一个通用LCD驱动电路设计

实现了一款适合单色小屏幕应用的通用LCD显示驱动芯片的设计.该芯片采用0.5μm高压CMOS工艺.采用双电源供电,数字逻辑电路电压为5 V,LCD驱动电压典型为8 V,最高12 V.采用RC振荡电路,内置显示对比度调整电路.多种驱动方案可选,最多可以支持730段码.4个通用输出端,可用于背光控制等电路.通过串行总线控制,提供外部管脚INH,可异步关断所有输出.可控制其工作在省电模式.无需外接译码电路,通用性强.     

基于MCU控制的高压开关电源

针对压电陶瓷驱动电源的应用设计了一种基于单片机(MCU)控制的高压开关电源,实现了低压(9～18 V)输入下的高压(150 V)输出。电路主回路采用准谐振反激变换拓扑结构,MCU芯片控制脉宽调制(PWM)电源管理芯片完成变换器升压,并驱动H桥逆变电路输出频率可调的方波电压。数字控制的高压开关电源工作波形稳定,尖峰噪声小,输出电压精度高。实验结果验证了高压开关电源的性能。     

高压、高效率白光LED驱动电路的研究与设计

设计了一种高效率的高输入电压,恒定电流输出的白光LED驱动芯片.采用高压工艺,以脉宽调制(PWM)峰值电流的控制方式,实现了宽范围电压输入、恒定电流输出的LED驱动芯片的设计.内部集成了带隙电压基准源,产生0.25V的参考电压.芯片设计采用了高压横向扩散金属氧化物半导体场效应管(LDDMOS),设计了电压预调整电路,实现了输入电压范围在85V-400V间变化,输出电流在1毫安到1安培间设定.芯片仿真结果显示电能转换效率最高可达90%以上.     

高可靠、高效率的白光LED高压驱动芯片

根据白光LED(Light Emitting Diode)的特性及其对驱动电路的要求,提出了一种高可靠、高效率的LED高压驱动芯片,具有线性调光和数字调光两种调光功能。芯片采用简化的脉冲宽度调制(PWM,Pulse Width Modulation)峰值电流控制模式控制通过LED的电流,系统稳定性好,抗干扰能力强。振荡器中新型抖频电路模块的加入,提高了系统的电磁干扰(EMI,Electro Magnetic Interference)性能,使系统可靠性进一步增强。驱动芯片的输入电压范围为8.5 V~40V,输出的驱动电压达7.5V,可有效降低NMOS功率开关管的导通损耗。电路设计采用低静态电流、低反馈电压等低功耗设计技术,提高了系统的电能转换效率。芯片采用CSMC公司1μm 40V高压CMOS工艺模型设计,并完成流片。测试结果验证了抖频电路的作用,系统的最高转换效率达到了95.3%。     

高频PWM DC/DC转换器的设计

设计了一种基于0.6μm CMOS工艺的高频PWM升压型DC/DC转换芯片.采用恒定频率、电流模式的控制结构以提供稳定的电压.本芯片在XFAB公司流片成功,测试结果表明,芯片的开关频率高达为1.2MHz,在输入电压分别为3.3V、5V的情况下能稳定地分别驱动4个、6个白光LED,输出电压分别为12.8V、18.6V.     

中小屏幕TFT-LCD驱动芯片的输出缓冲电路

在分析中小屏幕TFT-LCD驱动芯片的负荷特性的基础上,提出了一种新型的驱动电压输出缓冲电路结构.通过负反馈动态控制输出级的工作状态,具有交替提供拉电流和灌电流的驱动能力,可有效抑制输出电压的波动.与传统的两级运算放大器电路相比,该电路结构简单,稳定性能好,降低了静态功耗并节省了芯片面积.采用0.25μm CMOS工艺设计并实现了两种不同输出电压的缓冲电路.HSPICE仿真结果表明,输出电压缓冲电路的静态电流为3μA,Offset电压小于±2mV.同时,当TFT-LCD的驱动电压在-8～ 16V之间切换时,输出电压的波动范围小于±0.4V,输出电压的恢复时间小于7μs.经对工程样片的测试知,其性能完全满足中小屏幕TFT-LCD驱动控制芯片的要求.     

高频多相数字DC-DC控制芯片的设计

介绍应用于低电压大电流DC-DC的高频多相数字控制芯片的设计。该芯片采用电压模式控制、数字比例-积分-微分(PID)控制算法,由可编程电压基准源、窗口ADC、数字PID电路以及数字脉宽调制(DPWM)电路组成。该芯片提供1MHz开关频率、四相PWM信号输出、5bit电压识别(VID)码控制系统的输出电压,实现从1.1V到1.85V可调。芯片在0.35μm工艺下流片。实验结果证实了芯片的性能与设计方法的正确性。     

一种用于液晶显示源驱动的放大器设计

设计出一种用于TET液晶显示的源驱动放大器.放大器的输入级采用互补差分对形式,输出级则采用甲乙类CMOS结构,实现了输入输出的Rail-to-Rail.增加了平衡电路,抑制了非线性.通过设置合适的电压偏置和小的偏置电流在5V工作电压下实现了低功耗.在-40～85℃范围内,基于和舰0.25μm高压CMOS工艺,采用HSPICE仿真验证,在30pF负载电容条件下,放大器的静态功耗仅有19μW,输出电压范围为0V～5V,开环电压增益达到132dB,总谐波失真仅为0.009%.能很好满足液晶显示源驱动电路的要求,并成功应用于LCD驱动芯片中.     

中小屏幕TFT-LCD驱动芯片的输出缓冲电路

在分析中小屏幕TFT-LCD驱动芯片的负荷特性的基础上,提出了一种新型的驱动电压输出缓冲电路结构.通过负反馈动态控制输出级的工作状态,具有交替提供拉电流和灌电流的驱动能力,可有效抑制输出电压的波动.与传统的两级运算放大器电路相比,该电路结构简单,稳定性能好,降低了静态功耗并节省了芯片面积.采用0.25μm CMOS工艺设计并实现了两种不同输出电压的缓冲电路.HSPICE仿真结果表明,输出电压缓冲电路的静态电流为3μA,Offset电压小于±2mV.同时,当TFT-LCD的驱动电压在-8～+16V之间切换时,输出电压的波动范围小于±0.4V,输出电压的恢复时间小于7μs.经对工程样片的测试知,其性能完全满足中小屏幕TFT-LCD驱动控制芯片的要求.     

一种用于LCD源驱动芯片的数模转换电路设计

在LCD源驱动芯片设计中,为了将输入的数字信号转换成对应的灰阶电压,送到输出缓冲进行输出,需要一个数模转换电路.利用P.E.Allen在书中提到的电阻分压式D/A转换器结构,设计一种用于LCD源驱动芯片的6位数模转换电路.文中采用TSMC 0.25 μm CMOS工艺参数,用Cadence的spectre仿真器对电路进行仿真.电源电压为8 V,仿真的结果与理论上的数模转换电路传输特性基本吻合.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.