Electron spin relaxation in solids-an application to spontaneously occurring radical centre in phenol-formaldehyde resins

An outline of electron spin-relaxation is briefly presented with mechanisms and processes of spin-lattice relaxation in ionic and amorphous solids. Electron spin resonance (EPR) and pulsed EPR measurements were performed in the temperature range 4-300 K on a radical occurring in a dried resol phenol-formaldehyde resin. The radical appears in a small concentration of about 1/spl times/10/sup 16/ radicals/g in 30/spl deg/C dried samples and the number of the radicals increases continuously with time up to 2/spl times/10/sup 17/ radicals/g after 100 days. Computer simulations of the EPR spectrum show that breaking of the dimethylene ether linkage probably forms the radical during synthesis reactions. Electron spin-lattice relaxation rate increases relatively slowly on heating and at <80 K is determined by interactions with two-level tunnelling systems in the polymer structure. For higher temperatures the relaxation is governed by interactions with centres having energy levels split by 298 cm/sup -1/. Phase relaxation is described by the phase memory time with rigid lattice limit T/sub M//sup 0/=2 /spl mu/s. This time is shortened above 100 K by thermally activated radical molecule motions with activation energy 85 cm/sup -1/. The electron spin echo envelope modulation (ESEEM) spectrum shows unresolved peaks at /sup 1/H indicating strong molecular dynamics and delocalisation of the unpaired electron.     

The impact of LOC structures on 670-nm (Al)GaInP high-power lasers

We investigate the potential of large optical cavity (LOC)-laser structures for AlGaInP high-power lasers. For that we study large series of broad area lasers with varying waveguide widths to obtain statistically relevant data. We study in detail I/sub th/, /spl alpha//sub i/, /spl eta//sub i/, and P/sub max/, and analyze above-threshold behavior including temperature stability and leakage current. We got as expected for LOC structures minimal /spl alpha//sub i//spl les/1 cm/sup -1/ resulting in /spl eta//sup d/=1.1 W/A for 64/spl times/2000 /spl mu/m/sup 2/ uncoated devices. We obtain total output powers /spl ges/3.2 W (qCW) and /spl ges/1.5 W (CW) at 20/spl deg/C.     

Analysis of relaxation parameters and their distributions using fractional polarization thermally stimulated discharge currents

It is shown that, in the analysis of fractional polarization thermally stimulated depolarisation current, the values obtained for the activation energy W and the preexponential factor /spl tau//sub 0/ depend on which one is assumed constant. The elemental peak position and shape change significantly for simulations where we assume that the activation energy is variable and the preexponential factor is constant, or vice-versa. A mathematical expression for the current is proposed in the case where W /spl tau//sub 0/ and are both variable. The uncertainties affecting the relaxation parameters produce a broadening of the theoretical peak. The minimum uncertainties in the relaxation parameters are estimated. For a current peak at temperature T/sub m/, a calculated distribution of W with width /spl ap/ kTm, or a calculated distribution of /spl tau/ with width /spl ap/ /spl tau//sub 0/ is physically meaningless.     

Characterization of Si implants in p-type GaN

Si ion implantation into p-type GaN followed by rapid thermal annealing (RTA) in N/sub 2/ has been performed. X-ray diffraction analyses indicate that ion-implanted damage remains even with 1050/spl deg/C, 60 s RTA. By varying implantation and postimplantation annealing conditions, we could convert carrier concentration from p-type 3 /spl times/ 10/sup 17/ cm/sup -3/ into n-type 2 /spl times/ 10/sup 17/ cm/sup -3/ /spl sim/2 /spl times/ 10/sup 19/ cm/sup -3/. It was found that typical activation energies of Si implants in p-GaN are lower than 10 meV. Such activation energies are smaller than those observed from epitaxially grown Si-doped GaN films. A deep donor level with activation energy of 60 meV was also found from some samples. Photoluminescence studies show that the peak appears at 372 nm might be related to implantation-induced defects. It was also found that a green emission band could be observed from Si-implanted GaN. It was shown that such a green emission is related to the yellow band observed from epitaxially grown Si-doped GaN. The transport properties of these Si-implanted samples were also studied.     

Dielectric and conductive spectra of the composite of barium titanate and LiClO/sub 4/-doped polyethylene oxide

Dielectric and conductive frequency spectra in a 10 mHz-10 GHz range have been measured for a composite consisting of barium titanate (BaTiO/sub 3/) inclusions dispersed in a LiClO/sub 4/-doped polyethylene oxide (Li-PEO) matrix with volume fraction /spl Phi/ = 0-40%. Pure Li-PEO behaves as a dielectric showing a segmental-mode dielectric relaxation at high frequencies (dielectric regime) and transfers to an ionic conductor below 10 MHz (conductive regime). BaTiO/sub 3/ is a ferroelectric having a very large dielectric permittivity and spontaneous polarization. The introduction of BaTiO/sub 3/ into Li-PEO caused a rapid increase in permittivity in the dielectric regime. In the conductive regime, the composite exhibited an additional relaxation at a frequency related to the ratio of DC conductivity of Li-PEO and the permittivity of BaTiO/sub 3/. This relaxation was attributed to accumulation of dissociated Li/sup +/ and ClO4/sup o/ns at the inclusion/matrix interface which resulted in an increase of effective permittivity and a decrease of effective conductivity. Quantitative analyses based on mixing laws for the two-phase spherical dispersion system have shown that the Bruggeman equation accurately predicted the /spl Phi/-dependence of the effective permittivity over the entire frequency range. Regarding the effective conductivity, it predicted values lower than the observed. We attributed this discrepancy to the spontaneous polarization of BaTiO/sub 3/, which induced ion trapping to reduce the DC conductivity of Li-PEO matrix.     

High-power/high-brightness diode-pumped 1.9-/spl mu/m thulium and resonantly pumped 2.1-/spl mu/m holmium lasers

We report high power (>36 W) with beam propagation factor M/sup 2//spl sim/2 in a diode end-pumped Tm:LiYF/sub 4/ (Tm:YLF) laser generating output near the 1.91-/spl mu/m region. Using the 1.91-/spl mu/m emission and high brightness achieved with the Tm:YLF laser we resonantly end-pump the Holmium /sup 5/I/sub 7/ manifold in Ho:YAG and demonstrate /spl sim/19 W of continuous-wave (CW) output. The diode-to-Holmium optical to-optical conversion efficiency achieved is /spl sim/18%. Using a CW pumped and repetitively Q-switched configuration, the Tm:YLF pumped Ho:YAG laser achieves >16 W of output power with an M/sup 2//spl sim/1.48 at 15 kHz. A Q-switched frequency range of 9 to >50 kHz is also achieved.     

Er-doped AlGaAs native oxides: photoluminescence characterization and process optimization

We present 300 K photoluminescence (PL) characterization data for wet thermal native oxides of Al/sub 0.58/Ga/sub 0.42/As films grown by metal organic chemical vapor deposition and doped with Er via multiple high-energy ion implants (for 0.0675, 0.135, and 0.27 atomic percent (at.%) peak Er concentrations), and Al/sub 0.5/Ga/sub 0.5/As and Al/sub 0.8/In/sub 0.2/As films doped with Er (0.03-0.26 at.%) during molecular beam epitaxy crystal growth. Broad spectra with a /spl sim/50-nm full-width at half-maximum and a PL peak at 1.534 /spl mu/m are observed, characteristic of Al/sub 2/O/sub 3/:Er films. The dependencies of PL intensity, spectra, and lifetime on annealing temperature (675/spl deg/C-900/spl deg/C), time (2-60 min) and As overpressure (0-0.82 atm) are studied to optimize the annealing process, with As considered as a possible quenching mechanism. Wet and dry-oxidized films are compared to explore the role of hydroxyl (OH) groups identified by Fourier transform infrared (FTIR) spectroscopy. FTIR experiments employing heavy water (D/sub 2/O) suggest that OH groups in wet oxidized AlGaAs come mainly from post-oxidation adsorption of atmospheric moisture. AlGaAs:Er films wet oxidized with 0.1% O/sub 2/ added to the N/sub 2/ carrier gas show a fourfold PL intensity increase, doubled PL lifetime to /spl tau//spl sim/5.0 ms (0.27 at.% implanted sample), and the lowest degree of concentration quenching.     

Comparative study on the spectroscopic properties of Nd:GdVO/sub 4/ and Nd:YVO/sub 4/ with hybrid process

We have proposed a hybrid procedure for determining spectroscopic parameters for uniaxial solid-state laser crystals. Using our procedure, the spectroscopic properties of Nd:GdVO/sub 4/ were evaluated and compared to those of Nd:YVO/sub 4/. As a result, the peaks of absorption and stimulated emission cross sections of Nd:GdVO/sub 4/ in /spl pi/-polarization were determined to be 2.6 and 10.3/spl times/10/sup -19/ cm/sup 2/, respectively, and were smaller than those of Nd:YVO/sub 4/. On the other hand, the fluorescence lifetime of 1 at% Nd:GdVO/sub 4/ was evaluated to be 83.4 /spl mu/s, and was similar to 84.1 /spl mu/s of 1 at% Nd:YVO/sub 4/. Therefore, the product of stimulated emission cross section and fluorescence lifetime (/spl sigma//sub em//spl tau//sub f/ product) of Nd:GdVO/sub 4/ was smaller than that of Nd:YVO/sub 4/ under 1 at% of Nd/sup 3+/ doping concentration. The radiative lifetime of spontaneous emission of Nd:GdVO/sub 4/ was 168 /spl mu/s and was 1.9 times longer than that of Nd:YVO/sub 4/. Because of the low value of radiative quantum efficiency of Nd:GdVO/sub 4/ (50%), careful cavity design is required for creating a well performing solid-state laser with Nd:GdVO/sub 4/, based on the larger /spl sigma//sub em//spl tau//sub f/ product rather than the /spl sigma//sub em//spl tau//sub f/ product of Nd:YAG.     

Determination of piezoelectric and pyroelectric coefficients and thermal diffusivity of 1-3 PZT/epoxy composites

PZT/epoxy composites with 1-3 connectivity were prepared using the dice-and-fill technique. The samples were poled with an electric field of 10 MV/m for 30 minutes at room temperature. The piezoelectric and pyroelectric coefficients for the composites were measured. From the laser interferometric measurements, it was found that the piezoelectric d/sub 33/ coefficients for the composites were independent of the volume fraction and averaged (190 /spl mnplus/ 10) pm/V, which was about half of the measured value of lead zirconate titanate (PZT) ceramic. Measurements of the pyroelectric coefficient showed that the coefficients increased with the ceramic content and reached values as large as 54 /spl mu/C/m/sup 2/ /spl deg/C. The thermal diffusivity of the composites was also determined using a technique based on the measurement of the phase retardation of a thermal wave passing through the material. The average value for the composites was (2.15/spl mnplus/ 0.05) /spl times/ 10/sup -7/ m/sup 2//s.     

High-power continuous-wave intracavity frequency-doubled Nd:GdVO/sub 4/-LBO laser under diode pumping into the emitting level

The continuous-wave high power laser emission of Nd:GdVO/sub 4/ at the fundamental wavelength of 1.06 /spl mu/m and its 531-nm second harmonic obtained by intracavity frequency doubling with an LBO nonlinear crystal is investigated under pumping by diode laser at 808 nm (on the /sup 4/I/sub 9/2//spl rarr//sup 4/F/sub 5/2/ transition) and 879 nm (on the /sup 4/I/sub 9/2//spl rarr//sup 4/F/sub 3/2/ transition). It is shown that, in spite of a lower absorption at 879 nm, the infrared emission is comparable under these two wavelengths of pump. The green emission performances were, however, improved by the 879 nm pump: 5.1 W at 531 nm with M/sup 2/=1.46 and 0.31 overall optical-to-optical efficiency was obtained from a 3-mm-thick 1-at.% Nd:GdVO/sub 4/ laser medium and a 10-mm-long LBO nonlinear crystal in a Z-type cavity for 16.5 W pump power. In similar conditions, the maximum green power for the 808 nm pump was 4.4 W, with 0.26 overall optical-to-optical efficiency and M/sup 2/=3.40 beam quality; at this pump wavelength the green emission shows evident saturation for pump power in excess of 9.9 W. This behavior is connected with the enhanced heat generation under 809-nm pumping, as evidenced by the increased thermal lensing of the fundamental emission. A careful alignment of the laser enables emission almost free of chaotic intensity fluctuations.     

Thermal-stability improvement of a sulfur-passivated InGaP/InGaAs/GaAs HFET

The temperature-dependent characteristics of an InGaP/InGaAs/GaAs heterostructure field-effect transistor (HFET), using the (NH/sub 4/)/sub 2/S/sub x/ solution to form the InGaP surface passivation, are studied and demonstrated. The sulfur-passivated device shows significantly improved dc and RF performances over a wide temperature range (300-510 K). With a 1/spl times/100-/spl mu/m/sup 2/ gate-dimension HFET by (NH/sub 4/)/sub 2/S/sub x/ treatment, the considerably improved thermal stability over dc performances including lower temperature variation coefficients on the turn-on voltage (-1.23 mV/K), the gate-drain breakdown voltage (-0.05 mV/K), the gate leakage current (1.04 /spl mu/A/mm/spl middot/K), the threshold voltage (-1.139 mV/K), and the drain-saturation-current operating regimes (-3.11/spl times/10/sup -4//K) are obtained as the temperature is increased from 300 to 510 K. In addition, for RF characteristics, the sulfur-passivated device also shows a low degradation rate on drain-saturation-current operating regimes (-3.29/spl times/10/sup -4//K) as the temperature is increased from 300 to 400 K. These advantages provide the promise for high-speed high-frequency high-temperature electronics applications.     

Electrical insulation characteristics of cold dielectric high temperature superconducting cable

For the optimization of electrical insulation design for high temperature superconducting (HTS) cable, evaluation of electrical insulation characteristics especially for butt gap of LN/sub 2/ impregnated cold dielectric (CD) which consists of the wrapped tape insulation impregnated with LN/sub 2/ plays an important role. This paper presents partial discharge (PD) inception and breakdown characteristics in LN/sub 2/ impregnated butt gap model which modeled a weak point of the wrapped tape insulation impregnated with LN/sub 2/ and cable model with short length with polypropylene laminated paper (PPLP/sup /spl reg//), Nomex/sup /spl reg// paper and cellulose paper. PD current pulse was found to have a steep rise time of /spl sim/ ns and amplitude of /spl sim/ tens /spl mu/A at PD inception voltage region. Little dependency of breakdown stress on the insulating material is found. PD inception stress is almost independent of insulation thickness of 1 to 3 mm. The requirement insulation thickness for 66 kV class HTS cable is estimated to be /spl sim/ 5 mm under PD-free condition from viewpoint of long-term reliability.     

Near-infrared (NIR) tomography breast image reconstruction with a priori structural information from MRI: algorithm development for reconstructing heterogeneities

A combined magnetic resonance and near-infrared (MRI-NIR) imaging modality can potentially yield high resolution maps of optical properties from noninvasive simultaneous measurement. The main disadvantage of near-infrared (NIR) tomography lies in the low spatial resolution resulting from the highly scattering nature of tissue for these wavelengths. MRI has achieved high resolution, but suffers from low specificity. In this study, NIR image reconstruction algorithms that incorporate a priori structural information provided by MRI are investigated in an attempt to optimize recovery of a simulated optical property distribution. The effect of high levels of tissue heterogeneity are evaluated to determine the limitations of incorporating prior information into a realistic set of patient breast images. We assume absorption coefficient (/spl mu//sub a/) variations near /spl plusmn/40%, and transport scattering coefficient (/spl mu//sub s//sup //) variations near /spl plusmn/20%, in a coronal breast MRI geometry. Changes in tissue pathology due to tumor growth can be observed with NIR tompgraphy, and so the goal here is to determine how best to quantify these tumor-based contrast regions within the presence of high tissue heterogeneity. By applying knowledge of tissue's layered structure in reconstruction through various constraints in the iterative algorithm, quantitative recovery of the tumor optical properties improves from 69% to 74%, and localization improves as well. However, only when the true heterogeneity of the tissue distribution was included was accurate quantification of the tumor region possible. Using a good initial guess of /spl mu//sub a/ and /spl mu//sub s//sup //, derived from the regional structure of the model, quantification of the region reaches 99% of the true value, and spatial resolution retains a similar value to the original MRI image.     

A drain avalanche hot carrier lifetime model for n- and p-channel MOSFETs

A simple and physical drain avalanche hot carrier lifetime model has been proposed. The model is based on a mechanism of interface trap generation caused by recombination of hot electrons and hot holes. The lifetime is modeled as /spl tau/(I/sub d//W)/sup 2//spl prop/(I/sub sub//I/sub d/)/sup -m/. The formula is different from the conventional /spl tau/I/sub d//W-I/sub sub//I/sub d/ model in that the exponent of I/sub d//W is 2, which results from the assumed mechanism of the two-carrier recombination. It is shown that the mechanism gives a physical basis of the empirical /spl tau/-I/sub sub//W model for NMOSFETs. The proposed model has been validated experimentally both for NMOSFETs and for PMOSFETs. Model parameters extracted from experimental data show that carrier critical energies for creating damage are lower than the interface potential barriers. It is supposed that oxide band edge tailing enables low-energy carriers to create the damage. The channel hot electron condition becomes the worst case in short channel NMOSFETs, because gate voltage dependence of the maximum channel electric field decreases.     

Noise figure of parametric wavelength conversion with quasi-phase-matched LiNbO/sub 3/ waveguide

An analytical model of the noise accumulation in a chain of parametric wavelength converters is proposed. Signal-to-noise electrical power ratio is analytically given as a function of node number k in a chained transparent node system that consists of optical amplifiers, parametric wavelength converters, and several loss elements including optical transmission fiber with parameters of pump light excess noise /spl beta//sub p/, and average photon numbers per unit time of pump light and input signal , and , respectively, and spontaneous emission factor of optical amplifier n/sub sp/. The signal-to-noise degrades inversely proportional to node number k with the coefficient defined by NF/sup (1)/=2n/sub sp/+/spl beta//sub p// when k is lower than /Bo, where B/sub o/ represents optical bandwidth. The noise figure dependence on pump light quality /spl beta//sub p// and average photon number of input light in a single stage configuration are experimentally evaluated using Er-doped fiber amplifiers and quasi-phase-matched lithium niobate waveguide parametric wavelength conversion.     

Sol-gel derived la modified PZT thin films: structure and properties

Lanthanum modified PZT thin films with compositions, namely 8/60/40, 8/70/30, 10/70/30 and 12/70/30 were deposited on platinized silicon substrates by sol-gel spin coating technique. Characterization of these films by XRD and SEM show that the films possess perovskite phase with submicron crystallite size. The saturation polarization (Ps), remnant polarization (PR) and coercive field (Ec) of polarization-electric field hysteresis loop are presented for all compositions. The 8/60/40 composition shows hysteresis loop with P/sub R/ = 11 /spl mu/C/cm/sup 2/. The temperature dependence of dielectric constant and dielectric loss of these films are also studied. Leakage current densities for these thin films are found to be in the range of 10/sup -/-10/sup -/ A/cm/sup 2/. To show the possible application of these thin films for micro electromechanical system (MEMS), a device incorporating an 8/60/40 PLZT thin film has been fabricated using silicon micromachining technology. This device functions satisfactorily as a vibration sensor with a resonance frequency of approximately 8.45 MHz.     

Analysis of the electric field and force in an arrangement of a conducting sphere and a plane electrode with a dielectric barrier

This paper presents an analysis of the electric field and dielectrophoretic force in an arrangement consisting of an uncharged conducting sphere and a plane electrode with a dielectric barrier. The electric field is calculated by using the method of multipole images using an iterative algorithm proposed for calculating the images of the dielectric barrier of finite thickness. The calculation results show electric field intensification due to the presence of the dielectric barrier having higher permittivity, /spl epsiv//sub S/, than that of the surrounding medium, /spl epsiv//sub E/; however, if the barrier is separated from the conducting sphere by at least the sphere radius, its influence is negligible. Inside the dielectric barrier, the electric field on the axis of symmetry becomes more uniform and the average field significantly increases with decreasing its thickness. For a case where dielectric barrier is sufficiently thin, the electric field at the contact point and the force on the conducting sphere vary approximately as power functions of /spl epsiv//sub S///spl epsiv//sub E/.     

Intentionally inserted oxygen depleted (Ba/sub 0.5/Sr/sub 0.5/)TiO/sub 3/ layers as a model of DC-electrical degradation

The relative dielectric constant versus voltage (/spl epsiv//sub r/-V) characteristics and the current density versus electric field (J-E) characteristics of (Ba/sub 0.5/Sr/sub 0.5/)TiO/sub 3/ films, which have intentionally inserted oxygen depleted layers near the bottom electrodes, were investigated as a model of dc-electrical degradation phenomena. Our investigation demonstrated that the intentionally inserted oxygen depleted layer is the cause of the tunneling conduction.     

Electron injection in "electron-only" devices based on a symmetric metal/silole/metal structure

We report on electron injection from two different metal electrodes into three silole derivatives, namely 2,5-di-(3-biphenyl)-1,1-dimethyl-3,4-diphenylsilacyclopentadiene (PPSPP), 1,2-bis(1-methyl-2,3,4,5,-tetraphenylsilacyclopentadienyl) ethane (2PSP) and 2,5-bis-(2', 2'-bipyridin-6-yl)-1, 1-dimethyl-3,4-diphenylsilacyclopentadiene (PyPySPyPy), previously employed as emissive and electron transport materials in molecular organic light-emitting diodes (MOLEDs). Silole films were sandwiched between symmetric Mg:Ag or bilayer CsF-Al electrodes. The steady-state current density-voltage characteristics were measured as a function of the silole layer thickness for the two cathodes. The trap-free space-charge-limited current based on time-of-flight measurements compared with the injected electron current for PyPySPyPy indicated that Mg:Ag contacts limit the injected current, while CsF-Al contacts behave as quasi-ohmic contacts. Similar findings were obtained for 2PSP and PPSPP allowing steady-state derived electron mobility parameters to be extracted. Based on space-charge-limited conduction analysis of the measured current-voltage characteristics, PyPySPyPy is found to be a superior electron transporting silole with approximately an order of magnitude higher electron mobility (2.0/spl times/10/sup -4/ cm/sup 2//Vs) compared with those of 2PSP (2.4/spl times/10/sup -5/ cm/sup 2//Vs) and PPSPP (5.2/spl times/10/sup -5/ cm/sup 2//Vs), which is significantly higher than that of the prototype electron transport material tris (8-hydroxyquinolinolato) aluminum (III) (Alq/sub 3/) (6.5/spl times/10/sup -7/ cm/sup 2//Vs) at 0.6 MV/cm.     

Atmospheric pressure of nitrogen plasmas in a ferroelectric packed-bed barrier discharge reactor. Part II. Spectroscopic measurements of excited nitrogen molecule density and its vibrational temperature

For pt.I see ibid.(vol.11 no.3 p.481-90, 2004). In order to validate a nonthermal plasma model using nitrogen in a ferroelectric packed-bed reactor, the number density of the excited nitrogen molecules has been investigated by spectroscopic measurements. Experiments were conducted at applied voltages from 0 to 20 kV, 60 Hz and gas flow rates from 1 to 5 L/min in pure nitrogen gas. The results show that the number density for excited N/sub 2/ molecules increases with increasing applied voltage and dielectric constant and agrees qualitatively with the numerical modeling results at lower applied voltage. The vibrational temperature of the C/sup 3//spl Pi//sub u/ (v') state of N/sub 2/ has been calculated from the light intensity emitted by the 2nd positive band. The vibrational temperature decreases with increasing gas flow rate and no significant effects of the applied voltage and dielectric constant were observed.