2.4GHz低相位噪声CMOS负阻LC压控振荡器设计

为了有效降低工作于射频段的全集成CIVICS负阻LC压控振荡器的相位噪声,介绍了利用电阻电容滤波技术对振荡器相位噪声的优化,并采用Chartered 0.35μm CMOS标准工艺设计了一款全集成CMOS负阻LC压控振荡器,其中心频率为2.4GHz,频率调谐范围达到300MHz,在3.3V电压下工作时,静态电流为12mA,在偏离中心频率600kHz处,仿真得到的相位噪声为-121dBc/Hz.该设计有效地验证了电阻电容滤波技术对相位噪声的优化效果,并为全集成低相位噪声CMOS负阻LC压控振荡器的设计提供了一种参考电路.     

低相位噪声低功耗LC压控振荡器的设计

在分析压控振荡器相位噪声的基础上,通过采用尾电流整形滤波技术设计了一种低相位噪声低功耗差分LC压控振荡器.电路设计采用TSMC 0.18um 1P6M CMOS RF工艺,利用Cadence软件中的SpectreRF工具对电路进行了仿真,结果显示,在电源电压VDD=1.8V时,其中心频率为1.8GHz,频率的变化范围为1.43～1.82 GHz,相位噪声为-121dBc/Hz@600kHz.静态功耗仅为2.5mW(1.8V×1.39mA).     

低相位噪声宽带LC压控振荡器设计

基于0.13μm CMOS工艺,设计了一款低相位噪声宽带LC压控振荡器。采用开关电容阵列使VCO在达到宽调谐范围的同时保持了低相位噪声。采用可变容阵列提高了VCO频率调谐曲线的线性度。仿真结果表明,在1.2 V电源电压下,电路功耗为3.6 m W。频率调谐范围4.58 GHz-5.35 GHz,中心频率5 GHz,在偏离中心频率1 MHz处相位噪声为-125d Bc/Hz。     

恒定压控增益的宽带CMOS LC VCO的设计

采用SMIC 0.18μm Mixed Signal CMOS工艺设计了恒定压控增益的宽带LC压控振荡器。采用模拟式振幅负反馈的方式,通过模拟电路实现对偏置电流的负反馈控制,同时采用了通过数字控制的单刀双掷开关控制可变电容阵列的调谐,并且对固定电容单元进行开关的方法,从而实现恒定的压控增益且相邻频带之间的频率间隔近似相等。后仿真结果表明,本设计的LC VCO调谐频率范围2.15~3.03 GHz,压控增益在全部频率调谐范围内为70~80 MHz/V,相位噪声在全部频率调谐范围内低于-120.0 d Bc/Hz@1 MHz。     

适用于频率综合器的宽带低相噪VCO设计

针对频率综合器在宽调谐范围下相位噪声变差的问题,设计了一款适用于频率综合器的宽调谐范围低相位噪声的压控振荡器;采用180nm BiCMOS工艺,运用可变电容阵列和开关电容阵列实现宽调谐范围;通过加入降噪模块,滤除压控振荡器产生的二次谐波和三次谐波,增大输出振幅,降低相位噪声;并在压控振荡器输出端加入输出缓冲器,降低频率综合器其他器件对压控振荡器的影响;通过Cadence软件对压控振荡器进行仿真,仿真结果表明：调谐电压为0.3~3V,压控振荡器的输出频率范围为2.3~3.5GHz;当压控振荡器的中心频率为3.31GHz时,在偏离中心频率10kHz、100kHz和1MHz处的相位噪声分别为-93.21dBc/Hz,-117.03dBc/Hz,-137.41dBc/Hz,功耗7.66mW;在较宽的频率范围内,取得良好的相位噪声抑制,提高压控振荡器的噪声性能,满足宽带低相噪频率综合器的应用需求。     

正交相位输出压控振荡器的低相位噪声优化设计

分析了负阻结构 LC 压控振荡器各组成部分对相位噪声的贡献途径及优化方法;介绍了利用两独立 VCO 核心输出正交相位信号的原理及其相位噪声优化方法;利用所得结论设计出工作于 ISM波段2.4GHz 的 QVCO,相位噪声在100kHz、1MHz 和3MHz 频偏处分别达到-103.3、-121.1和-125.9dBc/Hz,仅消耗功率3.8 mW;所设计电路利用 HJTC0.18μm工艺制造,占用芯片面积0.75mm×1mm。     

一种用于GPS波段的低相噪VCO设计

设计了一种工作频率为1.8 GHz的低相噪频率可调的LC压控振荡器电路。该压控振荡器采用AMOS管作为变容二极管,提高了频率的调谐范围。为了降低电路的相位噪声,设计中采用了PMOS顶部偏置电路代替底部的NMOS偏置电路,并在电路中串联了一个大电容以滤除电路中的高频噪声。仿真测试结果表明,该电路在1 MHz频偏时其相位噪声为-116.5 dBc/Hz。     

2.42 GHz宽带低相噪LC压控振荡器的设计

采用一种基于开关电容阵列(SCA)和电压、电流滤波相结合的电路结构,设计了一个宽调谐范围低相位噪声的互补交叉耦合型LC压控振荡器。利用ADS仿真软件对电路进行仿真,达到了宽调谐、低相位噪声、低功耗的要求。     

Ku波段0.18μm CMOS压控振荡器电路设计

在TSMC 0.18μm RF CMOS工艺下设计了一个Ku波段电感电容压控振荡器,该电路采用NMOS交叉耦合型,结合滤波技术降低相位噪声,并利用开关电容阵列为其扩频,使电路获得卓越的性能。后仿真结果表明,该电路实现了10 GHz~14 GHz的宽调频,在整个频带内其相位噪声低于-112 dBc/Hz在1 MHz的偏移处;在1.8 V的电压下,核心电路工作电流为5 mA。     

用负阻法实现S波段低相噪压控振荡器设计

采用分布式微带电路结构和负阻振荡法设计了频率范围为2．4—2．8GHz的压控振荡器（VCO）,根据ADS软件进行建模并仿真,确定了VCO的电路参数,同时对振荡器的相位噪声和输出功率等关键参数进行了仿真优化。最终通过对实际制作出的VCO测量,验证了该模型的准确性,频段内的相位噪声达到-90dBc,Hz@10KHz,输出功...     

Low power quadrature voltage controlled oscillator

In this article, a low voltage low power quadrature voltage controlled oscillator (QVCO) coupled by four P&N transistors is presented. First, a novel negative resistance inductance capacitor (LC) oscillator is described, the N‐metal oxide semiconductor (NMOS) and P‐metal oxide semiconductor (PMOS) transistors are in series with the LC tank in the direct‐current (DC) path, and they generate the required negative resistance to compensate the energy loss of the LC tank and maintain the steady oscillation of the oscillator. Then, based on two identical LC oscillators, four P&N transistors are used as coupling terminals to generate quadrature outputs. The proposed QVCO is designed and simulated with GlobalFoundries' 0.18 μm CMOS RF process. The Cadence IC design tools postlayout simulation results demonstrate that the oscillation frequency of the QVCO can be tuned from 2.0 to 5.6 GHz by adjusting the bias voltage, and the phase noise of the voltage controlled oscillator is ?114 dBc/Hz at 1 MHz offset. Moreover, the proposed QVCO consumes only 2.31 mW from a 1.2 V supply voltage and it occupies a compact area of 0.45 mm² including the bond pads.     

用于无线卫星通信网络系统的抑噪分频频率综合器设计

为改善传统综合器在噪声影响下分频效果差的问题,设计了用于无线卫星通信网络系统的抑噪分频频率综合器。根据抑噪分频频率综合器总体架构,设计压控振荡器,并选用MAOC-114850芯片作为压控振荡器核心芯片,依据LC压控振荡器原理电路,将压控可变电抗元件插入输入频率原件中,控制输入控制电压和振动频率,通过改变电容器的充电速率,使产生的电流源在电压控制之内。选用MB506 直插/DIP8 超高频预分频器芯片作为预分频器的核心芯片,经过多次4分频操作定制数字电路。根据环路滤波器的片上集成设计要求,采用三阶无源环路滤波器,改善电阻与电容间的相位裕度,抑噪制声。增加控制模块,限定压控振荡器的最小振荡频率范围,根据晶振参考频率确定跳频间隔,并将结果保存到分频频率综合器中,由此完成抑噪分频频率综合器设计。实验结果表明,该综合器最高分频效率可达到98%,为无线卫星通信网络系统稳定运行提供保障     

A 10 GHz multiphase LC VCO with a ring capacitive coupling structure

A multiphase LC voltage-controlled oscillator(VCO) with a novel capacitive coupling CL ladder filter structure is proposed in this paper and this 10 GHz eight-phase VCO is applied in clock and data recovery(CDR) circuit for 40 Gb/s optical communications system.Compared with the traditional eight-phase oscillator,this capacitive coupling structure can decrease the number of inductors to half and only of four inductors.The VCO is designed and taped out in TSMC 65 nm CMOS technology.Measurement results show the phase noise is 105.95 dBc/Hz at 1MHz offset from a carrier frequency of 10 GHz.The chip area of VCO is 480 μm×700 μm and the VCO core power dissipation is 4.8 mW with the 1.0 V supply voltage.     

基于EDA技术的压控LC振荡器的设计与实现

根据压控LC振荡器的基本原理,提出了以EDA(Electronic Design Automation,电子设计自动化)软件MAX PLUSⅡ为基础压控LC振荡器设计的技术方案,详细阐述了系统的设计要求、设计技巧、设计方案,并进行了系统仿真和硬件测试。     

宽带高分辨率频率合成源设计

本文利用传统的锁相环结构,创造性地引入了一种电流控制振荡器YTO,代替了传统的电压控制振荡器VCO,成功地克服了VCO的宽带相位噪声不好的缺点,通过电压一电流转换技术,设计并实现了高分辨率、宽带的频率合成器。     

Ring Oscillator for 60 Meter Bandwidth

The 60-meter band range is tremendously useful in telecommunication, military and governmental applications. The I. T. U. (International Telecommunication Union) required isolationism to former radio frequency services because the various frequency bands are extremely overloaded. The allocation of new frequency bands are a lengthy procedure as well as time taking. As a result, the researchers use bidirectional, amateur radio frequency communication for 60-meter band, usually the frequency slot of 5250–5450 KHz, although the entire band is not essentially obtainable for all countries. For transmission and reception of these frequencies, a local oscillator is used in the mixer unit to generate the local signal for mixing the input and reference signals. For this function different type of oscillators are used. In this paper, a three-stage ring oscillator is designed with 1 V supply. Ring oscillators (RO) is the base to explore like to identifying, specify with modelling resources in the disparity in behaviour of the circuit in terms of industrialized design and layout parameters. This type of oscillators are free from noise as inductor is not used to the circuit as in LC oscillator, Heartly oscillator, Colpitt and tuned oscillators. The present approach of circuit designing, the scaling of CMOS (Complementary Metal Oxide Semiconductor) transistor will moderate, the procedure variability. In the forthcoming article, a ring oscillator with fixed capacitor (1 pF) and with variable capacitors (1 to 100 pF) is analysed. The frequency analysis with different capacitor is performed. The total delay of 3-stage oscillator is 4.82 ns with 5.2 MHz oscillation frequency. The overall Power dissipation of the circuit is 1.852 μW at 1 V supply. The simulation analysis is performed on 45 nm CMOS technology with both transistor width are 278 and 420 nm.     

Design of a 4.2–5.4 GHz differential LC VCO using 0.35 μm SiGe BiCMOS technology for IEEE 802.11a applications

In this paper, a 4.2–5.4 GHz, ?Gm LC voltage controlled oscillator (VCO) for IEEE 802.11a standard is presented. The circuit is designed with AMS 0.35 μm SiGe BiCMOS process that includes high‐speed SiGe Heterojunction Bipolar Transistors (HBTs). According to post‐layout simulation results, phase noise is ?110.7 dBc/Hz at 1 MHz offset from 5.4 GHz carrier frequency and ?113.4 dBc/Hz from 4.2 GHz carrier frequency. A linear, 1200 MHz tuning range is obtained from the simulations, utilizing accumulation‐mode varactors. Phase noise was also found to be relatively low because of taking advantage of differential tuning concept. Output power of the fundamental frequency changes between 4.8 dBm and 5.5 dBm depending on the tuning voltage. Based on the simulation results, the circuit draws 2 mA without buffers and 14.5 mA from 2.5 V supply including buffer circuits leading to a total power dissipation of 36.25 mW. The circuit layout occupies an area of 0.6 mm² on Si substrate, including DC and RF pads. © 2007 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2007.     

A design approach of higher oscillation VCO made of CS amplifier with varying active load

This article proposes a design approach of common source (CS) amplifier based Voltage Controlled Oscillator (VCO) to derive higher oscillation frequency. The working feature is such that, the active load of CS amplifier is varied to modulate the flow of current based on a bias circuit steered by an external controlled voltage (V_ctrl), which controls the delay of each stage and thereby regulates the oscillation frequency. The circuit is designed and analyzed on Cadence Virtuoso platform at a supply voltage of 1.2 V for 90 nm CMOS to read a device footprint of 0.105 mm², which offers a power burn and frequency of 2.092 mW and 9.21 GHz respectively with a phase noise and output noise of − 137.9 dBc/Hz and − 168.40 dB at 1 MHz offset frequency. To justify the reliability of the circuit we have conducted worst case analysis by considering effect of power delivery network (PDN) and corner variation along with 500 runs of Monte Carlo. The design is also introduced under 28 nm UMC to validate its scalability with technology trends.

     

Poststress RF‐drifts of dual‐band LC VCO in 0.18‐μm CMOS technology

This article studies the RF‐property of a dual‐band voltage‐controlled oscillator (VCO). The designed circuit consists of a dual‐resonance LC resonator and a Colpitts negative resistance cell. The dual‐resonance LC resonator comprises a series‐tuned LC resonator and a parallel resonant resonator. The proposed VCO has been implemented with the TSMC 0.18 μm 1P6M CMOS technology. The VCO can generate differential signals in the frequency range of 3.0–3.37 GHz and 6.95–7.40 GHz with core power consumption of 10.08 and 10.24 mW at the dc drain‐source bias V_DD of 1.4 V, respectively. The die area of the dual‐band VCO is 0.485 × 0.800 mm². The circuit was operated at V_DD = 3 V for 8 h and significant drift in RF parameters was found. © 2013 Wiley Periodicals, Inc. Int J RF and Microwave CAE 24:243–248, 2014.