Preparation and microwave dielectric properties of Bi2Ti4O11 ceramics

Single phase of Bi₂Ti₄O₁₁ ceramics, which belong to meta-stable phase compounds, were synthesized by controlling the reaction time through conventional solid-state method. The effects of annealing time on phase composition of Bi₂Ti₄O₁₁ ceramic powders and sintered ceramics were studied by XRD analysis. Second phase Bi₂Ti₂O₇ appeared when the annealing time shorter than 4 h. However, pure phase of Bi₂Ti₄O₁₁ powders can be formed by prolonging the annealing time to 6 h at 1,000 °C. The sintering temperatures on microstructure and microwave dielectric properties of Bi₂Ti₄O₁₁ ceramics were investigated. The results show that ceramics sintered at 1,075–1,175 °C are single phase of Bi₂Ti₄O₁₁ and present two different sizes of prismatic shape grains. Smaller size crystals grow into larger ones with increasing sintering temperature. The ceramics sintered at 1,125 °C reach a maximum density and have a microwave dielectric properties of ε_r = 51.2, Q × f = 3,050 GHz and τ_f = ?297 ppm/°C.     

Synthesis and microwave dielectric properties of Ba4Ti3P2O15 ceramics

Present work introduces a new kind of microwave dielectric ceramic, Ba₄Ti₃P₂O₁₅. Ba₄Ti₃P₂O₁₅ ceramic can be prepared by solid state reaction method and be well densified after being sintered at above 1175 °C for 4 h in air. All the XRD patterns can be fully indexed as single-phase structure. The best microwave dielectric properties can be obtained in ceramic sintered at 1200 °C for 4 h with permittivity about 20.7, Q × f about 42,210 GHz and TCF about 37 ppm °C^?1. Measurements of the microwave dielectric properties of Ba₄Ti₃P₂O₁₅ ceramic revealed the existence of a maximum in the temperature dependence of the dielectric loss because of the defect dipoles relaxation.     

Influence of CuO addition to BaSm2Ti4O12 microwave ceramics on sintering behavior and dielectric properties

Microwave dielectric ceramics of tungsten–bronze-type BaSm₂Ti₄O₁₂ were prepared by doping CuO (up to 2 wt.%) as the liquid-phase sintering aid. The effects of CuO additive on the densification, micro structure and dielectric properties were investigated. Due to the liquid-phase effect, the sintering temperature of BaSm₂Ti₄O₁₂ ceramics with 1 wt.% CuO addition can be effectively reduced to 1160 °C, about 200 °C lower than that of pure BaSm₂Ti₄O₁₂ ceramics, while good microwave dielectric properties of ɛ_r = 75.8, Q*f = 4914.6 GHz and τ_f = −7.65 ppm/°C were still achieved.     

Non-Ohmic and dielectric properties of Ba-doped CaCu3Ti4O12 ceramics

The microstructure, dielectric and electrical properties of Ca_1?x Ba _x Cu₃Ti₄O₁₂ (where x = 0, 0.025, and 0.05) ceramics were investigated. Our microstructural analyses revealed that Ba²⁺ doping ions preferentially form in a secondary phase, and are not introduced into the CaCu₃Ti₄O₁₂ lattice. Grain growth rate of CaCu₃Ti₄O₁₂ ceramics was significantly inhibited by the Ba-related secondary phase particles, resulting in a large decrease in their mean grain size. The dielectric permittivity of CaCu₃Ti₄O₁₂ ceramics decreased with increasing Ba content. Their loss tangent decreased after addition of CaCu₃Ti₄O₁₂ with 2.5 mol% of Ba²⁺, and increased with increasing Ba contents to 5.0 mol%. The nonlinear coefficient and breakdown field of the Ca_1?x Ba _x Cu₃Ti₄O₁₂ ceramics were significantly enhanced by adding 2.5 mol% of Ba²⁺, followed by a slight decrease as Ba²⁺ concentration was increased to 5.0 mol%. Using impedance spectroscopy analysis, it was revealed that variations in dielectric and non-Ohmic properties are associated with electrical response of grain boundaries. This supports the internal barrier layer capacitor model.     

Microstructures and microwave dielectric properties of low-temperature sintered Ca2Zn4Ti15O36 ceramics

Low-temperature sintered Ca₂Zn₄Ti₁₅O₃₆ microwave dielectric ceramic was prepared by conventional solid state reaction method. The influences from V₂O₅ addition on the sintering behavior, crystalline phases, microstructures and microwave dielectric properties were investigated. The crystalline phases and microstructures of Ca₂Zn₄Ti₁₅O₃₆ ceramic with V₂O₅ addition were investigated by X-ray diffraction, scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDS). V₂O₅ addition lowered the sintering temperature of Ca₂Zn₄Ti₁₅O₃₆ ceramics from 1140 °C to 930 °C. Ca₂Zn₄Ti₁₅O₃₆ ceramic with 5wt% V₂O₅ addition could be densified well at 930 °C, and showed good microwave dielectric properties of ε_r ~ 46, Q × f ~ 13400 GHz, and temperature coefficient of resonant frequency (τ_f) ~ 164 ppm/°C.

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Microwave dielectric properties of Sr2Ce2Ti5O16 ceramics

Sr₂Ce₂Ti₅O₁₆ dielectric ceramics were prepared by conventional solid-state ceramic route. The structure and microstructure of the ceramics were investigated by X-ray diffraction and scanning electron microscopic methods. The Sr₂Ce₂Ti₅O₁₆ has a psuedocubic structure. It has ɛ_r of 113, unloaded quality factor (Q_u × f) of 8000 GHz and temperature coefficient of resonant frequency of 306 ppm/°C. The effects of various dopants on the structure, microstructure and microwave dielectric properties of the material have been investigated. It is found that addition of small amount of dopants such as PbO, Al₂O₃, Nd₂O₃, MoO₃, CeO₂, La₂O₃, Fe₂O₃ and NiO improve the microwave dielectric properties of Sr₂Ce₂Ti₅O₁₆.     

Modified giant dielectric properties of samarium doped CaCu3Ti4O12 ceramics

Effects of Sm³⁺ substitution on the microstructure and dielectric properties of CaCu₃Ti₄O₁₂ ceramics were investigated. The grain size of CaCu₃Ti₄O₁₂ ceramics was greatly decreased by doping with Sm³⁺, resulting from the ability of Sm³⁺ to inhibit the grain growth rate. This result can cause a decrease in the dielectric constant (?′) and loss tangent (tan δ) of CaCu₃Ti₄O₁₂ ceramics. Interestingly, high dielectric permittivity (?′ ～ 10,863) and low loss tangent (tan δ ～ 0.043 at 20 °C and 1 kHz) were observed in the Ca_0.925Sm_0.05Cu₃Ti₄O₁₂ ceramic. Nonlinear electrical properties of CaCu₃Ti₄O₁₂ ceramics were modified by doping with Sm³⁺. The dielectric relaxation behavior of Sm-doped CaCu₃Ti₄O₁₂ ceramics can be well ascribed based on the internal barrier layer capacitor model of Schottky barriers at the grain boundaries.     

Low temperature sintering and microwave dielectric properties of Ba4Sm9.33Ti18O54 ceramics

The effect of BaCu(B₂O₅) (BCB) on the sinterability, microstructure and microwave dielectric properties of Ba₄Sm_9.33Ti₁₈O₅₄ (BST) has been investigated. Dilatometric measurements reveal that the sintering temperature of BST can be reduced by the addition of BCB. Microstructural analysis shows abnormal grain growth with large amount of BCB. A ceramic composite with Q × f = 4000 GHz, ?_r = 52 and τ_f = ?29 ppm/°C which can be sintered at 950 °C is obtained when 10 wt% BCB is added to BST. EDS analysis shows that the composite is chemically compatible with silver.     

Sandwiched BaNd2Ti4O12/Bi4Ti3O12/BaNd2Ti4O12 ceramics prepared by spark plasma sintering

Spark plasma sintering (SPS) combined with heat treatment was investigated to prepare laminated ceramics from compositions having quite different sintering temperatures. Although the optimal sintering temperature of BaNd₂Ti₄O₁₂ (BNT) ceramics was much higher than that of Bi₄Ti₃O₁₂ (BIT) ceramics, sandwiched BaNd₂Ti₄O₁₂/Bi₄Ti₃O₁₂/BaNd₂Ti₄O₁₂ (BNT/BIT/BNT) composite ceramics were successfully prepared with this new method. The results of scanning electron microscopy (SEM) and electron probe microanalysis (EPMA) showed that the BNT layers and the BIT layer were well bonded and no significant diffusion between them was observed. The temperature coefficient of dielectric constant of the laminated ceramic was found to be much smaller than that of BNT ceramic.     

Phase formation and microwave dielectric properties of Pb2+ and Sr2+ doped La4Ti9O24 ceramics

Phase formation and microwave dielectric properties of the Pb²⁺ and Sr²⁺ doped La₄Ti₉O₂₄ ceramics were investigated. Using electron diffraction and Rietveld analysis of the X-ray powder diffraction patterns, we show that the increase in the concentration of Pb²⁺ and Sr²⁺ doping results in the structural transition from La₄Ti₉O₂₄ to a La_2/3TiO₃-type phase (Ibmm, No. 74). A change in the crystalline phase considerably affects the microwave dielectric properties, increasing the ɛ_r from 37 to 130, reducing Q × f from 25,000 to 5500, and increasing temperature coefficient of the resonant frequency (TCF) from 15 to 300 ppm/°C.     

Influence of sintering temperature on secondary phases formation and microwave dielectric properties of Ca2Ce2Ti5O16 ceramics

Ca₂Ce₂Ti₅O₁₆ dielectric ceramics prepared by conventional solid-state ceramic route was investigated. Phase composition and microwave dielectric properties were measured using XRD and Vector network analyzer, respectively. XRD analysis of the calcined and sintered samples revealed the formation of CeO₂ and another unidentified phase (that vanished at ? 1400 °C) as secondary phases along with the parent Ca₂Ce₂Ti₅O₁₆ phase. The amount of the parent Ca₂Ce₂Ti₅O₁₆ phase increased with increasing sintering temperature from 1350 °C to 1450 °C accompanied by a decrease in the apparent density. The density decreased but ? _r and Q _u f _o increased with sintering temperature. An ? _r ～ 81.5, Q _u f _o ～ 5915 GHz and τ _f ～ 219 GHz were achieved for the sample sintered at 1450 °C.     

Ti4+取代Zn2+、Nb5+对Bi2O3-ZnO-Nb2O5系介质材料结构和性能的影响

研究了Ti4 取代Zn2 ,Nb5 对Bi2O3-ZnO-Nb2O5系介质材料结构和性能的影响，研究表明，少量替代对于材料的结构和性能没有太大的影响；随着替代量的增加，相结构中出现正交Bi4Ti3O12相；微观形貌中出现棒晶，介电常数逐渐增大，温度系数逐渐向负温度系数方向移动，适量Ti4 替代可以获得性能很好的NP0介质材料。     

Effect of different raw materials on the microwave dielectric properties of Ba2Ti9O20 ceramics

Dibarium nona titanate (Ba₂Ti₉O₂₀) dielectric ceramics have been prepared through solid-state route using raw materials of different origin. The dielectric resonator properties are studied in the microwave frequency region. The impurities in the raw materials drastically affect the microwave dielectric properties of Ba₂Ti₉O₂₀. Presence of TiO₂, which deteriorates the temperature coefficient of resonant frequency can be identified clearly by XRD in the range 40–45° of 2.     

Effect of V2O5 and CuO additives on sintering behavior and microwave dielectric properties of BiNbO4 ceramics

The influences of V₂O₅ and CuO additives on the sintering behavior and microwave dielectric properties of BiNbO₄ ceramics were investigated. The V₂O₅ and CuO additives lowered the sintering temperature of BiNbO₄ ceramics to the range 875 °C–935 °C. All BiNbO₄ compounds with additives had the orthorhombic structure. The dielectric constant _r was not significantly changed, while the unloaded Q value was affected with additives. The Qf value was found to be a function of the sintering temperatures and the amount of additives. It varied from 4500 to 15800 (GHz) and 1000 to 8000 (GHz) with additives V₂O₅ and CuO, respectively. The _f values were increased in positive values with V₂O₅ doped, while decreased in negative values with CuO addition. V₂O₅ and CuO additives effectively improved the densification and dielectric properties of BiNbO₄ ceramics. The correlation between the microstructure and the Qf value was observed with different additives.     

Effects of Kaolinite additions on sintering behavior and dielectric properties of CaCu3Ti4O12 ceramics

Commercial Kaolinite was employed as sintering aid to reduce the sintering temperature of CaCu₃Ti₄O₁₂ (CCTO) ceramics. The effects of Kaolinite content and sintering temperature on the densification, microstructure and dielectric properties of CCTO ceramics have been investigated. The density characterization results show that the addition of Kaolinite significantly enhanced the relative density of CCTO ceramics to about 92 %. X-ray diffraction results show CCTO ceramics with a low amount of Kaolinite exhibited perovskite-like structure, but 1.0 wt% Kaolinite additions resulted in the formation of a secondary phase, CaO–TiO₂–Al₂O₃–SiO₂ glass phase was formed and improved the dielectric constant of ceramics, which was supported by scanning electron microscopy–energy dispersive X-ray results. CCTO ceramic with 1.0 wt% Kaolinite addition possessed well temperature and frequency stability of dielectric constant. It was found that Kaolinite lowered the dielectric loss of the samples.