High-gain mode-adapted semiconductor optical amplifier with12.4-dBm saturation output power at 1550 nm

A mode-adapted semiconductor optical amplifier (SOA) has been fabricated and packaged. At the gain peak, 1500 nm, the fiber to fiber gain was measured to be 32.5 dB. Statistics for eight packaged devices indicate that a fiber-to-fiber gain of 26.3 dB ± 1.3 dB and a saturation output power of 12.4 dBm ± 0.4 dBm are typical at a bias of 500 mA for λ = 1550 nm. Polarization sensitivity at 1550 nm was measured to be 1.1 dB ± 0.4 dB and the transverse electric (TE) polarization state noise figure (NF) was determined to be 7.0 dB ± 0.5 dB. The coupling loss was 1.3 dB ± 0.1 dB per facet. This SOA, with a 1.3-nm filter, was used as an optical preamplifier in a 10-Gb/s return-to-zero (RZ) system testbed with a pseudorandom binary sequence (PRBS) of 2³¹ -1. A 14.5-dB improvement in receiver sensitivity was observed at a bit error rate (BER) of 10^-11     

AlGaInAs-InP材料系1550nm偏振无关半导体光放大器

采用低压金属有机气相外延设备生长并制作了1550nm AlGaInAs-InP偏振无关半导体光放大器,有源区为3周期的张应变量子阱结构,应变量为-0.40%.器件制作成脊型波导结构,并采用7°斜腔结构以有效抑制腔面反射.经蒸镀减反膜后,半导体光放大器的自发辐射功率的波动小于0.3dB,3dB带宽为56nm.半导体光放大器小信号增益近20dB,带宽大于55nm.在1500～1590nm波长范围内偏振灵敏度小于0.8dB,峰值增益波长的饱和输出功率达7.2dBm.     

Uniform and high-performance eight-channel bent waveguide SOA arrayfor hybrid PICs

A uniform and high performance eight-channel spot-size-converter integrated SOA (SSC-SOA) array for optical switching gate applications is demonstrated. Bow-shaped waveguides are used to achieve high gain and high ON-OFF ratio switching. All channels of the fabricated eight-channel array show a high fiber-to-fiber gain of 12.7 dB, low polarization-dependent gain (PDG) of <0.5 dB, and a high ON-OFF ratio of >50 dB at a low drive current of 40 mA     

Wide-band polarization-independent tensile-strained InGaAs MQW-SOAgate

A high-performance tensile-strained InGaAs multi-quantum-well semiconductor optical amplifier (MQW-SOA) gate developed for wavelength-division-multiplexing (WDM) applications is reported. The -0.47% InGaAs-strained SOA gate has a very low polarization dependence of 0.3 dB over a driving current between 30 and 60 mA and a wide-input signal wavelength range from 1530 to 1580 nm. The fabrication tolerance of the mesa stripe width is very large, ranging from 1.0 to 1.75 μm. The MQW-SOA gate has an extinction ratio of more than 40 dB. The fiber-to-fiber lossless operation current is less than 50 mA over the fiber-amplifier gain band. The gating speed is less than 1 ns     

Long wavelength vertical-cavity semiconductor optical amplifiers

This paper overviews the properties and possible applications of long wavelength vertical-cavity semiconductor optical amplifiers (VCSOAs). A VCSOA operating in the 1.3-μm wavelength region is presented. The device was fabricated using wafer bonding; it was optically pumped and operated in reflection mode. The reflectivity of the VCSOA top mirror was varied in the characterization of the device. Results are presented for 13 and 12 top mirror periods. By reducing the top mirror reflectivity, the amplifier gain, optical bandwidth, and saturation output power were simultaneously improved. For the case of 12 top mirror periods, rye demonstrate 13-dB fiber-to-fiber gain, 0.6 nm (100 GHz) optical bandwidth, a saturation output power of -3.5 dBm and a noise figure of 8.3 dB. The switching properties of the VCSOA are also briefly investigated. By modulating the pump laser, we have obtained a 46-dB extinction ratio in the output power, with the maximum output power corresponding to 7-dB fiber-to-fiber gain. All results are for continuous wave operation at room temperature     

Spot-size converter integrated polarization insensitivesemiconductor optical amplifiers

Spot-size converter integrated polarization-insensitive semiconductor optical amplifier (SSC-SOA) with angled window has been designed and fabricated using both selective area growth and successive lateral tapering. A narrow beam divergence of 80×15°, 0.2-dB amplified-spontaneous-emission ripple, and 1.5-dB polarization sensitivity within the 3-dB optical bandwidth were obtained at 29.7-dB chip gain. The fiber-to-fiber gain of the SOA module was measured to be 22 dB at 200 mA, i.e., the coupling loss was below 4 dB per each facet     

Silica-based 71-channel arrayed waveguide grating

With the rapid increase of global information capaci-ty,all optical wavelength division multiplexing(WDM)networks are very attractive because they are capable ofprocessing broadband optical signals without convertingthem to electronic signals.Large channe…     

高增益偏振不灵敏InGaAs/InP体材料半导体光放大器

采用三元InGaAs体材料为有源区，通过直接在InGaAs体材料中引入0．20％张应变来加强TM模的增益，研制了一种适合于作波长变换器的偏振不灵敏半导体光放大器(SOA)。在低压金属有机化学气相外延(LPMOVPE)的过程中，只需调节三甲基Ga的源流量便可获得所要求的张应变量。制作的半导体光放大器在200mA的注入电流下，获得了50nm宽的3dB光带宽和小于0．5dB的增益抖动；重要的是，半导体光放大器能在较大的电流和波长范围里实现小于1．1dB的偏振灵敏度。对于1．55gm波长的信号光，在200mA的偏置下，其偏振灵敏度小于1dB，同时获得了大于14dB光纤到光纤的增益，3dBm的饱和输出功率和大于30dB的芯片增益。用作波长变换器，可获得较高的波长变换效率。进一步提高半导体光放大器与光纤的耦合效率，可得到性能更佳的半导体光放大器。     

低偏振灵敏度半导体光放大器

报道了基于混合应变量子阱材料的半导体光放大器 (SOA)。利用张应变量子阱加强了TM模的增益 ,使之接近TE模的增益 ,从而使SOA的偏振灵敏度大为降低。在 150mA的偏置下 ,获得了 2 4dB的小信号增益和 1dB的偏振灵敏度。     

Optical preamplifier using antireflection-coating-free semiconductor optical amplifier with signal-inverted ASE

We fabricated an antireflection (AR)-coating-free semiconductor optical amplifier (SOA) with an absorbing region for an optical preamplifier. In the fabricated SOA, the resonance of light was fully suppressed so that the amplitude of the ripple of amplified spontaneous emission (ASE) spectra was as small as 0.36 dB, which is comparable to conventional SOAs with AR coating at both facets. We formed an optical preamplifier using the AR-coating-free SOA. The gain saturation of the SOA gives us the signal conversion to ASE and the amplification of the signal. The small-signal fiber-to-fiber and chip gain of the preamplifier were 11.4 and 20.0 dB, respectively. The 3-dB optical gain bandwidth of the preamplifier was about 30 nm.     

Thulium-doped tellurite fiber amplifier

Gain in the S-band is demonstrated in a thulium-doped tellurite fiber amplifier using dual pump and bidirectional pumping schemes. Two pump schemes were employed: 795/1064 and 1047/1550 nm. The gain profile is broader than achieved in a fluoride fiber and overlaps with the C-band of the erbium-doped fiber amplifier. We reach a fiber-to-fiber gain of 11 dB and an internal gain of 35 dB.     

High-output-power polarization-insensitive semiconductor optical amplifier

A high-output-power 1550 nm polarization-insensitive semiconductor optical amplifier (SOA) was developed for use as a compact in-line optical amplifier. A very thin tensile-strained bulk structure was used for the active layer and active width-tapered spot-size converters (SSCs) were integrated on both input and output sides. The SOA module exhibited a high saturation output power of +17 dBm together with a low noise figure of 7 dB, large gain of 19 dB, and low polarization sensitivity of 0.2 dB for optical signals of 1550 nm wavelength. For the amplification of optical signals modulated at 10 Gb/s in the nonreturn-to-zero (NRZ) format, a good eye pattern without waveform distortion due to the pattern effect was obtained at an average output power of up to +12 dBm. Additionally, good amplification characteristics were demonstrated for the signal wavelength range corresponding to the C-band.     

宽带偏振不灵敏张应变InGaAs半导体放大器光开关

研制了一种张应变准体InGaAs半导体放大器光开关.该结构具有显著的带填充效应,从而导致在80mA的注入电流下,器件的3dB光带宽大于85nm(1520～1609nm).该带宽几乎同时全部覆盖了C带(1525～1565nm)和L带(1570～1610nm).最为重要的是,在3dB光带范围内,光开关的偏振灵敏度小于0.7dB;光纤到光纤无损工作电流在70～90mA之间;消光比大于50dB.通过降低了载流子寿命,开关速度有所提高.在未来密集波分复用通信系统中,这种宽带偏振不灵敏半导体放大器光开关很有实用前景.     

Facet reflectivity of a spot-size-converter integratedsemiconductor optical amplifier

Traveling-wave type semiconductor optical amplifiers (SOAs) integrated with a spot-size-converter (SSC) are extensively studied for improvement of coupling efficiency with single-mode fibers and for cost reduction in packaging. In this paper, the structural dependence of the SSC on effective facet reflectivity R_eff is investigated theoretically and experimentally. It is shown that, not only sufficient mode-conversion in the SSC region, but also the introduction of angled facets, are essential for reducing R_eff. A small gain ripple (less than 0.1 dB) in an amplified spontaneous emission (ASE) spectrum, fiber-to-fiber gain of 26 dB, and saturation output power of 7 dBm are observed for the fabricated SOA, which consists of a window length of 20 μm, facet angle of 7°, and anti-reflection coated facet of less than 1% reflectivity     

Gain properties and optical-feedback suppression of asymmetrical curved active waveguides

Elaborately-designed asymmetrical curved active waveguides are introduced to improve the gain properties of semiconductor optical amplifiers (SOAs) by internal distributed optical-feedback suppression. An analytical model of the double-energy-level system is utilized in the simulation and designed by the finite difference time domain (FDTD) method. Under a 280 mA driving current, the optimized curved SOA with the simple device structure without isolators performs a more than 18 dB fiber-to-fiber gain, 980 μW spontaneous emission power, and 13 dBm saturation power.     

A Four‐Channel Laser Array with Four 10 Gbps Monolithic EAMs Each Integrated with a DBR Laser

A distributed Bragg reflector (DBR) laser and a high speed electroabsorption modulator (EAM) are integrated on the basis of the selective area growth technique. The typical threshold current is 4 to 6 mA, and the side mode suppression ratio is over 40 dB with single mode operation at 1550 nm. The DBR laser exhibits 2.5 to 3.3 mW fiber output power at a laser gain current of 100 mA, and a modulator bias voltage of 0 V. The 3 dB bandwidth is 13 GHz. A 10 Gbps non‐return to zero operation with 12 dB extinction ratio is obtained. A four‐channel laser array with 100 GHz wavelength spacing was fabricated and its operation at the designed wavelength was confirmed.     

Electron–Hole Plasma-Induced Spectral Blueshift of Optical-Data Injection Mode-Locked Semiconductor Optical Amplifier Fiber Laser

Under an optical nonreturn-to-zero (NRZ) data injection at 10 Gbit/s, the 10-GHz mode-locking and pulsed return-to-zero (RZ) clock extraction from a semiconductor optical amplifier (SOA) based fiber ring is investigated in this paper. The diagnoses on gain and intracavity-power-controlled anomalous blueshifted spectrum and subpicosecond timing jitter are demonstrated. By increasing the injecting power of the optical NRZ data from ${-}3$ to 8 dBm into the SOA bias at different currents, the mode locking is completed with a dc level greatly decreasing from 480 to 50 $mu$ W (only 1.5% of the mode-locked pulse power at 3 mW), corresponding to a pulse/dc amplitude contrast ratio up to 18 dB. Increasing the SOA bias current up to 350 mA significantly suppresses the timing jitter from 1.8 ps to 345 fs, and the extracted RZ clock pulse is shortened from 55 to 27 ps. The pulsewidth of the amplified SOAFL is compressed from 11 ps to 836 fs after dispersion compensation. At constant data injection level, the increasing SOA bias or gain oppositely redshifts the mode-locked SOA fiber ring laser (SOAFL) spectrum by 5 nm. The amplifier spontaneous emission of SOA at short wavelength region (${sim} {hbox {1520}}$ nm) is eliminated with increasing NRZ data power, whereas the mode-locking gain peak arises and blueshifts from 1558 to 1552 nm due to the band-filling effect. Such a blueshift in mode-locking spectrum becomes more significant in SOA at lower bias (or gain) condition. A theoretical model interprets the correlation between the nonlinear gain suppression-induced variation of electron–hole plasma in SOA and the blueshifted mode-locking SOAFL spectrum, which is occurred when the gain saturation condition for the SOA becomes more pronounced.      

A low-distortion CMOS IF VGA with linear-in-dB control and temperature compensation

A CMOS intermediate-frequency (IF) variable-gain amplifier (VGA) is presented in this paper. A transconductance linearization scheme is proposed for the VGA core based on a signal-subtracting structure to achieve low distortion. Temperature-independent decibel-linear gain control characteristic is achieved by an exponential voltage generator based on transfer characteristics of differential pair. The whole VGA, including a highly-linear output stage, is fabricated in 0.25 μm CMOS technology. Measurements show that the VGA provides a total gain control range of 43 dB with less than 1.2 dB error over 0–80°C, and a constant 3-dB bandwidth of 100 MHz. The third-order intermodulation (IM3) distortion at differential output of 2 V_PP is better than −55 dB. The VGA dissipates 22.6 mA averagely from 3.3 V supply, and occupies approximately 0.53 mm².     

Analysis of electro-optic switches with series-coupled multiple microring resonators

In terms of the coupled mode theory, microring resonance and electro-optic modulation princeple, a reasonable project is proposed for designing an electro-optic switch with the series-coupled multiple microring resonators. The simulation and optimization are performed at the resonant wavelength of 1550 nm. The results are as follows: the core size of the microring is 1.6 μm×1.6 μm, the confined layer between the core and the electrode is 1.6 μm, the thickness of the electrode is 0.15 μm, the radius of the m...