2.5Gb/s GaAs MESFET定时判决电路

设计了2.5Gb/s光纤通信用耗尽型GaAs MESFET定时判决电路.通过SPICE模拟表明恢复的时钟频率达2.5GHz,判决电路传输速率达2.5Gb/s.实验证明经时钟信号抽样后判决电路可产生正确的数字信号,传输速率达2.5Gb/s.     

超高速单电源GaAs判决再生电路

设计并模拟分析了光纤通信用超高速单电源 Ga As判决再生电路 ,采用非掺 SI Ga As衬底直接离子注入、1μm耗尽型 Ga As MESFET、平面电路工艺研制出单片 Ga As判决再生电路。实验测试结果表明 ,该电路可对输入信号进行正确的“0”、“1”判决 ,并经时钟抽样后 ,输出正确的数字信号 ,传输速率可达 2 .8Gbit/s,可用于覆盖 2 .5Gbit/s系列光通信系统     

0.18 μm CMOS 10 Gb/s光接收机的单片集成数据再生电路

利用TSMC 0.18 μm CMOS工艺设计的,应用于光纤传输系统SDH STM-64速率级(10 Gb/s)的单片光接收机.该接收机包括限幅放大器、时钟恢复、数据判决电路.后仿真可工作在10 Gb/s速率上.该电路采用1.8 V电源电压,功耗500 mW,50 Ω负载上单端输出.摆幅340 mV,芯片面积1.968 mm×1.135 mm.     

基于LVDS的高速数据交换引擎IP核设计

设计了一种基于LVDS的高速数据交换引擎IP核,并详细阐述了在FPGA上的实现原理和关键设计.该IP核能广泛适用于低速、高速FPGA中,测试结果表明,IP核的逻辑功能正确,可适应从spartan3A器件上时钟频率150MHz,300Mb/s数据传输速率(1位模式,4位模式下达到1.2Gb/s),到Virtex6器件上时钟频率500MHz,1Gb/s数据传输速率(1位模式,4位模式下达到4Gb/s).     

2.5Gb/s/ch 0.18μm CMOS数据恢复电路

设计了一个应用于SFI-5接口的2.5Gb/s/ch数据恢复电路.应用一个延迟锁相环,将数据的眼图中心调整为与参考时钟的上升沿对准,因而同步了并行恢复数据,并降低了误码率.采用TSMC标准的0.18μm CMOS工艺制作了一个单通道的2.5Gb/s/ch数据恢复电路,其面积为0.46mm2.输入231-1伪随机序列,恢复出2.5Gb/s数据的均方抖动为3.3ps.在误码率为10-12的条件下,电路的灵敏度小于20mV.     

2.5Gb/s/ch 0.18μm CMOS数据恢复电路

设计了一个应用于SFI-5接口的2.5Gb/s/ch数据恢复电路.应用一个延迟锁相环,将数据的眼图中心调整为与参考时钟的上升沿对准,因而同步了并行恢复数据,并降低了误码率.采用TSMC标准的0.18μm CMOS工艺制作了一个单通道的2.5Gb/s/ch数据恢复电路,其面积为0.46mm^2.输入231-1伪随机序列,恢复出2.5Gb/s数据的均方抖动为3.3ps.在误码率为10-12的条件下,电路的灵敏度小于20mV.     

一种数据时钟恢复电路的研究与设计

提出了一种支持双数据率的数据时钟恢复电路,对电路中的鉴相器、环路滤波器、压控振荡器等进行了详细的分析研究和设计.基于0.18μm CMOS工艺,在电源电压1.8V下对电路进行仿真.仿真结果显示,电路在2.7 Gb/s和1.62 Gb/s随机流下的抖动峰峰值分别为14 ps和12ps,功耗为80 mW.测试结果显示,时钟恢复电路在2.7 Gb/s和1.62 Gb/s随机流下的抖动峰峰值分别为38 ps和27 ps.     

1.25～3.125 Gb/s连续数据速率CDR设计

设计了一款工作速率为1.25～3.125 Gb/s的连续可调时钟数据恢复(CDR)电路,可以满足多种通信标准的设计需求.CDR采用相位插值型双环路结构,使系统可以根据应用需求对抖动抑制和相位跟踪能力独立进行优化.针对低功耗和低噪声的需求,提出一种新型半速率采样判决电路,利用电流共享和节点电容充放电技术,数据速率为3.125 Gb/s时,仅需要消耗50 μA电流.芯片采用0.13 μm工艺流片验证,面积0.42 m㎡,功耗98 mw,测试结果表明,时钟数据恢复电路接收PRBS7序列时,误码率小于10-12.     

安捷伦科技为10Gb／s和40Gb／s网络系统推出新型电压控制振荡器

安捷伦科技日前宣布 ,为 1 0 Gb/s和 40 Gb/s光纤通信系统推出带有标准同轴连接器的全新系列电压控制振荡器 (VCO)。安捷伦还为 1 0 Gb/s光纤通信系统提供了密封的 TO- 8封装振荡器。这些嵌入式时钟用于同步数据和语音通信系统 ,使其可以在美国标准SONET、欧洲标准 STM和 1 0 Gb/s以太网传输速率下工作。安捷伦的 VCO为网络路由器和远程通信系统中的电路板和线路卡实现必要的多路复用 (MUX)、时钟数据恢复和解复用 (DEMUX)提供时钟同步功能。安捷伦 VCO系列包括以下产品 :1 0 Gb/s OC- 1 92 /STM- 64和 1 0 Gb/s以太网的应…     

12.5Gb/s 0.18μm CMOS时钟与数据恢复电路设计

采用0.18μm CMOS工艺设计实现了一个12.5 Gb/s半速率时钟数据恢复电路(CDR)以及1:2分接器,该CDR及分接器是串行器/解串器(SerDes)接收机中的关键模块,为接收机系统提供6.25GHz的时钟及经二分接后速率降半的6.25Gb/s数据.该电路包括Bang-bang型鉴频鉴相器(PFD)、四级环形压控振荡器(VCO)、V/I转换器、低通滤波器(LPF)、1:2分接器等模块,其中PFD采用一种新型半速率的数据采样时钟型结构,能提高工作速率达到12.5 Gb/s.芯片测试结果显示,在1.8V的工作电压下,VCO中心频率在6.25GHz时,调谐范围约为1GHz;输入12Gb/s、长度为231-1的伪随机数据时,得到6GHz时钟的峰峰抖动为9.12ps,均方根(RMS)抖动为1.9ps;整个系统工作性能良好,二分接器输出数据眼图清晰,电路核心模块功耗为150mW,整体芯片面积0.476×0.538mm2.     

A 40 Gb/s Clock and Data Recovery Module with Improved Phase‐Locked Loop Circuits

A 40 Gb/s clock and data recovery (CDR) module for a fiber‐optic receiver with improved phase‐locked loop (PLL) circuits has been successfully implemented. The PLL of the CDR module employs an improved D‐type flip‐flop frequency acquisition circuit, which helps to stabilize the CDR performance, to obtain faster frequency acquisition, and to reduce the time of recovering the lock state in the event of losing the lock state. The measured RMS jitter of the clock signal recovered from 40 Gb/s pseudo‐random binary sequence (2³¹‐1) data by the improved PLL clock recovery module is 210 fs. The CDR module also integrates a 40 Gb/s D‐FF decision circuit, demonstrating that it can produce clean retimed data using the recovered clock.     

高速光突发模式接收机设计

介绍了一种高速光突发模式接收机。整形电路采用直流耦合跨阻抗前馈式结构。突发同步恢复电路采用一种新颖的固定相位调节振荡器。仿真表明：在传输速率为1．25Gb／s，误码率BER≤10^-9时，接收灵敏度为-25dBm（平均光功率）。最大可接收光功率-1dBm，动态范围可高达24dB，两分组信号保护时间为20ns。对速率为5Gb／s的NRZ突发数据可在10ps之内建立比特同步。     

2.5Gb/s单片时钟恢复数据判决与1:4分接集成电路的设计

用0.25μm CMOS工艺实现一个复杂的高集成度的2.5Gb/s单片时钟数据恢复与1:4分接集成电路.对应于2.5Gb/s的PRBS数据(231-1),恢复并分频后的625MHz时钟的相位噪声为-106.26dBc/Hz@100kHz,同时2.5Gb/s的PRBS数据分接出4路625Mb/s数据.芯片面积仅为0.97mm×0.97mm,电源电压3.3V时核心功耗为550mW.     

HBT transmitter and data regenerator arrays for WDM opticalcommunications application

Current research on next generation Wavelength Division Multiplexed (WDM) all optical networks has identified the need for arrays of laser driver circuits and arrays of receivers, clock recovery, and decision circuits. This paper reports on the development of two AlGaAs-GaAs HBT-based circuits: an eight-channel laser driver array and four-channel signal regeneration array including the limiting amplifier, clock recovery, and decision functions one intended for operation at 155 Mb/s. Subcircuits of the clock recovery array have been verified as suitable for use up to 2.488 Gb/s     

A 10-Gb/s CMOS CDR and DEMUX IC With a Quarter-Rate Linear Phase Detector

This paper presents a 10-Gb/s clock and data recovery (CDR) and demultiplexer IC in a 0.13-mum CMOS process. The CDR uses a new quarter-rate linear phase detector, a new data recovery circuit, and a four-phase 2.5-GHz LC quadrature voltage-controlled oscillator for both wide phase error pulses and low power consumption. The chip consumes 100 mA from a 1.2-V core supply and 205 mA from a 2.5-V I/O supply including 18 preamplifiers and low voltage differential signal (LVDS) drivers. When 9.95328-Gb/s 2³¹-1 pseudorandom binary sequence is used, the measured bit-error rate is better than 10^-15 and the jitter tolerance is 0.5UIpp, which exceeds the SONET OC-192 standard. The jitter of the recovered clock is 2.1 psrms at a 155.52MHz monitoring clock pin. Multiple bit rates are supported from 9.4 Gb/s to 11.3 Gb/s     

Over-10-Gb/s IC's for future lightwave communications

This paper reviews research and development in NTT Laboratories on IC's faster than 10 Gb/s for future optical communication systems. Novel design and circuit techniques achieve such high-speed IC's and stable operation even in packages and modules. High-bit-rate operation of 10 Gb/s (10-GHz equalizing amplifier circuit, a 10-GHz clock recovery circuit, 10-Gb/s decision circuits, and 10-Gb/s multiplexers and demultiplexers) is obtained. 20-Gb/s operation is also achieved for some IC's. Future improvements using advanced device and circuit technologies are discussed, and bit rates over 40 Gb/s are predicted     

2.5Gb/s 0.18μm CMOS时钟数据恢复电路

采用TSMC公司标准的0.18μm CMOS工艺,设计并实现了一个全集成的2.5Gb/s时钟数据恢复电路.时钟恢复由一个锁相环实现.通过使用一个动态的鉴频鉴相器,优化了相位噪声性能.恢复出2.5GHz时钟信号的均方抖动为2.4ps,单边带相位噪声在10kHz频偏处为-111dBc/Hz.恢复出2.5Gb/s数据的均方抖动为3.3ps.芯片的功耗仅为120mW.     

基于半速率锁相环的5Gb/s CMOS单片时钟恢复电路

利用TSMC的O．18μm CMOS工艺,设计实现了单片集成的5 Gb/s锁相环型时钟恢复电路。该电路采用由半速率鉴相器、四相位环形电流控制振荡器、电荷泵以及环路滤波器组成的半速率锁相环结构。测试表明：在输入速率为5 Gb/s、长度为211-1伪随机序列的情况下,恢复出时钟的均方根抖动为4．7 ps。在偏离中心频率6MHz频率处的单边带相位噪声为-112．3 dBe/Hz。芯片面积仅为0．6mm×O．6 mm,采用1.8 V电源供电,功耗低于90 mW。     

7.5 Gb/s monolithically integrated clock recovery circuit using PLLand 0.3-μm gate length quantum well HEMT's

A monolithically integrated clock recovery (CR) circuit making use of the phase-locked loop (PLL) circuit technique and enhancement/depletion AlGaAs/GaAs quantum well-high electron mobility transistors (QW-HEMT's) with gate lengths of 0.3 μm has been realized. A novel preprocessing circuit was used. In the PLL a fully-balanced varactorless VCO was applied. The VCO has a center oscillating frequency of about 7.7 GHz and a tuning range greater than 500 MHz. A satisfactory clock signal has been obtained at a bit rate of about 7.5 Gb/s. The power consumption is less than 200 mW at a supply voltage of -5 V     

5?Gb/s 2:1 fully-integrated full-rate multiplexer with on-chip clock generation circuit in 0.18-μm CMOS

A 5?Gb/s 2:1 full-rate multiplexer (MUX) has been designed and fabricated in SMIC 0.18-??m CMOS process. A clock generation circuit (CGC) is also integrated to provide the MUX with both 2.5 and 5-GHz clock signals. The CGC is realized by a clock and data recovery (CDR) loop with a divide-by-2 frequency divider embedded in, where the two required clocks are obtained after and before the divider, respectively. In addition, the phase relation between data and clock is assured automatically by CDR feedback loop and the precise layout. The whole chip area is 812?×?675???m, including pads. At a single supply voltage of 1.8?V, the total power consumption is 162?mW with an input sensitivity of <25?mV and a single-ended output swing of above 300?mV. And due to the full-rate architecture, the pulse width distortion (PWD) with multiplexed data is removed. The measured results also show that the circuit can work reliably at any input data rate between 2.46 and 2.9?Gb/s without need for external components, reference clock, or manual phase alignment between data and clock.