Combustion Synthesis of Sialon Powders (Si6-zAlzOzN8-z, Z = 0.3, 0.6)

Fine sialon powders (Si_6-zAl_zO_zN_8-z, Z = 0.3, 0.6) were prepared by nitriding combustion. Silicon powders was reacted with AlN and Si₃N₄ under 10 MPa of nitrogen gas. The reaction temperature reached above 2000°C and single-phase sialon powders were synthesized within minutes. The obtained powders were fully densified without additives by hot isostatic pressing. The sintered body had a flexural strength of 600 MPa by 4-point bending.     

Quantitative Microscopy of β-Si3N4 Ceramics

The three-dimensional grain size distribution in an experimental β-Si₃N₄ material has been determined using the hexagonal prism as a model of β-Si₃N₄ grain shape. Results from quantitative microscopy of polished and etched sections were compared with computer-generated two-dimensional stereological parameters of hexagonal prisms with different aspect ratios in order to determine an average grain shape (i.e., aspect ratio) in the microstructure. Section parameter distributions for the average grain shape were obtained from the computer simulations and used in a three-dimensional reconstruction of the microstructure. The results showed that this Si₃N₄ ceramic had the postulated fibrous microstructure and a broad grain size distribution.     

Kinetics of β-Si3N4 Grain Growth in Si3N4 Ceramics Sintered under High Nitrogen Pressure

The kinetics of anisotropic β-Si₃N₄ grain growth in silicon nitride ceramics were studied. Specimens were sintered at temperatures ranging from 1600° to 1900°C under 10 atm of nitrogen pressure for various lengths of time. The results demonstrate that the grain growth behavior of β-Si₃N₄ grains follows the empirical growth law Dⁿ– D₀ⁿ = kt , with the exponents equaling 3 and 5 for length [001] and width [210] directions, respectively. Activation energies for grain growth were 686 kJ/mol for length and 772 kJ/mol for width. These differences in growth rate constants and exponents for length and width directions are responsible for the anisotropy of β-Si₃N₄ growth during isothermal grain growth. The resultant aspect ratio of these elongated grains increases with sintering temperature and time.     

Shock-Compacted Si3N4 Nanocrystalline Ceramics: Mechanisms of Consolidation and of Transition from α- to β-form

Ultrafine powder of α-Si₃N₄ several tens of nanometers in size was successfully consolidated using a shock-compaction technique under 40 GPa. The bulk density of the most dense portion attained 99% of the theoretical value, and the Vick-ers microhardness was 2300 kg/mm. Consolidation was achieved through both densificarion by plastic deformation of constituent grains and interparticle bonding by surface melting. A transition process to β-Si₃N₄ was observed by transmission electron microscopy: Surface melting of the individual grains propagated into the center as temperature increased, and a large mass formed. A precursor of β–Si3N4 then emerged from the mass and finally grew into a β-Si₃N₄ crystal.     

Residual α–Si3N4 in O' Crystals in CeO2-Doped O'+β' SiAlON Ceramics

The microstructure of a pressureless sintered (1605°C, 90 min) O'+β' SiAlON ceramic with CeO₂ doping has been investigated. It is duplex in nature, consisting of very large, slablike elongated O' grains (20–30 μm long), and a continuous matrix of small rodlike β' grains (< 1.0 μm in length). Many α-Si₃N₄ inclusions (0.1–0.5 μm in size) were found in the large O' grains. CeO₂-doping and its high doping level as well as the high Al₂O₃ concentration were thought to be the main reasons for accelerating the reaction between the α-Si₃N₄ and the Si-Al-O-N liquid to precipitate O'–SiAlON. This caused the supergrowth of O' grains. The rapid growth of O' crystals isolated the remnant α–Si₃N₄ from the reacting liquid, resulting in a delay in the α→β-Si₃N₄ transformation. The large O' grains and the α-Si₃N₄ inclusions have a pronounced effect on the strength degradation of O'+β' ceramics.     

Influence of Phase Formation on Dielectric Properties of Si3N4 Ceramics

The influence of phase formation on the dielectric properties of silicon nitride (Si₃N₄) ceramics, which were produced by pressureless sintering with additives in MgO–Al₂O₃–SiO₂ system, was investigated. It seems that the difference in the dielectric properties of Si₃N₄ ceramics sintered at different temperatures was mainly due to the difference of the relative content of α-Si₃N₄, β-Si₃N₄, and the intermediate product (Si₂N₂O) in the samples. Compared with α-Si₃N₄ and Si₂N₂O, β-Si₃N₄ is believed to be a major factor influencing the dielectric constant. The high-dielectric constant of β-Si₃N₄ could be attributed to the ionic relaxation polarization.     

Comparison of Tribological Behavior Between α-Sialon/Si3N4 and Si3N4/Si3N4 Sliding Pairs in Water Lubrication

We report here the study on tribological behavior of α-Sialon in aqueous medium. The results derived from a wide range of test conditions are briefly discussed. A reduction in friction coefficient from 0.7 to 0.03 and a decrease in wear rate by two orders of magnitude were achieved under low load (9.8 N) and high speed (>0.54 m/s) conditions. The tribological behavior of α-Sialon/Si₃N₄ ceramics was then compared with Si₃N₄/Si₃N₄ tribopairs.     

Effect of α-Si3N4 Particle Size on the Microstructural Evolution of Si3N4 Ceramics

The effects of initial particle size on the microstructure of silicon nitride ceramics produced by pressureless sintering have been investigated. The microstructures of the silicon nitride ceramics varied considerably with the size of the initial powder. With decreasing powder size, abnormal grain growth was enhanced, which resulted in significant bimodal distribution of grain size. The observed results are discussed in relation to the two-dimensional nucleation and growth theory for faceted crystals.     

Microstructure Tailoring for High Thermal Conductivity of β-Si3N4 Ceramics

β-Si₃N₄ ceramics sintered with Yb₂O₃ and ZrO₂ were fabricated by gas-pressure sintering at 1950°C for 16 h changing the ratio of "fine" and "coarse" high-purity β-Si₃N₄ raw powders, and their microstructures were quantitatively evaluated. It was found that the amount of large grains (greater than a few tens of micrometers) could be drastically reduced by mixing a small amount of "coarse" powder with a "fine" one, while maintaining high thermal conductivity (>140 W·(m·K)⁻¹). Thus, this work demonstrates that it is possible for β-Si₃N₄ ceramics to achieve high thermal conductivity and high strength simultaneously by optimizing the particle size distribution of raw powder.     

Mechanical Properties of β-Si3N4-Whisker/Si3N4-Matrix Composites

Composites containing 30 vol%β-Si₃N₄ whiskers in a Si₃N₄ matrix were fabricated by hot-pressing. The composites exhibited fracture toughness values between 7.6 and 8.6 MPa · m^1/2, compared to 4.0 MPa · m^1/2 for unreinforced polycrystalline Si₃N₄. The improvements in fracture toughness were attributed to crack wake effects, i.e., whisker bridging and pullout mechanisms.     

Topotactically Oriented α-Si3N4 Cores in Sintered β-Si3N4

α-Si₃N₄ core structures within β-Si₃N₄ grains have been studied by transmission electron microscopy. The grains were dispersed in an oxynitride glass which was previously melted at 1600°C. The cores were topotactically related to the as-grown β-Si₃N₄ crystallites and are related to epitactical nucleation during heat treatment as the most probable mechanism.     

Stability of Si3N4 and Liquid Phase(s) During Sintering

Advanced sintering techniques for consolidation of Si₃N₄ powders in the presence of an oxygen-rich liquid phase(s) require high temperatures and usually high nitrogen pressures. A stability diagram is constructed for Si₃N₄ as a function of the partial pressures of nitrogen (P_N2) and silicon (P_Si). High P_N2 (20 to 100 atm) increases the stability of Si₃N₄ and the oxygen-rich liquid phase by reducing the P_Si and P_Si0, respectively. The region of high sinterability is outlined for submicrometer Si₃N₄ powders containing 7 wt% BeSiN₂ and 7 wt% SiO₂ as densification aids .     

Diffusional Reaction-Bonding of Si3N4 Ceramics Under High Pressure

Diffusional reaction-bonding of Si₃N₄ ceramics was accomplished by maintaining surnples at 3.0 GPa and 1800°C for 1 h. Interfaces of bonded samples were examined by scanning electron microscopy, Vickers microhardness measurements, and electron probe microanalysis. These results indicate that strong bonding between sintered ceramic bodies is achieved by a diffusional reaction at high temperature and pressure .     

Hot Isostatic Pressing of Si3N4 Powder Compacts and Reaction-Bonded Si3N4

Hot isostatically pressed silicon nitride was produced by densifying Si₃N₄ powder compacts and reaction-bonded Si₃N₄ (RBSN) parts with yttria as a sintering additive. The microstructure was analyzed using scanning electron microscopy, X-ray diffraction, and density measurements. The influence of the microstructure on fracture strength, creep, and oxidation behavior was investigated. It is assumed that the higher amount of oxygen in the Si₃N₄ starting powder compared with the RBSN starting material leads to an increased amount of liquid phase during densification. This results in grain growth and in a larger amount of grain boundary phase in the hot isostatically pressed material. Compared with the hot isostatically pressed RBSN samples therefore, strength decreases whereas the creep rate and the weight gain during oxidation increase.     

Synthesis of Porous Si3N4 Ceramics with Rod-Shaped Pore Structure

Porous Si₃N₄ ceramics were synthesized by pressureless sintering of green compacts prepared using slip casting of slurries containing Si₃N₄, 5 wt% Y₂O₃+2 wt% Al₂O₃, and 0–60% organic whiskers composed of phenol–formaldehyde resin with solids loading up to 60 wt%. Rheological properties of slurries were optimized to achieve a high degree of dispersion with a high solid-volume fraction. Samples were heated at 800°C in air and sintered at 1850°C in a N₂ atmosphere. Porosities ranging from 0% to 45% were obtained by the whisker contents (corresponding to 0–60 vol% whisker). Samples exhibited a uniform pore distribution. Their rod-shaped pore morphology originated from burnout of whiskers, and an extremely dense Si₃N₄ matrix.     

Pre-Treatment of Si3N4 Filler Particles for the Improvement of Si3N4filler/Si–C–Nmatrix Particulate-Reinforced Composites

The surface of Si₃N₄ filler particles was modified by heat treatments before the onset of the precursor impregnation and pyrolysis process. The strength, Young's modulus, and hardness of Si₃N_4filler/Si–C–N_matrix particulate-reinforced composites (PRC) were improved up to 50%, 60%, and 71%, respectively, by the treatment. Si was formed at the surface of the Si₃N₄ filler particles by the treatment, which induced a strong bonding between the filler and the Si–C–N matrix during pyrolysis by a carbothermal reaction, thus improving the properties of the PRC.     

Properties of Si3N4 Produced by Nitriding Slip-Cast Si Containing Si3N4 Grog Additions

The properties of Si₃N₄ compositions produced by nitriding slip-cast Si bodies containing up to 16% Si₃N₄ grog were determined. The introduction of grog consistently lowered the densities, the room- and high-temperature strengths, and the resistance to oxidation. The open structure of the grog-containing mixes favored low-temperature gas-phase reactions leading to α-Si₃N₄ formation. In higher-density compositions containing predominantly Si, gas-liquid-solid reactions at higher temperatures produced a relatively greater content of the β phase.     

Calculation of Grain-Boundary Bonding in Rare-Earth-Doped β-Si3N4

First-principles molecular orbital calculations are performed by the discrete variational Xalpha method using model clusters of rare-earth-doped β-Si₃N₄ and the interface between prismatic planes of β-Si₃N₄ and intergranular glassy films. On the basis of the total overlap population of each cluster, the rare-earth ions are implied to be stable in the grain-boundary model, while they are not stable in the bulk model. These results are consistent with experimental observations showing significant segregation of Ln³⁺ ions at the grain boundary and no solubility of Ln³⁺ into bulk β-Si₃N₄. Grain-boundary bonding is weakened with an increase of the ionic radius of the rare-earth ions, which provides a reasonable explanation for the ionic size dependence of the crack propagation behaviors as well as the growth rate of the prismatic plane in the rare-earth-doped β-Si₃N₄ during liquid-phase sintering.