Study on laser and hot air reflow soldering of PBGA solder ball

Laser and hot air reflow soldering of PBGA solder ball was investigated.experimental results showed that surface quality and shear strength of solder bump reflowed by laser was superior than the solder bump by hot air ,and the microstructure within the solder bump reflowed by laser was much finer.Analysis on interfacial reaction showed that eutectic solder reacted with Au/Ni/Cu pad shortly after the solder was melted.Interface of solder bump reflowed by laser consists of a continuous AuSn4 layer and remnant Au element.Needle-like AuSn4 grew sidewise from interface,and then spread out to the entire interface region.A thin layer of Ni3Sn4 intermetallic compound was found at the interface of solder bump reflowed by hot air,and AuSn4 particles distribute within the whole solder bump randomly.The combination effect of the continuous AuSn4 layer and finer eutectic microstructure contributes to the higher shear strength of solder bump reflowed by laser.     

Effect of Zn addition in Sn-rich alloys on interfacial reaction with Au foils

To restrain the formation of AuSnx intermetallic components （IMCs） in solder joints, Zn was added into Sn-rich solders. The solder joints were fabricated by a laser reflow soldering method, and then they were aged at 125 ℃. The results show that the total thickness of AuSnx IMCs at the interface of pure Sn solder and Au foils reaches about 54 μm under the condition of 600 h aging. In Sn-1.5Zn solder joints, however, formation of AuSn4 IMCs is restrained greatly. As the content of Zn in the solder is increased to 3.5%（mass fraction）, no AuSn4 IMC is observed at the interface. Au-Zn phases form beside AuSn2 and AuSn IMCs layers. As for Sn-9.0Zn solder joints, Au-Zn and Au-Zn-Sn phases and few AuSnx IMCs form at the interface. Moreover, total thickness of the phases and IMCs is far less than that ofAuSnx IMCs in the pure Sn solder joints.     

EFFECT OF LASER INPUT ENERGY ON AuSnx INTERMETALLIC COMPOUNDS FORMATION IN SOLDER JOINTS WITH DIFFERENT THICKNESS OF Au SURFACE FINISH ON PADS

Formation of AuSnx intermetallic compounds （IMCs） in laser reflowed solder joints was investigated. The results showed that few IMCs formed at the solder/0. 1μm Au interface. Needlelike AuSn4 IMCs were observed at the solder/0.5μm Au interface. In Sn-2.0Ag-O,75Cu-3,0Bi and Sn-3.5Ag-O.75Cu solder joints, when the laser input energy was increased, AuSn4 IMCs changed .from a layer to needlelike or dendritic distribution at the solder/0.9μm Au interface. As for the solder joints with 4.0 μm thickness of Au surface finish on pads, AuSn4 , AuSnx, AuSn IMCs, and Au2Sn phases formed at the interface. Moreover, the content of AuSnx IMCs, such as, AuSn4 and AuSn2, which contained high Sn concentration, would become larger as the laser input energy increased. In the Sn-37Pb solder joints with 0.9 μm or 4.0 μm thickness of the Au surface finish on pads, AuSn4 IMCs were in netlike distribution. The interspaces between them were filled with Pb-rich phases.     

Influence of interfacial reaction between molten SnAgCu solder droplet and Au/Ni/Cu pad on IMC evolution

Intermetallic compounds（IMC） formed at Sn-Ag-Cu solder droplet/pad interface during wetting reaction were investigated. Comparative studies of the IMC evolution during reflow and aging were also conducted. The results show that the wetting reaction between molten solder droplet and pad leads to the formation of Au-Sn compound at interface, but Au element is not fully consumed during wetting reaction. After reflow, all Au layer disappears from the interface, Au element is dissolved into solder and Au-Sn intermetallic compounds are precipitated in the bulk. Reaction between Ni layer and Sn-Ag-Cu solder leads to the formation of （CuxNi1-x）6Sn5 layer at interface during reflow. According to the thermodynamic-kinetic of interfacial reaction, the wetting reaction at solder droplet/pad interface influences the phase selectivity of IMC evolution during reflow and aging process.     

Microstructural evolution of Au-Sn solder prepared by laminate rolling during annealing process

The microstructural evolution and interfacial reaction of the Au/Sn/Au/Sn/Au/Sn/Au couples were investigated during annealing at 453,523,and 543 K for up to 240 h.The Au/Sn combination formed a rapid diffusion system.Even in rolled Au-Sn solder,three phases,such as AuSn,AuSn2,and AuSn4,were formed.After initial annealing at 453 K,the diffusion layers of AuSn,AuSn2,and AuSn4,which were formed after rolling,expanded gradually and then fully transformed into ζ phase(containing Sn from 10% to 18.5%,mole fraction) and δ(AuSn) phase.As a whole,the microstructure of the couple was stable during annealing at 453 K.The solid-state interfacial reaction was much faster at 523 K than at 453 K.After annealing at 523 K for 6 h,the AuSn,AuSn2,and AuSn4 were fully transformed into the ζ phase and δ phase(AuSn) .In spite of the prolonged annealing time for up to 240 h,no significant change of the interfacial microstructure occurred,and the microstructure of the couple was stable during annealing at 523 K.When annealing at 543 K,however,the interfacial of Au/Sn was transformed into solid-liquid state,and the whole couple formed a eutectic structure rapidly,causing the solder to be brittle.The study results clearly demonstrate that the service temperature of the Au-Sn solder should be lower than 543 K.     

EVOLUTION OF MICROSTRUCTURE OF Sn-Ag-Cu LEAD-FREE FLIP CHIP SOLDER JOINTS DURING AGING PROCESS

Flip chip bonding has become a primary technology that has found application in the chip interconnection process in the electronic manufacturing industry in recent years. The solder joints of the flip chip bonding are small and consist of complicated microstructures such as Sn solution, eutectic mixture, and intermetallic compounds （IMCs）, whose mechanical performance is quite different from the original solder bulk. The evolution of microstructure of the flip chip solder joints under thermal aging was analyzed. The results show that with an increase in aging time, coarsening of solder bulk matrix and AuSn4 IMCs occurred within the solder. The IMCs that are formed at the bottom side of the flip chip bond were different from those on the top side during the aging process. （Cu, Ni, Au）0Sn5 were formed at the interfaces of both sides, and large complicated （Au,Ni, Cu）Sn4 IMCs appeared for some time near the bottom interface after aging, but they disappeared again and thus （Cu,Ni, Au ）0Sn5 IMC thickness increased considerably. The influence of reflow times during the flip chip bonding （as-bonded condition） on the characteristics of interfacial IMCs was weakened when subjected to the aging process.     

Rapid Ultrasonic-Assisted Soldering of AZ31B Mg Alloy/6061 Al Alloy with Low-Melting-Point Sn–xZn Solders Without Flux in Air

A novel ultrasonic-assisted low-temperature soldering was developed to join AZ31B Mg alloy and 6061 Al alloy with a series of Sn–x Zn solders. The average maximum shear strength of the joints reaches up to 87.5 MPa at soldering temperature of 300 °C under ultrasonic assistance for only 5 s using Sn–20 Zn solder. The fracture path propagates completely in the soldering seam. The results indicate that the microjet generated by ultrasonic pressure in liquid solder could strike and splinter the Mg_2Sn intermetallic compounds into small pieces, which contributes to the enhancement of the joint strength. In addition, the primary Al(Zn) solid solution phase formed during cooling stage could also strengthen the joint due to the prevention of microcracks propagation.     

Optimal Design of Co/In/Cu Sputtering Target Assembly Using Finite Element Method and Taguchi Method

Target assembly is a key consumable material for producing thin fi lm used in the electronic packaging and devices. The residual stresses induced during the process of soldering are detrimental to the performance of target assembly. In this work, the intensity and distribution of the soldering residual stress of Co/In/Cu target assembly subjected to a 20 W/(m~2 K) cooling condition corresponding to the actual air cooling process were studied, based on fi nite element simulation and Taguchi method, to optimize the sputtering target assembly. Effects of different control factors, including solder material, thickness of solder layer, target and backing plate, on the soldering residual stress of target assembly are investigated. The maximum residual stress is calculated as 9.28 MPa in the target located at 0.16 mm from target–solder layer interface and at a distance of 0.78 mm from symmetry axis. The optimal design in target assembly has the combination of indium solder material, cobalt target at 12 mm thick, solder layer at 0.8 mm thick, copper backing plate at 15 mm thick. Moreover, solder material is the most important factor among control factors in the target assembly.     

Bonding mechanisms of SiO2 glass and 1060 Al by ultrasonic assisted active metal soldering process

In this work,the ultrasonic assisted active metal soldering of SiO₂ glass and Al was successfully achieved using Sn-2Ti solder filler at a low soldering temperature of 250℃ in ambient atmosphere.A nano-crystalline α-Al₂O₃ layer with the average thickness of 13.9 nm and a nano-crystalline R-TiO₂ layer with the average thickness of 16.2 nm are formed at the interface of Al/Sn and SiO₂/Sn respectively because Al elements did not diffuse from Al...     

Comparative Study on Solid-State and Metastable Liquid-State Aging for SAC305/Cu Joints

In order to study the in?uence of the physical state of solder on the interfacial reaction of dip-soldered Sn-3.0 Ag-0.5 Cu/Cu system, two kinds of experiments were designed, including:(1) solid-state aging between the solder and Cu substrate;(2)liquid-state aging between the metastable supercooled liquid-state solder and Cu substrate. The aging times were 30, 60,120 and 180 min, respectively, and the aging temperature was 8 ℃ lower than the melting point of the Sn-3.0 Ag-0.5 Cu(SAC305) alloy(217 ℃). The experimental data revealed that the physical state of the solder obviously affected the formation of the intermetallic compound(IMC), and resulted in the difference in the diffusion of atoms on the interface between the SAC305 solder and Cu substrate. The IMC interface after aging for 30 min presents unique characteristics compared with that of the sample after dip soldering. The IMC interface of solid-state aged SAC305/Cu couple is relatively planar, while the IMC interface under metastable supercooled liquid-state aging conditions presents scallop-like shape.     

钎料熔滴与焊盘界面反应及再重熔时的界面组织演变

采用熔滴直接凸点制作方法,对共晶SnPb及SnAgCu钎料熔滴与Au/Ni/Cu焊盘所形成的凸点/焊盘界面组织进行了研究,并与激光重熔条件下获得的凸点/焊盘界面组织进行了比较,考察了凸点/焊盘界面组织在随后的再重熔过程中的演变.结果表明:钎料熔滴与焊盘在接触过程中形成了Au-Sn化合物,Au层并未完全反应.在随后的再重熔过程中,Au层被完全消耗,全部溶入钎料基体中,Ni层与钎料发生反应.无铅钎料(SnAgCu)和SnPb钎料所形成的界面组织明显不同;再重熔后SnPb钎料/焊盘的界面组织为Ni3Sn1,SnAgCu钎料/焊盘界面组织为(CuxNi1-x)6Sn5.     

激光重熔PBGA钎料球与Au/Ni/Cu焊盘的界面反应

研究了塑料球栅阵列（PBGA）钎料球重熔过程中钎料与Au/Ni/Cu焊接之间的界面反应，结果表明：界面处金属间化合物的生成与激光输入量能密切相关，当激光输入能量较小时，焊盘上的Au没有完全溶解到钎料中，界面处存在一层连续的AuSn2和一些垂直或斜向生长到钎料中的针状AuSn4化合物，增大激光输入能量，Au完全溶解到钎料中，界而处连续的AuSn2化合物层全部转化为针状AuSn4相，有部分AuSn4针从界面处折断并落入钎料中，当激光功率为18W，激光加热时间为400ms时，AuSn4相在界面处消失，以细小颗粒弥散分布在钎料内部。     

激光与红外重熔对63Sn37Pb/焊盘界面微观组织的影响

研究了塑料球栅阵列 (PBGA)钎料球激光重熔以及红外二次重熔过程中 6 3Sn37Pb共晶钎料与Au/Ni/Cu焊盘之间界面反应。结果表明 :钎料凸点 /焊盘界面处金属间化合物的形貌和数量与激光输入能量密切相关。随着激光输入能量的增大 ,Au完全溶解到钎料中 ,界面处连续分布的Au Sn化合物层全部转变为针状AuSn4 相 ,部分针状AuSn4 从界面处折断并落入钎料中 ,最后变为细小的颗粒状弥散分布在钎料内部。红外二次重熔后焊点界面处的针状AuSn4 溶解到钎料中 ,钎料组织由原来的粒状结晶结构变为层片状结晶结构 ,焊点界面处出现了不同形态的粗大富Pb相     

细间距器件无铅焊点力学性能和断口形貌分析

分别采取红外再流焊和激光再流焊焊接细间距器件,研究了SnPb,SnAgCu和SnAg三种钎料在不同焊接热源下焊点的力学性能。结果表明,激光再流焊对应焊点的力学性能优于红外再流焊,该现象在使用SnAg钎料的情况下尤为显著,同时无铅焊点优于传统的SnPb焊点。对焊点断口形貌进行研究,发现激光焊接的条件下,焊点断口韧窝较多、较深,断口的撕裂棱朝固定的方向延伸,而红外热源焊接的条件下,断口韧窝较少,较浅,两种情况下焊点韧窝开裂均为穿晶开裂。     

钎料球激光重熔温度场数值模拟

对PBGA封装制造时钎料球的激光重熔过程中的温度场分布进行了数值模拟，考察了多点和扫描两种激光加热方式对温度场的影响，计算结果表明，与红外、热风等传统重熔方法相比，激光重溶具有加热时间短、封装内部温升低的特点，不会对内部芯片及连接造成损害，同时，本文还对PBGA钎料球激光重熔进行了试验研究。试验结果表明，在合适的规范下，重熔后形成的钎料凸点表面质量也优于前者。     

磁控溅射Cu-Cr合金薄膜与Sn-Ag-Cu焊料在时效处理时的界面反应

采用磁控溅射的方式沉积不同Cr含量的Cu-Cr合金薄膜,通过与Sn-Ag-Cu(SAC)焊料在240 ℃下回焊形成焊点结构,然后将试样置于180 ℃下进行真空时效处理。研究Cu-Cr合金作为凸点下金属化(UBM)层时与SAC形成焊点的焊接可靠性。使用配备能量色散X射线光谱仪的场发射扫描电镜和多功能推力测试仪等分析界面金属间化合物(IMC)的形貌及焊点的剪切强度。结果表明,SAC/Cu-Cr焊点结构在回焊后形成了不同于传统的SAC/Cu焊点扇贝状IMC的针状IMC。在时效处理后,Cr在晶界处的偏析形成了富铬层,其作为扩散阻挡层阻碍Cu扩散到IMC中,使得Cu₃Sn和柯肯达尔空洞的生长受到抑制。剪切强度测试结果表明,回焊后SAC/Cu-Cr试样比SAC/Cu试样具有更高的剪切强度。Cr靶电流为1.5 A的Cu-Cr合金UBM层形成的焊点结构具有较小的IMC厚度,且拥有最高的焊点剪切强度。证实了Cu-Cr 合金UBM层有利于提高焊接可靠性。     

SMT中再流焊工艺建模与仿真

主要介绍了国内外再流焊工艺建模与仿真研究现状。目前主要是焊点建模与仿真、元器件建模与仿真以及再流焊工艺建模与仿真方面。本文还重点介绍了再流焊工艺建模与仿真的几种方法,并对再流焊工艺建模与仿真存在的问题以及发展前景做了分析。     

Sn-Cu-Ni-Ce钎料对激光钎焊焊点力学性能的影响

采用Sn-Cu-Ni-Ce无铅钎料,研究了半导体激光软钎焊和红外再流焊方法对QFP48器件和0805矩形片状元件两种典型元器件的钎焊性能,针对使用不同成分钎料所得到的钎焊焊点,采用微焊点强度测试仪研究了其焊点力学性能的分布规律.结果表明,使用Sn-Cu-Ni-Ce钎料时,最佳激光输出电流显著高于Sn-Ag-Cu钎料或Sn-Pb钎料.Sn-Cu-Ni-Ce钎料成分相同时,半导体激光软钎焊得到的焊点力学性能显著优于红外再流焊焊点的力学性能;稀土元素Ce的加入能够改善Sn-Cu-Ni无铅钎料焊点的力学性能,Ce含量达到0.03%时,焊点的力学性能最佳.     

回流焊冷却过程中PBGA焊点力学行为分析

以热弹塑性理论为基础,建立球栅阵列PBGA焊点在回流焊工艺中焊接应力的有限元模型,利用ANSYS的热结构耦合功能,采用生死单元法对Sn-Ag-Cu焊点回流焊的冷却过程进行数值模拟分析.焊点冷却结晶后的初始阶段,等效应力随温度的降低快速增加,当焊点的温度逐渐降低至室温时,等效应力为最大.结果表明,在回流焊接工艺中,PBGA焊点的裂纹极可能发生在焊料冷却结晶后的初始阶段,在焊点高应力集中区首先开裂,并在应力的作用下沿界面逐渐扩展.对焊料凝固初期冷却速率的控制是减少焊接裂纹产生的有效方法.