Lasing in the vertical direction in InGaN/GaN/AlGaN structures with InGaN quantum dots

InGaN/GaN structures with dense arrays of InGaN nanodomains were grown by metallorganic chemical vapor deposition. Lasing in vertical direction occurs at low temperatures, indicating ultrahigh gains (～ 10⁵ cm^?1) in the active region. Fabrication of an effective AlGaN/GaN distributed Bragg reflector with reflectivity exceeding 90% enables vertical lasing at room temperature in structures with a bottom distributed Bragg reflector, despite the absence of a well-reflecting upper mirror. The lasing wavelength is 401 nm, and the threshold excitation density is 400 kW/cm².     

（论坛）采用ALD方法制备TiO2/Al2O3布拉格反射镜并配合金属反射镜来增强背镀结构的反射效率

文中首次采用原子层沉积法制备TiO2/Al2O3布拉格反射镜并配合金属反射镜来制备了高反射率的背反射镜。制备的多层布拉格反射镜加Al镜和多层布拉格反射镜加Ag镜有很好的平整度和厚度的精确性,并且反射率高于96%。此外,TiO2/Al2O3布拉格反射镜和Al与蓝宝石衬底都有良好的粘合性,这样可以节省制备步骤并且可以得到高质量的背反射镜。利用原子层沉积技术和TiO2/Al2O3布拉格反射镜,我们得到了高反射率,角度依赖性小,更加稳定以及均一性更好的背反射镜,可以满足高亮度LED的需求。     

Voltage-controlled distributed Bragg reflectors for modulation andintegrated power monitoring of vertical-cavity surface-emitting lasers

The authors demonstrate a voltage-controlled distributed Bragg reflector with a very high off-state reflectivity and low-voltage operation suitable for use within a vertical-cavity surface-emitting laser. The unbiased peak reflectivity approaches 99.8% at 980 nm, which may be modulated through the quantum-confined Stark effect by 1%. The mirror allows measurement of photocurrent to monitor VCSEL output power     

High reflectivity Te-doped GaAsSb/AlAsSb Bragg mirror for 1.5 μmsurface emitting lasers

A high reflectivity GaAsSb/AlAsSb Bragg mirror lattice matched to InP is reported. Operation at 1.5 μm is obtained owing to a large Burstein-Moss shift of GaAsSb absorption caused by a strong N-doping up to 10¹⁹ cm^-2. Peak reflectivity up to 94% has been measured with only 11.5 periods     

Analytic expressions for the reflection delay, penetration depth,and absorptance of quarter-wave dielectric mirrors

The authors analyze the operation of high-reflectivity quarter-wave (QW) dielectric mirrors at the band-stop center (Bragg) frequency, relevant for the design of small-cavity optoelectronic structures. The energy penetration depth concept is used to determine a first-order linear approximation for the reduction of the mirror peak reflectivity of the QE mirror as a function of the mirror material parameters and the number of layers. The expression can be applied in the limit of small loss. The mathematical analysis and expressions for the absorptance and the peak reflectivity of a dielectric mirror with weak material absorption are presented. The use of the results is illustrated for a typical vertical cavity surface-emitting laser structure     

利用介质膜高反镜实现“猫眼”目标有效隐身

针对激光主动探测系统的主要工作波长为1 064nm,提出了一种利用介质膜高反镜实现"猫眼"目标隐身的方案。利用单波长介质膜高反镜的反射率特性,将介质膜高反镜与"猫眼"目标光轴以一定角度装配,推导了加载介质膜高反镜的理想"猫眼"目标回波功率模型,并给出了典型算例。通过实验方法分析了介质膜高反镜的反射率特性,修正了45°激光入射角的平均反射率值。典型"猫眼"目标的外场实验表明,在有限"牺牲"成像质量的前提下,介质膜高反镜可大大降低"猫眼"目标的"猫眼"效应,实现光电装备的有效隐身。     

Epitaxial Bragg mirrors for the mid-infrared and their applications

Bragg interference mirrors consisting of stacks of dielectric layers with an optical thickness of a quarter wavelength are of great importance for optoelectronic device applications. For the mid-infrared spectral range mirrors with high reflectivity stop bands are fabricated from combinations of Pb_1−xEu_xTe/EuTe materials by molecular beam epitaxy on BaF₂ substrates. These mirrors designed by the transfer matrix method exhibit reflectivities in excess of 99% by only 3 Bragg mirror layer pairs and very wide stop band regions, reaching a width of up to 60% of the target wavelength. Based on these very efficient mirrors, planar microcavities are demonstrated with an ultra-high effective finesse of up to 1700. Stimulated emission between 3 and 6 μm is obtained by optically pumping a vertical-cavity surface-emitting laser containing PbTe quantum wells with Pb_1−xEu_xTe barriers as active medium embedded between two dielectric Bragg mirrors. Depending on the design of the resonator, pulsed laser operation is observed up to 65°C. The enhancement of light absorption in the cavity is used to study the absorption of superlattices containing correlated self-organized PbSe quantum dots.     

Low threshold InGaAs/GaAs 45° folded cavity surface-emittinglaser grown on structured substrates

A novel folded cavity surface-emitting laser structure integrating a horizontal cavity InGaAs/GaAs laser grown on a structured substrate with a high reflectivity Bragg reflector has been fabricated. Devices with threshold currents of 8 mA and CW wall plug efficiencies at 5% at 6 mW output power have been demonstrated at a wavelength of 0.99 μm. By combining a cleaved uncoated mirror with the 45° deflecting mirror the authors have obtained threshold current as low as 5 mA for a device 450 μm long     

利用光纤环镜进行优化的掺镱光纤激光器

提出了利用光纤环形镜和高反射率光纤光栅做腔镜的F P腔掺镱光纤激光器的优化设计结构。光纤环形镜的宽带反射特性使抽运光能够充分被介质吸收 ,提高激光器的转化效率 ;其反射率可调特性容易得到最佳耦合输出比 ,当光纤长度改变时 ,不必更换输出腔镜就可以得到最佳功率输出。光纤长度 7m ,抽运功率 5 1mW时 ,激光器输出功率为 5 6 5mW ,斜率效率为 19%。与其他结构光纤激光器相比 ,这种优化结构效率更高     

窄线宽LD泵浦双包层光纤激光器

报道了LD泵浦的窄线宽双包层光纤（DCF）激光器，从理论和实验数值模拟了激光输出功率对输出镜反射率，光纤长度和吸收泵浦功率的依赖关系，进而进行了实验，实验中选用光纤布拉格光栅（FBG）作为输入腔镜，利用光纤端面菲涅耳反射作为输出腔镜，得到了窄线宽的单模激光输出。最大输出功率421mW，斜率效率78.2%，激光中心波长1086.92nm，谱线宽度0.16nm。     

Analysis of nonplanar wave propagation through multilayered Braggreflectors for folded cavity and vertical cavity surface emitting laserstructures

A theoretical approach to nonplanar wave propagation through Bragg reflector multilayer structures is presented. The theory is applied to the optical coupling and feedback in a folded cavity surface emitting laser using a 45° deflection mirror-epitaxial Bragg reflector arrangement. The effects of the nonplanar wave propagation on the Bragg mirror reflectivity in vertical cavity surface emitting lasers is also examined. Experimental verification of the theory is presented in a novel folded cavity surface emitting laser structure integrating a horizontal cavity InGaAs-GaAs laser grown on a structured substrate with a high reflectivity Bragg reflector     

Design studies for distributed Bragg reflectors for short-cavityedge-emitting lasers

In conventional edge-emitting lasers, mirror reflectivity is ~0.3-0.4 so that very short cavities have an unacceptable loss. To decrease the mirror losses, one can conceive of an external distributed Bragg reflector (DBR) structure produced by etching. We examine the design considerations for such mirrors. Using a finite-difference time-domain (FDTD) scheme, we numerically simulate the propagation of a Gaussian wave packet in a laser cavity with an external DBR structure on one end. We find that despite the divergence of light at the semiconductor-air interface, high reflectivities (>90%) can be obtained using only a few mirrors, provided a low refractive index material (such as air) is one of the components of the DBR period. In our modeling, we include fluctuations based on factors such as lithographical error, etch error, and off-design wavelength lasing. Our results indicate that the external DBR is highly tolerant of such factors. In addition, simulations done using material with higher refractive index than air in the DBR structure indicate that it is possible for insulators to be deposited in the DBR structure, yet allow high reflectivity     

基于光纤光栅谐振腔的双包层光纤激光器

理论分析了线型腔双包层光纤激光器的输出特性,包括光纤长度、光纤损耗及后腔镜反射率对激光输出功率和阈值泵浦功率的影响.设计了基于光纤光栅谐振腔的双包层光纤激光器,采用锥度光纤实现了泵浦模块与双包层光纤之间的低损耗连接,实现了全光纤化的掺Yb3 双包层光纤激光器,其阈值泵浦功率为300 mW,在泵浦入纤功率为17 W时达到了10.5 W的最大激光输出功率,斜率效率为62%.     

(Al,Ga)Sb long-wavelength distributed Bragg reflectors

The authors have grown long-wavelength distributed Bragg reflectors (DBRs), using alternating layers of the semiconductors AlSb and (Al,Ga)Sb, and measured their properties. The large refractive index ratio available with these materials allows for high-reflectivity mirrors with relative few mirror pairs. A simple 10-period AlSb/GaSb DBR had a maximum reflectivity of over 98% at a wavelength of 1.92 μm, and a 12-period Al_0.2Ga_0.8Sb/AlSb DBR exhibited reflectance greater than 99% at 1.38 μm. These structures are easily grown by molecular beam epitaxy (MBE) and are suitable for use in surface-normal photonic devices operating at long wavelengths     

Modeling and optimization of short Er/sup 3+/-Yb/sup 3+/ codoped fiber lasers

A theoretical study of short Er/sup 3+/- Yb/sup 3+/ codoped fiber lasers (EYDFLs) is presented. Examples include centimeter-length EYDFLs pumped at 978 nm, with distributed Bragg reflector (DBR) mirrors at both fiber ends. Approximate quasi-analytical solutions are shown to be in excellent agreement with the exact numerical solution of the rate equations. Using the quasi-analytical model, we demonstrate a design optimization of a short EYDFL. The effects of the Yb/sup 3+/ concentration, laser wavelength, output mirror reflectivity, and pump wavelength are considered and discussed with relation to the optimal laser length and output efficiency.     

Dual mirror and resonant cavity operating at 1.3 and 1.55 μm

A GaAs/AlAs Bragg mirror with two reflectivity bands centred at 1.3 and 1.55 μm is reported. High reflectivity is achieved in both bands and good agreement is observed between measured and simulated reflectivities. A microcavity structure is proposed that is resonant at both wavelengths. Such structures can be used to enhance the absorption or emission of signals at the two wavelengths     

Variable reflectance vertical cavity surface emitting lasers

Singlemode operation in 850 nm vertical cavity surface emitting lasers is reported. The singlemode behaviour results from a radially-varying number of periods in the top distributed Bragg reflector mirror. At the centre of the device there are six additional quarter-wave layers (three periods) as compared to the edge. This provides higher mirror reflectivity to the fundamental mode without adding loss. Thus the top mirror geometry promotes singlemode operation of the laser from threshold to rollover     

SESAM实现脉冲式Nd∶YAG激光器的被动锁模特性研究

为了研究半导体可饱和吸收镜的被动锁模特性,采用中科院半导体所提供的半导体可饱和吸收镜,实现了脉冲式Nd:YAG激光器1.06μm激光的被动锁模,获得了稳定的皮秒激光脉冲序列输出.经自相关实验装置测量,其锁模激光脉冲宽度大约为48.2ps,脉冲序列的能量为24mJ,实验中采用直腔结构的谐振腔,该腔结构简单、易于调整.理论上分析了1.06μm半导体可饱和吸收镜结构及被动锁模基本原理,计算并模拟了半导体可饱和吸收镜中布喇格反射层不同周期时对应的反射谱图以及不同周期时中心频率处布喇格反射层的反射率曲线.结果表明,随着布喇格反射层周期数的增加,其中心波长处的反射率也随着增加.当周期数大于13时,其中心波长反射率超过99%.半导体可饱和吸收镜是实现Nd:YAG激光器的被动锁模的理想锁模器件.     

InP-based optically pumped VECSEL operating CW at 1550 nm

We present a vertical external-cavity surface-emitting laser operating at 1550 nm. The laser comprises an InGaAsP-based gain element, with a resonant periodic gain structure on top of a distributed Bragg reflector, and a high reflectivity spherical mirror as the external reflector. Optical pumping is achieved using a 1250-nm fiber Raman laser. A maximum continuous output power of 70 mW was obtained under multitransverse mode operation at 233 K. Under single-mode operation, we obtained a maximum power of 60 mW with a beam quality factor M/sup 2/ less than 1.1.     

Widely tunable bottom-emitting vertical-cavity SOAs

We present bottom-emitting tunable vertical-cavity semiconductor optical amplifiers (VCSOAs) with an effective wavelength tuning range of >20 nm. These devices utilize a high reflectivity micromechanically tunable Bragg mirror as the back reflector. Compared with our first generation tunable VCSOAs, the bottom-emitting devices exhibit a two-fold increase in the effective tuning range as well as a five-fold reduction in the required tuning voltage.