一种新型超宽带平面单极子天线

设计了一种结构简单的H形双面印刷超宽带单极子天线.通过采用FDTD建模和HFSS软件仿真分析发现,适当调整天线凹槽的长宽和改变馈电结构可以调整天线的中心频率与带宽.由此设计制作了这种天线,并进行实验测试.结果表明:在厚度为0.15 cm的介质基片上,双面印刷的H型单极子天线, 实测带宽可达53 %(VSWR＜2.0), 中心频率处增益达2.88 dB.     

探针馈电印刷线天线的矩量法分析——（Ⅰ）单臂天线

利用同轴内导体延和为探针对印刷天线进行直接馈电是一种易于实现的馈电方式。本文介绍了一种分析单臂探针馈电印刷线天线的数值方法,该方法是基于并矢格林函数和互易定量求解电流积分方程的矩量法,适合于分析任意形状印刷线天线,首先给出描述电流分布的积分方程及其矩量法求解公式,在解得电流分布基础上,应用驻相法计算远区辐射场,通过计算与实验比较,验证了分析方法和计算程序的正确性,最后对一圆极化开口印刷圆环天线进行分析计算,表明了方法的实用价值。     

一种新型超宽带天线的设计

针对无线通信系统对超宽带(Ultra-Wideband,UWB)天线小型化的需求,提出了一种同轴馈电的UWB天线,由常规的椭圆单极子天线演变而成.为了获得UWB特性,天线的辐射单元由7个完全相同的椭圆单极子合理组合而成.该天线印刷在相对介电常数为4.4、 厚度为1.6 mm的FR4介质板上,并通过同轴进行馈电,天线的结...     

超短波印刷天线的研究

本文讨论了一种新型全向宽频带超短波印刷天线。利用设计天线辐射体的外形尺寸和债电处接地体的阶梯渐变结构来改变分布电容，达到阻杭匹配的目的。在５０ＭＨＺ频带内驻波比小于１．２，在使用频段１５ＭＨＺ频带内驻波比小于１．１。采用十字形馈电方式，利用两直立板状辐射体形成腔体传输水平极化分量，两极板构成直立天线对，使天线的方向图为半球状。采用这种设计方法可减小天线的尺寸。     

一种带有新型馈电结构的宽带印刷角锥四臂螺旋天线

本文提出一种新型馈电结构的印刷角锥四臂螺旋天线。通过采用柱面共形结构馈电网络,与传统四臂螺旋天线相比极大地减小了地板安装面积及改善了阻抗带宽和轴比带宽。S11小于-10dB的阻抗带宽可达39.7%,3dB轴比带宽约22%。测试与仿真结果吻合良好。     

宽带高增益直角反射器天线

该文设计了一种基于直角反射器的宽带高增益天线。天线结构包括八元印刷偶极子阵、一分八并联馈电网络、直角反射器。平行双线形式馈电网络实现各偶极子单元平衡馈电的同时具有阻抗变换作用,从而保证了辐射单元具有良好的幅相特性。馈电网络和辐射单元均印刷在介电常数为2.65的介质基板上,使得天线结构简单、成本低、易加工。将印刷有辐射单元和馈电网络的介质板放置于直角反射器内提高天线的增益。测试结果显示,该天线电压驻波比(VSWR)≤2的相对阻抗带宽达到21.4%（7.00~8.68 GHz）,在对应的阻抗带宽内,天线增益达到17 dBi。     

一种共面波导馈电的缝隙型超宽带天线

针对超宽带通信系统,提出一种小型超宽带天线,可以应用于终端设备。天线类型为共面波导馈电的缝隙型,缝隙结构为一矩形与一圆形组合而成,馈电结构与缝隙结构相似。天线的面积为22 mm×27 mm,印刷在厚度为0. 5 mm的FR4衬底上. 通过软件仿真分析了天线的工作原理以及尺寸对带宽的影响,仿真结果显示天线的带宽在不同的衬底厚度下均能覆盖UWB频段。天线的测试带宽为2.4 GHz~14.4 GHz,在超宽带的工作频段内测试效率超过76% ,测试增益大于2.1 dBi。     

改进型超宽带Vivaldi天线设计与仿真

在传统Vivaldi天线结构的基础上,设计了两种适用于宽带信号收发系统的改进型渐变槽Vivaldi天线以及同轴馈电型对踵Vivaldi天线,并利用电磁仿真软件HFSS对这两种Vivaldi天线的性能进行优化分析.通过对不同结构Vivaldi天线的对比分析结果可以看出改进型渐变槽Vivaldi天线和同轴馈电型对踵Vivaldi天线在频段、带宽、驻波比等方面均达到宽带传输系统的设计要求.     

三维TEM喇叭天线瞬态辐射的FDTD模拟

本文应用FDTD方法分析放置于无限大理想导体地面上并由同轴线馈电的TEM喇叭天线瞬态辐射问题。对FDTD计算区域中的细导线结构采用网格共形技术进行了特殊处理,同时引入一维传输线模型模拟同轴线馈电以大大减少FDTD的计算空间,并实现了天线与同轴线相互耦合的FDTD方法。数值结果表明本文方法处理瞬态天线辐射问题的有效性。     

多频段印刷振子天线的分析与试验

本文讨论了由同轴线馈电、背面带有接地板的宽印刷振子天线的特性。文中着重分析了天线的几何参数对天线带宽特性的影响，进行了一定的试验，得到了一些实际有用的结论。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks