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1.
HfO2 films at various O2/Ar flow ratios were prepared by reactive dc magnetron sputtering. The effects of O2/Ar ratio on the structure and properties of HfO2 films were studied using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and UV-Visible spectroscopy. The results showed that the HfO2 films were amorphous at different O2/Ar ratios, and the atomic ratio of O/Hf in the HfO2 films at high O2/Ar ratio was nearly to 2:1. The peaks of Hf4f and O1s shifted to higher binding energy with increasing the oxygen flow proportion. The HfO2 films at high O2/Ar ratio had high transmissivity at the range of 400-1100 nm. 相似文献
2.
Preparation of TiO2 and SiO2 films for optical applications was attempted using conventional rf magnetron sputtering in the sputtering ambient with various O2/Ar+O2 ratios and at substrate temperatures between room temperature and 400 °C. X-ray photoelectron spectroscopy (XPS) and optical spectroscopy investigations indicated that oxygen addition in the sputtering ambient was essential for growing TiO2 films with stoichiometric compositions and good transmittance, while SiO2 films had a stoichiometric composition of O/Si ratio=2.1-2.2 and were highly transparent in the visible wavelength region, independent of gas composition in the growing ambient. It was also identified from scanning electron microscope (SEM), atomic force microscope (AFM) and Fourier transform infrared spectroscopy (FTIR) measurements that the structural characteristics of both TiO2 and SiO2 films were significantly improved with O2 addition in the sputtering ambient, showing smoother surface morphologies and higher resistances to water absorption when compared with films grown without O2 addition. Heating of the substrate between 200 and 400 °C considerably increased the refractive index of TiO2 layers, resulting in dense structures along with an improvement of crystallinity. For optical applications, AR coatings composed of 2-4 multi-layers on glass were designed and manufactured by stacking in turn the SiO2 and TiO2 films at room temperature and O2/Ar+O2=10%, and the performance of the produced coatings was compared with simulation results. 相似文献
3.
Wen Du Yinping YeHongxuan Li Fei Zhao Li JiWeilong Quan Jianmin Chen Huidi Zhou 《Vacuum》2012,86(9):1387-1392
A serial of crystalline titanium oxide ceramic films were deposited at low temperature using microwave electron cyclotron resonance (MW-ECR) magnetron sputtering with different O2/Ar ratios. The influences of O2/Ar ratio on the deposition rate, morphology, crystalline nature, optical adsorption property of the obtained titanium oxide thin films were investigated by means of X-ray diffraction (XRD), atomic force microscopy (AFM) and UV-Vis spectra. Therefore, the optimum O2/Ar ratio for deposition of anatase TiO2 thin films on unheated glass substrate was realized in a MW-ECR magnetron sputtering process. The as-deposited anatase TiO2 films were transparent and were antireflective in the visible region. 相似文献
4.
The surface of a float glass was examined to investigate the effect of SO2 treatment, which relates with the optical property, by using a precise X-ray photoelectron spectroscopy (XPS) depth profile. For XPS depth profiling, Ar ion sputtering has been one of the most accepted techniques, while this technique has been known to be inadequate for quantitative analysis of glass including mobile ions such as soda–lime–silica glass. Recently we have reported that buckminsterfullerene (C60) ion sputtering allows us to obtain the precise depth profile with the suppression of the migration of mobile ions. In this paper, the newly developed XPS depth profiling technique is applied to soda–lime–silica float glass (70.4SiO2, 0.9Al2O3, 7.3MgO, 7.8CaO, 13.6Na2O in mol%). The precise analysis revealed that the eliminated layer of sodium ion affected the optical property of the float glass. 相似文献
5.
Fe-O thin films with different atomic ratio of iron to oxygen were deposited on glass and thermally oxidized silicon substrates at temperatures of 300, 473 and 593 K, by reactive magnetron sputtering in Ar+O2 atmosphere. The composition and structure of the thin films were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS) and electrical resistivity. It was found from XRD that with increasing the oxygen partial pressure in the working gas, the crystalline structure of the Fe-O films deposited at the substrate temperature of 473 K gradually changed from α-Fe, amorphous Fe-O, Fe3O4, γ-Fe2O3 to Fe21.34O32. The structure and chemical valence of the Fe3O4 films were analyzed by electron microscopy and XPS, respectively. 相似文献
6.
Use of germanium as a storage medium combined with a high-k dielectric tunneling oxide is of interest for non-volatile memory applications. The device structure consists of a thin HfO2 tunneling oxide with a Ge layer either in the form of continuous layer or discrete nanocrystals and relatively thicker SiO2 layer functioning as a control oxide. In this work, we studied interface properties and formation kinetics in SiO2/Ge/HfO2(Ge) multilayer structure during deposition and annealing. This material structure was fabricated by magnetron sputtering and studied by depth profiling with XPS and by Raman spectroscopy. It was observed that Ge atoms penetrate into HfO2 layer during the deposition and segregate out with annealing. This is related to the low solubility of Ge in HfO2 which is observed in other oxides as well. Therefore, Ge out diffusion might be an advantage in forming well controlled floating gate on top of HfO2. In addition we observed the Ge oxidation at the interfaces, where HfSiOx formation is also detected. 相似文献
7.
Feng Shi 《Journal of Materials Science: Materials in Electronics》2011,22(9):1290-1296
Radio frequency (RF) magnetron sputtering method was applied to prepare dielectric ceramic thin films on SiO2 (110) substrates using (Ba0.3Sr0.7)(Zn1/3Nb2/3)O3 microwave dielectric ceramics as target. The samples were deposited at different sputtering powers in Ar atmosphere. In particular,
the microstructure and morphology of the thin films were investigated as a function of sputtering powers by X-ray diffraction
(XRD), X-ray photoelectron spectroscope (XPS), scanning electron microscopy (SEM), atomic force microscopy (AFM) and transmission
electron microscopy (TEM). The results show that the thin films are polycrystalline and the sputtering power significantly
influences the surface morphology and microstructure of the thin films. On increasing the sputtering power, the crystallinity
improves and the grain size and roughness of the thin films reach maximum values at 200 W. 相似文献
8.
High-k gate dielectric HfO2 thin films have been deposited on Si and quartz substrate by radio frequency magnetron sputtering. The structural and optical properties of HfO2 thin films related to deposition power are investigated by X-ray diffraction (XRD), fourier transform infrared spectroscopy (FTIR), atomic force microscopy (AFM), ultraviolet–visible spectroscopy (UV–Vis), and spectroscopic ellipsometry (SE). Results confirmed by XRD have shown that the as-deposited HfO2 thin films are not amorphous state but in monoclinic phase, regardless of deposition power. Analysis from FTIR indicates that an interfacial layer has been formed between the Si substrate and the HfO2 thin film during deposition. AFM measurements illustrate that the root mean square (RMS) of the as-deposited HfO2 thin films’ surface demonstrates an apparent reduction with the increase of deposition. Combined with UV–Vis and SE measurements, it can be noted reduction in band gap with an increase in power has been observed. Additionally, increase in refractive index (n) has been confirmed by SE. 相似文献
9.
Keewah Chan Boon Tong GohSaadah Abdul Rahman Muhamad Rasat MuhamadChang Fu Dee Zarina Aspanut 《Vacuum》2012,86(9):1367-1372
Au/SiOx nanocomposite films have been fabricated by co-sputtering Au wires and SiO2 target using an RF magnetron co-sputtering system before the thermal annealing process at different temperatures. The structural and optical properties of the samples were characterized using X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FESEM), Fourier transform infrared spectroscopy (FTIR), optical transmission, and reflection spectroscopy. XPS analysis confirms that the as-prepared SiOx films are silicon-rich suboxide films. FESEM images reveal that with an increase in annealing temperature, the embedded Au NPs tend to diffuse toward the surface of the SiOx films. In IR spectra, the intensity of the Si-O-Si absorption band increases with the annealing temperature. Optical spectra reveal that the position and intensity of the surface plasmon resonance (SPR) peak are dominated by the effect of the inter-particle distance and size of the Au NPs embedded in the SiOx films, respectively. The SPR absorption peak shows the blue-shift from 672 to 600 nm with an increase in annealing temperature. The growth of silica nanowires (SiOx NWs) is observed in the film prepared on a c-Si substrate instead of a quartz substrate and annealed at temperatures of 1000 °C. 相似文献
10.
Jaroslaw Domaradzki Danuta Kaczmarek Dieter Schmeisser Radoslaw Wasielewski Damian Wojcieszak 《Vacuum》2008,82(10):1007-1012
This work presents the influence of annealing on the structure and stoichiometry of europium (Eu)-doped titanium dioxide (TiO2). Thin films were fabricated by magnetron sputtering from a metallic Ti-Eu target in oxygen atmosphere and deposited on silicon and SiO2 substrates. After deposition the selected samples were additionally annealed in air up to 1070 K.Film properties were examined by means of X-ray diffraction (XRD), atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS) and the results were analyzed together with the undoped TiO2 thin films prepared under similar technological conditions.XRD results showed that depending on the Eu content, as-deposited thin films consisted of the TiO2-anatase or TiO2-rutile.An additional annealing will result in the growth of anatase crystals up to 35 nm, but anatase to rutile phase transformation has not been recorded. AFM images display high quality and a dense nanocrystalline structure. From the XPS Ti2p spectra the 4+oxidation state of Ti was confirmed. The O1s XPS spectra displayed the presence of an O2− photoelectron peak accompanied by an additional broader peak that originates from hydroxyl species chemisorbed at the sample surface. It has been found that Eu dopant increases the OH− content on the surface of prepared TiO2:Eu thin films. The calculated O/Ti ratio was in the range of 1.85-2.04 depending on the sample. 相似文献
11.
G. Domínguez-Cañizares A. Gutiérrez J. Chaboy D. Díaz-Fernández G. R. Castro L. Soriano 《Journal of Materials Science》2014,49(7):2773-2780
Nanocrystalline NiO thin films have been grown on different substrates by RF magnetron sputtering with mixed O2?Ar plasma composition. The oxygen content of the plasma was varied between 0 and 100 %. The films were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and extended X-ray absorption fine structure (EXAFS). SEM results reveal a grain refinement when oxygen is added to the plasma. This effect can also be observed by XRD, where an analysis of the peak width confirms this decrease in the grain size. The analysis of EXAFS data shows that the presence of O2 in the plasma induces lattice disorder, as evidenced by the observed increase of the Debye–Waller factor. These microstructural changes modify the electronic structure of the NiO thin films. The spectral line shape in Ni 2p XPS spectra shows clear differences between samples grown with and without O2 in the plasma. These differences can be explained in terms of the observed structural changes. 相似文献
12.
Kou-Chen Liu Jung-Ruey Tsai Wen-Kai LinChi-Shiau Li Jyun-Ning Chen 《Thin solid films》2011,519(15):5110-5113
Oxygen plasma treatment process was used to passivate the non-stoichiometric HfO2 films deposited by magnetron sputtering. After optimal oxygen plasma treatment, the gate leakage of HfO2 films would be reduced and dielectric breakdown voltage would be improved to 30 percentage. XPS spectrum was used to analysis the non-stoichiometric HfO2 films after oxygen plasma treatment which demonstrate a higher concentration of incorporated oxygen atoms at the surface in comparison to the bulk HfO2. This simple method can maintain high-k dielectric deposition process at room temperature by sputtering. It would be useful for fabrication thin film transistor on polymer based substrate in the future. 相似文献
13.
Guang-Rui Gu Ying-Ai LiYan-Chun Tao Zhi HeJun-Jie Li Hong YinWei-Qin Li Yong-Nian Zhao 《Vacuum》2003,71(4):487-490
Titanium dioxide (TiO2) films have been successfully deposited on metal alloy substrates by radio-frequency magnetron reactive sputtering in an Ar+O2 gas mixture. The effects of gas total pressure on the structure and phase transition of TiO2 films were studied by X-ray diffraction and Raman spectra. It is suggested that the film structure changes from rutile to anatase while work gas total pressure changes from 0.2 to 2 Pa. The structure of TiO2 films is not affected by the film thickness. 相似文献
14.
We propose a new high-rate reactive sputter-deposition method with two sputtering sources for fabricating TiO2 films. One source operates in a metal mode sputtering condition and supplies titanium atoms to the substrate. The other source operates in oxide mode and works as an oxygen radical source for supplying oxygen radicals to the substrate surface for promoting oxidization of titanium atoms. Each sputtering source is separated with a mesh grid from the deposition chamber, and Ar and oxygen gas are introduced separately through the titanium supply and oxygen radical sources, respectively. By using this reactive sputtering system, a deposition rate above 80 nm/min can be obtained for the deposition of TiO2 films with rutile structure. 相似文献
15.
Mu-Hsuan Chan 《Thin solid films》2009,517(17):5006-8761
X-ray photoelectron spectroscopy (XPS) has been employed to investigate titanium oxynitride (TiNxOy) films prepared by d.c. magnetron sputtering using air/Ar mixtures, which allows one to perform the deposition at a high base pressure (1.3 × 10− 2 Pa) and can reduce substantially the processing time. XPS analyses revealed that all the prepared TiNxOy films comprised Ti-N, Ti-N-O, and Ti-O chemical states. When the air/Ar ratio was below 0.3, nitrogen-rich TiNxOy films were obtained. As the air/Ar ratio was above 0.4, oxygen-rich TiNxOy films were formed. XPS depth profile analyses were also performed in selected specimens. It has been found that at relatively low air/Ar ratios, such as 0.5, the oxygen content of the films increased toward the film/substrate interface and when the air/Ar ratio was higher, TiNxOy films with large oxygen content with uniform concentrations were then formed. 相似文献
16.
Jiaqi Zhu Yuankun ZhuWeixia Shen Yongjie WangJiecai Han Gui TianPei Lei Bing Dai 《Thin solid films》2011,519(15):4894-4898
Yttrium oxide (Y2O3) is a promising ceramic material for electronic and optical applications due to its excellent properties. The purpose of this study is to characterize the effects of deposition parameters on the structure and composition of Y2O3 films. The films are grown on Si substrates by reactive magnetron sputtering at different substrate temperatures and oxygen pressures. The composition and structure of the films are studied by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and Raman spectroscopy. It is shown that the Y2O3 films deposited by reactive magnetron sputtering are mainly cubic phase and polycrystalline. The films are composed of Y-O, Y-O-Si, and Si-O bonds. Increasing substrate temperature induces the monoclinic to cubic phase transition and results in the formation of oxygen vacancies in the film. The preferred growth orientation of Y2O3 film is the (110) plane at low temperature, and it changes to the (111) plane at high temperature. The low temperature is preferable for the formation of Y-O bonds. The oxygen pressure influences on the concentration of Y-O bonds significantly. An optimal oxygen partial pressure for the formation of Y-O bonds exists during the film deposition. In addition, the deposited Y2O3 films exhibit excellent mechanical properties. 相似文献
17.
Z.W. Ma L.X. LiuY.Z. Xie Y.R. SuH.T. Zhao B.Y. WangX.Z. Cao X.B. QinJ. Li Y.H. YangE.Q. Xie 《Thin solid films》2011,519(19):6349-6353
Hafnium oxide (HfO2) films were prepared using a pulsed sputtering method and different O2/(O2 + Ar) ratios, deposition pressures, and sputtering powers. Spectroscopic ellipsometry (SE) and positron annihilation spectroscopy (PAS) were used to investigate the influence of the deposition parameters on the number of open volume defects (OVDs) in the HfO2 films. The results reveal that a low O2/(O2 + Ar) ratio is critical for obtaining films with a dense structure and low OVDs. The film density increased and OVDs decreased when the deposition pressure was increased. The film deposited at high sputtering power showed a denser structure and lower OVDs. Our results suggest that SE and PAS are effective techniques for studying the optical properties of and defects in HfO2 and provide an insight into the fabrication of high-quality HfO2 thin films for optical applications. 相似文献
18.
Amorphous hydrogenated germanium-carbon (a-Ge1−xCx:H) films were deposited by RF reactive sputtering pure Ge (1 1 1) target at different flow rate ratios of CH4/(CH4+Ar) in a discharge Ar/CH4, and their composition and chemical bonding were investigated using X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and Fourier transform infrared spectroscopy (FTIR). XPS and FTIR results showed the content of germanium in the films decreased with the increase of the flow rate ratio CH4/(Ar+CH4), and the Ge-C, Ge-H, C-H bonds were formed in the films. The fraction of Ge-C, Ge-H, and C-H bonds was strongly dependent on the flow rate ratio. Raman results indicated that the films also contain both Ge-Ge and C-C bonding. Based on the change of the chemical bonding of a-Ge1−xCx:H films with the flow rate ratio CH4/(CH4+Ar), an optimal experimental condition for the application of infrared windows was obtained. 相似文献
19.
Very thin HfO2 films were deposited directly on Si substrates by the pulsed laser deposition technique in a wide range of substrate temperatures and oxygen pressures to investigate the kinetics of the interfacial layer formation. Angle-resolved X-ray photoelectron spectroscopy (XPS) investigations showed that the interfacial layer formed between the Si substrate and the deposited oxide contains a mixture of HfO2 and SiO2 without any strong evidence to support the formation of a silicate-type compound. X-Ray reflectivity measurements showed that the mass density of the interfacial layer is higher than that of pure SiO2, while spectroscopic ellipsometry measurements showed that the refractive index is higher than that of pure SiO2, therefore corroborating the XPS results. 相似文献
20.
Jong-Chang WooChang-Il Kim 《Vacuum》2011,86(1):1-6
In this research, we investigated the TaN etch rate and selectivity with under layer (HfO2) and mask material (SiO2) in inductively coupled CH4/Ar plasma. As the CH4 content increased from 0% to 80% in CH4/Ar plasma, the TaN etch rate was increased from 11.9 to 22.8 nm/min. From optical emission spectroscopy (OES), the intensities for CH [431 nm] and H [434 nm] were increased with the increasing CH4 content from 0% to 100% in CH4/Ar plasma. The results of x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) showed no accumulation of etch by-products from the etched surface of TaN thin film. As a result of OES, AES and XPS analysis, we observed the etch by-products from the surfaces, such as Ta-N-CH and N-CH bonds. Based on the experimental results, the TaN etch was dominated by the chemical etching with the assistance of Ar sputtering in reactive ion etching mechanism. 相似文献