纳米颗粒Ag2Te掺杂p-(Ag2Te)x(Bi0.5Sb1.5Te3)1-x的快速热压制备和热电性能表征

通过溶剂热法制备出六方相Bi2 Te3纳米粉体,采用真空封管熔炼法得到Sb掺杂的Bi0.5Sb1.5Te3合金.采用溶剂热法合成粒度为40 nm的Ag2 Te纳米粉体,并通过高能球磨工艺将其掺入Bi0.5Sb1.5Te3合金,从而得到p-(Ag2 Te)x(Bi0.5 Sb1.5 Te3)1-x合金(x为Ag2 Te摩...     

快速热压制备(AgSbTe_2)_x(Pb_(0.5)Sn_(0.5)Te)_(1-x)半导体材料及热电性能研究

为了进一步提高PbTe系列合金的热电性能和降低生产成本,采用溶剂热反应合成平均粒度为500 nm的PbTe粉末,以所合成的PbTe粉末为主要原料通过封管熔炼法制备(AgSbTe2)x(Pb0.5SnvTe) 1-x(x=0,0.05,0.1,0.15,0.2)系合金.所得合金锭经过高能球磨制成微米级的超细合金粉,再通过快速热压烧结制备测试用的多晶试样,所有试样的相对密度均达到90%以上.通过XRD和SEM等手段分析材料的物相组成和微观结构,研究x的变化对于该体系材料热电性能(电阻率、Seebeck系数、热导率和ZT值)的影响.研究表明,当X取值为0.1时该体系材料的热电性能得到最优化,在575 K时取得最人的ZT值为1.093.     

In掺杂Ag_(0.8)Pb_(18)SbTe_(20)热电材料的快速热压制备及性能表征

研究了快速热压工艺和In掺杂对Ag0.8Pb18SbTe20基热电材料微结构和热电性能的影响。采用真空封管熔炼法成功制备n型Ag0.8Pb18InxSb1-xTe20(x=0.25,0.5,0.75,1)合金粉末材料,同时结合高能球磨使合金粉末粒度达到微米量级。利用快速热压烧结工艺,在693 K温度、15 MPa压力下烧结30 min,制备块体热电材料。研究结果表明,In对Sb的取代增加了热电材料的电导率,改善了材料的热电性能。当In掺杂量x=1时,材料于623 K的电导率达到最大值239 S/cm;当x=0.5时,材料于623 K的功率因子达到最大值3.1×10-3W/(m.K2)。     

用甘氨酸法合成Sm0.1Ca0.9MnO3粉体及热电性能表征

以Sm2O3、CaCO3、乙酸锰和硝酸为原料,采用改进的甘氨酸-硝酸盐法制备Sm0.1Ca0.9MnO3粉末,经过压制和烧结制备热电材料。用X射线衍射、扫描电镜和激光粒度仪等对粉末进行表征,并研究该热电材料的性能。结果表明,Sm0.1Ca0.9MnO3粉末为单一的钙钛矿相结构,粉末体为细小晶粒的团聚体,呈链状结构,粒度范围1.436~12.118μm。Sm0.1Ca0.9MnO3粉体的压形规律符合黄培云压制方程,压制模量M为1.124 7 MPa,非线性指数m为4.544 5;随着Sm3+的掺杂,Sm0.1Ca0.9MnO3材料的电阻率减小;随温度升高,发生半导体向金属的转变现象,在473 K时Sm0.1Ca0.9MnO3块体的功率因子达到6.0×10-4 W/(m-K2)。因此,Sm0.1Ca0.9MnO3是1种具有潜在应用前景的n型热电材料。     

闪蒸法制备N型Bi2( Te0.95Se0.05)3薄膜的微结构及热电性能研究

采用闪蒸法在温度为473 K的玻璃基体上沉积了厚度为800 nm的N型Bi2(Te0.95Se0.05)3热电薄膜,并在373 ～573 K进行1h的真空退火处理.利用X射线衍射(XRD)、场发射扫描电子显微镜(FESEM)分别对薄膜的物相结构和表面形貌进行分析.采用表面粗糙度测量仪测定薄膜厚度,薄膜的电阻率采用四探针法进行测量,采用温差电动势法在室温下对薄膜的Seebeck系数进行表征.沉积态薄膜表明了(015)衍射峰为最强峰,退火处理后最强衍射峰为(006);沉积态薄膜由许多纳米晶粒组成,晶粒大小分布较均匀,平均晶粒尺寸大约45 nm,退火处理后出现了斜方六面体的片状晶体结构.退火温度从373 K增加到473 K,薄膜的电阻率和Seebeck系数增加,激活能也随退火温度的增加而增大,退火温度从523 K增加到573 K,薄膜的电阻率和Seebeck系数都缓慢下降.从373 ～473 K,热电功率因子随退火温度的升高而单调增加,退火温度为473 K时,电阻率和Seebeck系数分别是2.7 mΩ.cm和-180μV·K-1,热电功率因子最大值为12 μW.cmK-2.退火温度从523 K增加到573 K,热电功率因子的值逐渐下降.     

(Bi_2Te_3)_x/（PbSe)_(1-x)的制备与特性研究

本研究利用粉末冶金方法制备(Bi_2Te_3)_x/(PbSe_3)_(1-x),先将Bi_2Te_3与PbSe粉末均匀混合,然后冷压压力500 MPa,300 K保温烧结1 h,最后对其微观结构与热电性质进行了探讨。研究结果表明冷压时施予极大压力使得试片中出现许多细小颗粒,并有大量纯Se相析出,严重影响其热电性质。x=0.4时试片电阻率高于x=0.5与0.6时,室温下x=0.5时试片电阻率最小;x=0.5时试片的席贝克系数最大,约176.8μV/K,即席贝克系数随PbSe含量增加而变大;x=0.5与0.6时试片的热导率在温度高于280 K以后趋于平衡,而x=0.4时试片的热导率在温度高于230 K以后呈下降趋势,室温300 K下x=0.5时试片的热导率最大,约1.772 W/(m·K)。所有试片的ZT皆随测量温度的升高而增大,且x=0.5时试片于室温下具有最大的ZT,可达0.008 5。     

Bi_2Te_3基制冷晶棒加工废粉料的回收与热电性能的优化

针对半导体制冷行业P型Bi_2Te_3基制冷晶棒的生产与加工过程中产生的废粉料,经过真空煅烧、1次熔炼及2次熔炼除去粉料中的杂质,获得Bi_2Te_3基粉末,然后加压烧结,制备P型Bi_2Te_3基块体材料,测定材料的热电性能,并通过在除杂后的Bi_2Te_3基粉末中加入单质Sb和Te,进行成分优化。结果表明,废粉料的回收率达到85.73%以上,采用废粉料制备的P型块体Bi0.53Sb1.3Te3合金在室温下的电导率仅为331.79 S/cm,热电优值为0.75。在除杂后的废粉料中加入单质Sb和Te后制备的Bi0.36Sb1.64Te3合金在室温下的电导率达到970 S/cm,热电优值为1.13,350 K下的热电优值为1.23,并且在300~470 K温度范围内的热电优值都超过1.0,性能超过了采用高纯原材料生产的P型区域熔炼产品,能够满足生产企业的要求。     

In掺杂对p型Bi_(0.3)Sb_(1.7)Te_3合金热电性能的影响

以p型Bi_(0.3)Sb_(1.7)Te_3合金为研究对象,探究In掺杂对其电声传输性能的影响。研究发现,随着In含量的增加,Seebeck系数上升,电导率降低,且当In含量为0.025时材料具有最优的PF,为37.02μW/(K~2·cm)。此外,In掺杂增加了材料中点缺陷的浓度和晶格畸变的程度,加强了对声子的散射,故材料热导率下降。因此,当In含量为0.050时,样品在401 K下有最优的ZT,为1.11。本文为提升p型Bi_(0.3)Sb_(1.7)Te_3合金热电性能提供了一种行之有效的方法,增加了热电材料实际应用的潜力。     

同质界面浓度对P型Bi_(0.5)Sb_(1.5)Te_3合金热电性能的影响

界面对材料的电声输运性能具有明显的调控作用。基于此,探究了同质界面浓度对P型Bi_(0.5)Sb_(1.5)Te_3合金热电性能的影响。结果表明:随着同质界面浓度的增大,材料的电导率降低,Seebeck系数增大;界面浓度增加强化了对声子的散射,故热导率降低;经1min粉碎的烧结样品具有更优的高温电学性能,故其高温端热电性能更优。     

Na1.7-x CaX (Co0.85Cu0.15)2O4粉体的制备及其热电性能的研究

本文采用自蔓延法与固相反应相结合的方法,以Na2CO3、CaCO3、Co(NO3)2·6H2O、CuO、HNO3为原料,去离子水为溶剂,柠檬酸为螯合剂,制备了Na1.7-xCax(Co0.85Cu0.15)2O4(0≤x≤0.20)粉体.对制备的粉末XRD以及烧结试样的SEM进行分析.结果表明随着Ca2+掺杂量的增加,...     

Studies on electrical properties and CO-sensing characteristics of La_（0.9） _（0.1）FeO_3

Semiconducting sensors offer an inexpensive and simple method for monitoring gases. Sensors based on the ABO3-type composite oxides materials have an advantage of high stability. The perovskite structures of these compounds are preserved, when an A-site deficiency of some perovskite structure compounds was formed. However, they exhibit particular physical properties. In this paper, La0.9 0.1FeO3 powder with an orthorhombic perovskite phase was prepared by sol-gel method. The electrical properties and CO-sensing characteristics of the La0.9 0.1FeO3 were also investigated. The results demonstrated that the La0.9 0.1FeO3 was a p-type semiconductor material. Compared with LaFeO3, the conductance of La0.9 0.1FeO3 was better than that of LaFeO3. The sensor based on La0.9 0.1FeO3 showed excellent CO gas-sensing characteristics.     

Humidity sensing properties of La^3＋ and K^＋ co-doped Ti0.9Sn0.1O2 thin films

The humidity sensing properties of La3+ and K+ co-doped Ti0.9Sn0.1O2 thin films were investigated. The humidity sensitive thin films were prepared by sol-gel method on alumina substrates. The sensing behaviors of thin films were inspected at different sintering temperatures by constructing a humidity-impedance measuring system. It was found that the addition of rare earth ion La3+ and alkali ion K+ was beneficial for improving the humidity sensitive properties of the samples and La0.003K0.5Ti0.9Sn0.1O2 sintered at 500 ℃ for 4 h showed the best humidity sensing properties. The impedance of this thin film decreased from 109 to 104 Ω with excellent linearity in the humidity range of 11%-95%. Narrow hysteresis loop, prominent stability and high sensitivity were obtained. The effects of dopant con-tent and doping mechanism on humidity sensitivity were also discussed in terms of segregation of rare earth ions at grain boundaries and granularity of crystalline and influence of K+ on the decrease in the intrinsic resistance of the materials, and increase in the number of wa-ter adsorption sites.     

Effect of Mn on the Magnetostriction and Magnetic Properties in Zr_(0.1)Tb_(0.9)(Fe_(1-x)Mn_x)_2 and Y_(0.1)Tb_(0.9)(Fe_(1-x)Mn_x)_2

Effect of Mn substitution for Fe in cubic Laves Zr_(0.1)Tb_(0.9)(Fe_(1-x)Mn_x)_2 and Y_(0.1)Tb_(0.9)(Fe_(1-x)Mn_x)_2 com-pounds is presented.Similar results in both systems are obtained: The structure and the magnetism of TbFe_2 areboth influenced slightly by a small amount of Y or Zr substitution for Tb;With increasing x value,the latticeconstant increases monotonously;the Curie temperature decreases linearly;while saturation magnetizationincreases linearly.For the small amount of Mn substitution for Fe in both systems,magnetostriction issignificantly larger than that in the pure iron alloys.The largest magnetostriction of|γ_‖-|γ_|=2200×10~(-6)at magnetic field of 2×10~7/4π A/mis obtained for Y_(0.1)Tb_(0.9)(Fe_(0.95)Mn_(0.05)_2.     

La0.9Sr0.1Ga0.8Mg0.2O3-δ电解质材料的合成及性能研究

对合成La0.9Sr0.1Ga0.8Mg0.2O3-δ(LSGM)电解质的制备过程做了TG-DTA分析,然后采用固相法合成LSGM电解质材料。利用XRD、粒度分析、交流阻抗谱等检测技术,对LSGM电解质结构及性能进行表征。XRD分析表明,在1 000℃烧结后,粉体开始形成钙钛矿结构,随着温度的升高,粉体中杂相含量越来越少,经1 000℃和1 450℃两次烧结后,形成了单一的钙钛矿结构相;粒度分析表明,合成电解质粉体的粒径较为合理;交流阻抗谱检测表明,烧结样品具有稳定的离子电导性能,在800℃时,电导率约为1.2S/m。     

固溶体Er_(2-x)Ho_x(WO_4)_3的热膨胀性能研究

用固相化学反应法制取了Er2-xHox(WO4)3(x=0.0～0.4,1.2～2.0)系列固溶体,利用XRD实验及Rietveld结构精修分析研究了Er2-xHox(WO4)3系列固溶体的晶体结构和热膨胀性能,结果表明Er2-xHox(WO4)3(x=0.0～0.4,1.2～2.0)系列化合物沿着三个晶向是呈异性负热膨胀性能。     

真空电弧等离子体合成(BixSb1-x)2Te3纳米粉末材料

以单质Bi,Sb和Te粉末为原材料,通过真空电弧等离子体蒸发法合成了(Bi<,x>Sb<,1-x>)<,2>Te<,3>热电粉末材料.采用X射线衍射(XRD)、能谱分析(EDS),场发射扫描电子显微术(FE-SEM),透射电子显微术(TEM)和选区电子衍射(SAED)分析方法对(Bi<,x>Sb<,1-x>)<,2>Te<,3>粉末材料的物相结构、成分和形貌进行了表征.XRD图谱的3强衍射峰分别为(015),(1010)和(110),(Bi<,x>Sb<,1-x>)<,2>Te<,3>纳米粉末的XRD图谱与标准XPD图谱峰(49-1713)相对应,宽化的衍射峰表明了粉末的晶粒具有纳米尺度.能谱定量分析表明Bi和Sb的原子百分比分别为18.1%,20.3%,两者原子百分比之和为38.4%,Te的原子百分比是61.6%.场发射扫描电子显微分析表明纳米粉末颗粒尺寸比较均匀,粉末存在团聚现象,大多数粉末都呈椭球形.透射电子显微分析表明(Bi<,x>Sb<,1-x>)<,2>Te<,3>纳米粉末的平均粒径约为50 mm,粉末呈不规则的多面体结构,还有一些薄片状和棒状的结构,这与Bi<,2>Te<,3>基半导体化合物的高度各向异性是一致的.(Bi<,x>Sb<,1-x>)<,2>Te<,3>纳米粉末的选区电子衍射图表明每一个颗粒是由许多小晶核组成的,证明了颗粒是以纳米尺度生长.由于晶粒取向随机,且晶粒细小引起有许多衍射斑组成的衍射环的宽化,揭示了(Bi<,x>Sb<,1-x>)<,2>Te<,3>纳米粉末的多晶结构.     

Cu_x(Al_2O_3)_(1-x)颗粒膜的巨霍耳效应研究

在由磁性金属颗粒镶嵌在非磁金属或绝缘基体中而形成的两相非均匀颗粒系统中 ,当磁性金属的体积百分含量处于临界值时 ,体系的输运行为有许多奇异的现象。相继在在磁性金属 非磁金属和磁性金属 绝缘体系统中发现了巨磁电阻效应和隧道磁电阻效应 ;特别的在磁性金属 绝缘体系统中发现了反常霍耳效应的极大增强 ,称为巨霍耳效应。为了探讨颗粒体系的巨霍耳效应的机制 ,本文用离子束共溅射的方法制备了大约 1.5× 10 - 7m厚度的Cux(Al2 O3) 1 -x颗粒薄膜 ,研究了非磁金属 绝缘体体系 :Cu Al2 O3颗粒系统的巨霍耳效应 ,发现在量子渗流阈值时 ,霍耳电阻比正常金属高 2个数量级。     

Growth,structure and spectral characteristics of KEr_(0.1)Yb_(0.9)(WO_4)_2 laser crystal

The 10 at.% Er3+-doped KYb(WO4)2(KEr0.1Yb0.9(WO4)2) laser crystal with dimensions up to 25 mm×15 mm×10 mm was grown by the Kyropoulos method.The crystal structure was identified as β-KEr0.1Yb0.9(WO4)2 by XRD analysis.Through TG-DTA curves,the melting point and transition point of the crystal were determined to be 1058 and 1031 °C,respectively.Infrared spectrum and Raman spectrum were measured,and the vibration frequencies of infrared and Raman active modes for the crystal were assigned.The absorption cross section is 3.1×10-20 cm2 at chief peak of 981 nm with the absorption line width of 26 nm.Based on the Judd-Ofelt theory,the intensity parameters ?λ(λ=2,4,6) calculated were:?2=16.34×10-20 cm2,?4=4.18×10-20 cm2,and ?6=1.26×10-20 cm2.There was a strong emission peak near 1533 nm and the emission line width at the main peak at 1533 nm run up to 55 nm with the emission cross section of 3.47×10-20 cm2 .These optical parameters indicated the potential of this crystal used as an excellent laser material for 1540 nm nearby human-eye safe.