Fabrication and properties of SiC porous ceramics using a polyurethane preparation process

SiC porous ceramics can be prepared by introducing the polyurethane preparation method into the production process of ceramic biscuits, followed by sintering at 1300?°C for 2?h under N₂ flux after the cross-linking of polycarbosilane at 220?°C for 4?h in air. The microstructures, mechanical properties and infiltrations of the SiC porous ceramics are investigated in detail. The best dispersal effect comes from the SiC slurry with xylene as the solvent and a mixture of Silok®7096 (1?wt%) and Anjeka®6041 (4?wt%) as the dispersant. The compressive strength of SiC porous ceramics with high porosity (69.53%) reaches 16.9?MPa. The heat treatment can increase infiltration, the rate of which (4.296?×?10^?7 mm²) after the heat treatment at 750?°C in air is approximately two times faster than that before the heat treatment. The SiC porous ceramics fabricated in this study will have potential application in active thermal protection systems.     

Low-temperature preparation of porous SiC ceramics using phosphoric acid as a pore-forming agent and a binder

Porous SiC ceramics combine the properties of both SiC ceramics and porous materials. Herein, we design a facile method via pressureless sintering at relatively low temperatures for the synthesis of porous SiC ceramics. In the synthesis process, phosphoric acid was used as the sintering additive that reacted with SiO₂ on the surface of SiC to form phosphates. The formed phosphates acted as a binder to connect the SiC particles. At a fixed temperature, the phosphates were partially decomposed and released a large amount of gas. This changed the pore structure of the ceramics and greatly improved their porosity. Finally, we obtained the porous SiC ceramics with high porosity and high strength. We investigate the effects of H₃PO₄ content on the phase composition, microstructure, porosity, mechanical properties and thermal expansion coefficient of the prepared porous SiC ceramics. It was shown that at the sintering temperature of 1200 °C, the highest porosity of the samples can reach 70.42% when the H₃PO₄ content is 25 wt%, and their bending strength reaches 36.11 MPa at room temperature when the H₃PO₄ content is 15 wt%. In addition, the porous SiC ceramics show good high-temperature stability with a bending strength of 42.05 MPa at 1000 °C and the thermal expansion coefficient of 3.966 × 10⁻⁶/°C.     

Processing and properties of cordierite-silica bonded porous SiC ceramics

Cordierite-silica bonded porous SiC ceramics were fabricated by infiltrating a porous powder compact of SiC with cordierite sol followed by sintering at 1300–1400 °C in air. The porosity, average pore diameter and flexural strength of the ceramics varied 30–36 vol%, ~ 4–22 µm and ~ 13–38 MPa respectively with variation of sintering temperature and SiC particle sizes. In the final ceramics SiC particles were bonded by the oxidation-derived SiO₂ and sol-gel derived cordierite. The corrosion behaviour of sintered SiC ceramics was studied in acidic and alkaline medium. The porous SiC ceramics were observed to exhibit better corrosion resistance in acid solution.     

Permeability and corrosion resistance of porous SiOC-bonded SiC ceramics prepared by the preceramic polymer

Porous SiC ceramics have been used in high temperature flue gas filtration fields because of their excellent properties such as high strength, high temperature resistance, corrosion resistance, and long service time. This work reports the porous SiOC-bonded SiC ceramics prepared at low temperature. The properties of porous SiC ceramics were first investigated with silicone resin content from 10 to 25 wt%, and then the effects of different pore-forming agent contents on the behaviors of porous SiC ceramics were discussed by adjusting poly (methyl methacrylate) PMMA microbeads from 5 to 20 wt%. The prepared porous SiC ceramics showed apparent porosity from 17.3% to 57.7%, compressive strength from 6 to 216 MPa, and Darcy permeability k₁ ranging from 7.02 × 10⁻¹⁴ to 1.45 × 10⁻¹² m². The corrosion behavior of porous SiC ceramics was investigated in acidic and alkaline media. The porous SiC ceramics showed better corrosion resistance in acidic solutions.     

Effect of temperature on the structure and mechanical properties of SiC–TiB2 composite ceramics by solid-phase spark plasma sintering

SiC composite ceramics have good mechanical properties. In this study, the effect of temperature on the microstructure and mechanical properties of SiC–TiB₂ composite ceramics by solid-phase spark plasma sintering (SPS) was investigated. SiC–TiB₂ composite ceramics were prepared by SPS method with graphite powder as sintering additive and kept at 1700 °C, 1750 °C, 1800 °C and 50 MPa for 10min.The experimental results show that the proper TiB₂ addition can obviously increase the mechanical properties of SiC–TiB₂ composite ceramics. Higher sintering temperature results in the aggregation and growth of second-phase TiB₂ grains, which decreases the mechanical properties of SiC–TiB₂ composite ceramics. Good mechanical properties were obtained at 1750 °C, with a density of 97.3%, Vickers hardness of 26.68 GPa, bending strength of 380 MPa and fracture toughness of 5.16 MPa m^1/2.     

Microstructures and mechanical properties of high-entropy (Ti0.2Zr0.2Hf0.2Nb0.2Ta0.2)C ceramics with the addition of SiC secondary phase

The relationships between microstructures and mechanical properties especially strength and toughness of high-entropy carbide based ceramics are reported in this article. Dense (Ti_0.2Zr_0.2Hf_0.2Nb_0.2Ta_0.2)C (HEC) and its composite containing 20 vol.% SiC (HEC-20SiC) were prepared by spark plasma sintering. The addition of SiC phase enhanced the densification process, resulting in the promotion of the formation of the single-phase high-entropy carbide during sintering. The high-entropy carbide phase demonstrated a fast grain coarsening but SiC particles remarkably inhibited this phenomena. Dense HEC and HEC-20SiC ceramics sintered at 1900 °C exhibits four-point bending strength of 332 ± 24 MPa and 554 ± 73 MPa, and fracture toughness of 4.51 ± 0.61 MPa·m^1/2 and 5.24 ± 0.41 MPa·m^1/2, respectively. The main toughening mechanism is considered to be crack deflection by the SiC particles.     

Mechanical and Thermal Properties of Pressureless Sintered Silicon Carbide Ceramics with Alumina–Yttria–Calcia

The effect of sintering temperature on the mechanical and thermal properties of SiC ceramics sintered with Al₂O₃–Y₂O₃–CaO without applied pressure was investigated. SiC ceramics containing A₂O₃–Y₂O₃–CaO as sintering additives can be sintered to >97% theoretical density at temperatures between 1750°C and 1900°C without applied pressure. A toughened microstructure, consisting of relatively large elongated grains and relatively small equiaxed grains, has been obtained when sintered at temperatures as low as 1800°C for 2 h in an argon atmosphere without applied pressure. The achievement of toughened microstructures under such mild conditions is the result of the additive composition. The thermal conductivity of the SiC ceramics increased with increasing sintering temperature because of the decrease in the lattice oxygen content of the SiC grains. Typical sintered density, flexural strength, fracture toughness, hardness, and thermal conductivity of the 1850°C‐sintered SiC, which consisted of 62.2% 4H, 35.7% 6H, and 2.1% 3C, were 99.0%, 628 MPa, 5.3 MPa·m^1/2, 29.1 GPa, and 80 W·(m·K)^?1, respectively.     

Reactive Hot Pressing of ZrC–SiC Ceramics at Low Temperature

Composites of ZrC–SiC with relative densities in excess of 98% were prepared by reactive hot pressing of ZrC and Si at temperature as low as 1600°C. The reaction between ZrC and Si resulted in the formation of ZrC_1?x, SiC, and ZrSi. Low‐temperature densification of ZrC?SiC ceramics is attributed to the formed nonstoichiometric ZrC_1?x and Zr–Si liquid phase. Adding 5 wt% Si to ZrC, the three‐point bending strength of formed ZrC_0.8–13.4 vol%SiC ceramics reached 819 ± 102 MPa with hardness and toughness being 20.5 GPa and 3.3 MPa·m^1/2, respectively.     

Effects of SDBS and ZrO2 additives on the microstructure and properties of silicon-bonded SiC porous ceramics

Porous silicon-bonded silicon carbide (SBSC) ceramics were prepared under argon atmosphere, with silicon as pore former and bonding material, simultaneously, sodium dodecyl benzene sulfonate (SDBS) and ZrO₂ as sintering additives, the effects of SDBS and ZrO₂ on the porosity, pore size, mechanical, physical and thermal properties and microstructures were investigated. The results suggested that suitable content of SDBS and ZrO₂ could not only effectively lower the sintering temperature to 1450 °C due to the sticky flow of molten silicon, but also increase the pore structure and improve the bending strength. The reason for this is that SDBS decomposed into Na₂O which reacted with ZrO₂ and impurity SiO₂, which was the native oxide film on the surface of SiC particles, to form a bonding phase between SiC particles to improve the bending strength; meanwhile, the disappearances of impurity SiO₂ would benefit the bond of molten silicon and silicon carbide particles, and silicon melt leaving pores in its original position to increase the pore structure. The optimal apparent porosity, bending strength, average pore size, gas permeance and residual bending strength after thermal shock cycles of SBSC porous ceramic sintered at 1450 °C with 5 wt% SDBS and 6 wt% ZrO₂ were 38.33%, 55.4 MPa, 11.3 μm, 106.4 m³/m²·h·kPa and 28.2 MPa, respectively.     

Mullite rod-enhanced porous SiC ceramics prepared at low temperature from photovoltaic waste

In this paper, porous SiC ceramics (PSCs) were fabricated from photovoltaic waste at low temperatures. The effects of different additives and sintering temperatures on PSCs were studied in detail. The temperature of PSCs preparation can be reduced to 850?°C by adding MoO₃ as catalyst. The PSCs are reinforced by mullite rods grown in-situ, they also have a high permeability coefficient due to their network structure. From 850?°C to 1200?°C, the open porosity of PSCs changed slightly, and was within 45.32?±?0.6%. The PSCs produced at 1000?°C had the highest gas permeability coefficient of 8.24?×?10^–11?m² and the highest flexural strength of 50.17?MPa. However, the same PSCs could not be fabricated at 850?°C when Y₂O₃ or CeO₂ were used as sintering aids. This study provides an environment-friendly method for reusing photovoltaic waste and reducing the cost of preparing PSCs.     

Effect of carbon content on electrical,thermal, and mechanical properties of porous SiC ceramics with B4C and C additives

The electrical, thermal, and mechanical properties of porous SiC ceramics with B₄C-C additives were investigated as functions of C content and sintering temperature. The electrical resistivity of porous SiC ceramics decreased with increases in C content and sintering temperature. A minimal electrical resistivity of 4.6 × 10^?2 Ω·cm was obtained in porous SiC ceramics with 1 wt% B₄C and 10 wt% C. The thermal conductivity and flexural strength increased with increasing sintering temperature and showed maxima at 4 wt% C addition when sintered at 2000 °C and 2100 °C. The thermal conductivity and flexural strength of porous SiC ceramics can be tuned independently from the porosity by controlling C content and sintering temperature. Typical electrical resistivity, thermal conductivity, and flexural strength of porous SiC ceramics with 1 wt% B₄C-4 wt% C sintered at 2100 °C were 1.3 × 10^?1 Ω·cm, 76.0 W/(m·K), and 110.3 MPa, respectively.     

Structural design and energy absorption mechanism of laminated SiC/BN ceramics

The laminated silicon carbide/boron nitride (SiC/BN) ceramics with different structural designs were fabricated by pressureless sintering at 1900?°C for 1?h in argon flow. The alumina (Al₂O₃)-and yttrium(III) oxide (Y₂O₃)-doped SiC ceramic exhibited a significant intergranular fracture behavior, which could be attributed to the yttrium aluminum garnet (YAG) phase located at the grains boundaries. The bending strength and fracture toughness were used to characterize the crack propagation including the delamination cracking, crack kinking, and crack deflection. The energy absorption in the process of crack propagation was characterized by the work of fracture (WOF) and damping capacity. The mode of crack propagation changed with the change in the structure and variation of BN content in the BN layer. The delamination cracks occurred inside the BN layer or at the interface between SiC and BN layers. The sample with a gradient structure exhibited the combination of delamination cracks occurring at the interface and inside the BN layer, which showed the maximum WOF of 2.43?KJ?m^?2, bending strength of 300?MPa, and fracture toughness of 8.5?MPa?m^1/2. The damping capacity varied with the change of the structure and the amplitude. The sample with a gradient structure exhibited the damping capacity of 0.088 and the maximum loss modulus of 9.758?GPa.     

Effects of SiC whiskers on the mechanical properties and microstructure of SiC ceramics by reactive sintering

As-received and pre-coated SiC whiskers (SiC_w)/SiC ceramics were prepared by phenolic resin molding and reaction sintering at 1650 °C. The influence of SiC_w on the mechanical behaviors and morphology of the toughened reaction-bonded silicon carbide (RBSC) ceramics was evaluated. The fracture toughness of the composites reinforced with pre-coated SiC_w reached a peak value of 5.6 MPa m^1/2 at 15 wt% whiskers, which is higher than that of the RBSC with as-received SiC_w (fracture toughness of 3.4 MPa m^1/2). The surface of the whiskers was pre-coated with phenolic resin, which could form a SiC coating in situ after carbonization and reactive infiltration sintering. The coating not only protected the SiC whiskers from degradation but also provided moderate interfacial bonding, which is beneficial for whisker pull-out, whisker bridging and crack deflection.     

Controllable preparation of porous ZrB2–SiC ceramics via using KCl space holders

In this work, a novel and facile technique based on using KCl as space holders, along with partial sintering (at 1900 °C for 30 min), was explored to prepare porous ZrB₂–SiC ceramics with controllable pore structure, tunable compressive strength and thermal conductivity. The as-prepared porous ZrB₂–SiC samples possess high porosity of 45–67%, low average pore size of 3–7 μm, high compressive strength of 32–106 MPa, and low room temperature thermal conductivity of 13–34 W m⁻¹ K⁻¹. The porosity, pore structure, compressive strength and thermal conductivity of porous ZrB₂–SiC ceramics can be tuned simply by changing KCl content and its particle size. The effect of porosity and pore structure on the thermal conductivity of as-prepared porous ZrB₂–SiC ceramics was examined and found to be consistent with the classical model for porous materials. The poring mechanism of porous ZrB₂–SiC samples via adding pore-forming agent combined with partial sintering was also preliminary illustrated.     

Preparation of porous SiC-Al2O3 ceramics via gelcasting utilising a shrinkable pore-forming agent and oxidised coarse-grained SiC

By utilising soaked millet as a shrinkable pore-forming agent, porous silicon carbide-alumina (SiC-Al₂O₃) ceramics were prepared via gelcasting. The fabrication of SiC-Al₂O₃ ceramics based on oxidised and unoxidised coarse-grained SiC was also studied. The water swelling, drying shrinkage, and low-temperature carbonisation of the millet were investigated. We found that the shrinkage of the soaked millet was greater than that of gel body during drying, which left large gaps that prevented shrinkage stresses from destroying the gel body. Low-temperature carbonisation of the millet should be performed slowly at 220–240?°C because its expansion rate increases to 45% at 250?°C, resulting in the cracking of samples. At a constant sintering temperature, the flexural strength of the SiC-Al₂O₃ ceramics prepared with SiC powders oxidised at 1000?°C was the highest, indicating that oxidised powders can successfully decrease the required sintering temperature and improve the flexural strength of composite ceramics. Based on our optimised process, porous SiC-Al₂O₃ ceramics were sintered at 1500?°C for 2?h. When their skeletons were fully developed, their pore sizes were in the range of 1.5–2?mm. Their porosity and flexural strength were 60.2–65.1% and 8.3–10.5?MPa, respectively.     

Processing and properties of silica-bonded porous nano-SiC ceramics with extremely low thermal conductivity

Silica-bonded porous nano-SiC ceramics with extremely low thermal conductivity were prepared by sintering nano-SiC powder-carbon black template compacts at 600–1200 °C for 2 h in air. The microstructure of the silica-bonded porous nano-SiC ceramics consisted of SiC core/silica shell particles, a silica bonding phase, and hierarchical (meso/macro) pores. The porosity and thermal conductivity of the silica-bonded porous nano-SiC ceramics can be controlled in the ranges of 8.5–70.2 % and 0.057–2.575 Wm⁻¹ K⁻¹, respectively, by adjusting both, the sintering temperature and template content. Silica-bonded porous nano-SiC ceramics with extremely low thermal conductivity (0.057 Wm⁻¹ K⁻¹) were developed at a very low processing temperature (600 °C). The typical porosity, average pore size, compressive strength, and specific compressive strength of the porous nano-SiC ceramics were ∼70 %, 50 nm, 2.5 MPa, and 2.7 MPa·cm³/g, respectively. The silica-bonded porous nano-SiC ceramics were thermally stable up to 1000 °C in both air and argon atmospheres.     

Improving specific stiffness of silicon carbide ceramics by adding boron carbide

A strategy for improving the specific stiffness of silicon carbide (SiC) ceramics by adding B₄C was developed. The addition of B₄C is effective because (1) the mass density of B₄C is lower than that of SiC, (2) its Young’s modulus is higher than that of SiC, and (3) B₄C is an effective additive for sintering SiC ceramics. Specifically, the specific stiffness of SiC ceramics increased from ~142 × 10⁶ m²?s^?2 to ~153 × 10⁶ m²?s^?2 when the B₄C content was increased from 0.7 wt% to 25 wt%. The strength of the SiC ceramics was maximal with the incorporation of 10 wt% B₄C (755 MPa), and the thermal conductivity decreased linearly from ~183 to ~81 W?m^?1?K^?1 when the B₄C content was increased from 0.7 to 30 wt%. The flexural strength and thermal conductivity of the developed SiC ceramic containing 25 wt% B₄C were ~690 MPa and ~95 W?m^?1?K^?1, respectively.     

High-temperature properties and interface evolution of C/SiBCN composites prepared by precursor infiltration and pyrolysis

C/SiBCN composites with a density of 1.64 g/cm³ were prepared via precursor infiltration and pyrolysis and the bending strength and modulus at room temperature was 305 MPa and 53.5 GPa. The precursor derived SiBCN ceramics showed good thermal stability at 1600 °C and the SiC and Si₃N₄ crystals appeared above 1700 °C. The bending strength of the composites was 180 MPa after heat treatment at 1500 °C, and maintained at 40 MPa-50 MPa after heat treatment for 2 h at 1600 °C–1900 °C. In C/SiBCN composites, SiBCN matrix could retain amorphous up to 1500 °C and SiC grains appeared at 1600 °C but without Si₃N₄. The reason for no detection of Si₃N₄ was that the carbon fiber reacted with Si₃N₄ to form an interface layer (composed of SiC and unreacted C) and a polycrystalline transition layer (composed of B and C elements), leading to the degradation of the mechanical properties.     

Direct bonding of silicon carbide ceramics sintered with yttria

SiC ceramics sintered with yttria were successfully joined without an interlayer by conventional hot pressing at lower temperatures (2000–2050 °C) compared to those of the sintering temperatures (2050–2200 °C). The joined SiC ceramics sintered with 2000 ppm Y₂O₃ showed almost the same thermal conductivity (˜198 Wm⁻¹ K⁻¹), fracture toughness (3.7 ± 0.2 MPa m^1/2), and hardness (23.4 ± 0.8 GPa) as those of the base material, as well as excellent flexural strength (449 MPa). In contrast, the joined SiC ceramics sintered with 4 wt% Y₂O₃ showed very high thermal conductivity (˜204 Wm⁻¹ K⁻¹) and excellent flexural strength (˜505 MPa). Approximately 16–22% decreases in strength compared to those of the base SC materials were observed in both joined ceramics, due to the segregation of liquid phase at the interface. This issue might be overcome by preparing well-polished and highly flat surfaces before joining.     

Pressureless sintering of SiC ceramics with improved specific stiffness

The effects of B₄C content on the specific stiffness and mechanical and thermal properties of pressureless-sintered SiC ceramics were investigated. SiC ceramics containing 2.5 wt% C and 0.7–20 wt% B₄C as sintering aids could be sintered to ≥ 99.4% of the theoretical density at 2150 °C for 1 h in Ar. The specific stiffness of SiC ceramics increased from 136.1 × 10⁶ to 144.4 × 10⁶ m²‧s⁻² when the B₄C content was increased from 0.7 to 20 wt%. The flexural strength and fracture toughness of the SiC ceramics were maximal with the incorporation of 10 wt% B₄C (558 MPa and 3.69 MPa‧m^1/2, respectively), while the thermal conductivity decreased from ∼154 to ∼83 W‧m⁻¹‧K⁻¹ when the B₄C content was increased from 0.7 to 30 wt%. The flexural strength and thermal conductivity of the developed SiC ceramic containing 20 wt% B₄C were ∼346 MPa and ∼105 W‧m⁻¹‧K⁻¹, respectively.