电子器件可靠性的噪声表征方法

随着电子器件朝着高性能、小尺寸和长寿命方向发展，传统的寿命试验可靠性评价方法的局限性日益显著，近年来得到的大量研究结果表明，对于大多数电子器件，噪声是导致器件失效的各种潜在缺陷的敏感反映，噪声检测方法以其灵敏、普适、快速和非破坏性的突出优点，正在发展成为一种新型的电子器件可靠性表征工具，本文对该领域目前的研究进展做了概括性的评述。     

电子束器件加速寿命试验的机理分析

寿命试验是鑑定器件质量和检查材料、工艺的一种有效方法:它是电子器件例行试验中必须进行的主要试验项目。随着电子器件质量的不断提高,加上新工艺,新材料的不断使用,其寿命增加很快,普遍地将达到10000小时以上的水平。在这种情况下,用常规的寿命试验方法来鑑定电子器件质量和检查材料,工艺性能是远远不能满足生产上的要求。我们很希望用一种快速的寿命试验方法来代替常规的试验方法,这样才能及时地指导生产,并加快长寿命材料、工艺的研究步伐。 加速寿命试验方法在一些电子器件中已经有效地加以应用     

关于长寿命氧化物阴极的一些试验

一、概述电子器件特别是超高频电子器件近十多年来发展极为迅速,特别是,随着空间技术的发展,要求长寿命行波管。阴极是电子器件的心脏,必须首先做到长寿命。影响阴极寿命的因素很多,我们认为:要延长阴极寿命,必须提高阴极的发射能力,增强阴极的活性,从而保证在器件支取的电流密     

基于改进粒子群优化算法nMOSFET寿命预测

对于电子器件寿命预测问题,文章提出了基于改进粒子群优化算法的BP神经网络电子器件寿命预测方法。首先对nMOSFET元件在不同应力条件下进行寿命试验,根据试验测试获得的寿命数据,得出对应的可靠性。文章通过结合改进粒子群优化算法和BP神经网络结合,建立电子器件寿命预测模型,应用该模型对相同应力条件的电子器件寿命进行预测,同时对应力加速条件下寿命的预测。通过试验证明,该算法具有更强的非线性拟合能力和更高的准确率。     

接收用电子束管的加速寿命试验机理分析和数据处理

寿命试验是(钅监)定电子器件质量和检查材料,工艺的一种有效方法。它是电子器件例行试验中必须进行的主要试验项目。随着电子器件质量的不断提高,加上新工艺,新材料的不断使     

一种高可靠长寿命阴极

正 空间技术的发展向电子器件提出了高可靠、长寿命的要求,这又使电子器件向阴极提出了同样的要求。在国外,解决的办法是,使用以锆镍或钨锆镍作基金属的氧化物阴极,再加上高水平的造管工艺等措施来保证电子器件的高可靠和长寿命。我们根据当前国内     

压电蜂鸣器

过去所用的警报器件主要是机械蜂鸣器.这种发声体虽然价廉,但因为是靠触点打击金属发出声响,因此触点的磨损就决定了警报器的寿命,连续工作寿命一般只有50小时左右.此外还存在锈蚀等问题,其用途受到很大限制.随着集成电路、大规模集成电路的发展,电子器件也要求小型化、高级化、多功能化.因此又发展了电子蜂鸣器.电子蜂鸣器的特点是体积小、重量轻、体型薄、功耗小,无噪声、长寿命、高可靠而且音色好,因而得到了迅速的发展和广泛的应用.警报器件可分为自激型和他激型.     

光通信用高速光电子器件和光模块质量考核试验问题研究

介绍和讨论光通信用高速光电子器件和光模块的质量考核试验相关标准、可靠性试验项目、光电子器件和光模块抽样方案、加速寿命试验和平均中值寿命等问题。     

电子器件散粒噪声的测试方法

随着社会的进步和科技的发展,电子器件在生活中越发普及,第二次工业革命使人类社会正式进入了电气时代,第三次工业革命使人类社会进入了信息时代,现代社会生活中所用到的各类电子器件,几乎都是两个时代共同作用下的产物,虽然科技在持续进步,但电子器件依然存在各种问题,散粒噪声是其中相对较为普遍的一个,本文从散粒噪声的相关知识出发,浅析散粒噪声的测试方法。     

结型晶体管噪声性能的实验研究

一、引言噪声通常是指电学系统中那些无规则的杂乱的电流起伏,是电子器件的固有属性之一.它决定了用在放大和接收设备中电子器件的极限灵敏度.晶体管主要用来接收和放大微弱的电信号,因此在晶体管问世后随即开始了它的噪声性能的研究.1952年比德里兹提出了与p-n结有关器件的噪声理论,其后蒙德高梅、冯德、采耳等人的工作使合金管的噪声理论逐步完善.目前合金管中除1/f噪声外其他噪声的机     

测量噪声功率谱作为筛选光电耦合器件的方法研究（Ⅱ）

在文献「１」中作者曾提出用测量光电耦合器件噪声功能率谱的方法,筛选光电耦合器件。此 根据低频噪声的幅值。但在实验中发现,由于１／ｆ、ｇ－ｒ和爆裂噪声三者之间相关性较弱,在剔除掉１／ｆ噪声值较大的器件后,ｇ－ｒ噪声和爆裂噪声较大的器件却可能未被易除。     

冷阴极技术及其在大功率真空电子器件中的应用

场致发射阴极作为重要的电子源之一,在真空电子器件的发展进程中扮演了重要的角色。在与固态器件的竞争中,真空电子器件朝大功率高频方向持续发展,场致发射阴极的应用使其在器件尺寸、可靠性、功耗和工作频率等方面具备了较大的改进空间。本文综述了近年来大电流场致发射阴极技术进展,特别介绍了碳纳米管场致发射阴极的发展。试验表明在直流测试条件下,该类型场致发射阴极发射电流密度已可达到A/cm2量级,且可以实现长寿命高稳定发射,未来在场致发射阴极微波放大器、自由电子激光器和新型中子源等方面将有广泛的应用前景。     

Low-frequency noise study in electron devices: review and update

Low-frequency noise or flicker noise has been found in many systems and has become a hot research topic for more than eight decades. It was believed that there exists a common origin of this kind of noise for different systems. The common origin theories were shook as more experiments on electron devices were conducted. For electronic system, it is easier to produce samples with different noise behaviors via different fabrication processes, measurement conditions such as temperature, stressing, biasing etc. More and more studies suggest that if there is a common regime for the low-frequency noise, it must be mathematical rather than physical ones. These mathematical processes give rise to 1/f spectrum could be due to the distribution of time constant in spatial or energy-wise and the non-linear transformation of Gaussian signal. This paper presents a historical review on the development of low-frequency noise study in electron devices and the recent progresses in the understanding and modeling are updated.     

Impact of advanced processing modules on the low-frequency noise performance of deep-submicron CMOS technologies

Fundamental studies related to the low-frequency (LF) noise performance in semiconductors started more than 40 years ago. In 1957, McWhorter published the first model for the 1/f noise in semiconductors, which is still in use. Whereas for many decades LF noise studies were mainly of fundamental and theoretical interests, in recent years, LF noise characterisation has become a very valuable diagnostic technique for the development of semiconductor materials and devices. Especially, the use of noise characterisation as a tool for reliability predictions has triggered the semiconductor engineering society. Not only the silicon starting material, but also many of the used process modules have a strong impact on the noise performance. This trend is becoming even more pronounced for the advanced deep-submicron technologies. For analog applications of scaled technologies, LF noise may even act as a showstopper. This review, therefore, focuses on the impact of advanced processing on the low-frequency noise behaviour. Both front- and back-end process modules are discussed.     

基于低频电噪声的光电耦合器可靠性筛选方法研究

低频电噪声是表征电子器件质量和可靠性的敏感参数,通过测试低频噪声,可以快速、无损地实现光耦器件的可靠性评估。通过开展可靠性老化对光电耦合器低频噪声特性影响的试验研究,提出基于低频段宽频带噪声参数的光电耦合器可靠性筛选方法,并将可靠性筛选结果与点频噪声筛选方法结果进行对比分析。结果表明,与点频噪声参数等现有方法相比,宽频带噪声参数可以更灵敏和准确地表征器件可靠性,同时计算简便,基于宽频带噪声参数的光电耦合器可靠性筛选方法可以实现更为准确合理的可靠性分类筛选。     

A Monte Carlo investigation of multiplication noise in thin p+-i-n+ GaAs avalanche photodiodes

A Monte Carlo (MC) model has been used to estimate the excess noise factor in thin p⁺-i-n⁺ GaAs avalanche photodiodes (APD's). Multiplication initiated both by pure electron and hole injection is studied for different lengths of multiplication region and for a range of electric fields. In each ease a reduction in excess noise factor is observed as the multiplication length decreases, in good agreement with recent experimental measurements. This low noise behavior results from the higher operating electric field needed in short devices, which causes the probability distribution function for both electron and hole ionization path lengths to change from the conventionally assumed exponential shape and to exhibit a strong dead space effect. In turn this reduces the probability of higher order ionization events and narrows the probability distribution for multiplication. In addition, our simulations suggest that fur a given overall multiplication, electron initiated multiplication in short devices has inherently reduced noise, despite the higher feedback from hole ionization, compared to long devices     

Optimal low-frequency noise criteria used as a reliability test for BJTs and experimental results

Two basic problems in the application of noise criteria to reliability testing are considered. First, the need to look at all noise mechanisms rather than noise at a specific frequency is emphasized, and noise criteria using both 1/f noise and g−r noise are established. Second, the physical mechanisms which explain the low noise level of some failed devices are discussed, and the optimal noise threshold levels are found for minimum error during reliability testing.Reliability testing results for 1000 BJTs (3DG6) show that the failure rate of devices which initially exhibit high noise is about 2–3 times higher than for devices which initially have low noise. This means that the life expectancy of BJTs with a low noise level (using optimal noise criteria) is increased by a factor of 1.5–2.5; thus, noise measurements could be a useful reliability screen classification method for BJTs.     

光电探测器的电噪声及其应用

电噪声检测方法正在成为一种无损的电子器件可靠性表征手段,而人们对其在光电探测器方面应用的研究还较少.本文在总结光电探测器电噪声类型及产生机理的基础上,分析了光电探测器与电噪声相关的各项性能参数.电噪声不仅是影响光电探测器性能的重要物理量,而且与光电探测器材料缺陷、界面缺陷及深能级陷阱存在相关性.构造的适当噪声参量可以表征光电探测器中的上述缺陷.与电噪声相关的缺陷往往是导致器件失效的因素,借鉴电噪声用于金属-氧化物-半导体场效应晶体管质量和可靠性表征的方法,本文提出了电噪声在表征光电探测器质量和可靠性方面的应用.     

An improvement on noise criterion used as a reliability screening parameter for BJTS and experimental results

It has been reported that after a lifetest not all rejected devices initially exhibit an excess low frequency noise, so that the regular noise criterion using initial noise level measured before a lifetest is insufficient in the industrial application to reliability screening. An improved method used for initial discarding of faulty bipolar junction transistors on the basis of the initial noise before the lifetest and the noise variation after the conventional reliability screening test has been suggested [Yisong Dai, Microelectron. Reliab. 33, 2207–2215 (1993)]. In this paper we report the theoretical analysis and experimental results, which demonstrate that this refined approach is more effective for reliability screening of devices exhibiting long-term parameter drift failure.