Nonlinear optical and electrooptical effects in 2-methyl-4-nitro N-methylaniline (MNMA) crystals

Single crystals of 2-methyl-4-nitro-N-methylaniline (MNMA) have been grown from the melt. The crystal structure was determined (orthorhombic, Pna2_I (2 mm), Z=4, a =17.788(6) Å, b=11.893(4) Å, c=3.907(2) Å). The refractive indexes n_a and n_c were measured between 500 and 700 nm [ n_a(633 nm)=2.148(10), n_c(633 nm)=1.520(3)]. The nonlinear optical susceptibilities coefficients r ₃₁=8 pm/V and r₃₃=7.5 pm/V were determined. Most optical properties can be explained in terms of molecular orientation and polarizability     

Intermodulation analysis of dual-gate FET mixers

A detailed intermodulation analysis of dual-gate FET (DG-FET) mixers is presented. The analysis method is based on a large-signal/small-signal analysis using time-varying Volterra-series methods. The analysis program allows one to probe the internal nodes of DG-FETs to evaluate the nonlinear current components. Therefore, it helps physical understanding of intermodulation distortion (IMD) mechanisms in DG-FET mixers. The program was used to identify the major sources of IMD generation. It was found from the analysis that the nonlinearities due to the output conductance (G_d3 and G_d2) of the lower common-source FET were most responsible for IMD generation. The impact of the upper common-gate FET on IMD generation was also found to be nonnegligible, especially at high local oscillator (LO) power levels. The analysis also predicted the presence of MM "sweet spots" using bias optimization, which was experimentally proved by the fabricated mixers at X- and Ka-bands. The optimized X-band hybrid mixer showed measured intermodulation characteristics (OIP₃ ~13.6 dBm) comparable to those of the resistive mixers (OIP₃ ~15.3 dBm) with low LO and dc power conditions     

A New Linearization Technique for CMOS RF Mixer Using Third-Order Transconductance Cancellation

A new third-order transconductance (g_m3) cancellation technique is proposed and applied to a conventional radio frequency (RF) mixer for improving circuit linearity. The bulk-to- source voltage is applied to adjust the peak value position of gms. The cancellation of g_m3 is utilized by a negative peak g_m3 transistor combined in parallel with a positive peak g_m3 transistor. For a single device, the measured adjacent channel power ratio (ACPR) and third-order intermodulation (IMD3) distortion are both improved over 15 dB. A Gilbert-cell mixer in commercial 0.18-mum CMOS process was designed using the proposed method to further evaluate the linearity. The compensated g_m3 device is placed in the input RF gm-stage and then reducing the principle nonlinearity source of the mixer. From the experiment results, the ACPR and IMD3 of the mixer are improved about 10 and 15 dB, respectively.     

A Novel Linearization Method of CMOS Drive Amplifier Using IMD Canceller

A novel linearization method for CMOS drive amplifier using intermodulation distortion (IMD) canceller is presented. The IMD cancellation method is composed of a cascode main amplifier and a common-source IMD canceller. The additional common-source amplifier generates IMD3 signals with 180deg phase difference against the IMD3 of the cascode main amplifier. The linear drive amplifier is designed and fabricated by CMOS 0.18 mum process. The output IP₃ of +13 dBm is achieved with the power gain of +11.6 dB, the output P_{1 dB} of + 5.5 dBm, and the power-added efficiency of 21%.     

Raman Scattering and Nd3+ Laser Operation in NaLa(WO 4)2

The continuous-wave laser operation of Nd-doped tetragonal NaLa(WO ₄)₂ crystal is studied at room temperature by optical pumping in the spectral region overlapping AlGaAs diode laser emission. This crystal has inhomogeneously broadened optical bands. From the room-temperature spectroscopic parameters determined it is found that the optimum Nd concentration for the ⁴F_3/2rarr⁴I_J laser channels must be in the 3-5 at.% range. For J=11/2 and 13/2 channels (lambdaap1.06 and 1.3 mum) the most favourable polarization configuration is parallel to the crystallographic c axis, while for J=9/2 little polarization dependence of the laser efficiency is predicted. Laser operation was achieved with a 3.35 at.% Nd-doped sample grown by the Czochralski method. The laser operation was tested in an hemispherical optical cavity pumped by a Ti:sapphire laser. Stimulated emission at lambda=1056 nm was achieved for a wide spectral pumping range, lambda=790-820 nm. Stimulated Raman scattering was achieved in the picosecond regime with an efficiency similar to that of monoclinic KY(WO₄)₂ reference compound     

Effect of F2 Postmetallization Annealing on the Electrical and Reliability Characteristics of HfSiO Gate Dielectric

The effects of fluorine (F₂) annealing on the electrical and reliability characteristics of HfSiO MOSFETs were investigated. Compared with a control sample annealed in conventional forming gas (H₂/N₂=4%/96%), additional annealing in a fluorine ambient (F₂/Ar=0.3%/99.7%) at 400 degC for 20 min improved the electrical characteristics such as lower interface trap density and higher transconductance. In addition, MOSFET samples annealed in a F₂ ambient exhibited less degradation under hot-carrier stress and positive bias temperature stress. These improvements can be explained by fluorine incorporation at the high-k/Si interface, which was confirmed by an X-ray photoelectron spectroscopy analysis     

Low-pressure H2/N2 annealing on indium tin oxide film

Annealing of indium tin oxide (ITO) film in low-pressure H₂/N₂ was investigated. On carefully selecting the annealing process window, apparent electrical property improvement as well as good optical property can be obtained. It was found that ITO annealed with 2 Pa, H₂/N₂:6/6 sccm, at 500 °C for an hour can increase its electrical conductivity 60% more than ITO without annealing, 58% more than ITO annealed with pure H₂. An annealed ITO without specially selected recipe can easily possess worse electrical and optical properties than that without annealing. It can be explained that annealing ITO in a hydrogen-contained environment can lead to hydrogen reduction–oxygen vacancy playing a donor role in ITO; however, annealing also provides the energy to remove ITO material defects including donors.     

Optical intensity modulators using diazo-dye-substituted polymerchannel waveguides

The electrooptic (EO) modulation of 1.32 μm laser light is measured in Mach-Zehnder channel waveguides fabricated with diazo-dye-substituted polymers with coplanar-waveguide (CPW) or microstrip (MS) electrodes. Two types of channel waveguide fabricated by photobleaching or O₂ reactive-ion etching (RIE) exhibit the same EO coefficients r₃₃ under the same poling condition. However, the photobleached waveguides show a lower half-wave voltage than the RIE-fabricated ones because of both the optical power concentration in a core layer and the existence of an EO active cladding layer. These tendencies are well explained by considering “effective” overlap integrals between the optical and electric fields, including the distribution of EO-active regions. The maximum r₃₃ value (26 pm/V) of the poled diazo-dye-substituted polymer is obtained with an RIE-fabricated MS-modulator     

LiNbO3晶体纳秒级光开关的研究

LiNbO3晶体由于其透光范围广，响应速度快，不易潮解等特点而广泛用于高精度和高速光开关快门。为了将LiNbO3光开关曝光时间拓宽到纳秒领域从而弥补现有的高速光开关的不足，文章阐述了LiNbO3作为光开关理论原理，对多波段通光的晶体长宽比进行了优化设计，并对LiNbO3纳秒级光开关的可行性进行了实验验证。实验半波电压与理论符合很好，实验光信号和电信号在纳秒级范围内能实现同步响应。研究结果证实了LiNbO3光开关在纳秒级范围内的可行性，并为LiNbO3纳秒级光开关的制作提供了理论和实验依据。     

Substrate Effects on Resonant Frequency of Silicon-Based RF On-Chip MIM Capacitor

This brief presents an analytical model that describes a silicon-based RF on-chip metal-insulator-metal (MIM) capacitor including the parasitics originating from its coupling with backend intermetal dielectric (IMD) scheme and the substrate. Results show that the resonant frequency f_re depends on the intrinsic capacitance, inductance, and substrate effects of the MIM. The model and f_re formula are verified experimentally for several types of MIM capacitors (i.e., high kappa and Si₃N₄ based) integrated on different IMDs (e.g., undoped glass and low kappa). The results also show that for a given C_MIM, if the capacitance density is increased further so that the area is shrunk, and the inductances are reduced to a level that is comparable to the substrate effects from item epsiv₀epsiv_rrho_Si h_eff|SiR₂/h_eff|IMD, then further f_re improvement could be limited     

Hot phonons and Auger related carrier heating in semiconductoroptical amplifiers

We have directly measured the carrier temperature in semiconductor optical amplifiers (SOAs) via spontaneous emission and we demonstrate an unexpectedly high carrier temperature. The direct correlation of the temperature increase with the carrier density suggests Auger recombination as the main heating mechanism. We have developed a model based on rate equations for the total energy density of electrons, holes, and longitudinal-optical phonons. This model allows us to explain the thermal behavior of carrier and phonon populations. The strong heating observed is shown to be due to the combined effects of hot phonon and Auger recombination in the valence band. We also observe an evolution of the Auger process, as the density is increased, from cubic to square dependence with coefficients C₃ = 0.9 10^-28 cm⁶ s^-1 and C₂ = 2.4 10^-10 cm³ s^-1. This change is explained by the hole quasi-Fermi level entering the valence band     

Improved gain performance in Yb3+-sensitized Er3+-doped alumina (Al2O3) channel opticalwaveguide amplifiers

Small-signal amplification in short, Yb³⁺-sensitized, Er³⁺-doped alumina (Al₂O₃) channel optical waveguides with high Er³⁺ concentrations is analyzed. Taking into account uniform up conversion, excited state absorption (ESA) from the Er³⁺ metastable level (⁴I_13/2 ), and Yb³⁺→Er³⁺ energy transfer by cross relaxation, the obtainable gain improvements compared to Yb³⁺ -free Er³⁺-doped Al₂O₃ optical waveguides are investigated. The amplifier model is based on propagation and population rate equations and is solved numerically by combining finite elements and the Runge-Kutta algorithm. The analysis predicts that 5-cm long Yb³⁺/Er³⁺ co-doped Al₂O ₃ waveguides show 13-dB net signal gain for 100 mW pump power at λ_p=980 nm     

Sub-bandgap refractive indexes and optical properties of Si-doped β-Ga2O3 semiconductor thin films

In this article, we present a theoretical study on the sub-bandgap refractive indexes and optical properties of Si-doped β-Ga₂O₃ thin films based on newly developed models. The measured sub-bandgap refractive indexes of β-Ga₂O₃ thin film are explained well with the new model, leading to the determination of an explicit analytical dispersion of refractive indexes for photon energy below an effective optical bandgap energy of 4.952 eV for the β-Ga₂O₃ thin film. Then, the oscillatory structures in long wavelength regions in experimental transmission spectra of Si-doped β-Ga₂O₃ thin films with different Si doping concentrations are quantitively interpreted utilizing the determined sub-bandgap refractive index dispersion. Meanwhile, effective optical bandgap values of Si-doped β-Ga₂O₃ thin films are further determined and are found to decrease with increasing the Si doping concentration as expectedly. In addition, the sub-bandgap absorption coefficients of Si-doped β-Ga₂O₃ thin film are calculated under the frame of the Franz–Keldysh mechanism due to the electric field effect of ionized Si impurities. The theoretical absorption coefficients agree with the available experimental data. These key parameters obtained in the present study may enrich the present understanding of the sub-bandgap refractive indexes and optical properties of impurity-doped β-Ga₂O₃ thin films.     

High-Brightness Wavelength Beam Combined Semiconductor Laser Diode Arrays

We report the wavelength beam combining of an array of high-power high-brightness 970-nm slab-coupled optical waveguide lasers. A 50-W peak power under quasi-continuous-wave (CW) operation was measured in an output beam with a beam quality of M_x,y ²=1.2, and 30 W under CW operation was measured with a beam quality of M_x,y ²=2     

SILK compatibility with the IMD process using copper metallization

This work presents the results of SILK compatibility with the materials used in the damascene structure with copper metallization. Firstly, the thermal stability of the material was carefully evaluated; excellent stability at 450°C was confirmed. Moreover, 450°C is a good curing temperature for obtaining a low dielectric constant (2.7). The conventional PECVD hard masks, SiO₂ (from SiH₄ or TEOS precursors) and Si_xN_y do not affect the SILK properties. Finally, it was verified that an OMCVD TiN barrier is efficient in preventing copper diffusion. It was demonstrated that SILK should reach the performance requested for IMD materials in the damascene structure with Cu metallization.     

光学表面粒子污染物散射的单层薄膜调控特性

为了降低超精密低损耗光学元件表面粒子污染物的光散射损耗,文中提出通过在光学表面沉积单层薄膜来调控表面场强分布,从而降低散射损耗的方法。理论分析了K9玻璃超光滑光学表面不同厚度单层二氧化硅（SiO₂）和单层二氧化钛（TiO₂）薄膜表面上方半径为100 nm粒子污染物所在处的电场强度,理论分析结果发现,当SiO₂薄膜厚度为137.4 nm,TiO₂薄膜厚度为12.3 nm时,表面粒子污染物所在处的电场强度最小。在此基础上分别计算了光学元件表面沉积厚度为137.4 nm的单层SiO₂薄膜以及厚度为12.3 nm的单层TiO₂薄膜,表面粒子污染物的总散射损耗(S)和双向反射分布函数(BRDF),计算结果表明,在波长为632.8 nm的光垂直入射时,单层SiO₂薄膜和单层TiO₂薄膜可有效降低其表面粒子的BRDF,且可将K9玻璃表面的总散射分别降低12.40%和25.04%。实验验证了单层SiO₂薄膜对于表面粒子污染物散射降低的有效性。     

Capacitance allocation and its role in the performance ofdoubling-circuit pulsed gas lasers: its application to the N2laser

An investigation of the optical output for all possible combinations between the capacitances, C₁ and C ₂, in a doubling circuit N₂ laser is presented. It is shown that a maximum optical output appears when C ₁=C₂ for constant total capacitance. The maximum value increases when the total capacitance increases and the system approaches saturation for capacitance values higher than 20 nF each. This behavior of the optical energy is due to a similar behavior of the current, which becomes maximum when the best coupling of the two loops of the system is achieved through capacitance equality, and the oscillatory behavior of the system is minimized. When this equality is disturbed, either with weak (C₁>C₂ ) or strong (C₂<C₁) coupling of the system, the current and optical outputs decrease. In both cases, the undesirable oscillatory behavior of the system increases. The electric parameters R₁,L₁ of the spark-gap loop and R₂,L₂ of the laser channel loop are calculated     

A Necessary and Sufficient Condition for the Construction of 2-to-1 Optical FIFO Multiplexers by a Single Crossbar Switch and Fiber Delay Lines

In this paper, we prove a necessary and sufficient condition for the construction of 2-to-1 optical buffered first-in-first-out (FIFO) multiplexers by a single crossbar switch and fiber delay lines. We consider a feedback system consisting of an (M+2)times(M+2) crossbar switch and M fiber delay lines with delays d₁,d₂,...,d_M. These M fiber delay lines are connected from M outputs of the crossbar switch back to M inputs of the switch, leaving two inputs (respectively, two outputs) of the switch for the two inputs (respectively, two outputs) of the 2-to-1 multiplexer. The main contribution of this paper is the formal proof that d₁=1 and d_i les d_i+1 les 2d _i, i=1,2,...,M-1, is a necessary and sufficient condition on the delays d₁,d₂,...,d_M for such a feedback system to be operated as a 2-to-1 FIFO multiplexer with buffer Sigma_i=1 ^Md_i under a simple packet routing policy. Specifically, the routing of a packet is according to a specific decomposition of the packet delay, called the C- transform in this paper. Our result shows that under such a feedback architecture a 2-to-1 FIFO multiplexer can be constructed with M=O(log B), where B is the buffer size. Therefore, our construction improves on a more complicated construction recently proposed by Sarwate and Anantharam that requires M=O(radicB) under the same feedback architecture (we note that their design is more general and works for priority queues)     

ESD protection under grounded-up bond pads in 0.13 μmeight-level copper metal, fluorinated silicate glass low-k intermetaldielectric CMOS process technology

Electrostatic discharge (ESD) protection device under the grounded-up bond pad is investigated in 0.13 μm full eight-level copper metal CMOS process technology with fluorinated silicate glass (FSG) low-k intermetal dielectric (IMD), The bonding force and power produces no cracking and no noticeable change in the second breakdown trigger point (V_t2) I_t2). High current I-V measured from the different level metal layer stack structures shows that 1) I_t2 depends very weakly on metal layers used, as expected due to certain junction power dissipation criterion and 2) V _t2 increases with the number of metal layers, The origin of the latter is increased dynamic impedance for increased metal layer number, as clarified by a simple RC model. The model also yields the intrinsic second breakdown trigger current and voltage for the underlying ESD protection device, Successfully configuring ESD protection circuits under the bond pads, therefore, not only is wholly free from the traditional area consumption, but also can substantially relax design constraints, enabling much more flexible and robust ESD schemes for various applications,