共查询到20条相似文献,搜索用时 109 毫秒
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介绍了在纳米晶浮栅存储器数据保持特性方面的研究工作,重点介绍了纳米晶材料的选择与制备和遂穿介质层工程。研究证明,金属纳米晶浮栅存储器比半导体纳米晶浮栅存储器具有更好的电荷保持特性。并且金属纳米晶制备方法简单,通过电子束蒸发热退火的方法就能够得到质量较好的金属纳米晶,密度约4×1011cm-2,纳米晶尺寸约6~7nm。实验证明,高介电常数隧穿介质能够明显改善浮栅存储器的电荷保持特性,所以在引入金属纳米晶和高介电常数遂穿介质之后,纳米晶浮栅存储器可能成为下一代非挥发性存储器的候选者。 相似文献
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快速退火纳米晶化法是目前常用的金属纳米晶制备方法,但其后续600~900℃高温退火会降低器件的电学特性和可靠性。本文提出了热预算低的金属纳米晶制备的新方法—沉积过程中的同步金属薄膜原位纳米晶化法,可以省掉后续单独的退火处理工艺,使金属薄膜同步产生纳米晶化,降低工艺热功耗及简化工艺,从而有效地改善上述薄膜沉积后退火纳米晶化法的不足。在不同衬底温度(250~325 ?C)下,利用同步纳米晶化法制备镍纳米晶存储器。随着生长温度的增加,其存储窗口先增加到最大值再降低。衬底温度为300 ?C时,其存储窗口(2.78 V)最大。与快速热退火法镍纳米晶存储器相比较,同步纳米晶化法制备镍纳米晶存储器具有更强的电荷存储能力。另外,研究了不同操作电压和脉冲时间下器件的平带电压偏移量,当操作电压增加到±10 V时出现了较大的平带电压偏移量,这表明器件发生了大量的载流子(电子和空穴)注入现象。最后,模拟了金属纳米晶存储器的载流子(电子和空穴)注入和释放过程。 相似文献
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An Ultrafast Nonvolatile Memory with Low Operation Voltage for High-Speed and Low-Power Applications
Zhi-Cheng Zhang Yuan Li Jiaqiang Li Xu-Dong Chen Bei-Wei Yao Mei-Xi Yu Tong-Bu Lu Jin Zhang 《Advanced functional materials》2021,31(28):2102571
Memory plays a vital role in modern information society. High-speed and low-power nonvolatile memory is urgently demanded in the era of big data. However, ultrafast nonvolatile memory with nanosecond-timescale operation speed and long-term retention is still unavailable. Herein, an ultrafast nonvolatile memory based on van der Waals heterostructure is proposed, where a charge-trapping material, graphdiyne (GDY), serves as the charge-trapping layer. With the band-engineered heterostructure and excellent charge-trapping capability of GDY, charges are directly injected into the GDY layer and are persistently captured by the trapping sites in GDY, which result in an ultrafast writing speed (8 ns), a low operation voltage (30 mV), and a long retention time (over 104 s). Moreover, a high on/off ratio of 106 is demonstrated by this memory, which enables the achievement of multibit storage with 6 discrete storage levels. This device fills the blank of ultrafast nonvolatile memory technology, which makes it a promising candidate for next-generation high-speed and low-power-consumption nonvolatile memory. 相似文献
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Low‐Power Nonvolatile Charge Storage Memory Based on MoS2 and an Ultrathin Polymer Tunneling Dielectric
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Myung Hun Woo Byung Chul Jang Junhwan Choi Khang June Lee Gwang Hyuk Shin Hyejeong Seong Sung Gap Im Sung‐Yool Choi 《Advanced functional materials》2017,27(43)
Low‐power, nonvolatile memory is an essential electronic component to store and process the unprecedented data flood arising from the oncoming Internet of Things era. Molybdenum disulfide (MoS2) is a 2D material that is increasingly regarded as a promising semiconductor material in electronic device applications because of its unique physical characteristics. However, dielectric formation of an ultrathin low‐k tunneling on the dangling bond‐free surface of MoS2 is a challenging task. Here, MoS2‐based low‐power nonvolatile charge storage memory devices are reported with a poly(1,3,5‐trimethyl‐1,3,5‐trivinyl cyclotrisiloxane) (pV3D3) tunneling dielectric layer formed via a solvent‐free initiated chemical vapor deposition (iCVD) process. The surface‐growing polymerization and low‐temperature nature of the iCVD process enable the conformal growing of low‐k (≈2.2) pV3D3 insulating films on MoS2. The fabricated memory devices exhibit a tunable memory window with high on/off ratio (≈106), excellent retention times of 105 s with an extrapolated time of possibly years, and an excellent cycling endurance of more than 103 cycles, which are much higher than those reported previously for MoS2‐based memory devices. By leveraging the inherent flexibility of both MoS2 and polymer dielectric films, this research presents an important milestone in the development of low‐power flexible nonvolatile memory devices. 相似文献
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Hyunjun Sim Dooho Choi Dongsoo Lee Sunae Seo Myong-Jae Lee In-Kyeong Yoo Hyunsang Hwang 《Electron Device Letters, IEEE》2005,26(5):292-294
The resistance switching characteristics of polycrystalline Nb/sub 2/O/sub 5/ film prepared by pulsed-laser deposition (PLD) were investigated for nonvolatile memory application. Reversible resistance-switching behavior from a high resistance state to a lower state was observed by voltage stress with current compliance. The reproducible resistance-switching cycles were observed and the resistance ratio was as high as 50-100 times. The resistance switching was observed under voltage pulse as short as 10 ns. The estimated retention lifetime at 85/spl deg/C was sufficiently longer than ten years. Considering its excellent electrical and reliability characteristics, Nb/sub 2/O/sub 5/ shows strong promise for future nonvolatile memory applications. 相似文献
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High Performance Flexible Nonvolatile Memory Based on Vertical Organic Thin Film Transistor
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Flexible floating‐gate organic transistor memory (FGOTM) is a potential candidate for emerging memory technologies. Unfortunately, conventional planar FGOTM suffers from weak driving ability and insufficient mechanical flexibility, which limits its commercial application. In this work, a novel flexible vertical FGOTM (VFGOTM) is reported. Benefitting from new vertical architecture, VFGOTM provides ultrashort channel length to afford an extremely high current density. Meanwhile, VFGOTM devices exhibit excellent memory performance and outstanding retention property. The memory properties of VFGOTM devices are comparable or even better than traditional planar FGOTM and much better than the reported organic nonvolatile memory with vertical transistor structures. More importantly, organic nonvolatile memory with vertical transistor structures is investigated for the first time on a flexible substrate. The results show that VFGOTM architecture allows vertical current flow across the channel layer to effectively eliminate the effect of mechanical bending during current transport, which significantly improves the mechanical stability of the flexible VFGOTM. Hence, with a combination of excellent driving ability, memory performance, and mechanical stability, VFGOTM devices meet the practical requirements for high performance memory applications, which have great potential for the application in a wide range of flexible and wearable electronics. 相似文献
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《Electron Device Letters, IEEE》2009,30(7):703-705
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In this study, we fabricated nonvolatile organic memory devices using a mixture of polyimide (PI) and 6-phenyl-C61 butyric acid methyl ester (PCBM) (denoted as PI:PCBM) as an active memory material with Al/PI:PCBM/Al structure. Upon increasing the temperature from room temperature to 470 K, we demonstrated the good nonvolatile memory properties of our devices in terms of the distribution of ON and OFF state currents, the threshold voltage from OFF state to ON state transition, the retention, and the endurance. Our organic memory devices exhibited an excellent ON/OFF ratio (ION/IOFF > 103) through more than 200 ON/OFF switching cycles and maintained ON/OFF states for longer than 104 s without showing any serious degradation under measurement temperatures up to 470 K. We also confirmed the structural robustness under thermal stress through transmission electron microscopy cross-sectional images of the active layer after a retention test at 470 K for 104 s. This study demonstrates that the operation of PI:PCBM organic memory devices could be controlled at high temperatures and that the structure of our memory devices was maintained during thermal stress. These results may enable the use of nonvolatile organic memory devices in high temperature environments. 相似文献
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Angelika Balliou Dimitrios Skarlatos Giorgos Papadimitropoulos Nikolaos Z. Vouroutzis Nikos Boukos Nikos Glezos 《Advanced functional materials》2019,29(51)
The metal oxide heterostructures market is exponentially growing, adhering to the trend of achieving fabrication versatility on a vast range of nonconventional electromagnetic and optical properties. A high degree of substrate tolerance and solution‐phase growth potential promise low‐cost flexible electronics and silicon‐based process compatibility. A molecule‐based complex oxide nanostructured stack integrated in an electro‐optically operable nonvolatile two‐terminal capacitive memory element is proposed. The cell demonstrates a remarkably high > 7 V memory window and write–read times down to 10 ns, promising for reliable high‐speed storage. Molecular orbital occupancy through broadband optical stimulus enables simultaneous phononic addressing and boosts the written information amount by up to 37%, achieving 10+ years storage duration. The resulting nonvolatile memories are the first‐documented complementary metal oxide semiconductor (CMOS)‐compatible long‐term‐retention molecular capacitive cell of its kind, implementing inherent structure‐emerging heat management. Great potential emerges for numerous energy‐inspired innovations, enabling functional oxide–molecular hybrids exploitation as high‐end nonvolatile memory products. 相似文献
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《Electron Devices, IEEE Transactions on》2009,56(4):696-699
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The resistive random access memory (RRAM) device has been widely studied due to its excellent memory characteristics and great application potential in different fields. In this paper, resistive switching materials, switching mechanism, and memory characteristics of RRAM are discussed. Recent research progress of RRAM in high-density storage and nonvolatile logic application are addressed. Technological trends are also discussed. 相似文献
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Binjian Zeng Chen Liu Siwei Dai Pingan Zhou Keyu Bao Shuaizhi Zheng Qiangxiang Peng Jinjuan Xiang Jianfeng Gao Jie Zhao Min Liao Yichun Zhou 《Advanced functional materials》2021,31(17):2011077
The ferroelectric field-effect transistor (FeFET) is a promising memory technology due to its high switching speed, low power consumption, and high capacity. Since the recent discovery of ferroelectricity in Si-doped HfO2 thin films, HfO2-based materials have received considerable interest for the development of FeFET, particularly considering their excellent complementary metal-oxide-semiconductor (CMOS) compatibility, relatively low permittivity, and high coercive field. However, the multilevel capability is limited by the device size, and multidomain switching tends to vanish when the channel length of the HfO2-based FeFET approaches 30 nm. Here, multiple nonvolatile memory states are realized by tuning the electric field gradient across the Hf0.5Zr0.5O2 (HZO) ferroelectric thin film along the channel direction of FeFET. The multi-step domain switching can be readily and directionally controlled in the HZO-FeFETs, with a very low variation. Moreover, multiple nonvolatile memory states or multi-step domain switching can be effectively controlled in the FeFETs with a channel length less than 20 nm. This study suggests the possibility to implement multilevel memory operations and mimic biological synapse functions in highly scaled HfO2-based FeFETs. 相似文献