Grain Growth Control and Dopant Distribution in ZnO-Doped BaTiO3

ZnO additions to BaTiO₃ have been studied in order to determine the role of this dopant on sintering and microstructure development. As a consequence of a better initial dopant distribution, samples doped with 0.1 wt% zinc stearate show homogeneous fine-grained microstructure, while a doping level of 0.5 wt% solid ZnO is necessary to reach the same effect. When solid ZnO is used as the dopant precursor, ZnO is redistributed among the BaTiO₃ particles during heating. Since no liquid formation has been detected for temperatures below 1400°C in the system BaTiO₃-ZnO, it is proposed that dopant redistribution takes place by vapor-phase transport and grain boundary diffusion. Shrinkage and porosimetry measurements have shown that grain growth is inhibited during the first step of sintering for the doped samples. STEM-EDX analysis revealed that solid solubility of ZnO into the BaTiO₃ lattice is very low, being strongly segregated at the grain boundaries. Grain growth control is attributed to a decrease in grain boundary mobility due to solute drag. Because of its effectiveness in controlling grain growth, ZnO appears to be an attractive additive for BaTiO₃ dielectrics.     

Sintering of Zinc Oxide Doped with Antimony Oxide and Bismuth Oxide

The phase change, densification, and microstructure development of ZnO doped with both Bi₂O₃ and Sb₂O₃ are studied to better understand the sintering behavior of ZnO varistors. The densification behavior is related to the formation of pyrochlore and liquid phases; the densification is retarded by the former and promoted by the latter. The pyrochlore phase, whose composition is Bi_3/2ZnSb_3/2O₇, appears below 700°C. The formation temperature of the liquid phase depends on the Sb/Bi ratio: about 750°C for Sb/Bi < 1 by the eutectic melting in the system ZnO—Bi₂O₃, and about 1000°C for Sb/Bi > 1 by the reaction of the pyrochlore phase with ZnO. Hence, the densification rate is determined virtually by the Sb/Bi ratio and not by the total amount of additives. The microstructure depends on the sintering temperature. Sintering at 1000°C forms intragrain pyrochlore particles in ZnO grains as well as intergranular layers, but the intragrain particles disappear at 1200°C by the increased amount of liquid phase, which enhances the mobility of the solid second phase.     

Effects of Additives on Microstructure and Properties of Alumina-Silicon Carbide Nanocomposites

Al₂O₃/5-vol%-SiC nanocomposites have been fabricated by using pressureless sintering with MgO and/or Y₂O₃ sintering aids and post-hot isostatic pressing (HIPing), which circumvents the limitations of hot pressing. Al₂O₃/SiC nanocomposites that have been doped with 0.1 wt% MgO and 0.1 wt% MgO + 0.1 wt% Y₂O₃ show an increased sintering density and a homogeneous microstructure, as well as a high fracture strength (1 GPa) after HIPing. In contrast, using Y₂O₃ as a dopant has a negative impact on the microstructure and the fracture strength. The results suggest that MgO, as a sintering additive, has a key role in improving the densification and controlling the microstructure of Al₂O₃/SiC nanocomposites.     

Influences of ZnO on the Properties of SrZr0.9Y0.1O2.95 Protonic Conductor

The effects of ZnO additive on the microstructure, phase formation, and electrical conduction of yttrium-doped strontium zirconate were investigated. The sintering temperature of SrZr_0.9Y_0.1O_2.95 can be lowered to 1350°C by addition of ZnO. The electrical conduction is found to be strongly correlated with the ZnO contents. When the ZnO content is <5 mol%, the electrical conductivity increased with an increase in the ZnO contents. Electromotive force measurements under fuel cell conditions indicated a pure ionic conduction over this range of ZnO contents. However, it had a detrimental effect on the electrical conduction when the ZnO content was more than 6 mol%. The main reason for this is discussed according to the defect chemistry and microstructure.     

Effects of La2O3/ZnO Additives on Microstructure And Microwave Dielectric Properties of Zr0.8Sn0.2TiO4 Ceramics

Dielectric ceramics of Zr_0.8Sn_0.2TiO₄ containing La₂O₃ and ZnO as sintering aids were prepared and investigated for microstructure and microwave dielectric properties. Low-level doping with La₂O₃ and ZnO (up to 0.30 wt%) is good for densification and dielectric properties. These additives do not affect the dielectric constant and the temperature coefficient. Dielectric losses increase significantly at additive levels higher than 0.15 wt%. The combined additives La₂O₃ and ZnO act as grain growth enhancers. With 0.15 wt% additives, a ceramic having a dielectric constant, a quality factor, and a temperature coefficient of frequency at 4.2 GHz of 37.6, 12 800, and –2.9 ppm/°C, respectively, was obtained. The quality factor was considerably improved by prolonged sintering.     

Effect of ZnO and CuO on the Sintering Temperature and Piezoelectric Properties of a Hard Piezoelectric Ceramic

Hard piezoelectrics with high dielectric and piezoelectric constants are used for high-power applications. However, the sintering temperature of these ceramics is high, around 1200°C, restricting the usage of cheap base metal electrodes in fabrication of multi-layer components. This study investigates the effect of CuO and ZnO on the sintering temperature of a hard piezoelectric, APC 841, which is a MnO₂- and Nb₂O₅-modified PZT. The addition of CuO decreased the sintering temperature through the formation of a liquid phase. However, the piezoelectric properties of the CuO-added ceramics sintered at ≤950°C were lower than the desired values. The addition of ZnO resulted in a significant improvement in the piezoelectric properties. This enhancement was attributed to the formation of a homogeneous microstructure with large grains. The APC 841+0.2 wt% CuO+1.1 wt% ZnO ceramics sintered at 950°C showed excellent piezoelectric and dielectric properties with values of k _p=0.532, Q _m=750, d ₃₃=351 pC/N, ɛ₃₃/ɛ_o=1337, and T _c=280°C.     

Microstructure and Crystal Phases of Praseodymium Oxides in Zinc Oxide Varistor Ceramics

The effect of sintering temperature on the microstructure and crystal phases of the intergranular praseodymium oxides in ZnO varistor ceramics was investigated using transmission electron microscopy and high-resolution electron microscopy. The ZnO grains were three-dimensionally separated from the intergranular praseodymium oxides. On the basis of microdiffraction analyses of the intergranular layer, the phase transformation from fcc-Pr₆O₁₁ into hcp-Pr₂O₃ was found when the sintering temperature increased from 1300° to 1350°C. The defect reaction equation and the decrease of donor concentration with increasing sintering temperature can verify the certainty of phase transition during the liquid-phase sintering observed by transmission elecron microscopy. Additionally, on the basis of the small variations of the breakdown voltage per grain boundary, the number of active grain boundaries is not a dominant factor for the donor concentration dependence on the sintering temperature.     

Microstructure and Nonlinear Properties of Microwave-Sintered ZnO-V2O5 Varistors: I, Effect of V2O5 Doping

The modification of the densification behavior and the grain-growth characteristics of the microwave-sintered ZnO materials, caused by the incorporation of V₂O₅ additives, have been systematically studied. Generally, the addition of V₂O₅ markedly enhances the densification rate, such that a density as high as 97.9% of the theoretical density and a grain size as large as 10 µm can be attained for a sintering temperature as low as 800°C and a soaking time as short as 10 min. Increasing the sintering temperature or soaking time does not significantly change the sintered density of the ZnO-V₂O₅ materials but it does monotonously increase their grain size. Varying the proportion of V₂O₅ in the range of 0.2-1.0 mol% does not pronouncedly modify such behavior. The leakage current density ( J _L) of these high-density and uniform-granular-structure samples is still large, which is amended by the incorporation of 0.3 mol% of Mn₃O₄ in the ZnO materials, in addition to 0.5 mol% of the V₂O₅ additives. Samples that are obtained using such a method possess good nonohmic characteristics (α= 23.5) and a low leakage current density ( J _L= 2.4 10^-6 A/cm²).     

The Influence of ZnF2 Doping on the Electrical Properties and Microstructure in Bi2O3–ZnO-Based Varistors

ZnO varistors with different amounts of ZnF₂ from 0.00 to 0.80 mol% were prepared using a solid-state reaction technique, to explore the potential application of ZnO. The F-doping effects on the microstructure and electrical properties of ZnO-based varistors were investigated. The average grain size of ZnO increased from 4.93 to 6.48 μm as the ZnF₂ content increased. Experimental results showed that as the ZnF₂ content increased, the breakdown voltage decreased from 617 to 367 V/mm, and the nonlinear coefficient did not change much. However, a slight increase was observed in the leakage current. Besides, when the ZnF₂ content increased, the donor concentration increased from 0.669 × 10¹⁸ to 8.720 × 10¹⁸ cm⁻³. The study indicated that ZnF₂ played a similar role as sintering aids to promote grain growth and the substitutional F atoms in the bulk served as a donor to increase the donor concentration.     

Processing Effects on Microstructure and Superconducting Properties of Sintered YBa2Cu3O6+x

The relationships between the microstructure of sintered YBa₂Cu₃O_{6+ x} superconductors and processing variables (sintering time, sintering temperature, and oxygen partial pressure) were examined. Large-grained microstructures were obtained in 100 kPa oxygen sintering atmospheres, while fine-grained microstructures were obtained in 2 kPa oxygen. The formation of liquid phases below the peritectic decomposition temperature of YBa₂Cu₃O_{6+ x} was found to have an effect on both the microstructure (as observed by optical and transmission electron microscopy) and the transport critical current density ( J_c ). The critical current density was found to be highest for sintering below the lowest invariant point, which is a function of the oxygen partial pressure. However, over the range of conditions examined here, there does not appear to be any correlation between microstructural features, such as average grain size and aspect ratio, and the transport J_c .     

Dependence of Electrical Conductivity of ZnO on Degree of Sintering

The electrical resistivity of ZnO doped with Al₂O₃ was measured in air and under reduced pressure (∼0.5 mm Hg) in the range from 30° to 680°C as a function of the degree of sintering. The data obtained were explained in terms of the effects of the microstructure of the sintered body and the chemisorbed oxygen. There are two mechanisms of electrical conduction involved, only one of which is affected by the microstructure.     

Microstructural Development in SnO2-Doped ZnO–Bi2O3 Ceramics

The effects of adding small quantities of SnO₂ to the basic ZnO–Bi₂O₃ varistor composition were studied in terms of phase reactions, microstructural development, and the formation of inversion boundaries. Scanning and transmission electron microscopy studies showed that the inversion boundaries, triggered by the addition of SnO₂, cause anisotropic grain growth in the early stages of sintering. ZnO grains that include inversion boundaries grow exaggeratedly, at the expense of normal grains, until they dominate the microstructure. Higher additions of SnO₂ lead to an increase in number of grains with inversion boundaries and to a more fine-grained microstructure. The increasing amount of secondary phases is also related to a higher level of SnO₂ addition; however, the influence of these phases on ZnO grain growth is subordinate to the role of inversion boundaries.     

Grain Growth of ZnO during Bi2O3 Liquid-Phase Sintering

Grain growth of ZnO during the liquid-phase sintering of binary ZnO–Bi₂O₃ ceramics has been studied for Bi₂O₃ contents from 3 to 12 wt% and sintering from 900° to 1400°C. The results are considered in combination with previously published studies of ZnO grain growth in the ZnO–Bi₂O₃ system. For the Bi₂O₃ contents of the present study, the rate of ZnO grain growth is found to decrease with increasing Bi₂O₃. Activation analysis, when combined with the results of similar analyses of the previous studies, reveals a change in the rate-controlling mechanism for ZnO grain growth. Following a low-Bi₂O₃-content region of nearly constant activation energy values of about 150 kJ/mol, further Bi₂O₃ additions cause an increase of the activation energy to about 270 kJ/mol. consistent with accepted models of liquid-phase sintering, it is concluded that the rate-controlling mechanism of ZnO grain growth during liquid-phase sintering in the presence of Bi₂O₃ changes from one of a phase-boundary reaction at low Bi₂O₃ levels to one of diffusion through the liquid phase at about the 5 to 6 wt% Bi₂O₃ level and above.     

Microstructure and Current–Voltage Characteristics of Multicomponent Vanadium-Doped Zinc Oxide Varistors

The effects of the oxide additives MnO₂, Co₃O₄, and Sb₂O₃, commonly incorporated in commercial Bi₂O₃-doped ZnO varistors, on the current–voltage characteristics and microstructure of 0.25 mol% V₂O₅-doped ZnO varistors have been studied. MnO₂ is the most significant additive in terms of its effects on varistor performance. Varistor performance can also be improved by increasing the V₂O₅ content to 0.5 mol% in a ZnO ceramic containing 1 mol% MnO₂. Further increases in the V₂O₅ content of 1 mol% MnO₂-doped material cause a deterioration in varistor behavior. The microstructure of the samples consists mainly of ZnO grains with zinc vanadates as the minority secondary phases. Additional spinel phase is formed when Sb₂O₃ is incorporated.     

Sintering Temperature Dependence of Grain Boundary Resistivity in a Rare-Earth-Doped ZnO Varistor

We present a rare-earth-doped ZnO ceramic with nonohmic electrical properties. Analysis of the microstructure and composition indicates that the ceramic is composed of the main phase of ZnO and the second phase of rare-earth oxides (e.g., Dy₂O₃, Pr₆O₁₁, Pr₂O₃). The average grain size is markedly increased from 3 to 18 μm, with an increase in the sintering temperature from 1150° to 1350°C. The corresponding varistor voltage and nonlinear coefficient decrease from 1014 to 578 V/mm, and from 15.8 to 6.8, respectively. The resistivity of grain and grain boundary evaluated by the complex impedance spectrum indicates that the resistivity of the grain is approximately constant (∼10³Ω), and the resistivity of the grain boundary decreases. The relative dielectric permittivity of the sintered ceramic samples is much larger than that of pure ZnO ceramic, which should be ascribed to the internal boundary layer capacitance effect.     

Effect of Weight Loss on Liquid-Phase-Sintered Silicon Carbide

The evaporation of silicon carbide (SiC) ceramics during sintering has been studied by thermogravimetry in a graphite furnace filled with argon. The SiC powder compacts contained 7.5 wt% eutectic composition of Y₂O₃–Al₂O₃ to promote liquid-phase sintering. A weight loss of 1–11 wt% was observed during sintering, depending on the sintering temperature and sintering time. The weight loss severely influenced the final density and the microstructure of the SiC ceramics. Particularly, the oxide sintering aids, which were homogeneously distributed in the green ceramics, were observed to segregate and form particular patterns that were dependent on the temperature, sintering time, and the total weight loss. Possible heterogeneous reactions evolving volatile species have been discussed in relation to the experimental observations.     

Phase Identification and Electrical Properties in ZnO–Glass Varistors

Ceramic varistors based on ZnO with lead zinc borosilicate glass instead of Bi₂O₃ were prepared. The effect of sintering conditions on the electrical properties was studied by sintering samples at various temperatures and cooling them at different rates. The sample sintered at 1250°C for 1 h, then furnace cooled, possessed the best electrical properties, as characterized by the highest nonlinear coefficient, lowest leakage current, and lowest degradation. The microstructure and crystal structure of the glass phase of ZnO–glass varistors were examined by means of scanning electron microscopy, transmission electron microscopy, and powder X-ray diffractometry. The glass phase was originally amorphous, but crystallized as an intergranular layer in the sintered and furnace-cooled samples. This crystallized phase was a zinc borate phase (5ZnO·2B₂O₃), which was identified by X-ray diffractometry, transmission electron microscopy, and Auger electron spectroscopy. The zinc borate phase at the grain boundary of ZnO–glass samples enhanced the nonohmic characteristics of the ceramic varistors.     

Microstructural and Thermoelectric Characteristics of Zinc Oxide-Based Thermoelectric Materials Fabricated Using a Spark Plasma Sintering Process

M-doped zinc oxide (ZnO) (M=Al and/or Ni) thermoelectric materials were fully densified at a temperature lower than 1000°C using a spark plasma sintering technique and their microstructural evolution and thermoelectric characteristics were investigated. The addition of Al₂O₃ reduced the surface evaporation of pure ZnO and suppressed grain growth by the formation of a secondary phase. The addition of NiO promoted the formation of a solid solution with the ZnO crystal structure and caused severe grain growth. The co-addition of Al₂O₃ and NiO produced a homogeneous microstructure with a good grain boundary distribution. The microstructural characteristics induced by the co-addition of Al₂O₃ and NiO have a major role in increasing the electrical conductivity and decreasing the thermal conductivity, resulting from an increase in carrier concentration and the phonon scattering effect, respectively, and therefore improving the thermoelectric properties. The ZnO specimen, which was sintered at 1000°C with the co-addition of Al₂O₃ and NiO, exhibited a ZT value of 0.6 × 10⁻³ K⁻¹, electrical conductivity of 1.7 × 10⁻⁴Ω⁻¹·m⁻¹, the thermal conductivity of 5.16 W·(m·K)⁻¹, and Seebeck coefficient of −425.4 μV/K at 900°C. The ZT value obtained respects the 30% increase compared with the previously reported value, 0.4 × 10⁻³ K⁻¹, in the literature.     

Effect of Bismuth of Oxide Content on the Sintering of Zinc Oxide

Densification and microstructure de velopment in Bi₂O₃-doped ZnO have been studied with a special emphasis on the effect of the Bi₂O₃ content. A small amount of Bi₂O₃ in ZnO (0.1 mol%) retarded densification, but the addition of Bi₂O₃ to more than 0.5 mol% promoted densification by the formation of a liquid phase above the eutectic temperature (∼740°C). The liquid phase increased grain-boundary mobility, which was responsible for the formation of intragrain pores and the decrease in the sintered density. The increase in the Bi₂O₃ content increased the probability of the formation of skeleton structure, which reduced the grain growth rate and the sintered density.     

Evolution of Microstructure and V-Shaped Positive Temperature Coefficient of Resistivity of (Pb0.6Sr0.4)TiO3 Materials

The effects of various liquid-phase sintering aids on (Pb_0.6SrO_0.4)TiO₃ ceramics have been investigated. The relationships between electrical properties and microstructures have been scrutinized. It has been found that, among the sintering aids studied, only SiO₂ exhibits a significant effect on the grain growth of (Pb_0.6SrO₄)TiO₃. The optimum firing profiles for sound microstructure and good electrical properties of (Pb_0.6SrO_0.4)TiO₃+ 5.0 mol% SiO₂ have been established. The V-shaped electrical behavior is prominent, and a PTCR jump of about 10^2.9 is observed. The formation of cation vacancies may increase the resistivity of the over-fired specimens. Various milling methods to pulverize the calcined powder and the optimum amount of packing protection powder during sintering are also discussed.