浅析RFID/EPC认证和在深推广应用

RFID/EPC技术是最有发展前途的信息技术之一,该文介绍了RFID/EPC以及EPC系统的概念,在此基础上浅析了RFID/EPC认证,并结合实际情况介绍了EPC技术在深圳的推广应用。     

高频RFID读写器射频模拟前端的实现

射频识别(RFID)系统主要由RFID读写器和RFID电子标签两部分组成.给出了高频(13.56MHz)RFID系统中读写器射频模拟前端的电路设计,符合ISO/IEC14443 type A/type B,ISO/IEC15693和ISO/IEC18000-3中任一个标准的读写器芯片设计均可采用,设计工艺采用了中芯国际0.35μm 2P3M混合CMOS技术,并给出了Cadence环境下的仿真结果.     

盛扬新推三款RFID产品——HT672A／672B／6740

盛扬半导体(HOLTEK)日前推出三款RFID tag新产品即HT672A/672B/6740。这三款RFID内存数据均为EPROM,用户可于生产过程自行烧入规划的产品码,同时所配合Reader线路完全相同,只对应不同功能、编号的RFID,Reader中的HOLTEK MCU程序必须作相对应的修改。 HT672A继承过去的HT6720性能,提升了RFID的识别反应速度与     

ISO/IEC 18000-6C简析

介绍了RFID技术,以及ISO/IEC 18000-6系列等RFID技术UHF频段标准的发展、完善历程,重点分析了ISO/IEC 18000-6中A、B、C三种模式的优缺点,针对中国UHF频段的标准制定提出了技术和应用层面的建议.     

国际RFID技术标准研究系列报道（三） 移动RFID系统架构及标准体系研究

从通信模型、服务实体和系统功能三个方面分析了移动RFiD系统,介绍了ISO/IEC移动RFID标准体系及其进展状况,并对我国RFID标准的制定提出建议.     

基于自适应卡尔曼滤波的RFID/SINS组合导航研究

在室内导航定位中,射频识别(Radio Frequency Identification, RFID)技术具有信号穿透性强、成本低廉等诸多优点,能够有效代替GPS完成室内组合导航。针对室内惯性导航误差发散和滤波中噪声参数不确定的问题,提出了基于自适应卡尔曼滤波(Adaptive Kalman Filtering, AKF)的RFID/SINS组合导航系统,通过RFID定位系统抑制惯性导航误差发散,并应用AKF将噪声参数与量测输出参数关联实现实时更新。对AKF和标准卡尔曼滤波(Kalman Filtering, KF)下的RFID/SINS组合导航系统进行了仿真和实验。结果表明,在AKF下组合导航系统平均定位误差降低了10%,位置稳定性提升了7.4%,定位误差保持在0.07 m左右。基于AKF的RFID/SINS组合导航系统能够满足室内高精度定位导航的需求。     

国际RFID技术标准研究系列报道(四)ISO/IEC 18000-RFID空中接口协议分析(上)

ISO/IEC 18000 RFID空中接口协议是RFID标准体系的基础.从ISO/IEC 18000-1定义的参考框架和标准化参数出发,归纳了RFID空中接口协议的基本要素;对比分析了不同频段标准的特点及适用领域,并以ISO/IEC 18000-6为例,从物理层技术、防碰撞技术等方面比较了同一频段不同模式空中接口协议的特点;最后.总结了当前标准化工作的重点和未来趋势.     

基于EPCglobal标准的多标签天线的RFID通信建模

本文针对采用多标签天线的多输入单输出RFID通信进行了研究。首先,基于超高频RFID传输的EPCglobal标准,建立了RFID通信的传输链路模型,并讨论了2种规格的后向散射数据编码/解码原理;然后,提出了RFID通信的信道模型,并讨论了基于所提出信道模型实现的2种信道结构及其与RFID通信相关的衰落信道模型,重点讨论了MISO系统中的前/后向链路的相关性及信道的空间相关性;最后,提出了实现多标签天线的RFID通信的分集技术和传播模型。仿真结果表明,分集增益不仅与信道模型和采用的编码方案有关,而且与前/后向链路的相关性及信道的空间相关性密切相关,即随着更鲁棒编码方案的采用和传输信道之间的空间相关性的增大而减小,随着前/后向链路的相关性的增大而增大。     

文献与摘要（112）

RFID的新曙光 RFID in 2010：The New Dawn 文章介绍IDTechEx的最近完成的对全球RFID产业调查和市场预测,认为2010年整个RFID市场价值将达56.3美元,这包括标签,读取器的RFID卡,标签,表链和所有其他形式的因素/服务和软件。     

ISO／IEC 29143移动RFtD空中接口协议分析

移动RFID网络中,读写器碰撞问题变得更加复杂.分析了ISO/IEC 29143移动RFID空中接口协议草案,重点研究了其读写器防碰撞机制,并与现有的一些防碰撞机制对比,为我国移动RFID技术的研究和标准化提出建议.     

Performance improvement in tensile-strained In/sub 0.5/Al/sub 0.5/As/In/sub x/Ga/sub 1-x/As/In/sub 0.5/Al/sub 0.5/As metamorphic HEMT

This paper proposes a In/sub 0.5/Al/sub 0.5/As/In/sub x/Ga/sub 1-x/As/In/sub 0.5/Al/sub 0.5/As (x=0.3-0.5-0.3) metamorphic high-electron mobility transistor with tensile-strained channel. The tensile-strained channel structure exhibits significant improvements in dc and RF characteristics, including extrinsic transconductance, current driving capability, thermal stability, unity-gain cutoff frequency, maximum oscillation frequency, output power, power gain, and power added efficiency.     

Morphological and electrical characterization of SixCryCzBv thin films

Si_xCr_yC_zB_v thin films with several compositions have been studied for integration of high precision resistors in 0.8 μm BICMOS technology. These resistors, integrated in the back-end of line, have the advantage to provide high level of integration and attractive electrical behavior in temperature, for analog devices. The film morphology and the structure have been investigated through transmission electron microscopy analysis and have been then related to the electrical properties on the base of the percolation theory. According to this theory, and in agreement with experimental results, negative thermal coefficient of resistance (TCR) has been obtained for samples with low Cr content, corresponding to a crystalline volume fraction below the percolation threshold.Samples with higher Cr content exhibit, instead, a variation of the TCR as a function of film thickness: negative TCR values are obtained for thickness lower than 5 nm, corresponding to a crystalline volume fraction below the percolation threshold; positive TCR are obtained for larger thickness, indicating the establishment of a continuous conductive path between the Cr rich grains. This property seems to be determinant in order to assure the possibility to obtain thin film resistors almost independent on the temperature.     

Comparison between Pt/TiO2/Pt and Pt/TaOX/TaOY/Pt based bipolar resistive switching devices

Nonvolatile memories have emerged in recent years and have become a leading candidate towards replacing dynamic and static random-access memory devices. In this article, the performances of TiO₂ and TaO₂ nonvolatile memristive devices were compared and the factors that make TaO₂ memristive devices better than TiO₂ memristive devices were studied. TaO₂ memristive devices have shown better endurance performances (10⁸ times more switching cycles) and faster switching speed (5 times) than TiO₂ memristive devices. Electroforming of TaO₂ memristive devices requires~4.5 times less energy than TiO₂ memristive devices of a similar size. The retention period of TaO₂ memristive devices is expected to exceed 10 years with sufficient experimental evidence. In addition to comparing device performances, this article also explains the differences in physical device structure, switching mechanism, and resistance switching performances of TiO₂ and TaO₂ memristive devices. This article summarizes the reasons that give TaO₂ memristive devices the advantage over TiO₂ memristive devices, in terms of electroformation, switching speed, and endurance.     

The C-V-f and G/ω-V-f characteristics of Al/SiO2/p-Si (MIS) structures

The frequency dependence of capacitance-voltage (C-V) and conductance-voltage (G/ω-V) characteristics of the Al/SiO₂/p-Si metal-insulator-semiconductor (MIS) structures has been investigated taking into account the effect of the series resistance (R_s) and interface states (N_ss) at room temperature. The C-V and G/ω-V measurements have been carried out in the frequency range of 1 kHz to 1 MHz. The frequency dispersion in capacitance and conductance can be interpreted only in terms of interface states and series resistance. The N_ss can follow the ac signal and yield an excess capacitance especially at low frequencies. In low frequencies, the values of measured C and G/ω decrease in depletion and accumulation regions with increasing frequencies due to a continuous density distribution of interface states. The C-V plots exhibit anomalous peaks due to the N_ss and R_s effect. It has been experimentally determined that the peak positions in the C-V plot shift towards lower voltages and the peak value of the capacitance decreases with increasing frequency. The effect of series resistance on the capacitance is found appreciable at higher frequencies due to the interface state capacitance decreasing with increasing frequency. In addition, the high-frequency capacitance (C_m) and conductance (G_m/ω) values measured under both reverse and forward bias were corrected for the effect of series resistance to obtain the real diode capacitance. Experimental results show that the locations of N_ss and R_s have a significant effect on electrical characteristics of MIS structures.     

Very low-noise Al/sub 0.3/Ga/sub 0.7/As/Ga/sub 0.65/In/sub 0.35/As/GaAs single quantum-well pseudomorphic HEMTs

AlGaAs/GaInAs/GaAs pseudomorphic HEMTs with an InAs mole fraction as high as 35% in the channel has been successfully fabricated. The device exhibits a maximum extrinsic transconductance of 700 mS/mm. At 18 GHz, a minimum noise figure of 0.55 dB with 15.0 dB associated gain was measured. At 60 GHz, a minimum noise figure as low as 1.6 dB with 7.6 dB associated gain was also obtained. This is the best noise performance yet reported for GaAs-based HEMTs.<>     

A 12 /spl times/ 12 In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiode array

We report a 12 /spl times/ 12 In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiode (APD) array. The mean breakdown voltage of the APD was 57.9 V and the standard deviation was less than 0.1 V. The mean dark current was /spl sim/2 and /spl sim/300 nA, and the standard deviation was /spl sim/0.19 and /spl sim/60 nA at unity gain (V/sub bias/ = 13.5 V) and at 90% of the breakdown voltage, respectively. External quantum efficiency was above 40% in the wavelength range from 1.0 to 1.6 /spl mu/m. It was /spl sim/57% and /spl sim/45% at 1.3 and 1.55 /spl mu/m, respectively. A bandwidth of 13 GHz was achieved at low gain.     

Lanthanum diffusion in the TiN/LaOx/HfSiO/SiO2/Si stack

Band edge Complementary Metal Oxide Semiconductor (CMOS) devices are obtained by insertion of a thin LaO_x layer between the high-k (HfSiO) and metal gate (TiN). High temperature post deposition anneal induces Lanthanum diffusion across the HfSiO towards the SiO₂ interfacial layer, as shown by Time of Flight Secondary Ions Mass Spectroscopy (ToF-SIMS) and Atom Probe Tomography (APT). Fourier Transform Infrared Spectroscopy in Attenuated Total Reflexion mode (ATR-FTIR) shows the formation of La-O-Si bonds at the high-k/SiO₂ interface. Soft X-ray Photoelectron Spectroscopy (S-XPS) is performed after partial removal of the TiN gate. Results confirm La diffusion and changes in the La chemical environment.     

Al/sub 0.3/Ga/sub 0.7/As/In/sub x/Ga/sub 1-x/As (0/spl les/x/spl les/0.25) doped-channel field-effect transistors (DCFET's)

The properties of both lattice-matched and strained doped-channel field-effect transistors (DCFET's) have been investigated in AlGaAs/In/sub x/Ga/sub 1-x/As (0/spl les/x/spl les/0.25) heterostructures with various indium mole fractions. Through electrical characterization of grown layers in conjunction with the dc and microwave device characteristics, we observed that the introduction of a 150-/spl Aring/ thick strained In/sub 0.15/Ga/sub 0.85/As channel can enhance device performance, compared to the lattice-matched one. However, a degradation of device performance was observed for larger indium mole fractions, up to x=0.25, which is associated with strain relaxation in this highly strained channel. DCFET's also preserved a more reliable performance after biased-stress testings.<>     

Highly linear Al/sub 0.3/Ga/sub 0.7/N-Al/sub 0.05/Ga/sub 0.95/N-GaN composite-channel HEMTs

We report an Al/sub 0.3/Ga/sub 0.7/N-Al/sub 0.05/Ga/sub 0.95/N-GaN composite-channel HEMT with enhanced linearity. By engineering the channel region, i.e., inserting a 6-nm-thick AlGaN layer with 5% Al composition in the channel region, a composite-channel HEMT was demonstrated. Transconductance and cutoff frequencies of a 1 /spl times/100 /spl mu/m HEMT are kept near their peak values throughout the low- and high-current operating levels, a desirable feature for linear power amplifiers. The composite-channel HEMT exhibits a peak transconductance of 150 mS/mm, a peak current gain cutoff frequency (f/sub T/) of 12 GHz and a peak power gain cutoff frequency (f/sub max/) of 30 GHz. For devices grown on sapphire substrate, maximum power density of 3.38 W/mm, power-added efficiency of 45% are obtained at 2 GHz. The output third-order intercept point (OIP3) is 33.2 dBm from two-tone measurement at 2 GHz.