泡沫镍基体用电化学浸渍方法制作的NiOOH／Ni（OH）2电极的研究

研究了泡沫镍基体在电化学浸渍时的各种影响因素和电化学浸渍效率，对制作好的ＮｉＯＯｈ／Ｎｉ（ＯＨ）２电极的初期活性，充卵电性能，快速充电性能和荷电保持性能作了大量实验和理论分析。     

磁控溅射a—Si／Ni多层膜的研究

利用超高真空多靶磁控溅射设备制备ａ－Ｓｉ／Ｎｉ多层膜，经ＸＰＳ和Ｒａｍａｎ谱的分析研究表明；在所取工艺条件下制备的ａ－Ｓｉ／Ｎｉ我层膜为周期性的成份调制结构，以特殊的表面电极结构，讨论了ａ－Ｓｉ／Ｎｉ多层膜的横向光电效应与周期结构参数的关系。     

陶瓷表面Ni-Cu-P金属化工艺的研究

用化学镀Ｎｉ－Ｃｕ－Ｐ合金的方法使陶瓷表面金属化。结果表明：用Ｎｉ－Ｃｕ－Ｐ合金代替贵金属银作为陶瓷元件的电极材料是可行的,其产品的各项技术指标（容量、损耗、结合力、软钎焊性）均达到电极材料的要求。     

用于聚焦型场发射阵列的Ni-SiO2透明电阻薄膜

为用自对准技术制作聚焦型发射阵列（ＦＦＥＡ）的聚焦极，要求ＦＦＦＡ的电阻层能通过光刻用近紫外光。为此提出用共溅射法制作Ｎｉ－ＳｉＯ２金属陶瓷电阻层。研究结果表明，当适当调整Ｎｉ和ＳｉＯ２成份比例，可得到既能满足方阻要求又不妨碍光刻的电阻层。同时对此电阻层的电镜微观形貌，能谱成分分析，方阻及透光率进行了讨论，最后，给出一个利用此电阻层制作场发射聚焦电极的实例。     

镍电极及Cd—Ni电池的贮存和自放电研究

通过充放电曲线、循环伏安曲线和ＸＲＤ物相的测量，研究了镍电极及Ｃｄ－Ｎｉ电池的贮存和自放电性能。     

片式MLC三层端电极工艺技术

我厂研制成片式多层陶瓷电容器三层端电极已有五年多了。其中镍和铅锡镀液、制造工艺、微型电镀设备等全部自行设计，并生产出大量适用于ＳＭＴ，如电子调谐器，厚膜电路、电子手表中用的产品。近期又地该工艺的成熟性进行研究，即电镀后产品的电性能提高，镍和铅锡镀液的维护，片式电阻和电感三层端电极材料研制，使片式元件三层端电极技术系统化。     

基于不同质量比的石墨烯与氢氧化镍电极材料性能分析

通过化学方法合成，寻找具有比电容优于单一材料的复合电极材料。实验方案通过对聚吡咯/石墨烯与氢氧化镍进行不同比例的化学氧化原位聚合，从而得到三元电极复合材料，釆用SEM(场发射扫描电镜分析)和XRD(X－射线衍射分析) 等表征手段对复合材料的结构、形貌进行表征，最后采用电化学工作站测试材料的电化学性能，得出ＰＧ∶Ｎｉ＝８∶２既具有较高的循环稳定性，同时比容量可达91％，能够满足能量储存装置的需要，可用于超级电容器电极材料。     

PZT厚膜拾振器微图形化工艺研究

采用sol-gel方法制备了PZT铁电厚膜，构成了SiO2／Si／SiO2／Ti／Pt／PZT／Ti／Pt形式的拾振器敏感元结构。基于半导体光刻技术，通过干法刻蚀电极和化学湿法刻蚀PZT厚膜等技术，成功地实现了敏感元的微图形化，解决了Pt／Ti下电极刻蚀难、制作的PZT膜形貌不好和上电极容易起壳等问题，为基于PZT厚膜的高性能拾振器的研制打下了良好的基础。     

薄膜磁阻传感器及其应用

利用薄膜工艺和微细加工技术，将ＮｉＦｅ合金或ＮｉＣｏ合金真空蒸镀或溅射在玻璃或石英基片上，制作的磁阻传感器具有广泛的用途。     

万瓦级激光熔敷宽带扫描转镜的研究

研制了万瓦级激光宽带扫描转镜，并作了ＮｉＣｒＳｉＢ／Ａ３钢熔敷试验。采用６－７ｋｗ激光，单道熔敷宽度４５ｍｍ，厚度１ｍｍ。     

Real-Time Management of Faulty Electrodes in Electrical Impedance Tomography

Completely or partially disconnected electrodes are a fairly common occurrence in many electrical impedance tomography (EIT) clinical applications. Several factors can contribute to electrode disconnection: patient movement, perspiration, manipulations by clinical staff, and defective electrode leads or electronics. By corrupting several measurements, faulty electrodes introduce significant image artifacts. In order to properly manage faulty electrodes, it is necessary to: (1) account for invalid data in image reconstruction algorithms and (2) automatically detect faulty electrodes. This paper presents a two-part approach for real-time management of faulty electrodes based on the principle of voltage-current reciprocity. The first part allows accounting for faulty electrodes in EIT image reconstruction without a priori knowledge of which electrodes are at fault. The method properly weights each measurement according to its compliance with the principle of voltage-current reciprocity. Results show that the algorithm is able to automatically determine the valid portion of the data and use it to calculate high-quality images. The second part of the approach allows automatic real-time detection of at least one faulty electrode with 100% sensitivity and two faulty electrodes with 80% sensitivity enabling the clinical staff to fix the problem as soon as possible to minimize data loss.     

Overlap integral factors in integrated optic modulators andswitches

Coplanar strip and complementary coplanar strip electrodes are often used in integrated optical switches and modulators using the optical directional coupler. The field analysis of these electrodes is performed to determine the optimum overlap integral between the optical field and the modulating electromagnetic field. The optimal placement of the electrodes with respect to the optical channel waveguides is presented as a function of electrode width and spacing     

The influence of internal stresses in tungsten-gate electrodes on the degradation of MOSFET characteristics caused by hot carriers

The characteristic degradation of MOSFET's with tungsten-gate electrodes caused by hot carriers is shown to be enhanced by internal stresses in gate electrodes. These stresses introduce strains in silicon substrates under the edges of gate electrodes, which increases the number of surface states at the Si-SiO2interfaces. As a result, these internal stresses enhance the degradation of MOSFET characteristics due to hot carriers. A new technique for reducing the strains induced in the region under the gate electrodes is presented. With this technique (namely, annealing before patterning tungsten films for gate electrodes), the degradation of tungsten-gate MOSFET's can be decreased to a level compatible with that of conventional silicon gate MOSFET's.     

Voltage-induced optical waveguide modulator in lithium niobate

A type of optical modulator first proposed by D.J. Channin (1971) in which an optical waveguide is induced in an electrooptic substrate by applying voltage between two parallel coplanar electrodes is reinvestigated. It is found that such devices will work for voltages much smaller than those used by Channin. The devices are fabricated with much smaller gaps between the electrodes and have an optical buffer layer to isolate the optical field from the electrodes. The theory of operation is developed and the device is modeled mathematically. The theory predicts that the optical field distributions of the modes of these devices become more highly confined with increasing voltage     

Calculation of the characteristics of surface-acoustic-wave devices in the presence of reflections due to the mechanical load in the electrode region

A numerical method is proposed for calculation of surface-acoustic-wave devices with electrodes of an arbitrary polarity and width. The method is based on Ingebrigtsen’s approximation for the effective permittivity of a piezoelectric substrate and involves an additional mechanism of wave reflection by electrodes. This mechanism is related to the difference of the mechanical properties of the electrode region and of the free surface between the electrodes. The proposed method is self-consistent and automatically takes into account the wave reflection resulting from the electric regeneration of waves. The application of this method is illustrated in the calculation of the amplitude-frequency characteristics of a high-frequency delay line consisting of two unidirectional transducers.     

Fascicle-selectivity of an intraneural stimulation electrode in the rabbit sciatic nerve

The current literature contains extensive research on peripheral nerve interfaces, including both extraneural and intrafascicular electrodes. Interfascicular electrodes, which are in-between these two with respect to nerve fiber proximity have, however, received little interest. In this proof-of-concept study, an interfascicular electrode was designed to be implanted in the sciatic nerve and activate the tibial and peroneal nerves selectively of each other, and it was tested in acute experiments on nine anaesthetized rabbits. The electrode was inserted without difficulty between the fascicles using blunt glass tools, which could easily penetrate the epineurium but not the perineurium. Selective activation of all tibial and peroneal nerves in the nine animals was achieved with high selectivity (? = 0.98 ± 0.02). Interfascicular electrodes could provide an interesting addition to the bulk of peripheral nerve interfaces available for neural prosthetic devices. Since interfascicular electrodes can be inserted without fully freeing the nerve and have the advantage of not confining the nerve to a limited space, they could, e.g., be an alternative to extraneural electrodes in locations where such surgery is complicated due to blood vessels or fatty tissue. Further studies are, however, necessary to develop biocompatible electrodes and test their stability and safety in chronic experiments.     

Sensitivity Analysis of Depth EEG Electrodes to Dipolar Electric Sources

This paper presents a theoretical evaluation of the influence of the geometry and dimensions of depth EEG electrodes upon their sensitivity to equivalent current dipole sources. The electrodes we consider here are cylindrical and coaxial. Results obtained from a solution of the current density distribution for a pair of electrically stimulated electrodes are first presented. They are then used with the reciprocity theorem to assess the sensitivity of the electrodes. The potential differences between a pair of real electrodes, calculated for various positions of a dipole source, are compared to the one calculated for a pair of point electrodes of zero dimensions in the same conditions. It is shown that discrepancies of the order of 25-30 percent and 10-15 percent are, respectively, found for near and far sources between the potential differences predicted for the real electrodes and the point electrodes. These findings may be of further interest to improve models of electric potential distribution in the brain where the electrodes are considered as point electrodes.     

The electrode system in impedance-based ventilation measurement

In this paper, we determined which electrode types, sizes, and locations were best suited for impedance-based ventilation measurement. Optimal electrodes provide high signal-to-(motion) artifact ratio (SAR) and reliability by meeting the following criteria: 1) low baseline impedance, 2) high adhesion, 3) good physical stability, 4) large effective area, 5) thin with high flexibility. We compared 14 electrodes from two main groups: adhesive-gel and conductive rubber electrodes. Adhesive-gel electrodes are easy to apply, make good body contact, and do not slip during the course of an experiment. We found that higher SAR's are obtained when electrode area is increased by connecting several small electrodes together rather than by using a single electrode with a larger area. The peak SAR is achieved when two electrode arrays (area = 70 cm2) are centered at the 8th intercostal spaces on opposite midaxillary lines. To determine the optimal electrode locations, we placed 32 electrodes on the trunk and recorded impedance between 171 electrode combinations on ten normal adult subjects. Based on these data, we conclude that the SAR's are highest when one electrode is placed on the midpoint between the left and right second intercostal spaces on the sternum and the other electrode is placed in the opposite position on the back.     

Influence of source/drain electrodes on external quantum efficiency of ambipolar organic light-emitting transistors

The influence of source/drain (S/D) electrodes on the external quantum efficiency (EQE) of ambipolar organic light-emitting transistors (OLETs) based on fluorene-type polymer films is investigated. The electrical properties and the maximum EQE value of the device with indium tin oxide (ITO) S/D electrodes are almost the same as those of the device with Ag S/D electrodes. A relatively high EQE of 1% is achieved regardless of the emission site for the OLET with ITO. In contrast, the EQE of the OLET with Ag is low when the emission occurs close to the S/D electrodes. The maximum EQE of the device with Ag is obtained when the emission is observed in the middle of the channel. It is found that the exciton quenching by Ag electrodes significantly influences the low EQE of the OLET with Ag electrodes. The achievement of high EQE regardless of the emission site is attributable to both better carrier injection and lower exciton quenching at the interface of S/D electrodes for the OLET with ITO.     

基于锆钛酸铅的低电压驱动MEMS电场传感器研究

该文提出一种基于锆钛酸铅(PZT)的低电压驱动微机电系统(MEMS)电场传感器。该传感器基于电荷感应原理,其敏感单元由固定电极和可动电极构成。固定电极与可动电极均为感应电极,同时两者又是屏蔽电极。在PZT压电材料的驱动下,可动电极产生垂直于敏感芯片基底的振动并且与固定电极形成交互屏蔽,当存在待测电场时,分别在可动电极和固定电极上产生相位差为180°的感应电流信号。该文进行了传感器的设计和有限元仿真,提出敏感微结构的加工工艺流程,突破了基于PZT压电材料的可动电极MEMS工艺兼容制备技术,完成了敏感芯片制备,对传感器进行了性能测试。该传感器具有工作电压低的突出优点。实验测试表明,在0～50 kV/m电场强度范围内,采用1 V交流驱动电压,电场传感器的灵敏度为0.292 mV/(kV/m),线性度为2.89%。