Miniaturised, low impedance ratrace fabricated by microstrip line employing PPGM on MMIC

Using a novel microstrip line employing periodically perforated ground metal (PPGM), a highly miniaturised ratrace with a low port impedance of 10.6 /spl Omega/ was developed for K/Ka band monolithic microwave integrated circuit (MMIC) applications. Its size was 0.375 mm/sup 2/ on GaAs substrate, which was 9.3% of the one fabricated by conventional microstrip line. The ratrace exhibited good RF performance from 20 to 30 GHz.     

Basic RF Characteristics of the Microstrip Line Employing Periodically Perforated Ground Metal and Its Application to Highly Miniaturized On-Chip Passive Components on GaAs MMIC

In this study, highly miniaturized on-chip impedance transformers employing periodically perforated ground metal (PPGM) were developed for application to broadband low-impedance matching. In order to realize a broadband operation by using an equal ripple transfer characteristic over a passband, a three-section transformer was designed by mapping its reflection coefficient to the Chebyshev function. The three-section transformer showed a good RF performance over a broadband (1.5–13 GHz) including ultra-wideband. The size of the three-section transformer was 0.129$hboxmm^2$, which is 2.3% of the size of the transformer fabricated by a conventional microstrip line. Using the PPGM structure, a highly miniaturized on-chip Wilkinson power divider with a low port impedance of 13$Omega $was also developed, and its size is 0.11$hboxmm^2$, which is 6% of the size of the one fabricated by the conventional microstrip line. In addition, in this study, the PPGM structure was theoretically characterized using a conventional capacitive loaded periodic structure. Using the theoretical analysis, basic characteristics of the transmission line with PPGM were also investigated in order to evaluate its suitability for application to a development of miniaturized on-chip passive components. According to the results, it was found that the PPGM structure is a promising candidate for application to a development of miniaturized on-chip components on monolithic microwave integrated circuits.     

级联型单级分布式宽带单片功率放大器

报道了一个采用级联型单级分布式结构的宽带单片功率放大器的设计方法和研制结果。文中通过拓扑比较和人工传输线理论研究,分析出该功放设计的难点,并基于仿真实验,给出解决方案。最终研制的两级单片功放在6～18GHz频率范围内线性增益13.5dB,平坦度±1dB,输入输出驻波比均小于2。全频带上,饱和输出功率为300～450mW,功率附加效率大于15%。该宽带单片功率放大器在100mm GaAs MMIC工艺线上采用0.25μm功率pHEMT标准工艺制作,芯片尺寸为2.7mm×1.25mm×0.08mm。     

Hybrid ring coupler for W-band MMIC applications using MEMS technology

The hybrid ring coupler was designed and fabricated on a GaAs substrate using surface micromachining techniques, which adopted dielectric-supported air-gapped microstrip line (DAML) structure. The fabrication process of DAML is compatible with the standard monolithic microwave integrated circuit (MMIC) techniques, and the hybrid ring coupler can be simply integrated into a plane-structural MMIC. The fabricated hybrid ring coupler shows wideband characteristics of the coupling loss of 3.57 /spl plusmn/ 0.22dB and the transmission loss of 3.80 /spl plusmn/ 0.08dB across the measured frequency range of 85 to 105GHz. The isolation characteristics and output phase differences are -34dB and 180/spl plusmn/1/spl deg/, at 94GHz, respectively.     

Experimental Study on Isolation Characteristics Between Adjacent Microstrip Lines Employing Periodically Perforated Ground Metal for Application to Highly Integrated GaAs MMICs

Using a periodically perforated ground metal (PPGM) on GaAs monolithic microwave integrated circuit (MMIC), a microstrip line structure with a high isolation characteristic between lines was developed. The high isolation characteristic was originated from a resonance between adjacent microstrip lines employing PPGM. According to experimental results, a much better isolation characteristic was observed from the adjacent microstrip lines employing PPGM compared with conventional microstrip lines, and the frequency range for high isolation was easily controlled by changing the PPGM structure. Above results indicate that microstrip lines employing PPGM are very useful for application to compact signal/bias lines of highly integrated MMIC requiring a high isolation characteristics between lines.     

K-band monolithic InGaP-InGaAs DCFET amplifier using BCB coplanar waveguide technology

A K-band (20 GHz) monolithic amplifier was developed and fabricated by adopting a low-/spl kappa/ benzocyclobutene (BCB) coplanar waveguide (CPW) line and InGaP-InGaAs doped-channel HFETs (DCFETs). This monolithic microwave integrated circuit (MMIC) utilizes a high impedance BCB CPW microstrip line (Z/sub 0/=70 /spl Omega/) for the biasing circuits, and a Z/sub 0/=50 /spl Omega/ line for the RF signal transmission. The low dielectric constant characteristic of the BCB interlayer is beneficial for a common-ground bridge process, which reduces the parasitics. The calculated loss tan/spl delta/ is 0.036 for the BCB at 20 GHz. The one-stage MMIC amplifier achieves an S/sub 21/ of 5 dB at 20 GHz, which is the first demonstration of the K-band InGaP-InGaAs DCFET monolithic circuit.     

具有陷波特性的宽带微带线-槽线巴伦的设计

提出了一种具有陷波特性的宽带微带线-槽线巴伦。通过采用阶梯型阻抗变换器,拓宽了巴伦的工作带宽。同时,在微带线的开路枝节上增加了一个1/4波长的开路枝节,使得巴伦可以在所需的频段内实现陷波特性。仿真结果表明,巴伦除在1.25~1.46 GHz频带内实现陷波外,在0.38~2 GHz频带内反射系数均＜-10 dB,插入损耗均优于-1.8dB。     

A broadband GaAs MMIC frequency doubler on left-handed nonlinear transmission lines

A broadband frequency doubler using left-handed nonlinear transmission lines(LH NLTLs) based on MMIC technology is reported for the first time.The second harmonic generation on LH NLTLs was analyzed theoretically. A four-section LH NLTL which has a layout of 5.4×0.8 mm~2 was fabricated on GaAs semi-insulating substrate. With 20-dBm input power,the doubler obtained 6.33 dBm peak output power at 26.8 GHz with 24-43 GHz—6 dBm bandwidth.The experimental results were quite consistent with the simulated results.The compactness and the broad band characteristics of the circuit make it well suit for GaAs RF/MMIC application.     

Broadband InGaAs PIN Traveling-Wave Switch Using a BCB-Based Thin-Film Microstrip Line Structure

This letter describes the design and fabrication of a broadband InGaAs PIN traveling wave switch. A new thin-film microstrip line structure integrated with InGaAs PIN diodes has been used to enhance the switch performance at higher frequencies. The developed InGaAs PIN switch has an insertion loss of less than 3.2 dB and an isolation of greater than 40 dB in a broadband frequency range from 25 to 95 GHz. The BCB-based multi-layer technology effectively reduces the chip size of the fabricated SPDT MMIC switch to 1.05 times 0.58 mm². To our knowledge, this is the first InGaAs PIN traveling-wave switch demonstrated up to 95 GHz.     

Ku频段80W连续波空间功率合成放大器设计

提出一种基于WR-140波导功分/合成器与波导-微带双探针过渡相结合的高效空间功率合成方案,并采用GaAsMMIC为推动放大级,MFET为末级功率放大器的两级放大结构,在15.7～16.2GHz频率范围内合成了饱和最大44W连续波功率。接着,采用一种具有渐变匹配结构的宽带波导功分/合成器将两个上述功放模块合成,在15.7～16.2GHz频率范围内实现了饱和最大82W连续波功率输出,合成效率最高达85%,附加效率高于14.5%,在Ku频段实现了高效合成与大功率连续波输出。     

一种新型宽带印制天线

本文给出了一种新型双偶极子型宽带印制天线,并设计出相应的类平行宽边耦合双线双面馈电结构。采用矩量法求解积分方程进行理论分析,由此设计出一种新型宽带印制天线,并进行实验测试。理论分析表明：在相同的基片上,双偶极子型印制天线比普通微带振子天线的带宽宽得多;同时实测结果表明：在0.8mm的介质基片上,工作于中心频率2GHz的该新型天线带宽可达23％（VSWR＜2.0）,增益达4.3dBi。该宽带天线为平面印制结构,易于与电路集成,亦可做为天线阵元,成本低,性能好。     

Fully Integrated Broadband CPW Left-Handed Metamaterials Based on GaAs Technology for RF/MMIC Applications

A fully integrated broadband coplanar waveguide left-handed metamaterial medium using GaAs technology for radio frequency/monolithic microwave integrated circuit (RF/MMIC) applications is reported and validated by the full wave simulation and measured results. The unit cell of the fabricated structures has a size of 0.09 mm². The left handedness of the integrated left-handed structure extends from 2.3 to 17.5 GHz. The compactness and broad left-handed operating bandwidth make the presented left-handed metamaterial be well incorporated with RF/MMIC applications.     

Broadband microstrip patch antennas for MMICs

A broadband microstrip patch antenna well suited for monolithic microwave integrated circuits (MMICs) is presented. The antenna exhibits a measured bandwidth of 35%, low surface wave loss, a high front-to-back ratio, and is fabricated directly on the MMIC substrate material. The predicted and measured input impedances are given along with the measured radiation performance     

Investigation into the performance of proximity coupled stacked patches

We investigate the parameters that control the impedance and radiation performance of proximity coupled stacked microstrip patch radiators. In particular we explore the relationship required between the dielectric layers to achieve broadband behavior and also how the dimensions of the stacked radiators and the relative location of the feed can influence the impedance response. Bandwidths in excess of 20% can be achieved with careful layer design. We also investigate the dielectric layer configurations required to achieve broadband impedance responses when higher dielectric constant feed material is used. This latter study is of particular importance when designing MMIC compatible printed antennas.     

2-4 GHz monolithic lateral p-i-n photodetector and MESFET amplifieron GaAs-on-Si

The design, fabrication, and evaluation of broadband lateral p-i-n photodetectors monolithically integrated with multistage MESFET amplifiers on GaAs-on-Si are described. Unique features of this approach are that (a) the lateral p-i-n structure is compatible with monolithic microwave integrated circuit (MMIC) technology and (b) the p-i-n detector is fabricated directly on the GaAs buffer layer without p⁺ and n⁺ implants, thus resulting in a simplified fabrication process. The operation of the circuit is compared to that of a similar circuit fabricated on a GaAs substrate. A quantum efficiency exceeding 60% has been measured for the p-i-n detectors. The 2- to 4-GHz frequency responses of one- and two-stage p-i-n/FET preamplifiers are presented. The response varies ±3 dB over the frequency band     

Development of MMIC-based modules for multichannel RF/opticalsubcarrier multiplexed communications applications

We present a C-band monolithic microwave integrated circuit (MMIC) transmitter module development for multichannel RF/optical subcarrier multiplexed (OSCM) communication applications. The C-band MMIC transmitter module consists of one fully monolithic four-channel OSCM transmitter IC and four coupled-line filters. This MMIC is designed and implemented in a commercial GaAs MESFET process and coupled line bandpass filters are fabricated on the module board. We present the design and performance of the first fully monolithic IC transmitter module for OSCM packet switched applications     

A 9.1–10.7 GHz 10-W, 40-dB Gain Four-Stage PHEMT MMIC Power Amplifier

This letter presents a compact X-band high gain and high power four-stage AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) monolithic microwave integrated circuit (MMIC) high power amplifier (PA). This amplifier is designed to fully match a 50-Omega input and output impedance. Based on 0.35-mum gate-length power PHEMT technology, this PA MMIC is fabricated on a 3-mil thick wafer. While operating under 8 V and 2700-mA dc bias condition, the characteristics of 40-dB small-signal gain, a 10-W continuous-wave saturation output power, and 33% power added efficiency at 9.7GHz can be achieved     

基于耦合三线结构的宽带功分器研究*

由于传统的威尔金森功分器需要通过多级传输线的级联来拓展其工作带宽,增加了电路设计的复杂度。因此本文提出了一种基于耦合三线的宽带功分器结构。通过在四分之一波长传输线的两端分别引入一节耦合三线,使功分器实现了宽带特性。采用三线耦合器与阻抗变换理论,对影响功分器工作带宽、输入输出端口匹配度和隔离度参数进行了理论分析,并设计制造了基于此结构的宽带功分器。测试结果表明该功分器具有很好的端口匹配、传输损耗和端口隔离特性。     

振荡型有源集成天线

研制中心频率为18 GHz的振荡型有源集成天线,包括微带天线设计、单片压控振荡器(MMIC VCO)的设计及微带天线与单片压控振荡器二者的集成。微带天线的芯片面积为4.5 mm×3.5 mm,增益为3.67 dB,中心频率为18.032 GHz,最小输入驻波系数为1.098;单片压控振荡器芯片面积1.1 mm×1.0 mm,调谐范围为15.978～18.247 GHz,输出功率大于6 dBm。振荡型有源集成天线的方向图测试结果与微带天线的特性符合,该振荡型有源集成天线能够正常工作。     

Microstrip antennas on synthesized low dielectric-constantsubstrates

Micromachining techniques using closely spaced holes have been used underneath a microstrip antenna on a high dielectric-constant substrate (ϵ_r=10.8) to synthesize a localized low dielectric-constant environment (ϵ_r=2.3). The measured radiation efficiency of a microstrip antenna on a micromachined 635-μm thick ϵ_r=10.8 Duroid 6010 substrate increased from 48±3% to 73±3% at 12.8-13.0 GHz (including 3.3-cm feed line losses). We believe that this technique can be applied to millimeter-wave antennas (microstrip, dipoles, slots, etc.) on silicon and GaAs substrates to result in relatively wideband (3-6%) monolithic microwave integrated circuits (MMIC) active antenna modules for phased-arrays and collision-avoidance systems