In situ synthesis and properties of self-reinforced $$\hbox {Si}_{3} \hbox {N}_{4}\textendash \hbox {SiO}_{2}\textendash \hbox {Al}_{2} \hbox {O}_{3}\textendash \hbox {Y}_{2}\hbox {O}_{3} \ (\hbox {La}_{2}\hbox {O}_{3}$$) glass–ceramic composites

In-situ-grown \(\upbeta \!\hbox {-Si}_{3}\hbox {N}_{4}\)-reinforced \(\hbox {SiO}_{2}\textendash \hbox {Al}_{2}\hbox {O}_{3}\textendash \hbox {Y}_{2}\hbox {O}_{3}\) \((\hbox {La}_{2}\hbox {O}_{3})\) self-reinforced glass–ceramic composites were obtained without any \(\upbeta \!\hbox {-Si}_{3}\hbox {N}_{4}\) seed crystal. These composites with different compositions were prepared in a nitrogen atmosphere for comparison of phase transformation and mechanical properties. The results showed that \(\hbox {SiO}_{2}\textendash \hbox {Al}_{2}\hbox {O}_{3}\textendash \hbox {Y}_{2}\hbox {O}_{3}\) \((\hbox {La}_{2}\hbox {O}_{3})\) glass can effectively promote \(\upalpha \)- to \(\upbeta \!\hbox {-Si}_{3}\hbox {N}_{4}\) phase transformation. The crystallized \(\hbox {Y}_{2}\hbox {Si}_{2}\hbox {O}_{7}\textendash \hbox {La}_{4.67}\hbox {Si}_{3}\hbox {O}_{13}\) phases with a high melting point significantly benefited the high-temperature mechanical properties of the composites. The \(\hbox {Si}_{3}\hbox {N}_{4}\textendash \hbox {SiO}_{2}\textendash \hbox {Al}_{2} \hbox {O}_{3}\textendash \hbox {Y}_{2}\hbox {O}_{3}\) \((\hbox {La}_{2}\hbox {O}_{3})\) glass–ceramic composites exhibit excellent mechanical properties compared with unreinforced glass–ceramic matrix, which is undoubtedly attributed to the elongated \(\upbeta \!\hbox {-Si}_{3}\hbox {N}_{4}\) grains. These glass–ceramic \(\hbox {Si}_{3}\hbox {N}_{4}\) composites with excellent comprehensive properties might be a promising material for high-temperature applications.     

Structural stability and magnetic properties of $$\hbox {Cu}_{m}\hbox {Co}_{n}\hbox {NO}$$ ($$m+n = 2$$m+n=2–7) clusters

A theoretical study of NO adsorption on \(\hbox {Cu}_{m}\hbox {Co}_{n}\) (2 \(\le m+n \le \) 7) clusters was carried out using a density functional method. Generally, NO is absorbed at the top site via the N atom, except in \(\hbox {Cu}_{3}\hbox {NO}\) and \(\hbox {Cu}_{5}\hbox {NO}\) clusters, where NO is located at the bridge site. \(\hbox {Co}_{2}\hbox {NO}\), \(\hbox {Co}_{3}\hbox {NO}\), \(\hbox {Cu}_{2}\hbox {Co}_{2}\hbox {NO}\), \(\hbox {Co}_{5}\hbox {NO}\), \(\hbox {Cu}_{2}\hbox {Co}_{4}\hbox {NO}\) and \(\hbox {Cu}_{6}\hbox {CoNO}\) clusters have larger adsorption energies, indicating that NO of these clusters are more easily adsorbed. After adsorption, N–O bond is weakened and the activity is enhanced as a result of vibration frequency of N–O bond getting lower than that of a single NO molecule. \(\hbox {Cu}_{2}\hbox {CoNO}\), \(\hbox {Cu}_{3}\hbox {CoNO}\), \(\hbox {Cu}_{2}\hbox {Co}_{2}\hbox {NO}\), \(\hbox {Cu}_{3}\hbox {Co}_{3}\hbox {NO}\) and \(\hbox {Cu}\hbox {Co}_{5}\hbox {NO}\) clusters are more stable than their neighbours, while CuCoNO, \(\hbox {Co}_{3}\hbox {NO}\), \(\hbox {Cu}_{3}\hbox {CoNO}\), \(\hbox {Cu}_{2}\hbox {Co}_{3}\hbox {NO}\), \(\hbox {Cu}_{3}\hbox {Co}_{3}\hbox {NO}\) and \(\hbox {Cu}_{6}\)CoNO clusters display stronger chemical stability. Magnetic and electronic properties are also discussed. The magnetic moment is affected by charge transfer and the spd hybridization.     

Sn-adopted fullerene $$(\hbox {C}_{60})$$ nanocage as acceptable catalyst for silicon monoxide oxidation

In recent years, the discovery of metal catalysts for the oxidation of silicon monoxide (SiO) has become extremely important. In first step, the Sn adoption of fullerene (\(\hbox {C}_{60})\) was investigated and then activation of surface of \(\hbox {Sn-C}_{60}\) via \(\hbox {O}_{2}\) molecule was examined. In second step, the SiO oxidation on surface of \(\hbox {Sn-C}_{60}\) via Langmuir Hinshelwood (LH) and Eley Rideal (ER) mechanisms was investigated. Results show that \(\hbox {O}_{2}\hbox {-Sn-C}_{60}\) can oxidize the SiO molecule via \(\hbox {Sn-C}_{60}\hbox {-O-O}^{*} + \hbox {SiO}\rightarrow \hbox {Sn-C}_{60}\hbox {-O-O}^{*}\hbox {-SiO} \rightarrow \hbox {Sn-C}_{60}\hbox {-O}^{*} + \hbox {SiO}_{2}\) and \(\hbox {Sn-C}_{60}\hbox {-O}^{*} + \hbox {SiO}\rightarrow \hbox {Sn-C}_{60} + \hbox {SiO}_{2}\) reactions. Results show that SiO oxidation via the LH mechanism has lower energy barrier than ER mechanism. Finally, \(\hbox {Sn-C}_{60}\) is an acceptable catalyst with high performance for SiO oxidation in normal temperature.     

Superconducting epitaxial $$\hbox {YBa}_{2}\hbox {Cu}_{3}\hbox {O}_{7-\delta }$$ on $$\hbox {SrTiO}_{3}$$SrTiO3-buffered Si(001)

Thin films of optimally doped(001)-oriented \(\hbox {YBa}_{2}\hbox {Cu}_{3}\hbox {O}_{7-\updelta }\) are epitaxially integrated on silicon(001) through growth on a single crystalline \(\hbox {SrTiO}_{3}\) buffer. The former is grown using pulsed-laser deposition and the latter is grown on Si using oxide molecular beam epitaxy. The single crystal nature of the \(\hbox {SrTiO}_{3}\) buffer enables high quality \(\hbox {YBa}_{2}\hbox {Cu}_{3}\hbox {O}_{7-\updelta }\) films exhibiting high transition temperatures to be integrated on Si. For a 30-nm thick \(\hbox {SrTiO}_{3}\) buffer, 50-nm thick \(\hbox {YBa}_{2}\hbox {Cu}_{3}\hbox {O}_{7-\updelta }\) films that exhibit a transition temperature of \(\sim \)93 K, and a narrow transition width (<5 K) are achieved. The integration of single crystalline \(\hbox {YBa}_{2}\hbox {Cu}_{3}\hbox {O}_{7-\updelta }\) on Si(001) paves the way for the potential exploration of cuprate materials in a variety of applications.     

Emission of Gas and $$\hbox {Al}_{2}\hbox {O}_{3}$$ Smoke in Gas–Al Particle Deflagration: Experiments and Emission Modeling for Explosive Fireballs

Emission of gas and \(\hbox {Al}_{2}\hbox {O}_{3}\) smoke within the deflagration of \(\hbox {H}_{2}{-}\hbox {O}_{2}\)–{\(\hbox {N}_{2}{-}\hbox {CO}_{2}\)}–Al particles has been studied in a closed combustion chamber at pressures of up to 18 bar and at gas temperatures of up to 3700 K. Measurements of radiance intensity were taken using a five wavelength pyrometer (0.660 \(\upmu \hbox {m}\), 0.850 \(\upmu \hbox {m}\), 1.083 \(\upmu \hbox {m}\), 1.260 \(\upmu \hbox {m}\), 1.481 \(\upmu \hbox {m}\)) and a grating spectrometer in the range (4.10 \(\upmu \hbox {m}\) to 4.30 \(\upmu \hbox {m}\)). In order to characterize the aluminum oxide smoke size and temperature, an inversion method has been developed based on the radiation transfer equation and using pyrometer measurements and thermochemical calculations of \(\hbox {Al}_{2}\hbox {O}_{3}\) smoke volume fractions. Temperatures in combustion gas have been determined using a method based on the assumed blackbody head of the 4.26 \(\upmu \hbox {m}\) \(\hbox {CO}_{2}\) emission line and on its spectral shift with pressure and temperature. For validation purpose, this method has been applied to measurements obtained when calibrated alumina particles are injected in a combustion chamber prior to gaseous deflagrations. This mathematical inversion method was developed to investigate explosive fireballs.     

Facile synthesis and characterization of rough surface $$\mathrm{V}_{2}\hbox {O}_{5}$$ nanomaterials for pseudo-supercapacitor electrode material with high capacitance

\(\hbox {V}_{2}\hbox {O}_{5}\) nanomaterials with rough surface were synthesized using commercial \(\hbox {V}_{2}\hbox {O}_{5}\), ethanol (EtOH) and \(\hbox {H}_{2}\hbox {O}\) as the starting materials by a simple hydrothermal route and combination of calcination. The electrochemical properties of \(\hbox {V}_{2}\hbox {O}_{5}\) nanomaterials as electrodes in a supercapacitor device were measured using cyclic voltammetry (CV) and galvanostatic charge–discharge (GCD) method. \(\hbox {V}_{2}\hbox {O}_{5}\) nanomaterials exhibit the specific capacitance of 423 F \(\hbox {g}^{-1}\) at the current density of 0.5 A \(\hbox {g}^{-1}\) and retain 327 F \(\hbox {g}^{-1}\) even at the high current density of 10 A \(\hbox {g}^{-1}\). The influence of the ratio of \(\hbox {EtOH/H}_{2}\hbox {O}\), the calcined time and temperature on the morphology, purity and electrochemical property of the products is discussed in detail. The results revealed that the ratio of \(\hbox {EtOH}\hbox {/}\hbox {H}_{2}\hbox {O}= 10\hbox {/}25\) and calcination at \(400{^{\circ }}\hbox {C}\) for 2–4 h are favourable for preparing \(\hbox {V}_{2}\hbox {O}_{5}\) nanomaterials and they exhibited the best electrochemical property. The novel morphology and high specific surface area are the main factors that contribute to high electrochemical performance of \(\hbox {V}_{2}\hbox {O}_{5}\) nanomaterials during the charge–discharge processes. It turns out that \(\hbox {V}_{2}\hbox {O}_{5}\) nanomaterials with rough surface is an ideal material for supercapacitor electrode in the present work.     

Evaluation of the elastic properties of monovalent oxides using $$\hbox {TeO}_{2}$$-based glasses

Quaternary tellurite glasses with composition \(75\hbox {TeO}_{2}\)–\(5\hbox {WO}_{3}\)–\(15\hbox {Nb}_{2} \hbox {O}_{5}\)–\(5\hbox {M}_{x} \hbox {O}_{y}\) in mol%, where \(\hbox {M}_{x}\hbox {O}_{y}\) = (\(\hbox {Na}_{2}\hbox {O}, \, \hbox {Ag}_{2}\hbox {O}\), ZnO, MgO, CuO, NiO, \(\hbox {TiO}_{2}\), \(\hbox {MnO}_{2}\)), were prepared by the normal melt-quenching method. The ultrasonic velocities (longitudinal and shear) were measured in these glasses using the pulse-echo technique at room temperature. Their elastic moduli, microhardness and Debye temperature were calculated and discussed in terms of the modifier’s ionicity and quantitatively in terms of number of bonds per unit volume and the cross-link density. In this study, the values of ultrasonic velocities, elastic moduli, Debye temperature and microhardness were found to be strongly dependent on three factors, namely: (i) modifier’s ionicity; (ii) trigonal pyramid (\(\hbox {TeO}_{3}\))/trigonal bipyramid (\(\hbox {TeO}_{4}\)) ratio; and (iii) glass transition temperature \(T_\mathrm{g}\). We used the Makishima and Mackenzie’s model to calculate the theoretical elastic moduli and to indicate that the experimental values were in good agreement with the theoretical values.     

Microwave dielectrics: solid solution,ordering and microwave dielectric properties of $$(1{-}x)\hbox {Ba}(\hbox {Mg}_{1/3}\hbox {Nb}_{2/3})\hbox {O}_{3}{-}x\hbox {Ba(Mg}_{1/8}\hbox {Nb}_{3/4})\hbox {O}_{3}$$ ceramics

The effect of Ba(\(\hbox {Mg}_{1/8}\hbox {Nb}_{3/4})\hbox {O}_{3}\) phase on structure and dielectric properties of \(\hbox {Ba(Mg}_{1/3}\hbox {Nb}_{2/3})\hbox {O}_{3}\) was studied by synthesizing \((1{-}x)\hbox {Ba(Mg}_{1/3}\hbox {Nb}_{2/3})\hbox {O}_{3}{-}x\hbox {Ba}(\hbox {Mg}_{1/8}\hbox {Nb}_{3/4})\hbox {O}_{3}\) (\(x = 0\), 0.005, 0.01 and 0.02) ceramics. Superlattice reflections due to 1:2 ordering appear as low as \(1000^{\circ }\hbox {C}\). \(\hbox {Ba}(\hbox {Mg}_{1/3}\hbox {Nb}_{2/3})\hbox {O}_{3}\) forms solid solution with \(\hbox {Ba}(\hbox {Mg}_{1/8}\hbox {Nb}_{3/4})\hbox {O}_{3}\) for all ‘x’ values studied until \(1350^{\circ }\hbox {C}\). Ordering was confirmed by powder X-ray diffraction pattern, Raman study and HRTEM. Ceramic pucks can be sintered to density \({>}92\%\) of theoretical density. Temperature and frequency-stable dielectric constant and nearly zero dielectric loss (tan \(\delta \)) were observed at low frequencies (20 MHz). The sintered samples exhibit dielectric constant (\(\varepsilon _{\mathrm{r}})\) between 30 and 32, high quality factor between 37000 and 74000 GHz and temperature coefficient of resonant frequency (\(\tau _{\mathrm{f}})\) between 21 and \(24\hbox { ppm }^{\circ }\hbox {C}^{-1}\).     

Synthesis of $$\hbox {Ag}_{2}\hbox {Se}$$–graphene–$$\hbox {TiO}_{2} $$TiO2 nanocomposite and analysis of photocatalytic activity of $$\hbox {CO}_{2}$$CO2 reduction to $$\hbox {CH}_{3}\hbox {OH}$$CH3OH

The present work deals with the development of a new ternary composite, \(\hbox {Ag}_{2}\hbox {Se}\)–\(\hbox {G}\)–\(\hbox {TiO}_{2}\), using ultrasonic techniques as well as X-ray diffraction (XRD), scanning electron microscopy (SEM), high transmission electron microscopy (HTEM), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy and UV–Vis diffuse reflectance spectra (DRS) analyses. The photocatalytic potential of nanocomposites is examined for \(\hbox {CO}_{2}\) reduction to methanol under ultraviolet (UV) and visible light irradiation. \(\hbox {Ag}_{2}\hbox {Se}\)–\(\hbox {TiO}_{2}\) with an optimum loading graphene of 10 wt% exhibited the maximum photoactivity, obtaining a total \(\hbox {CH}_{3}\hbox {OH}\) yield of 3.52 \(\upmu \hbox {mol}\,\hbox {g}^{-1}\,\hbox {h}^{-1}\) after 48 h. This outstanding photoreduction activity is due to the positive synergistic relation between \(\hbox {Ag}_{2}\hbox {Se}\) and graphene components in our heterogeneous system.     

Electrical and Thermal Characteristics of the Insulator–Metal Transition in Crystalline $$\hbox {V}_{2}\hbox {O}_{5}$$ Films

The electrical and thermal properties with respect to the crystallization in \(\hbox {V}_{2}\hbox {O}_{5}\) thin films were investigated by measuring the resistance at different temperatures and applied voltages. The changes in the crystal structure of the films at different temperatures were also explored using Raman measurements. The thermal diffusivity of the crystalline \(\hbox {V}_{2}\hbox {O}_{5}\) film was measured by the nanosecond thermoreflectance method. The microstructures of amorphous and crystalline \(\hbox {V}_{2}\hbox {O}_{5}\) were observed by SEM and XRD measurements. The temperature-dependent Raman spectra revealed that a structural phase transition does not occur in the crystalline film. The resistance measurements of an amorphous film indicated semiconducting behavior, whereas the resistance of the crystalline film revealed a substantial change near \(250\,{^{\circ }}\hbox {C}\), and Ohmic behavior was observed above \(380\,{^{\circ }}\hbox {C}\). This result was due to the metal–insulator transition induced by lattice distortion in the crystalline film, for which \(T_{\mathrm{c}}\) was \(260\,{^{\circ }}\hbox {C}\). \(T_{\mathrm{c}}\) of the film decreased from 260 \({^{\circ }}\hbox {C}\) to \(230\,{^{\circ }}\hbox {C}\) with increasing applied voltage from 0 V to 10 V. Furthermore, the thermal diffusivity of the crystalline film was \(1.67\times 10^{-7}\,\hbox {m}^{2}\cdot \hbox {s}^{-1}\) according to the nanosecond thermoreflectance measurements.     

Strain-induced structural,magnetic and ferroelectric properties of heterostructure BST–NZFO nanocomposite thin film at room temperature

Heterostructure \(\hbox {Ba}_{0.7}\hbox {Sr}_{0.3}\hbox {TiO}_{3}\)–\(\hbox {Ni}_{0.8}\hbox {Zn}_{0.2}\hbox {Fe}_{2}\hbox {O}_{4}\) composite thin films grown on Pt–\(\hbox {TiO}_{2}\)–\(\hbox {SiO}_{2}\)–\(\hbox {Si}\) substrate were prepared by chemical solution process, where \(\hbox {Ba}_{0.7}\hbox {Sr}_{0.3}\hbox {TiO}_{3}\) layer grew as top/bottom while \(\hbox {Ni}_{0.8}\hbox {Zn}_{0.2}\hbox {Fe}_{2}\hbox {O}_{4}\) layer grew as bottom/top. Structural characterization by X-ray diffraction and atomic force microscopy showed the similar crystal structure, different lattice parameters, large lattice strain and small grain size in heterostructures, whatever their deposition sequences. Such heterostructures present simultaneously ferromagnetic and ferroelectric responses at room temperature. In particular, an exceptionally large saturation magnetization was observed in one heterostructures film. The growth sequences of \(\hbox {Ba}_{0.7}\hbox {Sr}_{0.3}\hbox {TiO}_{3}\) and \(\hbox {Ni}_{0.8}\hbox {Zn}_{0.2}\hbox {Fe}_{2}\hbox {O}_{4}\) layers on the substrate remarkably affect the magnetic properties of the composite thin films at room temperature.     

Radiative Properties of Ceramic $$\hbox {Al}_{2}\hbox {O}_{3}$$, AlN and $$\hbox {Si}_{3}\hbox {N}_{4}$$Si3N4—II: Modeling

In Part I of this study (Cheng et al. in Int J Thermophys 37: 62, 2016), the reflectance and transmittance of dense ceramic plates were measured at wavelengths from 0.4 \(\upmu \hbox {m}\) to about 20 \(\upmu \hbox {m}\). The samples of \(\hbox {Al}_{2}\hbox {O}_{3}\) and AlN are semitransparent in the wavelength region from 0.4 \(\upmu \hbox {m}\) to about 7 \(\upmu \hbox {m}\), where volume scattering dominates the absorption and scattering behaviors. On the other hand, the \(\hbox {Si}_{3}\hbox {N}_{4}\) plate is opaque in the whole wavelength region. In the mid-infrared region, all samples show phonon vibration bands and surface reflection appears to be strong. The present study focuses on modeling the radiative properties and uses an inverse method to obtain the scattering and absorption coefficients of \(\hbox {Al}_{2}\hbox {O}_{3}\) and AlN in the semitransparent region from the measured directional-hemispherical reflectance and transmittance. The scattering coefficient is also predicted using Mie theory for comparison. The Lorentz oscillator model is applied to fit the reflectance spectra of AlN and \(\hbox {Si}_{3}\hbox {N}_{4}\) from 1.6 \(\upmu \hbox {m}\) to 20 \(\upmu \hbox {m}\) in order to obtain their optical constants. It is found that the phonon modes for \(\hbox {Si}_{3}\hbox {N}_{4}\) are much stronger in the polycrystalline sample studied here than in amorphous films reported previously.     

Effects of electrolyte concentration and current density on the properties of electro-deposited NiFeW alloy coatings

NiWP alloy coatings were prepared by electrodeposition, and the effects of ferrous chloride (\(\hbox {FeCl}_{2})\), sodium tungstate (\(\hbox {Na}_{2}\hbox {WO}_{4})\) and current density (\(D_{\mathrm{K}}\)) on the properties of the coatings were studied. The results show that upon increasing the concentration of \(\hbox {FeCl}_{2}\), initially the Fe content of the coating increased and then tended to be stable; the deposition rate and microhardness of coating decreased when the cathodic current efficiency (\(\eta \)) initially increased and then decreased; and for a \(\hbox {FeCl}_{2}\) concentration of \(3.6\, \hbox {g\,l}^{-1}\), the cathodic current efficiency reached its maximum of 74.23%. Upon increasing the concentration of \(\hbox {Na}_{2}\hbox {WO}_{4}\), the W content and microhardness of the coatings increased; the deposition rate and the cathode current efficiency initially increased and then decreased. The cathodic current efficiency reached the maximum value of 70.33% with a \(\hbox {Na}_{2}\hbox {WO}_{4}\) concentration of 50 g \(\hbox {l}^{-1}\), whereas the deposition rate is maximum at 8.67 \(\upmu \hbox {m}\,\hbox {h}^{-1}\) with a \(\hbox {Na}_{2}\hbox {WO}_{4}\) concentration of \(40\, \hbox {g\,l}^{-1}\). Upon increasing the \(D_{\mathrm{K}}\), the deposition rate, microhardness, Fe and W content of the coatings increased, the cathodic current efficiency increases first increased and then decreased. When \(D_{\mathrm{K}}\) was 4 A dm\(^{-2}\), the current efficiency reached the maximum of 73.64%.     

Elastic and thermodynamic properties of zirconium- and hafnium-doped $$\hbox {Rh}_{3}\hbox {V}$$ intermetallic compounds: potential aerospace material

Structural, electronic, mechanical and thermodynamic properties of \(\hbox {Rh}_{3}\hbox {Zr}_{x}\hbox {V}_{1-x}\) and \(\hbox {Rh}_{3}\hbox {Hf}_{x}\hbox {V}_{1-x}\) (\(x = 0\), 0.125, 0.25, 0.75, 0.875 and 1) combinations are investigated by means of first-principles calculations based on the density functional theory within the generalized gradient approximation. Here, \(\hbox {Rh}_{3}\hbox {V}\) is chosen as the parent binary compound and the doping elements are zirconium and hafnium with the above-mentioned concentrations. The calculated lattice parameters and elastic modulus of binary \(\hbox {Rh}_{3}\hbox {Hf}\), \(\hbox {Rh}_{3}\hbox {V}\) and \(\hbox {Rh}_{3}\hbox {Zr}\) are in good agreement with the available experimental and other theoretical results. In this study, the following ternary materials viz., \(\hbox {Rh}_{3}\hbox {Zr}_{0.75}\hbox {V}_{0.25}\), \(\hbox {Rh}_{3}\hbox {Hf}_{0.25}\hbox {V}_{0.75}\) and \(\hbox {Rh}_{3}\hbox {Hf}_{0.75}\hbox {V}_{0.25}\) are found to be brittle/more brittle than the parent binary compound \(\hbox {Rh}_{3}\hbox {V}\), whereas the other ternary combinations, namely \(\hbox {Rh}_{3}\hbox {Zr}_{0.125}\hbox {V}_{0.875}\), \(\hbox {Rh}_{3}\hbox {Zr}_{0.25}\hbox {V}_{0.75}\), \(\hbox {Rh}_{3}\hbox {Zr}_{0.875}\hbox {V}_{0.125}\), \(\hbox {Rh}_{3}\hbox {Hf}_{0.125}\hbox {V}_{0.875}\) and \(\hbox {Rh}_{3}\hbox {Hf}_{0.875}\hbox {V}_{0.125}\) are found to be more ductile than \(\hbox {Rh}_{3}\hbox {V}\). The more brittle ternary combination, namely \(\hbox {Rh}_{3}\hbox {Hf}_{0.75}\hbox {V}_{0.25}\) (\(B = 229.32\,\hbox {GPa}\)) has the maximum Young’s modulus, shear modulus and hardness values; whereas the more ductile ternary \(\hbox {Rh}_{3}\hbox {Zr}_{0.25}\hbox {V}_{0.75}\) combination (\(B = 243.54\,\hbox {GPa}\)) is found to have the least values of Young’s modulus, shear modulus and hardness. The band structure, density of states histograms and charge density plots are drawn and discussed. Computed Debye temperature (\(\theta _{\mathrm{D}}\)), Grüneisen parameter (\(\zeta \)) and melting temperature (\(T_{\mathrm{m}})\) of the parent binary compound \(\hbox {Rh}_{3}\hbox {V}\), the more brittle \(\hbox {Rh}_{3}\hbox {Hf}_{0.75}\hbox {V}_{0.25}\) combination and the more ductile \(\hbox {Rh}_{3}\hbox {Zr}_{0.25}\hbox {V}_{0.75}\) combination are given by (895 K, 1.3491, 2788 K), (790 K, 1.2701, 2736 K) and (698 K, 1.7972, 2529 K), respectively.     

Resistance-switching properties of Bi-doped $$\hbox {SrTiO}_{3}$$ films for non-volatile memory applications with different device structures

\(\hbox {SrTiO}_{3}\) and Bi-doped \(\hbox {SrTiO}_{3}\) films were fabricated with different device structures using the sol–gel method for non-volatile memory applications, and their resistance-switching behaviour, endurance and retention characteristics were investigated. \(\hbox {SrTiO}_{3}\) and \(\hbox {Sr}_{0.92}\hbox {Bi}_{0.08}\hbox {TiO}_{3}\) films grown on Si or Pt have the same phase structure, morphologies and grain size; however, the grain size of the \(\hbox {Sr}_{0.92}\hbox {Bi}_{0.08}\hbox {TiO}_{3}\) films grown on Si is slightly larger than those of the \(\hbox {SrTiO}_{3}\) films grown on Si and the \(\hbox {Sr}_{0.92}\hbox {Bi}_{0.08}\hbox {TiO}_{3}\) films grown on Pt. The \(\hbox {SrTiO}_{3}\) or \(\hbox {Sr}_{0.92}\hbox {Bi}_{0.08}\hbox {TiO}_{3}\) films grown on Si or Pt all exhibit bipolar resistive-switching behaviour and follow the same conductive mechanism; however, the \(\hbox {Ag}/\hbox {Sr}_{0.92}\hbox {Bi}_{0.08}\hbox {TiO}_{3}/\hbox {Si}\) device possesses the highest \(R_{\mathrm{HRS}}{/}R_{\mathrm{LRS}}\) of \(10^{5}\) and the best endurance and retention characteristics. The doping of Bi is conducive to enhance the \(R_{\mathrm{HRS}}{/}R_{\mathrm{LRS}}\) of the \(\hbox {SrTiO}_{3}\) films; meanwhile, the Si substrates help improve the endurance and retention characteristics of the \(\hbox {Sr}_{0.92}\hbox {Bi}_{0.08}\hbox {TiO}_{3}\) films.     

Distribution of relaxation times investigation of $$\hbox {Co}^{3+}$$ doping lithium-rich cathode material $$\hbox {Li}[\hbox {Li}_{0.2} \hbox {Ni}_{0.1} \hbox {Mn}_{0.5} \hbox {Co}_{0.2}]\hbox {O}_{2}$$Li[Li0.2Ni0.1Mn0.5Co0.2]O2

The element \(\hbox {Co}^{3+}\) was introduced into lithium-rich material \(0.5\hbox {Li}_{2}\hbox {MnO}_{3} \cdot 0.5 \hbox {LiNi}_{0.5}\hbox {Mn}_{0.5}\hbox {O}_{2}\) by a polyacrylamide-assisted sol–gel method to form \(\hbox {Li}[\hbox {Li}_{0.2} \hbox {Ni}_{0.1} \hbox {Mn}_{0.5} \hbox {Co}_{0.2}]\hbox {O}_{2}\) and better electro-chemical performances were observed. Electrochemical impedance spectroscopy spectra were measured on 11 specific open circuit voltage levels on the initial charge profile. Then they were converted to the distribution of relaxation times (DRTs) g(\(\tau \)) by self-consistent Tikhonov regularization method. The obtained DRTs offered a higher resolution in the frequency domain and provided the number and the physical origins of loss processes clearly. Through the analysis of DRTs, the rapid augmentation of resistance to electronic conduction and charge transfer within the voltage range 4.46–4.7 V where the removal of \(\hbox {Li}_{2}\hbox {O}\) from \(\hbox {Li}_{2} \hbox {MnO}_{3}\) component took place was the most remarkable phenomenon and the \(\hbox {Co}^{3+}\) doping greatly reduced the resistance to electronic conduction Re. This gave us more evidence about the complicated ‘structurally integrated’ composite character of the material.     

Predicting $$\hbox {CO}_{2}$$ Solubility in Imidazole Ionic Liquids for Use in Absorption Refrigeration Systems by Using the Group Contribution Equation of State Method

Traditional absorption refrigeration such as \(\hbox {H}_{2}\hbox {O}\)–LiBr- and \(\hbox {NH}_{3}\)–\(\hbox {H}_{2}\hbox {O}\)-based refrigeration has limited applications because of several issues, including crystallization, corrosion, and large volume. \(\hbox {CO}_{2}\)–ionic liquids (ILs) as new absorption working pairs were investigated in this study. The objective was to use the group contribution equation of state (GC-EOS) method to predict the solubilities of binary systems containing high-pressure \(\hbox {CO}_{2}\)–imidazole bis(trifluoromethanesulfonimide) ILs and to investigate the applicability and accuracy of the GC-EOS model. The results showed that at pressures up to 11.0 MPa and temperatures of 273 K to 400 K, the \(\hbox {CO}_{2}\) solubility in the ILs increased with increasing system pressure but decreased with increasing temperature, and its variation rate was lower at higher pressures or temperatures. Also, \(\hbox {CO}_{2}\) solubility increased in the order of [emim][\(\hbox {Tf}_{2}\hbox {N}\)] < [bmim][\(\hbox {Tf}_{2}\hbox {N}\)] < [hmim][\(\hbox {Tf}_{2}\hbox {N}\)] < [omim][\(\hbox {Tf}_{2}\hbox {N}\)], indicating that longer alkyl chains of identical IL families resulted in higher \(\hbox {CO}_{2 }\) solubility. The model prediction of \(\hbox {CO}_{2}\) solubility in the four different ILs showed reasonable consistency with the corresponding experimental results from the literature; the largest deviation was 5.7 % for \(\hbox {CO}_{2}\)-[emim][\(\hbox {Tf}_{2}\hbox {N}\)]. Therefore, it can be concluded that the GC-EOS model is a promising theoretical solution that can be used to search for suitable \(\hbox {CO}_{2}\)–IL working pairs for absorption refrigeration systems.     

Role of reactive species in the photocatalytic degradation of amaranth by highly active N-doped $$\mathbf{WO}_{\mathbf{3}}$$

A novel, highly visible light active N-doped \(\hbox {WO}_{3}\) (\(\hbox {N}\)-\(\hbox {WO}_{3})\) is successfully synthesized via thermal decomposition of peroxotungstic acid–urea complex. The photocatalytic activity of \(\hbox {N}\)-\(\hbox {WO}_{3}\) is evaluated for the degradation of amaranth (AM) dye under visible and UVA light along with the role of reactive species, which has not yet been studied for \(\hbox {N}\)-\(\hbox {WO}_{3}\) photocatalysts. Doping of N into substitutional and interstitial sites of \(\hbox {WO}_{3}\) is confirmed by X-ray photoelectron spectroscopy and X-ray absorption near-edge spectroscopy. At a pH of 7, 1 g \(\hbox {l}^{-1}\) of \(\hbox {N}\)-\(\hbox {WO}_{3}\) can completely degrade \(10\,\hbox {mg } \hbox {l}^{-1}\) of AM within 1 h under visible and UVA light. For the degradation of AM by \(\hbox {N}\)-\(\hbox {WO}_{3}\) under visible and UVA light, \(\hbox {h}^{+}\) is found to be the main reactive species, while \(\cdot \hbox {OH}\) contributes to a lesser extent. On the contrary, \(^{1}\hbox {O}_{2}, \cdot \hbox {O}_{2}^{-}\) and \(\hbox {e}^{-}\) show negligible roles. The crucial role of \(\hbox {h}^{+}\) indicates effective suppression of electron–hole recombination after N doping. Dye sensitization and oxidation by reactive species are found to be the major pathway for the degradation of AM under visible and UVA light, respectively.     

Effect of annealing temperature and $$\hbox {CdCl}_{2}$$ treatment on the photo-conversion efficiency of $$\hbox {CdTe/Zn}_{0.1}$$CdTe/Zn0.1$$\hbox {Cd}_{0.9}$$Cd0.9S thin film solar cells

We report the effects of annealing in conjunction with \(\hbox {CdCl}_{2}\) treatment on the photovoltaic properties of \(\hbox {CdTe/Zn}_{0.1}\hbox {Cd}_{0.9}\)S thin film solar cells. CdTe layer is subjected to dry \(\hbox {CdCl}_{2}\) treatment by thermal evaporation method and subsequently, heat treated in air using a tube furnace from 400 to \(500{^{\circ }}\hbox {C}\). AFM and XRD results show improved grain size and crystallographic properties of the CdTe film with dry \(\hbox {CdCl}_{2}\) treatment. This recrystallization and grain growth of the CdTe layer upon \(\hbox {CdCl}_{2}\) treatment translates into improved photo-conversion efficiencies of \(\hbox {CdTe/Zn}_{0.1}\hbox {Cd}_{0.9}\)S cell. The results of dry \(\hbox {CdCl}_{2}\) treatment were compared with conventional wet \(\hbox {CdCl}_{2}\) treatment. Photo-conversion efficiency of 5.2% is achieved for dry \(\hbox {CdCl}_{2}\)-treated cells in comparison with 2.4% of wet-treated cell at heat treatment temperature of \(425{^{\circ }}\hbox {C}\).     

Radiative Properties of Ceramic $$\hbox {Al}_{2}\hbox {O}_{3}$$, AlN,and $$\hbox {Si}_{3}\hbox {N}_{4}$$Si3N4: I. Experiments

The radiative properties of dense ceramic \(\hbox {Al}_{2}\hbox {O}_{3}\), AlN, and \(\hbox {Si}_{3}\hbox {N}_{4}\) plates are investigated from the visible to the mid-infrared region at room temperature. Each specimen has different surface finishings on different sides of the laminate. A monochromator was used with an integrating sphere to measure the directional-hemispherical reflectance and transmittance of these samples at wavelengths from 0.4 \(\upmu \hbox {m}\) to 1.8 \(\upmu \hbox {m}\). The specular reflectance was obtained by a subtraction technique. A Fourier-transform infrared spectrometer was used to measure the directional-hemispherical or specular reflectance and transmittance with appropriate accessories from about 1.6 \(\upmu \hbox {m}\) to 19 \(\upmu \hbox {m}\). All measurements were performed at near-normal incidence on either the smooth side or the rough side of the sample. The experimental observations are qualitatively interpreted considering the optical constants, surface roughness, and volume scattering and absorption.