光的激发下测定的六方相和单斜相BiPO4∶Tb3+发射光谱的峰位相同,主要发射峰出现在544 nm处强的5D4→7F5跃迁和490 nm、590 nm、622 nm处弱的5D4→7F6、5D4→7F4、5D4→7F3跃迁。当BiPO4∶Tb3+为单斜相时Tb3+在BiPO4基质中的发光强度明显强于六方相BiPO4∶Tb3+。     

用溶胶-凝胶法制备Y2O3-SiO2∶Tb3+发光材料

采用溶胶-凝胶法制备了Y2O3-SiO2∶Tb3+发光材料.研究了Tb3+浓度、Y2O3和SiO2配比、烧结温度、烧结时间对发光强度的影响及其发光行为.     

离子置换法制备的掺铽钨酸钙薄膜的结构、成分与性能研究

采用离子置换法直接在室温条件下合成出了发光性能优良的CaWO4:Tb3+薄膜,并利用X射线衍射仪、X射线光电子能谱仪、荧光光谱仪等对薄膜的相结构、成分和元素价态及发光性能进行了分析。研究表明,采用离子置换法合成的CaWO4:Tb3+薄膜属于四方晶系;成分及元素价态分析表明,经过掺杂处理后,薄膜中含有Tb元素,并且掺入的Tb元素表现为+3价;当薄膜在含Tb3+离子的溶液中处理8 min后,膜中的Tb元素含量可达3%。在紫外光的激发下,CaWO4:Tb3+薄膜发射出波长为489 nm、543 nm、585 nm和618 nm的光,分别对应Tb3+离子5D4→7F6、7F5、7F4、7F3能级的跃迁,其中543 nm处的发光最强。由此可见,离子置换法成功地解决了无法利用电化学技术制备出稀土钨酸盐材料的难题。     

用溶胶-凝胶法制备Y_2O_3-SiO_2:Tb~(3+)发光材料

采用溶胶-凝胶法制备了Y2O3-SiO2∶Tb3+发光材料。研究了Tb3+浓度、Y2O3和SiO2配比、烧结温度、烧结时间对发光强度的影响及其发光行为。     

稀土掺杂荧光材料CaMoO4:Eu3+的制备及发光性研究

以钼酸铵、硝酸钙和三氧化二铕为原料,通过化学沉淀法制备稀土掺杂的发红光材料CaMoO4:Eu3+,并利用X射线衍射、激发发射光谱对粉体的结构、发光性能进行了表征.实验结果表明,在反应溶液pH值为7、反应温度为60℃、烧结温度为900℃、掺入物质的量分数为25%的Eu3+的工艺条件下制备了质量性能优良的CaMoO4:Eu3+粉体.该荧光粉可被394 nm的紫外光和465 nm的可见蓝光有效激发,发射光谱在616 nm处发光强度最大,是以电偶极跃迁5D0→7F2为主导地位的红光发射,CaMoO4:Eu3+粉体是一种可能应用在白光LED上的红色荧光材料.     

Luminescence properties of BaAl₁₂O₁₉:Tb,Ce and energy transfer between Ce³⁺,Tb³⁺

BaAl12O19:Tb,Ce phosphors were prepared by sol-gel technique,the crystalline structures of samples characterized by XRD,and the luminescence properties and energy transfer between Ce3+ and Tb3+ were investigated.The results indicated that the emission intensity and the excitation wavelength range of Tb3+ increased when Ce3+ was doped.It demonstrated that the Ce3+ added in the BaAl12O19:Tb could deliver energy to Tb3+,and Ce3+ was not luminous by itself.The relative emission intensity of Tb3+ at wavelength of 548 nm was the strongest by Tb3+/Ce3+ ratio of 2:1,when excited at 310 nm,which was the characteristic adsorption wavelength of Ce3+.     

白光LED用LaPO4:Eu3+红色荧光粉的合成与表征

利用水热法制备了性能稳定的红色荧光粉LaPO4:Eu3+,同时研究了不同的Eu3+浓度、煅烧温度对荧光粉发光性能的影响.通过X射线粉末衍射(XRD)和扫描电子显微镜(SEM)来表征荧光粉的晶体结构和颗粒大小及形貌;用激发光谱和发射光谱以及荧光衰减曲线来表征荧光粉的荧光性能.结果表明:未煅烧时前躯体主要是六方晶相LaPO4·0.5H2O,煅烧温度在900℃时,所制备样品为单斜相LaPO4:Eu3+;SEM图像显示5 at.%Eu3+掺杂LaPO4呈椭球形,颗粒长约为500 nm,宽约为300 nm.最大发射波长和激发波长分别为592 nm和393 nm,发射光谱中592 nm和612 nm的发射峰对应的是Eu3+离子的5D0→7F1和5D0→7F2跃迁.其荧光寿命为3.32 ms.     

掺Tb3+硅基材料的发光性质

采用溶胶-凝胶技术制备了掺Tb3+的硅基材料并测试了其三维荧光光谱、激发光谱和发射光谱,结果显示最佳激发波长为240nm,最强荧光波长为540nm,在540nm光下的激发光谱峰为240nm,在240nm光激发下的发射光谱显示Tb3+的特征发射光谱,产生4条谱带,分别是492nm(5D4-7F6)、542nm(5D4-7F5)、593nm(5D4-7F4)及614nm(5D4-7F3)。     

Photoluminescence of SrGdGa_3O_7∶RE (RE=Ce~(3 ), Pr~(3 ), Tb~(3 )) under VUV-UV Excitation

SrGdGa3 O7belongstothelargefamilieswhosegeneralchemicalformulaisAMM′3 O7(A =Ca ,Sr ,Ba ;M =La ,Gd ,Y ;M′ =Al,Ga) .Thesecom poundshavemelilitestructure .Structuralinvestiga tionsindicatethatSrGdGa3 O7formstetragonalcrystalswithspacegroupP 4 2 1m .Theunit…     

Luminescence characteristics of LiCaBO_3:Tb~(3+) phosphor for white LEDs

A novel green phosphor,LiCaBO3:Tb3+,was synthesized by solid state reaction method,its luminescence characteristics were investigated,and the formation of phosphors were confirmed by X-ray powder diffraction(XRD).Its excitation band extended from 220 to 400 nm,which was coupled well with the emission of UV LED(350-410 nm).It exhibited a strong green emission located at 544 nm with chromatic coordination(0.25,0.58).The emission intensities of LiCaBO3:Tb3+ phosphor were influenced by varying Tb3+ concentratio...     

Luminescence properties of YAl3(BO3)4 phosphors doped with Eu3+ ions

YAl3(BO3)4: Eu3+ phosphors were prepared by the conventional solid state reaction. The phase structure and morphology were investigated by X-ray diffraction (XRD) and scanning electron microscope (SEM). Doping YAl3(BO3)4: Eu3+ phosphors with concentration of Eu3+ ions of 0, 2, 5, 8 and 10 mol% were studied and their luminescent properties at room temperature were discussed. The excitation spectrum of Y0.95Eu0.05Al3(BO3)4 was composed of a broad band centered at about 252 nm and a group of lines in the longer wavelength re-gion. In the emission spectra, the peak wavelength was about 614 nm under a 252 nm UV excitation. The optimal doping concentration of Eu<3+ ions in YAl3(BO3)4: Eu3+ phosphors was 8 mol%.     

Photoluminescence Characteristics of Gd2Mo3O9 ： Eu Phosphor Particles by Solid State Reaction Method

Eu^3＋-doped Gd2Mo3O9 was prepared by solid-state reaction method using Na2CO3 as flux and characterized by powder X-ray diffractometry. According to X-ray diffraction, this material belonged to a tetragonal system with space group I41/α. The effects of flux content and sintering temperature on the luminescent properties were investigated with the emission and excitation spectra. The results showed that flux content and sintering temperature had effects on the luminescent properties, the optimized flux content and the best temperature was 3 % and 800 ℃ respectively. The excitation and emission spectra also showed that this phosphor could be effectively excited by C-T band （280 nm）, ultraviolet light 395 nm and blue light 465 nm. The wavelengths at 395 and 465 nm were nicely fitting in with the widely applied output wavelengths of ultraviolet or blue LED chips. Integrated emission intensity of Gd2Mo3O9 ： Eu was twice higher than that of Y2O2S ： Eu^3 ＋ under 395 nm excitation. The Eu^3＋ doped Gd2Mo309 phosphor may be a better candidate in solid-state lighting applications.     

Luminescence properties of BaAl12O19:Tb,Ce and energy transfer between Ce3+, Tb3+

BaAl₁₂O₁₉:Tb,Ce phosphors were prepared by sol-gel technique, the crystalline structures of samples characterized by XRD, and the luminescence properties and energy transfer between Ce³⁺ and Tb³⁺ were investigated. The results indicated that the emission intensity and the excitation wavelength range of Tb³⁺ increased when Ce³⁺ was doped. It demonstrated that the Ce³⁺ added in the BaAl₁₂O₁₉:Tb could deliver energy to Tb³⁺, and Ce³⁺ was not luminous by itself. The relative emission intensity of Tb³⁺ at wavelength of 548 nm was the strongest by Tb³⁺/Ce³⁺ ratio of 2:1, when excited at 310 nm, which was the characteristic adsorption wavelength of Ce³⁺.     

红色荧光粉La2O3：Eu3＋的合成及发光性质

利用复合沉淀法制备了性能稳定的红色荧光粉La2O3：Eu3＋,同时研究了煅烧温度及掺杂Eu3＋浓度对La2O3：Eu。’发光性能的影响．通过X射线粉末衍射（XRD）和扫描电子显微镜（SEM）来表征荧光粉的晶体结构和颗粒大小及形貌：用激发光谱和发射光谱以及荧光衰减曲线来袁征荧光粉的荧光性能．结果表明：煅烧温度在900℃时,所制备样品为六方晶系La2O3：Eun;SEM图显示掺杂Eu0＋含量为5％的La2O3颗粒直径为15μm左右．最大发射波长和激发波长分别为626nm和396nm,发射光谱中596nm和626nm的发射峰对应的是Eu3＋离子的0D—F1和5D—F2跃迁,其荧光寿命为0．754ms．     

溶胶-凝胶法制备Sr2SiO4:Tb3+绿色荧光粉及其发光性能

采用溶胶-凝胶法合成了一系列适合紫外-近紫外激发的(1-X)Sr₂SiO₄:XTb3+(X=0,0.01,0.02,0.03,0.04,0.05,0.06)绿色荧光粉,并采用X射线衍射(XRD)、扫描电子显微镜(SEM)和荧光光谱(PL)研究了样品的结构及发光性能.由XRD的检测结果可知,合成样品属于单斜晶系的β-Sr₂SiO₄相.由SEM图可知,所有样品都呈无规则块状结构.当监测波长为546 nm,样品的激发光谱的主峰位于370 nm处,属于Tb3+的4f-4f特征跃迁吸收.当激发波长分别为285 nm和250 nm,所有样品在488 nm,547 nm,586 nm,623 nm处都出现了1个强发射峰,分别对应Tb3+的5D₄→7F₆、5D₄→7F₅、5D₄→7F₄和5D₄→7F₃电子跃迁.最强发射峰位于547 nm处,呈现特征为绿光发射.随Tb3+掺杂量增大,发射强度呈现出先增大后减小的变化趋势,即存在浓度猝灭效应.当Tb3+掺杂量为X=0.03时,样品的发光强度最大.