Thermal Conductivity Characterization of Hafnium Diboride-Based Ultra-High-Temperature Ceramics

We evaluated the thermal conductivity of HfB₂-based ultra-high-temperature ceramics from laser flash diffusivity measurements in the 25°–600°C temperature range. Commercially available powders were used to prepare HfB₂ composites containing 20 vol% SiC, some including TaSi₂ (5 vol%) and Ir (0.5 or 2 vol%) additions. Samples were consolidated via conventional hot pressing or spark plasma sintering. Processing differences were shown to lead to differences in magnitude and temperature dependence of effective thermal conductivity. We compared results with measured values from heritage materials and analyzed trends using a network model of effective thermal conductivity, incorporating the effects of porosity, grain size, Kapitza resistance, and individual constituent thermal conductivities.     

Properties of a Pressureless-Sintered ZrB2–MoSi2 Ceramic Composite

A ZrB₂-based composite was fully densified by pressureless sintering at 1850°C with addition of 20 vol% MoSi₂. The microstructure was very fine, with mean dimensions of ZrB₂ grains around 2.5 μm. The four-point flexural strength in air was in excess of 500 MPa up to 1500°C.     

Hot-Pressed MoSi2-Particulate-Reinforced α-SiAlON Composites

MoSi₂-particulate-reinforced α-SiAlON ceramic composites containing 10, 20, 25, and 30 vol% were prepared by hot pressing at 1750°-1800°C. The α-SiAlON matrix was of the composition (Y_0.48Si_10.00A1_2.30O_1.17N_15.29). The hardness for the fully dense samples changed from HV10 = 22.5 to 15.3 GPa and the toughness from 3.2 to around 5.2 MPa^.m^1/2 when up to 30 vol% MoSi₂ was present. Two interesting microstructural features have been found. First, with an increasing amount of MoSi₂ a pronounced coalescence of MoSi₂ particles formed a "dual phase" material. The second effect was the growth of elongated α-SiAlON grains in the matrix with 10 vol% MoSi₂ added. The oxidation resistance has been determined to be unaffected by the addition of 2hd vol % MoSi₂ at 1250°C in oxygen gas of l atm pressure.     

Sintering Silicon Nitride Ceramics in Air

Silicon nitride (Si₃N₄) ceramics, prepared with Y₂O₃ and Al₂O₃ sintering additives, have been densified in air at temperatures of up to 1750°C using a conventional MoSi₂ element furnace. At the highest sintering temperatures, densities in excess of 98% of theoretical have been achieved for materials prepared with a combined sintering addition of 12 wt% Y₂O₃ and 3 wt% Al₂O₃. Densification is accompanied by a small weight gain (typically <1–2 wt%), because of limited passive oxidation of the sample. Complete α- to β-Si₃N₄ transformation can be achieved at temperatures above 1650°C, although a low volume fraction of Si₂N₂O is also observed to form below 1750°C. Partial crystallization of the residual grain-boundary glassy phase was also apparent, with β-Y₂Si₂O₇ being noted in the majority of samples. The microstructures of the sintered materials exhibited typical β-Si₃N₄ elongated grain morphologies, indicating potential for low-cost processing of in situ toughened Si₃N₄-based ceramics.     

High-Density Pressureless-Sintered HfC-Based Composites

Hafnium carbide (HfC)-(5, 10, and 20 vol%) MoSi₂ ceramics were pressureless sintered at 1950°C in an argon flux. The materials had nearly full density (96%–98%), with mean grain sizes in the range of 3–4 μm. Depending on the MoSi₂ amount (5–20 vol%), the mechanical properties were in the following ranges: hardness 16–15 GPa, Young's modulus 434–385 GPa, fracture toughness 3.6–3.4 MPa·m^1/2, and room-temperature 4-point flexural strength 465–383 MPa.     

Processing and Properties of TiB2 with MoSi2 Sinter-additive: A First Report

The densification of non-oxide ceramics like titanium boride (TiB₂) has always been a major challenge. The use of metallic binders to obtain a high density in liquid phase-sintered borides is investigated and reported. However, a non-metallic sintering additive needs to be used to obtain dense borides for high-temperature applications. This contribution, for the first time, reports the sintering, microstructure, and properties of TiB₂ materials densified using a MoSi₂ sinter-additive. The densification experiments were carried out using a hot-pressing and pressureless sintering route. The binderless densification of monolithic TiB₂ to 98% theoretical density with 2–5 μm grain size was achieved by hot pressing at 1800°C for 1 h in vacuum. The addition of 10–20 wt% MoSi₂ enables us to achieve 97%–99%ρ_th in the composites at 1700°C under similar hot-pressing conditions. The densification mechanism is dominated by liquid-phase sintering in the presence of TiSi₂. In the pressureless sintering route, a maximum of 90%ρ_th is achieved after sintering at 1900°C for 2 h in an (Ar+H₂) atmosphere. The hot-pressed TiB₂–10 wt% MoSi₂ composites exhibit high Vickers hardness (∼26–27 GPa) and modest indentation toughness (∼4–5 MPa·m^1/2).     

Thermal and Electric Properties in Hot-Pressed ZrB2–MoSi2–SiC Composites

The thermal and electrical properties of MoSi₂ and/or SiC-containing ZrB₂-based composites and the effects of MoSi₂ and SiC contents were examined in hot-pressed ZrB₂–MoSi₂–SiC composites. The thermal conductivity and electrical conductivity of the ZrB₂–MoSi₂–SiC composites were measured at room temperature by a nanoflash technique and a current–voltage method, respectively. The results indicate that the thermal and electrical conductivities of ZrB₂–MoSi₂–SiC composites are dependent on the amount of MoSi₂ and SiC. The thermal conductivities observed for all of the compositions were more than 75 W·(m·K)⁻¹. A maximum conductivity of 97.55 W·(m·K)⁻¹ was measured for the 20 vol% MoSi₂-30 vol% SiC-containing ZrB₂ composite. On the other hand, the electrical conductivities observed for all of the compositions were in the range from 4.07 × 10–8.11 × 10 Ω⁻¹·cm⁻¹.     

Sintering Mechanisms of Zirconium and Hafnium Carbides Doped with MoSi2

The microstructure of two pressureless-sintered ultra-high-temperature ceramics, namely ZrC+20 vol% MoSi₂ and HfC+20 vol% MoSi₂, was characterized by scanning and transmission electron microscopy. With regard to the ZrC–MoSi₂ system, Zr _x Si _y compounds and SiC were detected. In the HfC–MoSi₂ system, a mixed phase was detected at the triple points and identified as (Mo,Hf)₅Si₃. For both the systems investigated, the high wettability of the silicide-based phases on the matrix grains suggests that sintering is assisted by a liquid phase. This contribution reports for the first time on the sintering mechanisms of early transition metal carbides doped with MoSi₂ as a sinter additive, on the basis of the microstructural evolution observed upon sintering and in the light of phase diagrams and thermodynamical calculations.     

Synthesis of Monodispersed Fine Hafnium Diboride Powders Using Carbo/Borothermal Reduction of Hafnium Dioxide

Fine hafnium diboride (HfB₂) powders have been prepared by modified carbothermal/borothermal reduction of hafnium dioxide (HfO₂) at relatively low temperatures (1500°–1600°C) for 1–2 h. The XRD patterns could be indexed as hexagonal HfB₂ and no evidence of HfC, HfO₂, or other impurities was observed. Glow discharge mass spectrometer analysis indicates that the synthesized HfB₂ powders had high purity. The synthesized HfB₂ powders had small average crystallite size (around 1 μm) and low oxygen content (<0.30 wt%). Scanning electron microscopy observation of the as-prepared powders demonstrated quasi-column morphology and laser particle size analysis showed monodispersity (polydispersity 0.005).     

Silicon Nitride/Molybdenum Disilicide Composite with Superior Long-Term Oxidation Resistance at 1500°C

The long-term high-temperature cyclic oxidation (100 cycles, 10⁴ h, 1500°C) of a Si₃N₄ material and a Si₃N₄/MoSi₂ composite, both fabricated with Y₂O₃ as a sintering additive, was studied. Both materials exhibited similar oxidation rates because of surface SiO₂ formation described by an almost parabolic law and a total weight gain of 3–4 mg/cm² after 10⁴ h. As a consequence of oxidation processes in the bulk, microstructural damage was found in the Si₃N₄ material. These effects were not observed in the composite. The remarkable microstructural stability observed offers the high potential of Si₃N₄/MoSi₂ composites for long-term structural applications at elevated temperatures up to 1500°C.     

Effect of the Machining Method on the Catalycity and Emissivity of ZrB2 and ZrB2–HfB2-Based Ceramics

The emissivity and the catalytic efficiency related to atomic oxygen recombination were investigated experimentally in the range 1000–2000 K for ZrB₂ and ZrB₂–HfB₂-based ceramics. In order to evaluate the effect of the machining method, two series of samples, one prepared by electrical discharge machining and the other machined by diamond-loaded tools, were tested. High emissivity (about 0.7 at 1700 K) and low recombination coefficients (on average 0.08 at 1800 K) were found for all the materials. The experimental data showed an effect of the surface machining on the catalytic behavior only on the ZrB₂-based composite; conversely, small variations were found in the recombination coefficients of ZrB₂–HfB₂-based samples for the different machining processes. The surface finish affected the emissivity at lower temperatures in both compositions, with the effect becoming negligible at temperatures above 1500 K.     

Resistance to Thermal Shock and to Oxidation of Metal Diborides–SiC Ceramics for Aerospace Application

Two SiC-containing metal diborides materials, classified in the ultra-high-temperature ceramics (UHTCs) group, were fabricated by hot-pressing. SiC, sinterability apart, promoted resistance to oxidation of the diboride matrices. Both the compositions, oxidized in air at 1450°C for 1200 min, had mass gains lower than 5 mg/cm². Slight deviations from parabolic oxidation kinetics were seen. The resistance to thermal shock (TSR) was studied through the method of the retained flexure strength after water quenching (20°C of bath temperature). Experimental data showed that the (ZrB₂+HfB₂)–SiC and the ZrB₂–SiC materials retained more than 70% of their initial mean flexure strength for thermal quenchs not exceeding 475° and 385°C, respectively. Certain key TSR properties (i.e., fracture strength and toughness, elastic modulus, and thermal expansion coefficient) are very similar for the two compositions. The observed superior critical thermal shock of the (ZrB₂+HfB₂)–SiC composite was explained in terms of more favorable heat transfer parameters conditions that induce less severe thermal gradients across the specimens of small dimensions (i.e., bars 25 mm × 2.5 mm × 2 mm) during the quench down in water. The experimental TSRs are expected to approach the calculated R values (196° and 218°C for ZrB₂+HfB₂–SiC and ZrB₂–SiC, respectively) as the specimen size increases.     

Refractory Diborides of Zirconium and Hafnium

This paper reviews the crystal chemistry, synthesis, densification, microstructure, mechanical properties, and oxidation behavior of zirconium diboride (ZrB₂) and hafnium diboride (HfB₂) ceramics. The refractory diborides exhibit partial or complete solid solution with other transition metal diborides, which allows compositional tailoring of properties such as thermal expansion coefficient and hardness. Carbothermal reduction is the typical synthesis route, but reactive processes, solution methods, and pre-ceramic polymers can also be used. Typically, diborides are densified by hot pressing, but recently solid state and liquid phase sintering routes have been developed. Fine-grained ZrB₂ and HfB₂ have strengths of a few hundred MPa, which can increase to over 1 GPa with the addition of SiC. Pure diborides exhibit parabolic oxidation kinetics at temperatures below 1100°C, but B₂O₃ volatility leads to rapid, linear oxidation kinetics above that temperature. The addition of silica scale formers such as SiC or MoSi₂ improves the oxidation behavior above 1100°C. Based on their unique combination of properties, ZrB₂ and HfB₂ ceramics are candidates for use in the extreme environments associated with hypersonic flight, atmospheric re-entry, and rocket propulsion.     

Sintering of a Crystallizable CaO-B2O3-SiO2 Glass with Silver

Effects of Ag addition on sintering of a crystallizable CaO-B₂O₃-SiO₂ glass have been investigated at 700°–900°C in different atmospheres. With Ag content increasing in the range of 1–10 vol%, the softening point, the densification, the onset crystallization temperature, and the total amount of crystalline phase formed of the crystallizable glass are reduced when fired in air. A bloating phenomenon is observed when the crystallizable CaO-B₂O₃-SiO₂ glass doped with 1–10 vol% Ag is fired at 700°–900°C for 1–4 h. Fired in N₂ or N₂+ 1% H₂, however, the above phenomena disappear completely. It is thus believed that the diffusion of Ag into the crystallizable glass, which is caused by the oxidation of Ag in air, is the root cause for the above results observed.     

Fabrication and Microstructures of MoSi2 Reinforced–Si3N4 Matrix Composites

Details of the fabrication and microstructures of hot-pressed MoSi₂ reinforced–Si₃N₄ matrix composites were investigated as a function of MoSi₂ phase size and volume fraction, and amount of MgO densification aid. No reactions were observed between MoSi₂ and Si₃N₄ at the fabrication temperature of 1750°C. Composite microstructures varied from particle–matrix to cermet morphologies with increasing MoSi₂ phase content. The MgO densification aid was present only in the Si₃N₄ phase. An amorphous glassy phase was observed at the MoSi₂–Si₃N₄ phase boundaries, the extent of which decreased with decreased MgO level. No general microcracking was observed in the MoSi₂–Si₃N₄ composites, despite the presence of a substantial thermal expansion mismatch between the MoSi₂ and Si₃N₄ phases. The critical MoSi₂ particle diameter for microcracking was calculated to be 3 μm. MoSi₂ particles as large as 20 μm resulted in no composite microcracking; this indicated that significant stress relief occurred in these composites, probably because of plastic deformation of the MoSi₂ phase.     

Properties of Silicon Nitride–Molybdenum Disilicide Particulate Ceramic Composites

The physical and mechanical properties of hot-pressed Si₃N₄–MoSi₂ particulate composites containing 15 and 30 vol% MoSi₂ were studied. The average room-temperature four-point bend strength, fracture toughness, and electrical resistivity are 522 MPa, 3.6 MPa·√m, and 6.3 × 10⁵Χ·cm for the 15 vol% MoSi₂ composite, and 487 MPa, 5.3 MPa·√m, and 0.31 Ω·cm for the 30 vol% MoSi₂ composite. The mechanical properties of the composites are very close to those of hot-pressed Si₃N₄ ceramics. The high electrical conductivity of the 30 vol% MoSi₂ composite was attributed to the percolation effect of MoSi₂ particles. Parabolic oxidation behaviors were observed for the 30 vol% MoSi₂ composite during the 1200°C long-term oxidation experiments.     

Densification and Cell Performance of Gadolinium-Doped Ceria (GDC) Electrolyte/NiO–GDC Anode Laminates

A thin film (60 μm thick) of a gadolinium-doped ceria (GDC) electrolyte was prepared by the doctor blade method. This film was laminated with freeze-dried 42 vol% NiO–58 vol% GDC mixed powder and pressed uniaxially or isostatically under a pressure of 294 MPa. This laminate was cosintered at 1100 °–1500 °C in air for 4–12 h. The laminate warped because of the difference in the shrinkage of the electrolyte and electrode during the sintering. A higher shrinkage was measured for the electrode at 1100 °–1200 °C and for the electrolyte at 1300 °–1500 °C. The increase of the thickness of anode was effective in decreasing the warp and in increasing the density of the laminated composite. The maximum electric power density with a SrRuO₃ cathode using 3 vol% H₂O-containing H₂ fuel was 100 mW/cm² at 600 °C and 380 mW/cm² at 800 °C, respectively, for the anode-supported GDC electrolyte with 30 μm thickness.     

Reaction-Bonding Preparation of Si3N4/MoSi2 and Si3N4/WSi2 Composites from Elemental Powders

Si₃N₄/MoSi₂ and Si₃N₄/WSi₂ composites were prepared by reaction-bonding processes using as starting materials powder mixtures of Si-Mo and Si-W, respectively. A presintering step in an At-base atmosphere was used before nitriding for the formation of MoSi₂ and WSi₂; the nitridation in a N₂-base atmosphere was followed after presintering with the total stepwise cycle of 1350°C × 20 h +1400°C × 20 h +1450°C × 2 h. The final phases obtained in the two different composites were Si₃N₄ and MoSi₂ or WSi₂; no free elemental Si and Mo or W were detected by X-ray diffraction.     

High-Temperature Chemistry and Oxidation of ZrB2 Ceramics Containing SiC, Si3N4, Ta5Si3, and TaSi2

The effect of Si₃N₄, Ta₅Si₃, and TaSi₂ additions on the oxidation behavior of ZrB₂ was characterized at 1200°–1500°C and compared with both ZrB₂ and ZrB₂/SiC. Significantly improved oxidation resistance of all Si-containing compositions relative to ZrB₂ was a result of the formation of a protective layer of borosilicate glass during exposure to the oxidizing environment. Oxidation resistance of the Si₃N₄-modified ceramics increased with increasing Si₃N₄ content and was further improved by the addition of Cr and Ta diborides. Chromium and tantalum oxides induced phase separation in the borosilicate glass, which lead to an increase in liquidus temperature and viscosity and to a decrease in oxygen diffusivity and of boria evaporation from the glass. All tantalum silicide-containing compositions demonstrated phase separation in the borosilicate glass and higher oxidation resistance than pure ZrB₂, with the effect increasing with temperature. The most oxidation-resistant ceramics contained 15 vol% Ta₅Si₃, 30 vol% TaSi₂, 35 vol% Si₃N₄, or 20 vol% Si₃N₄ with 10 mol% CrB₂. These materials exceeded the oxidation resistance of the ZrB₂/SiC ceramics below 1300°–1400°C. However, the ZrB₂/SiC ceramics showed slightly superior oxidation resistance at 1500°C.     

Spark Plasma Sintered Silicon Nitride Ceramics with High Thermal Conductivity Using MgSiN2 as Additives

Silicon nitride ceramics were prepared by spark plasma sintering (SPS) at temperatures of 1450°–1600°C for 3–12 min, using α-Si₃N₄ powders as raw materials and MgSiN₂ as sintering additives. Almost full density of the sample was achieved after sintering at 1450°C for 6 min, while there was about 80 wt%α-Si₃N₄ phase left in the sintered material. α-Si₃N₄ was completely transformed to β-Si₃N₄ after sintering at 1500°C for 12 min. The thermal conductivity of sintered materials increased with increasing sintering temperature or holding time. Thermal conductivity of 100 W·(m·K)⁻¹ was achieved after sintering at 1600°C for 12 min. The results imply that SPS is an effective and fast method to fabricate β-Si₃N₄ ceramics with high thermal conductivity when appropriate additives are used.