共查询到20条相似文献,搜索用时 5 毫秒
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Rao K. Srinivasa Madhuri T. Krishna Leela Sairam T. Manish Vali Shaik Shoukath Chand Ch. Gopi Sravani K. Girija 《Microsystem Technologies》2022,28(12):2697-2704
Microsystem Technologies - In this paper, we have designed and simulations of RF MEMS shunt switch. The electro-mechanical and electromagnetic analysis of the switch have been done using COMSOL... 相似文献
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Savin Evgeny A. Kirtaev Roman V. Zhukov Andrey A. Didyk Pavel I. 《Microsystem Technologies》2019,25(1):51-55
Microsystem Technologies - This article presents the results of the research, design and a series of manufacturing steps of an RF-MEMS switch to be used in space communication systems. Design and... 相似文献
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Bala Subramanian M. Joshitha C. Sreeja B. S. Nair Prita 《Microsystem Technologies》2018,24(5):2379-2387
Microsystem Technologies - Design, fabrication and characterization of a novel RF switch is proposed in this paper. The multiport RF MEMS switch provides a single input multiple output novel... 相似文献
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Microsystem Technologies - In this paper, we have design a proposed step structure RF MEMS switch for K-band applications. The non-uniform meander structure is implemented for both optimized and... 相似文献
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Gandhi S. Girish Govardhani I. Narayana M. Venkata Rao K. Srinivasa 《Microsystem Technologies》2022,28(12):2765-2774
Microsystem Technologies - In this paper, SP4T (Single Pole four throw) type RF MEMS Switch is designed for Satellite applications. The beam thickness of the switch is varying from... 相似文献
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Rizehbandi Sara Reshadi Midia Baghelani Masoud Khademzadeh Ahmad 《Microsystem Technologies》2018,24(12):4729-4735
Microsystem Technologies - Although micro-electro-mechanical switches are beneficial in small sizes, high levels of power handling, compatibility with CMOS process, wide bandwidth and zero power... 相似文献
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Sravani K. Girija Mallika D. Kali Naga Meghana G. Divya U. Naga Bhavani Chand Ch. Gopi Vasantha K. Rao K. Srinivasa 《Microsystem Technologies》2020,26(8):2569-2574
Microsystem Technologies - This paper presents, the design and simulation of RF MEMS shunt capacitive switch. The electromechanical and electromagnetic analysis of the switch has been done using... 相似文献
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利用表面微加工工艺设计了一种双悬臂梁支撑的欧姆接触式MEMS开关,开关的材料为Au。通过对开关驱动电压的理论分析得出,悬臂梁的刚度越低,下拉电压就会越小;又因为刚度与悬臂梁厚度的三次方呈比例,所以,降低刚度最有效的办法就是减少梁的厚度。通过对开关的性能仿真发现:开关的闭合电压为44V;触点的接触力为22.45μN;谐振频率为25.5kHz。开关闭合时,触点接触后并非立即稳定,而是要弹跳数次后才趋于稳定,此现象增加了开关从闭合到稳定的时间。驱动电压为50,60 V时开关的弹跳时间分别为174.94,66.84μs,由此可见,通过适当增加电压可有效降低开关时间和由闭合到稳定的时间。 相似文献
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Rizehbandi Sara Reshadi Midia Baghelani Masoud Khademzadeh Ahmad 《Microsystem Technologies》2018,24(12):4737-4737
Microsystem Technologies - Unfortunately, the affiliation details of the authors have been published incorrectly. The correct details are given below. 相似文献
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N. J. R. Muniraj 《Microsystem Technologies》2011,17(1):31-33
The RF applications like voltage controlled oscillators, tunable filters, resonators etc., requires tunable capacitors in their designs. This paper presents the design of wide range MEMS tunable capacitors for RF applications. This design consists of an air suspended bottom plate and a fixed top plate. The top fixed plate and the suspended bottom plate form the tunable capacitor. The capacitance range of this tunable capacitor is from 69.172 to 138.344?nF. This range is wider compared with the conventional MEMS tunable capacitors of tuning ranges in pico Farads. The fabrication process is similar to that of the existing standard integrated circuit fabrication processes, which makes this design suitable for integrated RF applications. 相似文献
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Microsystem Technologies - This paper presents the design and simulation of Hybrid type RF MEMS switch for satellite communication application. The Hybrid switch beam is having non-uniform meanders... 相似文献
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Rao K. Srinivasa Vasantha K. Kumar P. Ashok Guha Koushik Sravani K. Girija 《Microsystem Technologies》2020,26(8):2381-2387
Microsystem Technologies - This paper reports on the simulation and analysis of Ohmic SPDT (single pole double throw) switch for telecommunication application. A comparative study is performed by... 相似文献
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低驱动电压k波段电容耦合式RFMEMS开关的设计 总被引:3,自引:0,他引:3
设计了一种低驱动电压的电容耦合式射频微机械(RF MEMS)开关.RF MEMS开关采用共面波导传输线,双电极驱动,悬空金属膜采用弹性折叠梁支撑.使用MEMS CAD软件CoventorWare、微波CAD软件HFSS,分别仿真了开关的力学性能和电磁性能,仿真结果表明:开关的驱动电压为2.5V,满足低驱动电压的设计目标;开关开态的插入损耗约为0.23 dB@20 GHz,关态的隔离度约为18.1 dB@20 GHz.最后给出了这种RF MEMS开关的微制造工艺. 相似文献
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Rao K. Srinivasa Sailaja B. V. S. Vineetha K. V. Kumar P. Ashok Guha Koushik Sravani K. Girija 《Microsystem Technologies》2021,27(2):503-513
Microsystem Technologies - This paper deals with the study of shunt capacitive RF switches. Comparative study is done on non-uniform designed structures, which are simulated using finite element... 相似文献
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A structure for a piezoelectrically actuated capacitive RF MEMS switch that is continuously variable between the ON state and the OFF state has been proposed. The device is based on variable capacitance using a cantilever fixed at both ends that is actuated using a lead zirconate titanate thin film. Because the device is contactless, the reliability issues common in contact-type RF MEMS switches can be avoided. A comprehensive mathematical model has been developed in order to study the performance of the device, and allow for design optimization. Electrical measurements on test structures have been compared with the performance predicted by the model, and the results used to design a prototype RF MEMS switch. The model and simulations indicate the proposed switch structure can provide an insertion loss better than 0.7 dB and an isolation of more than 10 dB between 6 and 14 GHz with an actuation voltage of 22.4 V. The state of the device is continuously variable between the ON state and the OFF state, with a tunable range of capacitance of more than 15\(\times \). 相似文献
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Kumar P. Ashok Sravani K. Girija Sailaja B. V. S. Vineetha K. V. Guha Koushik Rao K. Srinivasa 《Microsystem Technologies》2018,24(12):4909-4920
Microsystem Technologies - In this paper the RF-MEMS switch with series–shunt configuration on a single quartz substrate is presented to achieve high isolation than the individual series or... 相似文献