中红外4 μm波长下MgF2晶体脊形光波导的制备及特性研究（特邀）

为了研究离子与中红外晶体相互作用的机理,探索中红外晶体光波导的制备和性能,采用离子辐照技术结合精密金刚石刀切割,在MgF₂晶体材料中制备了深度17.5 μm、宽度14 μm的脊形光波导。采用SRIM软件模拟了C5+离子辐照MgF₂晶体的电子能量损伤和核能量损伤的过程,分析了波导的形成机理;模拟了波导的折射率变化,并对波导的近场模式进行了实验测量和理论模拟;采用热退火处理来降低波导的传输损耗,将传输损耗降低为0.4 dB/cm;微拉曼光谱证明离子辐照过程并未对MgF₂晶体波导区造成较大的晶格损伤。该工作表明,离子辐照技术结合划片机精密切割是一种十分成熟的脊形波导制备手段,制备的MgF₂晶体脊形光波导在中红外集成光学和光通讯领域具有广泛的应用前景。     

A novel self-aligned fabrication process for nickel-indiffusedlithium niobate ridge optical waveguides

A novel self-aligned fabrication process for LiNbO₃:Ni ridge waveguides has been proposed. By using the self-aligned trilayered structure composed of Ni-Ti-Si, the fabrication process is significantly simplified, and takes advantage of suppression of the unwanted planar waveguides and high-coupling efficiency to a single-mode fiber as compared to the conventional processes. Detailed investigations into the characteristics of the ridge waveguides have also proved to be informative under different fabrication parameters. Moreover, the novel self-aligned fabrication process was applied to fabricate a ridge waveguide Mach-Zehnder modulator. The measured half-wave voltage and extinction ratio mere 20.5 V and 12 dB (@1.3 μm), and were 4.2 V and 8 dB (@0.6328 £gm)     

Mode Converters for Coupling to High Aspect Ratio Silicon-on-Insulator Channel Waveguides

The design, simulation, and experimental performance of mode converters for coupling from single-mode silicon-on-insulator ridge waveguides to high aspect ratio channel waveguides are described. The converters consist of a two-level adiabatic taper structure. The final channel waveguide is 1.5 mum high by 0.8 mum wide. Simulations predict that for total coupler lengths longer than 20 mum, the coupling loss from the fundamental ridge mode to the slit mode is better than -0.2 dB. The couplers and waveguides were fabricated using a two-step self-aligned process. The measured coupling loss for fabricated mode converters is -0.4 dB     

Lithium Niobate Ridge Waveguides Fabricated by Wet Etching

The fabrication of LiNbO₃ ridge waveguides etched by a mixture of HF and HNO₃ using chromium (Cr) stripes as masks is reported. Smooth etched surfaces are obtained by adding some ethanol into the etchant. Under-etching is nearly avoided by annealing the sample with the Cr masks before the wet etching process. Low-loss monomode ridge guides with a height of up to 8 mum and a width between 4.5 and 7.0 mum are demonstrated. As an example, the propagation losses in a 6.5-mum-wide and 8-mum-high structure are 0.3 dB/cm for transverse-electric and 0.9 dB/cm for transverse-magnetic polarization, respectively, at 1.55-mum wavelength     

Fabrication of a novel lumped electro-absorption modulator with a lower RC-time constant

A novel lumped electro-absorption modulator with a charge layer and an undercut ridge waveguide (DU-EAM) was fabricated and measured.Also,two other kinds of EAM with straight ridge waveguides,one with a charge layer(D-EAM) and another with no charge layer(N-EAM),were fabricated and tested to ensure that the design of the DU-EAM would reduce the RC-time constant.The measured capacitance of the D-EAM and the DU-EAM is lower than that of the N-EAM under reverse bias voltage from -1 to -8 V due to the inserted charge layer.The capacitances of the N-EAM,the D-EAM and the DU-EAM are 0.375,0.225 and 0.325 pF,respectively, at -3 V.In addition,the DU-EAM had a larger extinction ratio(25 dB at -3 V) and higher modulation efficiency (13 dB/V between -1 and -2 V) than two other straight-ridge-waveguide ones(the D-EAM performed 22 dB and 10 dB/V,the N-EAM performed 20 dB and 10 dB/V) due to the 5.2μm wider active region.     

Fabrication of ridge waveguides in LiNbO3 thin film crystal by proton-exchange accelerated etching

A simple fabrication method of adhered LiNbO₃ ridge waveguides by accelerated etching of the proton-exchanged region is proposed and demonstrated. The waveguides were fabricated and tested at 1.55 mum wavelength. Strongly confined guided modes were obtained. The waveguides are suitable for efficient nonlinear-optic wavelength conversion devices.     

Mach-Zehnder modulators with lithium niobate ridge waveguidesfabricated by proton-exchange wet etch and nickel indiffusion

Mach-Zehnder ridge waveguide modulators on c⁺-LiNbO₃ by proton-exchange wet etch and nickel indiffusion are fabricated for the first time. Modulators operating at 0.633 μm and 1.31 μm are both produced, and the half-wave voltages are measured to be 4 V and 22.5 V, respectively, for an electrode length of 6 mm. The extinction ratios are 14 dB and 13.2 db, respectively, and can be improved by forming the ridge structure only at the electrode interaction region instead. These results make the wet-etched LiNbO₃ optical devices promising to take over the dry-etched ones in the near future     

Optical signal distribution to MSM photodetector arrays viaintegrated polyimide waveguides

The integration of metal-semiconductor-metal (MSM) photodetector arrays with polyimide ridge waveguides is demonstrated. MSM detectors were fabricated using transparent indium tin oxide (ITO) interdigitated electrodes on semi-insulating GaAs substrates. An optical buffer layer of SiO₂ was deposited and patterned, and then polyimide ridge waveguides were fabricated on top by spin coating and photolithography. The guides were multimode with widths from 10 to 50 μm. Light at 830 nm was coupled efficiently from the waveguides through gaps in the SiO ₂ buffer layer into the underlying detector structures. Absolute responsivities of the integrated MSM devices were around 0.5 A/W and the 3 dB bandwidths of 5-6 GHz were measured. Division of the input signal between sets of two and four detectors under a single waveguide has been achieved, highlighting the potential for the fabrication of integrated optoelectronic switches     

Compact Bends for Achieving Higher Integration Densities for LiNbO$_{3}$ Waveguides

A new waveguide platform is demonstrated that allows the bend radii to be substantially decreased for titanium-diffused lithium-niobate (LiNbO₃) waveguides using vertically integrated arsenic-trisulfide (As₂S₃) overlay waveguides. Power is transferred from a Ti-diffused waveguide into the overlay waveguide using tapers, guided by the As₂S₃ waveguide through the S-bend region and transferred back into another Ti-diffused waveguide. This structure also behaves like a polarization beam splitter. We present simulation results as well as measurements to show the feasibility of achieving low loss and reduced bend radii for electrooptic waveguides.     

40 Gbit/s electroabsorption modulated distributed feedback laser

A 40 Gbit/s multi-quantum well (MQW) electroabsorption modulator (EAM) with a lumped electrode monolithically integrated with a distributed feedback (DFB) laser is demonstrated. Superior characteristics are exhibited for the device, such as low threshold current of 18 mA, over 40 dB side-mode suppression ratio at 1 550 nm and more than 30 dB extinction ratio when coupled into a single-mode fiber. By adopting deep ridge waveguide and planar electrode structures combined with buried benzocyclobutene (BCB), the capacitance of the EAM is reduced down to 0.18 pF and over 33 GHz modulation bandwidth at a small signal has been demonstrated. Negative chirp operation is realized when the bias voltage is beyond 1.6 V.     

Wet-etched ridge waveguides in y-cut lithium niobate

By the technique of nickel indiffusion proton exchange (NIPE) and the technique of buffered proton exchange (PE) melt, wet-etched ridge waveguides in y-cut LiNbO₃ are fabricated for the first time. The fabricated ridge waveguides have smooth surfaces and are good enough for low-loss waveguides. Moreover, a ridge waveguide Mach-Zehnder modulator in y-cut LiNbO₃ is fabricated. The measured half-wave voltage is about 30% lower than that of a conventional modulator. The wet-etched ridge waveguides in y-cut and z-cut substrates are also characterized for comparison     

太赫兹矩形波导与共面波导耦合结构设计

太赫兹（THz）波位于微波与红外光波之间,现有微波和光波段波导技术应用正在向THz波段拓展。但是,由于水汽对THz波的强吸收及制造工艺等原因,THz器件主要是平面结构,而THz源及其传输需要用矩形波导。因此,矩形波导与共面波导之间的转换结构成为决定元件和系统性能的关键部分。该设计利用脊波导进行阻抗匹配及电磁场模式转换,实现THz波矩形波导到共面波导的高效率耦合。结果表明,在0.2~0.4 THz频段内,该转换结构的传输系数(S₂₁)高于?3 dB,可以对THz电磁场进行高效率转换。该结果可用于太赫兹分子探测、太赫兹通信等领域,为0.2 THz以上太赫兹的模式转换提供了一种可行方案。     

光子晶体双波长电光调制和模分复用集成器件

为了实现光电子器件小型化和多功能化,进一步提高信息传输容量和速度,提出了一种基于光子晶体双波长电光调制和模分复用的片上集成器件。该集成器件的电光调制模块由硅基光子晶体波导和两个L3型复合腔组成,模分复用模块由硅基非对称平行纳米线波导组成,两个模块的连接处采用硅基光子晶体波导。采用L3型复合腔和PN掺杂结构实现两个波长TE₀模的调制,采用非对称定向耦合结构将两个波长的TE₀模转换为TE₁模。应用基于三维时域有限差分法（3D-Finite Difference Time Domain,3D-FDTD）的Lumerical软件进行仿真分析,结果表明,在调制电压为1.05 V时,该集成器件可以实现中心波长为1 552.1 nm和1 556.1 nm的 TE₀模、TE₁模通断调制及两模式模分复用功能。该器件的消光比高达24.67 dB,调制深度均为0.99,插入损耗小于0.57 dB,信道串扰小于?34.68 dB,调制速率最低为17.54 GHz。该集成器件结构紧凑,可望应用于高速大容量光通信系统。     

Wide Temperature Range Operation of a 1.55-$mu$m 40-Gb/s Electroabsorption Modulator Integrated DFB Laser for Very Short-Reach Applications

We present the uncooled operation of a 1.55- mum 40-Gb/s InGaAlAs electroabsorption modulator (EAM) integrated distributed-feedback (DFB) laser within a temperature range of 95degC (-15degC to 80degC ). To the best of our knowledge, this is the largest temperature range reported so far for such a 40-Gb/s EAM integrated DFB laser. We designed the EAM to operate at high speed by reducing the electrical parasitics, and we achieved a 3-dB frequency bandwidth of over 39 GHz for an EAM length of less than 150 mum. We demonstrated a 2-km single-mode fiber (SMF) transmission at 40-Gb/s over a wide temperature range of -15degC to 80degC by adjusting only the bias voltage to the EAM while keeping the modulation voltage swing constant at 2.0 V when the temperature changed. We achieved a dynamic extinction ratio of over 8.2 dB and a 2-km SMF transmission with a power penalty of less than 2 dB over a wide temperature range.     

Lithium niobate ridge waveguides fabricated by wet etching

The authors report a novel method for fabricating proton exchanged LiNbO₃ ridge waveguides by the wet etching of proton-exchanged LiNbO₃. To demonstrate a simple and easy application of the LiNbO₃ ridge waveguide, a Mach-Zehnder interferometric modulator with selfaligned electrode was fabricated     

A Short Polarization Converter Using a Triangular Waveguide

A novel polarization converter using a triangular waveguide is proposed and analyzed by the imaginary-distance beam-propagation method based on Yee's mesh and the finite-difference time-domain method. The polarization conversion length is investigated as a function of relative refractive index difference. It is found, for a silicon core embedded in a silica cladding, that the conversion length is 2 mum, while the insertion loss is 0.5 dB at a wavelength of 1.55 mum. The extinction ratio is more than 20 dB over a wide wavelength range of 1.25 to 1.65 mum. Using a geometrically expanded model, the polarization conversion behavior is verified in the experiment at a microwave frequency of 15 GHz. Finally, reasonable polarization conversion is obtained with a modified structure, in which the two corners of the triangular waveguide are cut and the cut plane is aligned with a square input (output) waveguide.     

Fabrication of LiTaO3 optical waveguides by Ni diffusionbelow the Curie temperature

Using Ni diffusion into LiTaO₃ below the Curie temperature for the fabrication of optical waveguides was presented for the first lime. Ordinary and extraordinary polarization waveguide modes were obtained. The index distribution profiles of both modes were measured by a prism coupler. Loss in planar waveguides at 0.6328 μm is 0.7±0.1 dB/cm for the ordinary mode and 1.3±0.2 dB/cm for the extraordinary mode. Moreover, a Mach-Zehnder interferometer was fabricated by this method for electrooptic characterization. The measured half-wave voltage is 5.5 V and the extinction ratio is greater than 29 dB     

Optical Pressure Sensors Based on Vertical Directional Coupling With Flexible Polymer Waveguides

An optical pressure sensor based on the radiation coupling in vertical direction between a channel waveguide and a flexible polymer waveguide is proposed. The flexible waveguide is bent by an applied pressure to reduce the separation distance between the two waveguides so that the light propagating in the channel waveguide is radiated into the flexible planar waveguide. By applying a pressure ranging from 100 to 500 kPa, the output intensity modulation of 20 dB is obtained by virtue of the efficient phase matched coupling between the waveguides made of the same polymer material. The large extinction ratio is useful to measure the pressure precisely for a wide range.      

Characteristics of native-oxide-confined InGaP-(AlxGa1-x)0.5In0.5P quantum-well ridgewaveguide lasers

We report 670-nm native-oxide confined GaInP-(Al_xGa_1-x)_0.5In_0.5P quantum-well ridge waveguide laser diodes. The devices are fabricated from a compressively strained GaInP-(Al_xGa_1-x)_0.5In_0.5P quantum-well separate confinement heterostructure laser structure. Wet chemical etching and wet oxidation process are used to form native oxide confined ridge waveguides. The oxidation process converts the p-Al_0.5In_0.5P cladding layer into AlO_x after ridge etch. Laser diodes of 3.5-μm-wide ridge waveguide operate with threshold currents below 13.5 mA and differential quantum efficiencies over 35%/facet     

Zn indiffusion waveguide polarizer on a Y-cut LiNbO3 at1.32-μm wavelength

A polarization-dependent loss measurement of Zn indiffusion (ZI) waveguide on a Y-cut LiNbO₃ substrate is firstly reported. The measured results show that the waveguides support either a single extraordinary polarization or both extraordinary and ordinary polarizations depending on the fabrication process parameters. For the single extraordinary polarization waveguide, the measured propagation loss at 1.32-μm wavelength is 0.9 dB/cm and the best measured polarization extinction ratio is 44 dB at a distance of 1.5 cm from the input end, which are quite good for being a waveguide polarizer. Moreover, the voltage-length product measured for the ZI Mach-Zehnder modulator shows that the substrate electrooptic coefficient is not degraded