LD抽运Nd:YVO4/LBO腔内和频橙黄光连续激光器

报道了一种激光二极管抽运Nd:YVO4晶体、腔内Ⅰ类临界相位匹配LBO和频、连续波输出的全固态橙黄色激光器的设计和实验结果。橙黄色激光由Nd:YVO4晶体的1064nm和1342nm谱线腔内和频产生,输出波长为593.5nm。实验采用了双镜谐振腔结构,在1.6W的808nm注入抽运功率下,获得了最高功率为84mW连续波TEM00的橙黄色低噪声激光输出,光-光转换效率为5.3%,光束质量因子M21.2。实验和分析表明,采用激光二极管抽运Nd:YVO4晶体、LBOⅠ类临界相位匹配腔内和频是获得橙黄色激光的实用方法,并可以应用到Nd:YVO4晶体的其它谱线或具有多条谱线的其它激光增益介质,获得更多不同颜色的单谱线激光输出。     

基于角度切割MgO:PPLN晶体的高平均功率、稳定的连续波单振荡光学参量振荡器

报道了一台稳定的、高平均功率连续波光学参量振荡器,该振荡器为单谐振环形腔结构,参量晶体为角度切割的掺氧化镁周期性极化铌酸锂(MgO:PPLN),由一台波长为1064 nm的Nd:YVO4固态激光器泵浦。在9.8 W的泵浦功率下,可得到波长3069.1 nm的闲频光功率2.15 W,其泵浦-闲频光转换效率达21.0%。得益于腔内寄生振荡的减弱以及热自稳效应,振荡器的输出功率在30分钟内的稳定性优于0.19%均方根偏差(rms)。     

全固态激光器方形倍频晶体KTP温度场的研究

KTP晶体腔内倍频时具有的非均匀温升,对于LD抽运的全固态绿光激光器的性能有着较大的影响。为了提高激光器的性能,需对倍频晶体KTP内部温度场分布进行研究。通过对Nd:YVO4/KTP激光器中KTP晶体工作特点的分析,建立了符合实际的热分析物理模型,并利用解析热分析方法得出了方形晶体KTP的温度场分布的一般通解表达式。由于研究依据的方形晶体热模型较好地符合了激光器的实际情况,因此结论也就更为合理。研究结果表明,依据方形热模型计算KTP晶体得到的最大温升比圆柱形热模型得到的最大温升要略高一些。为研究由于温升导致的位相失配提供了必要的理论基础,对提高Nd:YVO4/KTP绿光激光器的性能具有指导意义。     

应力双折射对Nd:YVO4激光输出功率的影响

从研究目前热门的激光晶体Nd:YVO4应力双折射入手,研究了其对激光非线性输出的影响.通过实验发现,激光晶体的应力双折射虽然很小,但是一定的应力双折射会导致激光的非线性输出.通过实验掌握了一套方法,可挑选质量好的激光晶体,以便获得稳定的激光输出.     

355nm和1064nm全固态激光器刻蚀印刷线路板

采用输出功率8 W的355 am Nd:YVO4紫外激光器和50 w的1064 nm Nd'YAG激光器对覆铜板(CCL)和柔性线路板(FPC)进行了刻蚀实验,研究了激光功率密度、重复频率、扫描速度和单脉冲能量等加工工艺参数对刻蚀质量的影响.实验结果表明,由于铜和聚合物材料对紫外激光有更高的吸收率,紫外波段的激光只需要较低的能量就可以将表面铜层刻蚀完全,并且引起的热作用也较小.相反,红外激光加工最大的优势就是对环氧树脂和聚酰亚胺基板的破坏较小,从而适合于表面铜层的去除加工.与此同时,355 nm紫外激光器由于能快速轻易地将厚聚合物基板分离,更适合于印刷线路板(PCB)的切割成型加工.     

Formation technology of through metallized holes to sources of high-power GaN/SiC high electron mobility transistors

The technology of through metallized holes to sources of high-power GaN/SiC high electron mobility transistors is studied. The dependences of the reactive ion etch rate of SiC in the inductively coupled plasma discharge on the pressure of the SF₆/O₂/Ar gas mixture (5–40 mTorr), the high-frequency power applied to the bottom electrode (200–300 W), the working gas flow ratio (5 : 1 : (0–10)), and the bottom electrode temperatures (5–50°C) are studied. Based on these dependences, the hole etching process on 76-mm-diameter SiC substrates 50 and 100 μm thick is developed. The process features smooth etched-surface morphology, a high rate (1 μm/min), and low high-frequency power deposited into the inductively coupled plasma discharge (1000 W). The developed process of hole etching in SiC substrates is characterized by the selectivity coefficient S = 12 and the anisotropy coefficient A = 13. Films based on NiB are recommended as masks for etching through holes into SiC substrates. The processes of through-hole metallization by the electrochemical deposition of Ni and Au layers are developed.     

Laser processing for microelectronics packaging applications

The microelectronics industry is moving toward smaller feature sizes. The main driving forces are to improve performance and to lower cost. From the performance point of view the small distances between chips together with the short interconnection routes have of great importance in order to achieve faster operation. Laser processing applied for via generation, direct pattern processing, image transfer, contour cutting, trimming, etc. has proved to be efficient method for making rapid progress in this direction. On the other hand, smaller spaces between conductive patterns increase the risk of short circuits (caused by pattern faults, solder bridges, migration, etc.), that emphasizes the reliability aspects of applied process technologies.The paper describes the results of research projects that aimed at the application of CO₂ and frequency-multiplied Nd:YAG lasers for drilling and direct patterning of copper clad glass fiber reinforced epoxy laminates, polyester foils and a couple of other structures. The physics of processing using five wavelengths, i.e. 10 600, 1064, 532, 355 and 266 nm, were modeled, examined and evaluated. Laser processing was combined with other – mainly metal coating – processes, e.g. the through contacting of the generated vias were carried out by screen printing with polymer thick films, by wet chemical direct plating and by evaporation of thin metal layers, but the details of metallization are not given here.The conclusion summarizes the results and refers to the possibilities of laser processing of metal layers and polymeric materials in microelectronics packaging applications.     

SiC via holes by laser drilling

Through-wafer vias were formed in 400-μm-thick bulk 4H-SiC substrates by CO₂ laser drilling (1.06-μm λ) with a ?-switched pulse width of ∼30 nsec and a pulse frequency of 8 Hz. The resultant pulse energy delivered to the SiC surface was on the order of 60 mJ/pulse. Laser drilling produces much higher etch rates (229–870 μm/min) than conventional dry etching (0.2–1.3 μm/min) and the via entry can be tapered to facilitate subsequent metallization. Laser drilling combines optical and mass spectroscopic methods to in-situ monitor and control the laser ablation plume and ionized debris, reducing the total residual surface contamination.     

半导体泵浦全固态紫外激光器

报道了LD泵浦Nd:YAG,经过KTP和LBO晶体中的倍频、和频,产生355nm紫外激光的全固态调Q激光器.当泵浦功率为100W,脉冲频率5kHz时,产生的1064nm基频光功率为20W,绿光功率为5.62W,输出450mW的紫外激光脉冲,转换效率为8%.     

调QNd:YAG脉冲激光在LiIO3中倍频的应力波

当调QNd:YAG脉冲激光通过LiIO3晶体时,由于晶体弱吸收激光而在其内激起应力波.在激光倍频时这种波得到增强,并随倍频的位相失配角变化.研究表明,这是因为激光倍频时部分1.064μm的基频激光转换成0.532μm的倍频光,并且LiIO3晶体吸收倍频光比吸收基频光更强.     

LD泵浦Nd:YVO4倍频调Q激光器的输出特性

根据四能级非线性速率方程,对连续LD泵浦Nd:YVO4/Cr4+:YAG/KTP腔内倍频被动调Q绿光激光器的输出特性进行了数值模拟.理论分析与实验相一致,所得结果对该类器件参数优化具有参考价值.     

双端抽运Nd:YVO4激光晶体的半解析热分析

通过对激光二极管双端抽运Nd:YVO4晶体的分析,建立符合实际工作条件的热模型和边界条件,利用半解析热分析方法得出了激光晶体内部温度场和端面的热形变计算公式,并对影响温度场分布的各种因素进行了理论分析与计算。所得出的结论可以推广到其它激光晶体,为有效地解决激光晶体热效应问题提供了理论基础。     

Laser-diode pumped Nd: GdVO4 ultraviolet laser with LBO frequency tripling

We have demonstrated a laser-diode pumped Nd.GdVO4 extra-cavity frequency tripling ultraviolet laser with a LBO crystal in this paper. Under the acousto-optic （A-O） Q-switched operation, we have obtained 355 nm ultraviolet laser,with pulse width of 25 ns and pulse repetition rate of 20 kHz. By using a type Ⅰ non-critical phase-matched LBO crystal, the SHG output power of 822 mW is achieved at the incident pump power of 16 W. The output power of 355nm UV laser is 260mW with a type Ⅱ phase-matched LBO crystal,and the conversion efficiency （1 064 nm-355 nm） is 5.9 %. The power stability of 355 nm laser is 1.7% in 1 h.     

温度自动补偿技术在DPL中的应用

针对DPL激光器中温度变化对激光输出功率的影响,设计并实现了基于TL494脉宽调制控制器的实时双向温度控制器,使激光晶体和Q开关在任何环境温度下都可以保持恒定的设定温度。通过在实际的Nd:YVO4半导体二极管抽运激光器上的使用,证明该技术稳定可靠,能够使激光器输出功率保持稳定。     

Generation of picosecond vortex beam in a self-mode-locked Nd:YVO4 laser

In this paper, a self-mode-locked Nd:YVO4 picosecond vortex laser is demonstrated, which can operate on the different Laguerre-Gaussian (LG) modes at 1 064 nm. A π/2 mode converter is utilized to realize the picosecond vortex laser with LG mode transformed from the high-order Hermite-Gaussian (HG) mode. For the proposed laser, the mode-locked pulse repetition rate is 1.81 GHz. The average output powers of LG12 mode and LG02 mode are 1.241 W and 1.27 W, respectively, and their slope efficiencies are 23.2% and 24%, respectively. This work has been supported by the National Natural Science Foundation of China (No.61108021), and the Fundamental Research Funds for the Central Universities (Nos. 2013JBM091 and S16JB00010). E-mail:pengjiying@163.com      

High power output quasi-continuous-wave nanosecond optical parametric generator based on periodically poled lithium niobate

We report on a high power output quasi-continuous-wave nanosecond optical parametric generator （OPG） of congruent periodically poled lithium niobate （PPLN） pumped by a 1 064 nm acousto-optically Q-switched Nd-YVO4 laser （duration. 70 ns,repetition rate：45 kHz,spatial beam quality M2〈 1,3）. The OPG consists of a 38.7 mm long PPLN crystal with a domain period of 28.93 μm. With 5.43 W of average pump power the maximum average output power is 991 mW at 1 517.1 nm signal wave of the PPLN OPG.     

激光熔覆SiC/不锈钢粉末复合涂层的组织与性能

用 2 k W Nd:YAG激光在 4 0 Cr钢基体上制取了 Si C强化的 Fe基复合材料涂层 ,并对熔覆层进行了显微组织结构和性能测试 .加入的 Si C包括颗粒状和纤维状两种形态 ,通过调整颗粒状Si Cp和纤维状 Si Cf的加入量 ,研究了 Si C在激光熔覆过程中的演变、存在形式及对熔覆层硬度的影响 .结果表明 ,随着加入量的增加 ,熔覆层中未熔 Si C含量增加 ,熔覆层硬度也随之提高 ;对比加入颗粒状和纤维状 Si C的熔覆层的显微硬度表明 ,同含量情况下纤维状 Si C的强化效果更显著 ;造成熔覆层硬度显著提高的原因是未熔 Si C,析出相 Fe Si C的弥散强化和熔入的 Si,C元素引起的固溶强化作用 .     

Gd_xY_(1-x)Ca_4O(BO_3)_3晶体非临界相位匹配产生1064nm三次谐波

通过研究生长不同Gd离子和Y离子配比组份的GdxY1 -xCa4 O(BO3) 3晶体 ,得到了室温下可以实现非临界相位匹配产生 10 64nm三次谐波的新型非线性光学晶体Gd0 .37Y0 .6 3Ca4 O(BO3) 3。报道了GdxY1 -xCa4 O(BO3) 3晶体实现10 64nm三次谐波的相位匹配角。用电光调Q的Nd∶YAG激光器对一块长 11mm ,Y 轴切割的Gd0 .37Y0 .6 3Ca4 O(BO3) 3晶体进行了转换效率的测量 ,其结果为 14 7%。     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave （CW） 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd： YVO4 and using LBO as the intra-cavity SHG crystal. With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457 nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the output power is better than 1.2% for 8 h continuously working.     

Nd:YAG/Cr:YAG键合晶体的355 nm激光器

报道了一台基于Nd:YAG/Cr:YAG键合晶体的全固态355 nm紫外(UV)激光器的设计及实验结果.采用平-平腔结构获得高峰值功率、小束腰的1064 nm基频光.在谐振腔外,未聚焦的1064 nm基频光经KTP晶体倍频产生532 nm波长激光,二者再经LBO晶体和频获得355 nm紫外激光输出.实验中发现尽管Nd:YAG与Cr:YAG都是各向同性晶体,但在特定情况下输出的1064 nm基频光具有近似线偏振的特性,此特性可以有效地增加二次谐波产生(SHG)时基频光的利用率,从而提高整台激光器的转换效率.而基频光的谱线宽度及发散角也影响二次谐波及三次谐波产生(THG)的转换效率,需使其尽量在晶体的允许带宽及允许角范围以内.综合这几点因素,对激光谐振腔进行了仔细设计.当激光二极管(LD)抽运功率为8 W,激光器运行稳定时,基频光峰值功率达28 kW,最终获得平均功率为124 mW的355 nm紫外激光.