量子点结构和量子点激光器

简述了量子点结构和最子点激光器的目前发展情况，例举了量子点激光器的典型应用。阐述了对晶格失配系统，外延生长量子点最佳方法是应用Ｓ－Ｋ机理的自组织生长。     

低阈值量子结构激光器的优化结构设计

针对低阈值半导体量子结构激光器（简称量子结构激光器）,包括量子阱、量子线和量子点结构,给出了一个完整简便的方法用以优化设计最低阈值条件所需要的有源区结构。以对数形式给出了量子结构激光器材料增益和注入载流子浓度的关系,并且以ＩｎＧａＡｓ（Ｐ）／ＩｎＰ量子阱激光器和ＩｎＡｓ／ＧａＡｓ自组装量子点结构激光器为例,分别计算了为得到最低阈值电流所需要的量子阱阱数和自组装量子点的面密度以及激光器的腔长。     

量子点激光器研究进展综述

本文综述了量子点激光器的研究进展。介绍了量子点激光器的结构原理、生长及其优化；对量子点激光器光电特性从实验和建立模型进行描述；给出以速率方程描述的量子点激光器的动态特性如光增益均匀展宽、激射光谱控制、激发态迁移等；最后展望了量子点激光器的研究方向。     

量子点及其量子点激光器

本文介绍了零维量子阱结构的量子点生长以及使用这种量子点制作量子点激光器的研究现状。     

半导体量子点激光器的发展

本文综述了半导体量子点激光器的发展和研究现状，并简单介绍了量子点材料的自组装生长，量子点在其他光电子器件上的应用及其发展趋势。     

量子点及其量子点激光器

本介绍了零维量子阱结构的量子点生长以及使用这种量子点制作量子点激光器的研究现状。     

应变自组装InAlAs量子点材料和红光量子点激光器

通过提高量子点材料的质量和优化量子点激光器材料的结构 ,研制出高质量的应变自组装 In Al As/Al Ga As/Ga As量子点材料和低温连续激射的红光量子点激光器。器件性能达到国际同类研究的最好水平     

国内外光通信光源技术新进展

目前，光通信正在向高速、大容量、宽带宽、长距离、低成本方向迅速发展。光通信的关键器件——光源已取得很大进展，不仅第三代高速宽带的应变层量子阱激光器、垂直腔面发射激光器和光纤激光器取得重大进展，一些新型光源，如量子点激光器、量子级联激光器、光子晶体激光器和微碟激光器等也随着光通信应用的需求取得重大进展。     

InAs/GaAs自组织量子点激发态的激射

将覆盖层引入生长停顿的量子点结构作为激光器有源区来研究量子点激光器受激发射机制 .由于强烈的能带填充效应 ,光致发光谱和电致发光谱中观察到对应于量子点激发态跃迁的谱峰 ,大激发时其强度超过基态跃迁对应的谱峰 .最后激发态跃迁达到阈值条件 ,激射能量比结构相似但不含量子点的激光器低 ,表明量子点激光器中首先实现受激发射是量子点的激发态     

量子点激光器

主要介绍了量子点激光器的产生、量子点的生长制作、激光器基本结构和性能、最新进展和未来发展要解决的问题。     

Advances in self-assembled semiconductor quantum dot lasers

In the past 20 years the semiconductor laser has become a key device in optical electronics because of its pure output spectrum and high quantum efficiency. As the capabilities of laser diodes have grown, so has the range of applications contemplated for them. A great success in semiconductor lasers has been brought by the ability to artificially structure new materials on an atomic scale by using advanced crystal growth methods such as MBE and MOVPE. The laser performance successes gained using quantum wells in optoelectronic devices can be extended by adopting quantum wire and quantum dot structures. There have been several reports of successful lasing action in semiconductor dot structures within the past few years. In this article I will briefly review the recent progress in the development of quantum dot lasers.     

量子点激光器瞬态响应及调制特性分析

基于二能级系统建立量子点激光器的载流子-光子速率方程模型,分析量子点激光器的瞬态响应和调制特性,获得其动态特性.同时分析了注入电流对量子点激光器输出光子密度的影响,随着注入电流的增大,激光器光电延迟时间缩短,弛豫过程缩短,弛豫振荡频率增大,且输出光子峰值和稳态功率增加,适当增加注入电流可拓宽量子点激光器调制带宽.通过小信号调制分析,发现量子点激光器上限调制频率比普通激光器高一个数量级,证明了其具有良好的高频调制特性.     

量子结构激光器能量本征值计算及增益特性分析

将量子结构中的边界条件应用于薛定谔方程的求解,计算了量子结构中粒子的能量本征值及量子结构激光器的态密度和增益,比较了量子点、量子线、量子阱激光器的波长-增益特性,从能量本征值角度探讨了各种量子结构特性差异的根本原因,阐述了量子点激光器的实现问题,分析结果表明,量子点激光器具有高增益、高单色性的特点.     

Quantum Dot Lasers Fabricated by Self-organized Growth

Quantum dot lasers have excellent characteristics such as timperature stability of threshold current and ultra-high material gain.Quantum dot structures fabricated by self-organized growth have high crystalline perfection,high quantum yield of radiative recombination and high size homogeneity .Main advantages and operating properties of quantum dot alsers fabricated by self-organized growth are briefly introduced.     

半导体量子点的电子结构

半导体量子点是一种具有显著量子尺寸效应的介观体系。文中从固体能带理论出发，对箱形量子点、球形鼻子点、巨型鼻子点以及磁场中量子点的电子结构进行了讨论。     

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

The advances in lasers, electronic and photonic integrated circuits (EPIC), optical interconnects as well as the modulation techniques allow the present day society to embrace the convenience of broadband, high speed internet and mobile network connectivity. However, the steep increase in energy demand and bandwidth requirement calls for further innovation in ultra-compact EPIC technologies. In the optical domain, advancement in the laser technologies beyond the current quantum well (Qwell) based laser technologies are already taking place and presenting very promising results. Homogeneously grown quantum dot (Qdot) lasers and optical amplifiers, can serve in the future energy saving information and communication technologies (ICT) as the work-horse for transmitting and amplifying information through optical fiber. The encouraging results in the zero-dimensional (0D) structures emitting at 980 nm, in the form of vertical cavity surface emitting laser (VCSEL), are already operational at low threshold current density and capable of 40 Gbps error-free transmission at 108 fJ/bit. Subsequent achievements for lasers and amplifiers operating in the O-, C-, L-, U-bands, and beyond will eventually lay the foundation for green ICT. On the hand, the inhomogeneously grown quasi 0D quantum dash (Qdash) lasers are brilliant solutions for potential broadband connectivity in server farms or access network. A single broadband Qdash laser operating in the stimulated emission mode can replace tens of discrete narrow-band lasers in dense wavelength division multiplexing (DWDM) transmission thereby further saving energy, cost and footprint. We herein reviewed the1 progress of both Qdots and Qdash devices, based on the InAs/InGaAlAs/InP and InAs/InGaAsP/InP material systems, from the angles of growth and device performance. In particular, we discussed the progress in lasers, semiconductor optical amplifiers (SOA), mode locked lasers, and superluminescent diodes, which are the building blocks of EPIC and ICT. Alternatively, these optical sources are potential candidates for other multi-disciplinary field applications.     

锗基InAs量子点激光器的腔面失效及再生的研究

围绕锗基InAs量子点激光器,开展了激光器腔面失效及再生的研究.研究并分析了灾变性光学镜面损伤产生的机理及其对激光器腔面的影响,开展了腔面再生研究,发展了一套创新性的腔面再生工艺并实现了失效的锗基InAs量子点激光器的再生.根据锗基InAs量子点激光器材料结构设计腐蚀工艺,通过选择性腐蚀在激光器腔面制备出悬臂结构,采用细针解理使悬臂结构自然解理,获得新的激光器谐振腔面,失效激光器重新工作.对比了激光器失效前和再生后的工作性能,结果表明因灾变性光学镜面损伤而失效的锗基InAs量子点激光器获得全新的谐振腔面,锗基激光器器件性能和失效前相当.     

Effect of quantum dot shape on dynamical dephasing suppression in exciton qubits under applied electric field

We investigate the efficiency of periodic dynamical decoupling of an exciton qubit confined in a self-assembled quantum dot in the presence of an applied electric field. The shape of the quantum dot is found to have a large effect on the excitonic dephasing. It is shown that dynamical suppression of dephasing, through a simple series of equally spaced bit flips, is most efficient for quantum dots that are close to spherical. In addition, compared to the no field case, the presence of an electric field increases the efficiency of the decoupling technique as the quantum dot becomes more oblate. Our calculations show that dephasing can be significantly suppressed in GaAs/AlAs quantum dots suitable for quantum information processing.     

利用ArF准分子激光退火获得小锗量子点的研究

使用ArF准分子激光脉冲对UHV/CVD条件下生长的Ge量子点进行退火处理,获得了底宽为20～25nm的光致量子点(LIQD),远小于退火前的量子点大小.LIQD的密度约为6×1010cm-2.分析表明,在ArF准分子激光脉冲作用下,退火样品只有表面扩散,并没有体扩散.激光脉冲对表面Ge原子的扩散控制导致了Ge量子点形貌发生了巨大的改变.该方法为获得高密度小尺寸的Ge量子点提供了新的途径.采用原子力显微镜对光致量子点的表面形貌进行了研究.