基于RT器件的三值与非门、或非门电路设计

共振隧穿(resonant tunnel,RT)器件本身所具有的微分负阻(negative differential resistance,NDR)特性使其成为天然的多值器件.文中利用RT器件的负阻特性,以开关序列原理为指导,设计了基于RT电路的开关模型,实现了更为简单的三值RT与非门和或非门电路,并利用MOS网络模型,通过SPICE软件仿真验证了所设计电路的正确性.该设计思想可推广到更高值的多值电路设计中.     

改进型三值RTD量化器的设计

共振隧穿二极管RTD本身所特有的负阻微分特性使其成为天然的多值器件。介绍了三值RTD和三值RTD+HEMT的伏安特性以及三值RTD量化器和开关序列的工作原理,以RTD开关序列模型为指导思想设计出改进型三值RTD量化器电路,比原电路结构简单,仿真结果验证了设计的正确性。该设计方法不仅可以用于实现更简单和更灵活的三值RTD量化器,还能用于更高值的多值RTD逻辑电路的设计中。     

基于标准CMOS工艺制作的MOS-NDR柔性逻辑电路

本文利用0.35um标准CMOS工艺实现了一种由4个nMOSFET构成的MOS型负阻器件。这种负阻器件的I-V特性与传统的化合物材料构成的共振隧穿二极管（RTD）的特性类似,而且可以通过第三端来调制其I-V特性。基于这种MOS型负阻器件,本文实现了一种通过调节阈值电压来实现与非门（NAND）到或非门（NOR）转变的柔性逻辑电路。此种电路所用器件较少,而且由于使用标准IC的设计和工艺流程,制作工艺大大简化。     

双管S型负阻器件的研究

模拟电路实验证明用两个同极性的晶体管以多种电路接法都能获得具有Ｓ型负阻特性的两端器件。在此实验基础上研制得到一种双向两端Ｓ型负阻器件（ＴＢＮＲＤ器件）。本文还对该器件产生负阻的原因进行了理论分析。     

硅光学双稳态(SOB)器件

利用作者近期研制的硅光电表面负阻晶体管（PNEGIT）或光电“∧”双极晶体管（PLBT）两种硅光电负阻器件,提出并成功地实现了一种新型的硅光学双稳态器件。即以PNEGIT（或PLBT）作为光的输入器件,以其驱动一发光管（LED）作为光输出器件,由于PNEGIT和PLBT都具有光电负阻特性,致使在输出光功率（Pout）-输入光功率（Pin）特性上出现逆时针方向的光学双稳回线。这种器件具有光开关、光逻辑、光放大、光存贮、光眼福等多种功能,扩展了硅光电器件在光逻辑、光计算、光通讯等领域中的应用。     

用硅光电负阻器件产生光学双稳态

本文利用作者近期研制出的硅光电表面负阻晶体管（PNEGIT），首次提出并通过实验成功地实现了一种新的光学双稳态即以PNEGIT作为光输入器件，用它驱动一发光管（LED）作为光输出器件，由于PNEGIT具有负阻输出特性，致使LED输出光功率（POUt）一输入光功率（Pin）特性上出现光学双稳环．这种器件具有光开关、光逻辑、光存贮等多种功能，将为硅光电器件在光信息处理、光计算、光通讯等领域中的应用，开辟一条新途径     

双向负阻晶体管的脉冲应用

双向负阻晶体管的脉冲应用高广和，冯明昭，付连生关键词负阻晶体管，阶跃二极管，亚钠秒脉冲１引言双向负阻晶体管（ＢＮＲＴ）是我国发明的一种新功能器件，该器件是一种合并晶体管结构，如图１（ａ）所示，它在电路中的符号参照图１（ｂ）。两输出电极Ｅｌ和Ｅ２具有完...     

SPNRD的光电负阻特性与光学双稳态特性间的对应关系

文章对电阻为负载时,硅光电负阻器件（ＳＰＮＲＤ）的光电负阻特性和光学双稳态特性间的对应关系进行了系统的分析。定义了描述静态光学双稳态特性的７个基本参数,并分析了负载电阻（ＲＬ）和电源电压（Ｖ０）对这些参数的影响,理论分析结果与实测结果相一致,所得出的结论适用于由负阻特性产生双稳态特性的所有情况１。     

Si光电负阻器件和Si-Ge异质结混合模式晶体管的模拟研究

“硅光负阻器件的研究”、“高频高速硅光负阻器件的研究”是国家自然科学基金和天津自然科学基金资助的项目,由天津大学电子信息工程学院微电子系新型器件小组承担研究工作。笔者围绕着该两项课题进行了硅光电负阻器件的基础研究工作,对两种硅光电负阻器件的机理进行了探讨。进行了二维器件模拟（简称器件模拟）,对影响器件性能的主要参数进行了模拟分析,并与实验进行了对比。建立了两种光电负阻器件的电路模型,并进行了实验验证。为光电负阻器件基础研究和应用研究打下了良好的基础。“SOI／SiGe/BiCMOS集成电路的研究”是国家自然科学基金重点项目,天津大学和清华大学共同承担了这项研究工作。笔者围绕着该项研究工作进行了SiGe/BiMOS的基础研究和设计工作,进行了器件模拟,对影响器件性能的主要参数进行模拟分析,模拟为器件设计提供了有意义的指导,完成版图设计和工艺设计。为SOI／SiGe/BiCMOS集成电路的研制奠定良好开端。具体研究的主要内容包括以下九个方面。     

宽带GaAs MESFET开关模型

提出了一种 MESFET开关的模型——附加栅控开关模型 ,适用于 MMIC电路的设计 ,具有很好的宽带微波特性。在 0 .1～ 2 0 GHz频率范围内 ,器件测试值与模型模拟值吻合较好     

Digital circuit applications of resonant tunneling devices

Many semiconductor quantum devices utilize a novel tunneling transport mechanism that allows picosecond device switching speeds. The negative differential resistance characteristic of these devices, achieved due to resonant tunneling, is also ideally suited for the design of highly compact, self-latching logic circuits. As a result, quantum device technology is a promising emerging alternative for high-performance very-large-scale-integration design. The bistable nature of the basic logic gates implemented using resonant tunneling devices has been utilized in the development of a gate-level pipelining technique, called nanopipelining, that significantly improves the throughput and speed of pipelined systems. The advent of multiple-peak resonant tunneling diodes provides a viable means for efficient design of multiple-valued circuits with decreased interconnect complexity and reduced device count as compared to multiple-valued circuits in conventional technologies. This paper details various circuit design accomplishments in the area of binary and multiple-valued logic using resonant tunneling diodes (RTD's) in conjunction with high-performance III-V devices such as heterojunction bipolar transistors (HBT's) and modulation doped field-effect transistors (MODFET's). New bistable logic families using RTD+HBT and RTD+MODFET gates are described that provide a single-gate, self-latching majority function in addition to basic NAND, NOR, and inverter gates     

A novel multiple-valued logic gate using resonant tunneling devices

We demonstrate a novel multiple-valued logic (MVL) gate using series-connected resonant tunneling devices. Logic operation is based on the control of the switching sequence of these devices through the modulation of their peak currents by the input signal. We obtain the literal function, one of fundamental MVL functions, by integrating three InGaAs-based resonant-tunneling diodes with two HEMT's on an InP substrate. The gate configuration is greatly simplified compared with a conventional literal gate employing CMOS circuits     

CMOS负阻单元逻辑电路及其发展前景

在回顾了多值逻辑(MVL)电路的优点、分析了共振隧穿器件(RTD)电路的特点和比较了各种类型负阻器件性能的基础上,提出了利用CMOS型负阻单元作为基础性器件设计并实现CMOS型逻辑电路的新概念,并指出了此研究领域的几个重点研究内容和方向。     

A novel amorphous silicon doping superlattice device with doubleswitching characteristics for multiple-valued logic applications

An amorphous silicon doping superlattice device with different period lengths is developed, providing a double switching characteristic that has been demonstrated to yield multiple stable states for multiple-valued logic applications. Unlike those of conventional switching devices, the switching characteristics of the present device are caused by avalanche multiplication and a barrier-lowering effect. A tristate memory cell using this device is proposed and discussed     

Empirical model for the current-voltage characteristic of resonant-tunneling devices

An empirical model is presented for the current-voltage characteristics of resonanttunneling (RT) devices. By using this model an analytical study of millimeter-band electronic circuits employing RT devices can be performed.     

Quantum functional devices: resonant-tunneling transistors,circuits with reduced complexity, and multiple valued logic

Recent advances in the area of quantum functional devices are discussed. After a discussion of the functional device concept, resonant-tunneling bipolar transistors (RTBTs) with a double barrier in the base region are described. Design considerations for RTBTs with ballistic injection and the first observation of minority-electron ballistic RT are presented. RTBTs using thermionic injection and exhibiting a high peak-to-valley ratio at room temperature in the transfer characteristics are also described. Multiple-state RTBTs and their DC and microwave performance are then discussed. Circuit applications of RTBTs also are discussed. It is shown that RTBTs allow the implementation of many analog and digital circuit functions with a greatly reduced number of transistors and show considerable promise for multiple-valued logic. Experimental results on frequency multipliers and parity bit generators are presented. Analog-to-digital converters are memory circuits are also discussed. Two novel superlattice-base transistors are reported. Negative transconductance is achieved by suppression of injection into minibands. Gated quantum-well RT transistors are also discussed     

A 200 MHz pipelined multiplier using 1.5 V-supply multiple-valuedMOS current-mode circuits with dual-rail source-coupled logic

A new multiple-valued current-mode MOS integrated circuit is proposed for high-speed arithmetic systems at low supply voltage. Since a multiple-valued source-coupled logic circuit with dual-rail complementary inputs results in a small signal-voltage swing while providing a constant driving current, the switching speed of the circuit is improved at low supply voltage. As an application to arithmetic systems, a 200 MHz 54×51-b pipelined multiplier using the proposed circuits with a 1.5 V supply voltage is designed with a 0.8-μm standard CMOS technology. The performance of the proposed multiplier is evaluated to be about 1.4 times faster than that of a corresponding binary implementation under the normalized power dissipation. A prototype chip is also fabricated to confirm the basic operation of the multiple-valued arithmetic circuit     

Compact non-binary fast adders using single-electron devices

This paper proposes compact adders that are based on non-binary redundant number systems and single-electron (SE) devices. The adders use the number of single electrons to represent discrete multiple-valued logic state and manipulate single electrons to perform arithmetic operations. These adders have fast speed and are referred as fast adders. We develop a family of SE transfer circuits based on MOSFET-based SE turnstile. The fast adder circuit can be easily designed by directly mapping the graphical counter tree diagram (CTD) representation of the addition algorithm to SE devices and circuits. We propose two design approaches to implement fast adders using SE transfer circuits: the threshold approach and the periodic approach. The periodic approach uses the voltage-controlled single-electron transfer characteristics to efficiently achieve periodic arithmetic functions. We use HSPICE simulator to verify fast adders operations. The speeds of the proposed adders are fast. The numbers of transistors of the adders are much smaller than conventional approaches. The power dissipations are much lower than CMOS and multiple-valued current-mode fast adders.     

谐振隧穿晶体管数字单片集成电路

阐述了谐振隧穿器件构成的与非门、单/双稳逻辑转换电路、或非门、流水线逻辑门、D触发器、静态存储器、多值逻辑和静态分频器等数字单片集成电路,它们具有高频高速、低功耗、多值逻辑、节点少、节省器件、简化电路等显著优势,将是数字集成电路后续小型化最有希望的代表。指出材料生长和芯片工艺制作等问题是其实现工业化生产的瓶颈。综述了国内外在该领域的研究现状和发展趋势,特别是美国已经有高水平的谐振隧穿晶体管数字单片电路问世,我国正在开展少量的研究工作。