Lee metric decoding of alternant codes over /spl Zopf//sub q/

A multi-stage Lee metric list decoding approach for alternant codes over /spl Zopf/(p/sup l/ )where p is prime and l/spl ges/2 is proposed. It is demonstrated that the error-correcting capability of such a decoding scheme increasingly surpasses that of a single-stage decoding approach as the length of the code and l increases.     

Generalized MacWilliams identities for /spl Zopf//sub 4/-linear codes

In this correspondence, the generalized MacWilliams identities between the support weight distributions of a /spl Zopf//sub 4/-linear code of type 4/sup k/ and that of its dual are established.     

On /spl Zopf//sub 4/-linear Preparata-like and Kerdock-like codes

We say that a binary code of length n is additive if it is isomorphic to a subgroup of /spl Zopf//sub 2//sup /spl alpha// /spl times/ /spl Zopf//sub 4//sup /spl beta//, where the quaternary coordinates are transformed to binary by means of the usual Gray map and hence /spl alpha/ + 2/spl beta/ = n. In this paper, we prove that any additive extended Preparata (1968) -like code always verifies /spl alpha/ = 0, i.e., it is always a /spl Zopf//sub 4/-linear code. Moreover, we compute the rank and the dimension of the kernel of such Preparata-like codes and also the rank and the kernel of the /spl Zopf//sub 4/-dual of these codes, i.e., the /spl Zopf//sub 4/-linear Kerdock-like codes.     

Generalization of the /spl Sigma//sub 0/-rank criteria for space-time codes

Recently, Liu et al., developed the /spl Sigma//sub 0/-rank criteria for space-time codes. It provides a sufficient condition on codeword and generator matrices defined over finite rings /spl Zopf//sub 2k/(j) to ensure full spatial diversity with 2/sup 2k/-QAM modulation. Here, we generalize the /spl Sigma//sub 0/-rank criteria and derive a sufficient condition on the generator matrices defined over finite rings /spl Zopf//sub 2l/(j) to ensure full spatial diversity with 2/sup 2k/-QAM modulation for any positive integer l/spl les/k. We also show that generator matrices defined over GF(2) satisfying the BPSK stacking construction constraint of Mammons and El Gamal achieve full spatial diversity when used with 2/sup 2k/-QAM modulation.     

The rank and kernel of extended 1-perfect /spl Zopf//sub 4/-linear and additive non-/spl Zopf//sub 4/-linear codes

A binary extended 1-perfect code of length n + 1 = 2/sup t/ is additive if it is a subgroup of /spl Zopf//sub 2//sup /spl alpha// /spl times/ /spl Zopf//sub 4//sup /spl beta//. The punctured code by deleting a /spl Zopf//sub 2/ coordinate (if there is one) gives a perfect additive code. 1-perfect additive codes were completely characterized and by using that characterization we compute the possible parameters /spl alpha/, /spl beta/, rank, and dimension of the kernel for extended 1-perfect additive codes. A very special case is that of extended 1-perfect /spl Zopf//sub 4/-linear codes.     

Measurement technique for the quotient of cross sections /spl sigma//sub e/(/spl lambda//sub s/)//spl sigma//sub a/(/spl lambda//sub s/) of erbium-doped fibers

A method for the measurement of the quotient of the emission and absorption cross section of erbium-doped fibers is presented which utilizes the spontaneous emission perpendicular to the fiber axis. The maximum population of the first excited state achievable through illumination by signal light (/spl lambda//sub s/=1530 nm) is fixed by the quotient of the absorption and the emission cross section. This fact is used to determine the desired quotient. First measurements show that this method is very simple and highly accurate.<>     

Cyclic codes over GR(4/sup m/) which are also cyclic over /spl Zopf//sub 4/

Let GR(4/sup m/) be the Galois ring of characteristic 4 and cardinality 4/sup m/, and /spl alpha/_={/spl alpha//sub 0/,/spl alpha//sub 1/,...,/spl alpha//sub m-1/} be a basis of GR(4/sup m/) over /spl Zopf//sub 4/ when we regard GR(4/sup m/) as a free /spl Zopf//sub 4/-module of rank m. Define the map d/sub /spl alpha/_/ from GR(4/sup m/)[z]/(z/sup n/-1) into /spl Zopf//sub 4/[z]/(z/sup mn/-1) by d/spl alpha/_(a(z))=/spl Sigma//sub i=0//sup m-1//spl Sigma//sub j=0//sup n-1/a/sub ij/z/sup mj+i/ where a(z)=/spl Sigma//sub j=0//sup n-1/a/sub j/z/sup j/ and a/sub j/=/spl Sigma//sub i=0//sup m-1/a/sub ij//spl alpha//sub i/, a/sub ij//spl isin//spl Zopf//sub 4/. Then, for any linear code C of length n over GR(4/sup m/), its image d/sub /spl alpha/_/(C) is a /spl Zopf//sub 4/-linear code of length mn. In this article, for n and m being odd integers, it is determined all pairs (/spl alpha/_,C) such that d/sub /spl alpha/_/(C) is /spl Zopf//sub 4/-cyclic, where /spl alpha/_ is a basis of GR(4/sup m/) over /spl Zopf//sub 4/, and C is a cyclic code of length n over GR(4/sup m/).     

On the generators of /spl Zopf//sub 4/ cyclic codes of length 2/sup e/

Results are presented on the generators of ideals in the ring /spl Zopf//sub 4/[x]/(x/sup n/-1). In particular, each ideal (cyclic code) has a unique distinguished set of generators that characterizes any cyclic code. Some results about dual codes are also included.     

Genetic algorithm approach to fixed-order mixed H/sub 2//H/sub /spl infin// optimal deconvolution filter designs

The mixed H/sub 2//H/sub /spl infin// optimal deconvolution filter is proposed to achieve the H/sub 2/ optimal reconstruction and a desired robustness against the effect of uncertainties in signal processing from the H/sub /spl infin// norm perspective. However, the conventional mixed H/sub 2//H/sub /spl infin// optimal design filters are very complicated and are not practical for industrial applications. For simplicity of implementation and conservation of operation time, the fixed-order mixed H/sub 2//H/sub /spl infin// optimal deconvolution filter design is interesting for engineers in signal processing from the practical design perspective. In this study, to avoid the trap of local minima, a design method based on the genetic algorithm is introduced to treat the nonlinear optimization design problem of the fixed-order mixed H/sub 2//H/sub /spl infin// deconvolution filter. The convergence property of our design algorithm is also discussed. Finally, an example is presented to illustrate the design procedure and confirm the robustness performance of the proposed method.     

Efficient amplification using the /sup 4/F/sub 3/2//spl rarr//sup 4/I/sub 9/2/ transition in Nd-doped silica fiber

Amplification characteristics of the three-level /sup 4/F/sub 3/2//spl rarr//sup 4/I/sub 9/2/ transition in Nd-doped silica glass fiber are investigated under strong signal saturation and high pump power (150 mW). Aluminum codoped Nd-silica fibers exhibit strong superfluorescent behavior in the four-level /sup 4/F/sub 3/2//spl rarr//sup 4/I/sub 11/2/ transition which limits the optical conversion efficiency into the three-level transition. Ge-doped silica fibers do not exhibit this limitation and can efficiently amplify in the three-level transition with current laser-diode pump technology.     

Optimal double circulant self-dual codes over F4

Optimal double circulant self-dual codes over F₄ have been found for each length n⩽40. For lengths n⩽14, 20, 22, 24, 28, and 30, these codes are optimal self-dual codes. For length 26, the code attains the highest known minimum weight. For n⩾32, the codes presented provide the highest known minimum weights. The [36,18,12] self-dual code improves the lower bound on the highest minimum weight for a [36,18] linear code     

Characteristics of MOSFET Prepared on Si/MgO /spl dot/ Al/sub 2/O/sub 3//SiO/sub 2//Si Structure

A new silicon on insulator (SOI) wafer with epitaxial-Si/ epitaxial-MgO/spl dot/Al/sub 2/O/sub 3/ (0.1 /spl mu/m)/SiO/sub 2/(0.5 /spl mu/m)/     

InAlAs/InGaAs HBTs with simultaneously high values of F/sub /spl tau// and F/sub max/ for mixed analog/digital applications

We report the design, fabrication, and measurement of InAlAs/InGaAs heterostructure bipolar transistors (HBTs) designed for high speed digital circuits. At 0.96 V V/sub CE/ the current gain cutoff frequency, f/sub /spl tau//, is 300 GHz and the maximum frequency of oscillation, f/sub max/, is 235 GHz. This value of f/sub /spl tau//, is the highest reported for bipolar transistors. At a slightly higher V/sub CE/ bias, a high value of 295 GHz for f/sub /spl tau// and f/sub max/ were obtained simultaneously.     

A novel high-/spl kappa/ SONOS memory using TaN/Al/sub 2/O/sub 3//Ta/sub 2/O/sub 5//HfO/sub 2//Si structure for fast speed and long retention operation

A novel high-/spl kappa/ silicon-oxide-nitride-oxide-silicon (SONOS)-type memory using TaN/Al/sub 2/O/sub 3//Ta/sub 2/O/sub 5//HfO/sub 2//Si (MATHS) structure is reported for the first time. Such MATHS devices can keep the advantages of our previously reported TaN/HfO/sub 2//Ta/sub 2/O/sub 5//HfO/sub 2//Si device structure to obtain a better tradeoff between long retention and fast programming as compared to traditional SONOS devices. While at the same time by replacing hafnium oxide (HfO/sub 2/) with aluminum oxide (Al/sub 2/O/sub 3/) for the top blocking layer, better blocking efficiency can be achieved due to Al/sub 2/O/sub 3/'s much larger barrier height, resulting in greatly improved memory window and faster programming. The fabricated devices exhibit a fast program and erase speed, excellent ten-year retention and superior endurance up to 10/sup 5/ stress cycles at a tunnel oxide of only 9.5 /spl Aring/ equivalent oxide thickness.     

InGaAs-InP mesa DHBTs with simultaneously high f/sub /spl tau// and f/sub max/ and low C/sub cb//I/sub c/ ratio

We report an InP-InGaAs-InP double heterojunction bipolar transistor (DHBT), fabricated using a conventional triple mesa structure, exhibiting a 370-GHz f/sub /spl tau// and 459-GHz f/sub max/, which is to our knowledge the highest f/sub /spl tau// reported for a mesa InP DHBT-as well as the highest simultaneous f/sub /spl tau// and f/sub max/ for any mesa HBT. The collector semiconductor was undercut to reduce the base-collector capacitance, producing a C/sub cb//I/sub c/ ratio of 0.28 ps/V at V/sub cb/=0.5 V. The V/sub BR,CEO/ is 5.6 V and the devices fail thermally only at >18 mW//spl mu/m/sup 2/, allowing dc bias from J/sub e/=4.8 mA//spl mu/m/sup 2/ at V/sub ce/=3.9 V to J/sub e/=12.5 mA//spl mu/m/sup 2/ at V/sub ce/=1.5 V. The device employs a 30 nm carbon-doped InGaAs base with graded base doping, and an InGaAs-InAlAs superlattice grade in the base-collector junction that contributes to a total depleted collector thickness of 150 nm.     

Self-aligned InP DHBT with f/sub /spl tau// and f/sub max/ over 300 GHz in a new manufacturable technology

We report self-aligned indium-phosphide double-heterojunction bipolar transistor devices in a new manufacturable technology with both cutoff frequency (f/sub /spl tau//) and maximum oscillation frequency (f/sub max/) over 300 GHz and open-base breakdown voltage (BV/sub ceo/) over 4 V. Logic circuits fabricated using these devices in a production integrated-circuit process achieved a current-mode logic ring-oscillator gate delay of 1.95 ps and an emitter-coupled logic static-divider frequency of 152 GHz, both of which closely matched model-based circuit simulations.     

Robust H/sub /spl infin// filtering for Uncertain2-D continuous systems

This paper considers the problem of robust H/sub /spl infin// filtering for uncertain two-dimensional (2-D) continuous systems described by the Roesser state-space model. The parameter uncertainties are assumed to be norm-bounded in both the state and measurement equations. The purpose is the design of a 2-D continuous filter such that for all admissible uncertainties, the error system is asymptotically stable, and the H/sub /spl infin// norm of the transfer function, from the noise signal to the estimation error, is below a prespecified level. A sufficient condition for the existence of such filters is obtained in terms of a set of linear matrix inequalities (LMIs). When these LMIs are feasible, an explicit expression of a desired H/sub /spl infin// filter is given. Finally, a simulation example is provided to demonstrate the effectiveness of the proposed method.     

Robust speed control of an induction motor: an /spl Hscr//sub /spl infin// control theory approach with field orientation and /spl mu/-analysis

In this paper we present a robust speed control strategy for an induction motor under field orientation. The control framework employed properly represents the induction motor state-space model and its inherent variations, which are treated as structured uncertainties. Applying an /spl Hscr//sub /spl infin//, optimization methodology on this framework we derive a stabilizing controller to meet design objectives and then robust stability and performance against such variations are checked by using /spl mu/-analysis. No on-line tuning is required for the parameters of the derived controller, which is the dynamic system responsible to keep the rotor flux orientation as well as the speed regulation at design levels, irrespective of the motor operating points. A general methodology arose from the usage of the proposed strategy and simulated experiments showed satisfactory results for the robust speed control of an induction motor.     

Cyclic codes and self-dual codes over F2+uF2

We introduce linear cyclic codes over the ring F₂+uF ₂={0,1,u,u¯=u+1}, where u²=0 and study them by analogy with the Z₄ case. We give the structure of these codes on this new alphabet. Self-dual codes of odd length exist as in the case of Z₄-codes. Unlike the Z₄ case, here free codes are not interesting. Some nonfree codes give rise to optimal binary linear codes and extremal self-dual codes through a linear Gray map     

InGaAs/InP DHBTs with 120-nm collector having simultaneously high f/sub /spl tau//, f/sub max//spl ges/450 GHz

InP/In/sub 0.53/Ga/sub 0.47/As/InP double heterojunction bipolar transistors (DHBT) have been designed for increased bandwidth digital and analog circuits, and fabricated using a conventional mesa structure. These devices exhibit a maximum 450 GHz f/sub /spl tau// and 490 GHz f/sub max/, which is the highest simultaneous f/sub /spl tau// and f/sub max/ for any HBT. The devices have been scaled vertically for reduced electron collector transit time and aggressively scaled laterally to minimize the base-collector capacitance associated with thinner collectors. The dc current gain /spl beta/ is /spl ap/ 40 and V/sub BR,CEO/=3.9 V. The devices operate up to 25 mW//spl mu/m/sup 2/ dissipation (failing at J/sub e/=10 mA//spl mu/m/sup 2/, V/sub ce/=2.5 V, /spl Delta/T/sub failure/=301 K) and there is no evidence of current blocking up to J/sub e//spl ges/12 mA//spl mu/m/sup 2/ at V/sub ce/=2.0 V from the base-collector grade. The devices reported here employ a 30-nm highly doped InGaAs base, and a 120-nm collector containing an InGaAs/InAlAs superlattice grade at the base-collector junction.