一款具有新颖的采样保持电路应用于脉冲式超宽带技术的欠采样型模数转换器

本文提出了一款基于CMOS 0.13um,具有新颖的采样保持电路,应用于脉冲式超宽带接收机的欠采样型模数转换器.本文主要的难点在于实现拥有远远高于奈奎斯特频率的输入信号的欠采样型模数转换器。根据我们的了解,本文是当今第二次提出当采样时钟大约在1.056GHz,输入信号超过4GHz的欠采样型模数转换器。电路设计中,我们提出了一款新颖的采样保持电路,解决了信号幅度的衰减和高频输入信号线性度的问题。一款使用零静态功耗动态失调校准比较器被进一步优化,实现了失调,速度以及功耗的要求。测试结果显示,当采样频率为1.056GHz,输入信号高达4.2GHz时,SFDR 为30.1dB。不包括缓冲器,ADC的功耗为30mW,芯片面积为0.6mm2.ADC的FoM是3.75pJ.     

2GS/s 6-bit 自校准快闪ADC

A single channel 2-GS/s 6-bit ADC with cascade resistive averaging and self foreground calibration is demonstrated in 0.18-μ m CMOS. The calibration method based on DAC trimming improves the linearity and dynamic performance further. The peak DNL and INL are measured as 0.34 and 0.22 LSB, respectively. The SNDR and SFDR have achieved 36.5 and 45.9 dB, respectively, with 1.22 MHz input signal and 2 GS/s. The proposed ADC, including on-chip track-and-hold amplifiers and clock buffers, consumes 570 mW from a single 1.8 V supply while operating at 2 GS/s.     

A 2-GS/s 6-bit self-calibrated flash ADC

A single channel 2-GS/s 6-bit ADC with cascade resistive averaging and self foreground calibration is demonstrated in 0.18-μm CMOS.The calibration method based on DAC trimming improves the linearity and dynamic performance further.The peak DNL and INL are measured as 0.34 and 0.22 LSB,respectively.The SNDR and SFDR have achieved 36.5 and 45.9 dB,respectively,with 1.22 MHz input signal and 2 GS/s.The proposed ADC,including on-chip track-and-hold amplifiers and clock buffers,consumes 570 mW from a single 1...     

一种采用改进放大器的12位40兆采样率的流水线模数转换器

本文设计实现了一种采用改进放大器的12位40兆采样率的流水线模数转换器。基于该模数转换器的结构,本文分析了影响模数转换器的精度的放大器非理想因素,并提出了针对放大器的补偿技术。该技术消除了增益提高技术和开关电容共模反馈结构对放大器的带宽和相位裕度的限制。整个模数转换器使用0.35μm标准CMOS工艺设计制作。测试结果表明,该模数转换器能够在2V输入范围内,40兆赫兹采样时钟下实现60.5dB信噪失真比和74.5dB的无杂散动态范围。     

A 12-bit,40-Ms/s pipelined ADC with an improved operational amplifier

This paper proposes a 12-bit,40-Ms/s pipelined analog-to-digital converter(ADC) with an improved high-gain and wide-bandwidth operational amplifier(opamp).Based on the architecture of the proposed ADC,the non-ideal factors of opamps are first analyzed,which have the significant impact on the ADC's resolution.Then,the compensation techniques of the ADC's opamp are presented to restrain the negative effect introduced by the gainboosting technique and switched-capacitor common-mode-feedback structure.After analysis and optimization,the ADC implemented in a 0.35μm standard CMOS process shows a maximum signal-to-noise distortion ratio of 60.5 dB and a spurious-free dynamic range of 74.5 dB,respectively,at a 40 MHz sample clock with over 2 Vpp input range.     

5-bit 1.25GS/s Flash ADC的设计及数字后台校正的实现

-本文设计了一款高速的全并行模数转换器,并基于Volterra级数设计了校正反模型,对此款ADC进行了数字后台校正。首先,基于0.18 CMOS设计了一个采样频率为1.25GHz分辨率为5位的Flash ADC,该ADC采用分布式采保结构对输入信号进行量化。同时,基于Volterra级数,实现了数字后台校正模型的设计,并基于此模型对所设计的高速Flash ADC的非线性进行了补偿和校正。仿真结果表明,ADC的输出信号谐波得到了很好的抑制,当输入信号频率为117.1M时,有效位数达到了4.83bit;当输入信号接近奈奎斯特频率时,有效位数达到了4.74bit。     

用于14位210 MS/s电荷域ADC的采样保持前端电路

该文提出一种用于电荷域流水线模数转换器(ADC)的高精度输入共模电平不敏感采样保持前端电路。该采样保持电路可对电荷域流水线ADC中由输入共模电平误差引起的共模电荷误差进行补偿。所提出的高精度输入共模电平不敏感采样保持电路被运用于一款14位210 MS/s电荷域ADC中,并在1P6M 0.18 μm CMOS工艺下实现。测试结果显示,该14位ADC电路在210 MS/s条件下对于30.1 MHz单音正弦输入信号得到的无杂散动态范围为85.4 dBc,信噪比为71.5 dBFS,而ADC内核功耗仅为205 mW,面积为3.2 mm²。

     

一种具有比较器失调后台校准的无采样保持放大器型14位100MS/s流水线模数转换器

本文实现了一种不具有前端采样保持放大器的14位100MS/s的流水线模数转换器。为了提高第一级采样网络的匹配性,本文提出了一种用于降低第一级子模数转换器的后台失调校准电路。后台失调校准电路保证了比较器总失调不超过内建冗余结构的校准范围。所提出的模数转换器采用0.18um CMOS工艺进行流片,面积为12mm2。在1.8V电源电压下,模数转换器功耗为237mW。测量结果显示,在100MHz采样频率、30.1MHz输入频率下,模数转换器的信号与噪声失真比（SNDR）为71dB,无杂散动态范围（SFDR）为85.4dB,最大微分非线性（DNL）为0.22LSB,最大积分非线性（INL）为1.4LSB。     

A 25-GS/s 6-bit time-interleaved SAR ADC with design-for-test memory in 40-nm low-leakage CMOS

This paper presents a 25-GS/s 6-bit time-interleaved (TI) SAR ADC in a 40-nm CMOS low-leakage (LL) process. The prototype utilizes 4 × 12 hierarchical sampling architecture to reduce the complexity of track-and-hold circuits and the timing skew calibration. The single-channel SAR ADC adopts asynchronous processing with two alternate comparators. A partially active reference voltage buffer is designed to reduce the power consumption. The method based on sinusoidal signal approximation is employed to calibrate timing skew errors. To characterize the ultra-high-speed ADC, an on-chip design-for-test memory is designed. At 25 GS/s, the ADC achieves the SNDR of 32.18 dB for low input frequency and 27.28 dB for Nyquist frequency. The chip consumes 800 mW and occupies 1.3 × 2.6 mm², including the TI ADC core and memory.     

A low-power 6-bit MOS CML flash ADC with a novel multi-segment encoder for UWB applications

This paper introduces a novel structure of multi-segment encoder with MOS current mode logic (MCML) multiplexers. As the benefit, the more segments would lead higher performance speed. Moreover, in the high-resolution flash analog-to-digital converter (ADC), the encoder structure will be simpler compared to conventional ones. As the simplest type, the two-segment encoder is used in this paper. By assistance of some MCML multiplexers, each segment encodes the most significant bits (MSBs) and the least significant bits (LSBs) separately. The figure of merit (FOM) of the proposed ADC is 0.225 pJ/conversion-step.     

基于90nm CMOS工艺的2GS/s 8-bit 折叠插值ADC的设计*

本文基于90nm CMOS工艺设计了一个单通道 2GSPS, 8-bit 折叠插值模数转换器。本设计采用折叠级联结构,通过在折叠电路间增加级间采样保持器的方法增加量化时间。电路中采用了数字前台辅助校正技术以提高信号的线性度。后仿结果表明,在奈奎斯特采样频率,该ADC的微分非线性DNL<±0.3LSB,积分非线性INL<±0.25LSB,有效位数达到7.338比特。包括焊盘在内的整体芯片面积为880×880 μm2。电路在1.2V 电源电压下功耗为210mW.     

A 10-bit 80-MS/s opamp-sharing pipelined ADC with a switch-embedded dual-input MDAC

A 10-bit 80-MS/s opamp-sharing pipelined ADC is implemented in a 0.18-μm CMOS.An opampsharing MDAC with a switch-embedded dual-input opamp is proposed to eliminate the non-resetting and successive-stage crosstalk problems observed in the conventional opamp-sharing technique.The ADC achieves a peak SNDR of 60.1 dB(ENOB = 9.69 bits) and a peak SFDR of 76 dB,while maintaining more than 9.6 ENOB for the full Nyquist input bandwidth.The core area of the ADC is 1.1 mm~2 and the chip consumes 28 mW with a 1.8 V power supply.     

一种采用差分时域比较器的12位200KS/s低功耗逐次逼近型模数转换器

A low power 12-bit 200-kS/s SAR ADC is proposed.This features a differential time domain comparator whose offset is cancelled by using a charge pump and a phase frequency detector instead of the preamplifiers usually needed in a high resolution comparator.The proposed ADC is manufactured in 0.18-μm CMOS technology and the measured SNR and SNDR are 62.5 dB and 59.3 dB,respectively,with a power consumption of 72μW at a 200-kS/s sampling rate.The device operates with a 1.8-V power supply and achieves a FOM ...     

一种8-b 180KSPS的带有新颖的时域比较器且有效位数7.97的差分逐次逼近模数转换器

This paper presents a differential successive approximation register analog-to-digital converter (SAR ADC) with a novel time-domain comparator design for wireless sensor networks. The prototype chip has been implemented in the UMC 0.18-μ m 1P6M CMOS process. The proposed ADC achieves a peak ENOB of 7.98 at an input frequency of 39.7 kHz and sampling rate of 180 kHz. With the Nyquist input frequency, 68.49-dB SFDR, 7.97-ENOB is achieved. A simple quadrate layout is adopted to ease the routing complexity of the common-centroid symmetry layout. The ADC maintains a maximum differential nonlinearity of less than 0.08 LSB and integral nonlinearity less than 0.34 LSB by this type of layout.     

一种带改进开关和使用新型按比例缩小策略的10位120兆的流水线模数转换器

这篇文章介绍了一种精度为10比特,采样率为120兆的双通道流水线模数转换器(ADC)。这个模数转换器利用了体效应来改善开关的导通性能。在版图绘制中应用了一种新型的按比例缩小的策略。基于0.18μm的CMOS工艺,ADC的整个版图面积为2.05x1.83 mm2。在采样频率为120兆,输入信号频率为4.9兆的情况下,无杂散动态范围达到了74.32dB,信号噪音失真比为55.34dB,3伏供电电压下每通道的功耗为220毫瓦。     

A 26-Gb/s CMOS optical receiver with a reference-less CDR in 65-nm CMOS

This paper presents a 26-Gb/s CMOS optical receiver that is fabricated in 65-nm technology. It consists of a triple-inductive transimpedance amplifier (TIA), direct current (DC) offset cancellation circuits, 3-stage gm-TIA variable-gain amplifiers (VGA), and a reference-less clock and data recovery (CDR) circuit with built-in equalization technique. The TIA/VGA front-end measurement results demonstrate 72-dBΩ transimpedance gain, 20.4-GHz −3-dB bandwidth, and 12-dB DC gain tuning range. The measurements of the VGA’s resistive networks also demonstrate its efficient capability of overcoming the voltage and temperature variations. The CDR adopts a full-rate topology with 12-dB imbedded equalization tuning range. Optical measurements of this chipset achieve a 10⁻¹² BER at 26 Gb/s for a 2¹⁵−1 PRBS input with a −7.3-dBm input sensitivity. The measurement results with a 10-dB @ 13 GHz attenuator also demonstrate the effectiveness of the gain tuning capability and the built-in equalization. The entire system consumes 140 mW from a 1/1.2-V supply.     

A 10-bit 300-MS/s asynchronous SAR ADC with strategy of optimizing settling time for capacitive DAC in 65 nm CMOS

A 10-bit 300-MS/s asynchronous SAR ADC in 65 nm CMOS is presented in this paper. To achieve low power, binary-weighed capacitive DAC is employed without any digital correction or calibration. Consequently, settling time for the capacitive DAC would be a dominant limiting factor for the ADC operating speed. A novel architecture is proposed to optimize the settling time for the capacitive DAC, which depends merely on the on-resistance of switches and the capacitance of unit capacitor and irrelevant to the resolution. Therefore, high-speed high-resolution SAR ADC is possible. What is deserved to highlight is that the architecture improves the ADC performance at a fraction of the cost, with only some capacitors and control logic added. Post-layout simulation has been made for the SAR ADC. At a 1.2-V supply voltage and a sampling rate of 300 MS/s, it consumes 1.27 mW and achieves an SNDR of 60 dB, an SFDR of 67.5 dB, with the Nyquist input. The SAR ADC occupies a core area of 450×380 μm².     

一种具有84.8dB SFDR和72dB SNDR的14位80MS/s CMOS模数转换器

本文描述了一种基于0.35μm CMOS工艺的14位采样率80MS/s的流水线型模数转换器的设计. 所提出的电荷分享校正技术消除了与信号相关的电荷注入效应, 加上片内的低抖动时钟电路, 保证了模数转换器的高动态性能. 一种信号电容开关技术和高对称版图减小了电容失配, 确保了模数转换器的总线性度. 测试结果表明, 该模数转换器在36.7MHz输入频率下, 实现了11.6位的有效位, 84.8dB的无杂散动态范围(SFDR), 72dB的信号噪声失真比(SNDR), 在无校准情况下获得了＋0.63/－0.6 LSB的微分非线性和＋1.3/－0.9 LSB的积分非线性. 输入频率200MHz时,仍然可以保持75dB的SFDR和59dB的SNDR.     

用于百万像素级CMOS图像传感器的10位50MS/s流水线ADC设计

高速高精度ADC是CMOS图像传感器中的重要部分。随着工艺的进步,低功耗设计已经吸引了很多人的注意。为了在没有降低表现的情况下控制功耗,在本设计采用相同结构放大器共用相同的偏置电路技术,并且采用了共源共栅补偿技术来降低功耗。噪声和不匹配也是流水线ADC中重要的误差源,因此采用了Matlab对这两者进行了仔细的计算和系统仿真。在本文中,提出了一个10位50MS/s的 流水线ADC核心。这个设计可以用于大像素规模的CMOS图像传感器。本设计在表现和功耗上取得了很好的平衡。     

带2位/级的新型转换过程和自锁定比较器的6位600 MS/s 逐次逼近型模数转换器

本文提出了一个在600MHz采样率下的6位逐次逼近寄存器（SAR）。由于对ADC高速的追求,本设计借鉴了2位/级的思想,并在此基础上给出了2位/级的新型转换过程,解决了DAC之间不匹配问题并减少了功耗。同时,采用了改进的分布式比较器拓扑结构以获得速度。通过整合多比较器的输入端减小了时钟馈通效应和失调,引入比较器的自锁技术进一步减小了功耗。测量结果表明,在600MHz采样频率、5.6MHz输入频率下,得到信号与噪声加失真比（SNDR）为32.13 dB,无杂散动态范围（SFDR）为44.05 dB。当输入频率接近奈奎斯特时,SNDR / SFDR分别下降到28.46/39.20 dB。最终该ADC由TSMC 65纳米工艺制造,其设计面积为0.045 mm2。在1.2V电源电压下的功耗为5.01 mW,并得到FoM值为252 fJ/转换过程。