多铁性陶瓷BiFeO_3-PbTiO_3-BaTiO_3的介电、压电及其老化性能研究

采用高温固相法制备了钙钛矿结构的0.7BiFeO_3-0.2PbTiO_3-0.1BaTiO_3陶瓷,研究了该陶瓷的介电性能、压电性能及其老化性能。结果表明,该陶瓷是一种非常有潜力的高温压电陶瓷,其介电常数和介电损耗分别为390和0.015,铁电居里温度TC约为600℃,压电常数d_(33)约为100 pC/N,压电常数的时间稳定性和热稳定性好,热退极化温度Td约为500℃。压电常数热退极化机理主要为内在的剩余极化老化,辅以低浓度氧空位等外在缺陷对畴壁的钉扎作用。     

Mn掺杂对0.7BiFeO3-0.3PbTiO3薄膜铁电性能的影响

利用溶胶-凝胶法在La Ni O3/Si O2/Si衬底上制备了掺Mn量为0%、1%、5%、10%(质量分数)的0.7Bi Fe O3-0.3Pb Ti O3(BFMPT7030/x,x=0,0.01,0.05,0.1)薄膜。XRD测试表明,薄膜均完全结晶,呈现高度(100)择优取向。通过对薄膜晶体结构分析,发现BFMPT7030/0.05薄膜具有最小的晶粒尺寸(258 nm)及最小的晶胞体积(61.25×10-3 nm3)。SEM测试结果显示样品晶粒生长充分,晶粒尺寸在150~300 nm之间。铁电性能测试结果表明,当Mn含量为5%时,铁电性能较好,电滞回线形状最好,最为饱和。漏电流测试结果表明随着掺Mn量增加,BFMPT7030薄膜的漏电流随电场增大而增加的趋势减弱。     

化学液相法制备BiFeO3薄膜

以硝酸铋、硝酸铁以及柠檬酸为原料通过化学液相法在普通载玻片、（100）Si片和（100）ITO玻璃上分别制备了不同厚度的BiFeO3薄膜，研究了热处理温度对BiFeO3的形成以及微观形貌的影响。Si片上的薄膜由于与衬底之间的反应，得到纯BiFeO3相热处理温度需低于650℃，而在普通载玻片和ITO玻璃衬底上，525℃到650℃均可以得到结晶良好的纯BiFeO3薄膜。550℃热处理得到的BiFeO3薄膜中的晶粒尺寸大约在70～80nm之间，650℃热处理得到的晶粒尺寸约有140nm。磁性能测试证明薄膜有弱铁磁性，饱和磁化强度约在7000-9000A／m。     

化学液相法制备BiFeO3薄膜

以硝酸铋、硝酸铁以及柠檬酸为原料通过化学液相法在普通载玻片、(100)Si片和(100)ITO玻璃上分别制备了不同厚度的BiFeO3薄膜,研究了热处理温度对BiFeO3的形成以及微观形貌的影响.Si片上的薄膜由于与衬底之间的反应,得到纯BiFeO3相热处理温度需低于650℃,而在普通载玻片和ITO玻璃衬底上,525℃到650℃均可以得到结晶良好的纯BiFeO3薄膜.550℃热处理得到的BiFeO3薄膜中的晶粒尺寸大约在7080 nm之间,650℃热处理得到的晶粒尺寸约有140 nm.磁性能测试证明薄膜有弱铁磁性,饱和磁化强度约在7000～9000 A/m.     

MgO基外延BiFeO3薄膜的结构和铁电光伏性能

目的 深入研究BiFeO3(BFO)薄膜的结晶结构、生长取向及测试温度对其介电和铁电光伏性能的影响。方法 采用偏轴磁控溅射法,分别以单晶(001)MgO基片和外延La0.5Sr0.5CoO3(LSCO)薄膜作为衬底与底电极,构架Pt/BFO/LSCO/MgO异质结构的铁电电容器。采用XRD衍射仪表征LSCO和BFO薄膜的结构与生长取向,探究Pt/BFO/LSCO/MgO异质结构电容器的介电和铁电光伏性能,重点研究测试温度对其性能的综合影响。结果 X射线衍射(XRD)和Phi扫描结果表明,MgO基BFO与LSCO薄膜均为结晶良好的钙钛矿结构,且满足(00l)取向的外延生长。不同电压和频率下的介电测试表明,BFO铁电薄膜具有较强的铁电性,正负矫顽电压分别为3.36、–1.12 V,但存在明显的介电色散现象,呈现先减小、后增大的趋势。在~100 kHz时,介电损耗最小,为0.016;在8 MHz时,增加到了0.212。这主要由于不同频率下各种类型电荷的弛豫竞争机制所致。光伏性能测试表明,在室温(20 ℃)、光强250 mW/cm²紫光垂直照射下,开路电压(VOC)和短路电流(JSC)分别为0.32 V和0.21 mA/cm²。进一步提高测试温度(分别为40、60、80、100 ℃)发现,BFO铁电薄膜VOC呈先缓慢、后快速减小,而JSC呈先快速上升、后下降的趋势,并在临界温度80 ℃处展现了更快的光伏响应速度,VOC和JSC分别为0.30 V和0.96 mA/cm²。能带分析表明,底电极LSCO与上电极Pt间大的功函数差(~1 eV)使得BFO薄膜中存在较强的内建电场,这有利于分离光生载流子,从而极大提高了BFO薄膜的铁电光伏效应。结论 BFO是一种具有重要潜在应用价值的优良环保光伏候选材料,提供了一种提高BFO铁电光伏器件性能的切实可行策略。     

Structural characteristics of BaTiO3 films prepared by microarc oxidation

1 Introduction BaTiO3, with a relatively large dielectric constant and unusual electro-optical coefficient, has been widely used in the electronics industry. BaTiO3 ferroelectric films have been proposed for applications such as thin film capacitors, pyro…     

Effect of crystallization temperature on microstructure and ferroelectric property of Bi3.25 Eu0.75 Ti3O12 thin films prepared by MOD method

1 Introduction Many researches have been done on candidates in ferroelectric material for non-volatile random access memories applications. Among them, lead zirconate titanate(PZT) thin films have been widely studied because they have many advantages such…     

氮化碳薄膜的电子结构和光学性质

在不同条件下用射频溅射方法制备了氮化碳薄膜。薄膜的电子结构和元素成分用傅里叶变换红外光谱(FTIR)和光电子能谱 (XPS)进行分析 ,薄膜的光学性质用紫外可见近红外光谱 (UV)进行检测。薄膜中的最大氮原子含量达到 0 .4 7,C1s和N1s电子的结合能产生了 2 .4 1～ - 1.7eV的移动 ,移动的大小取决于制备条件。UV谱表明氮化碳薄膜能强烈地吸收紫外光 ,而对红外光有较好的透明性 ,在 2 72 0nm附近存在一明锐的吸收峰 ,并给出了形成这一明锐吸收峰的适宜条件。这些结果对作为保护光学涂层的红外应用是有意义的。     

磁控溅射法制备SnS薄膜的结构和光学性能

利用磁控溅射法在FTO玻璃上制备了Sn S薄膜。采用X射线衍射仪、扫描电子显微镜和紫外可见分光光度计对不同溅射参数下制备的Sn S薄膜的晶体结构、表面形貌和光学性能进行研究,确定出制备Sn S薄膜的最优溅射参数。结果表明:溅射功率为28 W,沉积气压在2.5 Pa时,制备出的Sn S薄膜在(111)晶面具有最好的择优取向,薄膜微观形貌呈单片树叶状,晶粒粒径约370 nm,晶粒分布均匀,薄膜表面光滑致密;最优溅射参数下制备的Sn S薄膜的吸收系数可达到105cm-1,比其他方法制备的Sn S薄膜的吸收系数值高,禁带宽度为1.48 e V,与半导体太阳能电池所要求的最佳禁带宽度(1.5 e V)十分接近。     

Microstructure and magnetic properties of NiZn ferrite thin films prepared by sol-gel method

Ti^4＋ substitution for Fe^3＋ in Ni0.5Zn0.5Fe2O4 （NZF） ferrite thin films were realized by sol-gel method and annealing at 600℃for 30 min in the air. Crystal structure and lattice constant determination was performed by X-ray diffractometer （XRD）. Surface microstructure was observed by scanning electron microscope （SEM） and atomic force microscope （AFM）, and the magnetic properties were measured by vibrating sample magnetometer （VSM）. XRD analyses of the samples show that Ni0.5＋xZn0.5TixFe2-2xO4 （NZTF） films with x varing from 0 to 0.15 in steps of 0.05 are composed of single phase with spinel structure. And the lattice parameter, particle size and the diffraction intensity of the films increase with substitution of Ti as the result of the larger radius ions entering the lattice. SEM and AFM show homogeneous grain size of each sample, but there is a few differences in grain size with different Ti-substitution contents. As the nonmagnetic Ti^4＋ substitutes Fe^3＋, both the saturation magnetization and coercivity decrease.     

Effect of substrate temperature on microstructures and dielectric properties of compositionally graded BST thin films

Compositionally graded Ba1-xSrxTiO3 （BST） （x = 0-0.3） thin films were prepared on Pt/Ti/SiO2/Si substrate at different substrate temperatures ranging from 550 ℃ to 650 ℃ by radio-frequency （rf） magnetron sputtering. The effect of substrate temperature on the preferential orientation, microstructures and dielectric properties of compositionally graded BST thin films was investigated by X-ray diffraction, scanning electron microscopy and dielectric frequency spectra, respectively. As the temperature increases, the preferential orientation evolves in the order： randomly orientation→ （111） → highly oriented （111） （α（111）= 60.2%）. The surface roughness of the graded BST thin films varies with the substrate temperatures. No visible internal interface in the compositionally graded thin films can be observed in the cross-sectional SEM images. The graded BST thin films deposited at 650 ℃ possess the highest dielectric constant and dielectric loss, which are 408 and 0.013, respectively.     

Preparation of BiFeO3 solution and its movement effects controlled by electrical field

This paper demonstrated our discovery of the movement effect of BiFeO3 nanoparticles in solution by strong electrical polarization.First,BiFeO3 nanoparticles were prepared by ball milling and characterized by SEM.Then,the preparation of BiFeO3 solution was finished.BiFeO3 nanoparticles are found to move in solution due to electrical field.The movement velocity ofBiFeO3 nanoparticles,which is about 10 μm·s-1,is influenced and controlled by the applied electrical field.The concentration of BiFeO3 solution and the nanoparticle sizes also have effects on its movement properties.The movement of BiFeO3 nanoparticles in solution is induced by strong polarization,and BiFeO3 nanoparticles have net negative electric charges because of the electrostatic force between BiFeO3 nanoparticles and the negative ions in water resolver.     

MgO掺杂对BaSrTiO3介质陶瓷性能的影响

通过实验，研究了MgO掺杂对BaSrTiO3陶瓷介电性能的影响和机理。观察了样品的微观形貌，讨论了氧化镁在调整Ba1-xSrxTiO3铁电陶瓷的介电．温度特性的作用。结果表明，氧化镁掺杂对Ba1-xSrxTiO3系介质陶瓷产生了压峰和移峰作用。借助扫描电镜对所制得的样品进行了分析，氧化镁掺杂使Ba1-xSrxTiO3系介质陶瓷的结构细晶化。以实验结果和微观结构分析为依据探讨了氧化镁掺杂改性作用的机理。     

BaTiO3铁电薄膜的研究进展

本文综述了近年来BaTiO3铁电薄膜的研究进展,就BaTiO3薄膜的制备方法、性能及其影响因素,深入分析了BaTiO3薄膜制备技术的优、缺点,展望了其应用前景.     

Photoluminescence properties of ZnSe/SiO2 composite thin films prepared by sol-gel method

ZnSe/SiO2 composite thin films was prepared by sol-gel method. XRD results indicate the phase structure of ZnSe particles embedded in ZnSe/SiO2 composite thin films is sphalerite （cubic ZnS）. Spectroscopic ellipsometers were used to investigated the dependences of ellipsometric angle with wavelength of ZnSe/SiO2 composite thin films. The optical constant, thickness, porosity and the concentration of ZnSe of ZnSe/SiO2 thin composite films were fitted according to Maxwell-Garnett effective medium theory. The thickness of ZnSe/SiO2 composite thin thin films was also measured through surface profile. The photoluminescence properties of ZnSe/SiO2 thin composite thin films was investigated through fluorescence spectrometer. The photoluminescence results show that the emission peak at 487 nm （2.5 eV） is excited at 395 nm corresponds to the band-to-band emission of sphalerite ZnSe crystal（2.58 eV）. The strength free exciton emission and other emission peaks correlating to ZnSe lattice defect were also observed.     

The effect of film composition on the structure and mechanical properties of NiTi shape memory thin films

Shape memory NiTi-based thin films approximately 2 μm thick were deposited onto Si (100) substrates at room temperature by simultaneous DC magnetron sputter deposition from separate elemental Ni and Ti targets. The effect of composition on film structure, surface morphology, transformation temperature and mechanical behavior was studied using variable temperature X-ray diffraction, atomic force microscopy, electrical resistivity, and nanoindentation. The films showed the expected shape memory and superelasticity behavior corresponding to the different film compositions, comparable with bulk properties. The transformation from the low temperature martensitic phase to the high temperature parent phase takes place above room temperature in Ti-rich and near-equiatomic films, and below room temperature in Ni-rich films. Mechanical properties of films investigated at room temperature by a series of nanoindentations at mN loads (indentation depth < 200 nm) with a spherical indenter demonstrate superelasticity in Ni-rich material and martensitic deformation for Ti-rich and near-equiatomic compositions.     

Surface morphology and photoluminescence properties of ZnO thin films obtained by PLD

ZnO thin films on Si(111) substrate were deposited by laser ablation of Zn target in oxygen reactive atmosphere, Nd-YAG laser with wavelength of 1 064 nm was used as laser source. XRD and FESEM microscopy were applied to characterize the structure and surface morphology of the deposited ZnO films. The optical properties of the ZnO thin films were characterized by photoluminescence. The UV and deep level (yellow-green) light were observed from the films. The UV light is the intrinsic property and deep level light is attributed to the existence of antisite defects (Ozn). The intensity of UV and deep level light depends strongly on the surface morphology and is explained by the surface roughness of ZnO film. A strongly UV emission can be obtained from ZnO film with surface roughness in nanometer range.     

Preparation of BiFeO3 thin films by pulsed laser deposition method

BiFeO3 （BFO） thin films were prepared on Pt（111）/TiO2/SiO2/Si（100） substrates by the pulsed-laser deposition （PLD） technique at a low temperature of 450℃. The XRD results indicate that the BFO thin films are of perovskite structure with the presence of small amount of second phases. The oxygen pressures have great effect on the crystalline structures and dielectric properties of BFO thin films. The dielectric constant of the BFO thin films decreases with increasing oxygen pressures, achieving 186, 171 and 160 at the frequency of 104 Hz for the oxygen pressures of 0.666, 1.333 and 13.332 Pa, respectively. The BFO thin films prepared at the oxygen pressure of 0.666 Pa reveal a saturated hysteresis loop with the remanent polarization of 7.5 ℃/cm^2 and the coercive field of 176 kV/cm.     

非平衡磁控溅射离子镀Cu-Nb纳米晶薄膜的微观结构及性能

研究了Nb含量对纳米晶Cu-Nb薄膜微观结构和性能的影响。使用非平衡磁控溅射离子镀技术,在具有(100)晶面的单晶Si基体和玻璃基体上制备不同Nb含量的Cu-Nb纳米晶薄膜,研究Nb含量对纳米晶Cu-Nb薄膜微观结构和性能的影响。将样品置于卧式真空退火炉中进行400 ℃退火,用配备了能量色散X射线光谱仪的场发射扫描电镜、原子力显微镜、X射线衍射仪、纳米压痕仪和四探针电阻率测试仪等分析了退火前后薄膜的微观结构、力学性能与电学性能。结果表明,沉积态Cu-Nb薄膜表面由致密的纳米晶组成,表面粗糙度最高仅为8.54 nm,且无明显的孔洞和裂纹等缺陷。随着Nb含量的增加,薄膜的平均晶粒尺寸下降5 nm,薄膜的硬度也因细晶强化而有所增加,在靶电流为1.3 A时达到最大值4.9 GPa。退火态样品在硬度、弹性模量、平均晶粒尺寸和表面粗糙度方面与沉积态薄膜相比有较小的变化,Cu-Nb薄膜表现出优良的热稳定性。Nb的加入可有效细化晶粒,达到细晶强化的效果,同时Cu-Nb不互溶的特性使得纳米晶薄膜在高温下也可保持较好的热稳定性。Nb靶溅射电流为0.5 A 时薄膜综合性能最佳,此时沉积态Cu-Nb薄膜的电阻率最低,为3.798×10^-7 Ω/m,硬度和弹性模量高达4.6 GPa和139.5 GPa,薄膜厚度为1050 nm,粗糙度R_a为4.70 nm。     

Influence of nitrogen gas on structure and properties of DLC films prepared by XeCl pulsed laser deposition

Diamond-like carbon （DLC） films were prepared by PLD process using 308 nm（XeCl） laser beam with high power （500 W） and high fi＇equency（300 Hz）. The effects of nitrogen pressure on the structure and properties of the DLC films under such extremely high power and repetition rate were studied. The results indicate that the microstructures of the films are varied fi＇om amorphous carbon to graphitized carbon in long-order with the increase of N2 pressure, and the optical properties of the films are deteriorated as compared to that of DLC films without nitrogen.