共查询到20条相似文献,搜索用时 62 毫秒
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在SIMOX SOI超薄硅衬底上外延生长了高质量SiGe合金薄膜来制备SGOI(SiGe on insulator)样品,并研究了其在1050℃氧化气氛中的高温退火行为.用Raman,DCXRD,RBS和光学显微镜等分析手段对SGOI样品在退火前后的性能进行了表征.分析结果表明:SGOI样品表面的穿透位错密度约为5×105cm-2;高温退火处理可以促进SGOI样品中异质外延生长SiGe合金薄膜的弛豫化和超薄Si夹层向SiGe合金薄膜的转化,进一步提高SiGe薄膜的晶体质量,并且有助于获得高Ge组分的SGOI材料. 相似文献
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在SIMOX SOI超薄硅衬底上外延生长了高质量SiGe合金薄膜来制备SGOI(SiGe on insulator)样品,并研究了其在1050℃氧化气氛中的高温退火行为.用Raman,DCXRD,RBS和光学显微镜等分析手段对SGOI样品在退火前后的性能进行了表征.分析结果表明:SGOI样品表面的穿透位错密度约为5e5cm-2;高温退火处理可以促进SGOI样品中异质外延生长SiGe合金薄膜的弛豫化和超薄Si夹层向SiGe合金薄膜的转化,进一步提高SiGe薄膜的晶体质量,并且有助于获得高Ge组分的SGOI材料. 相似文献
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制备了氧化铪(HfO2)高k介质栅Si基Ge/SiGe异质结构肖特基源漏场效应晶体管(SB-MOSFET)器件,研究了n型掺杂Si0.16Ge0.84层对器件特性的影响,分析了n型掺杂SiGe层降低器件关态电流的机理。使用UHV CVD沉积系统,采用低温Ge缓冲层技术进行了材料生长,首先在Si衬底上外延Ge缓冲层,随后生长32 nm Si0.16Ge0.84和12 nm Ge,并生长1 nm Si作为钝化层。使用原子力显微镜和X射线衍射对材料形貌和晶体质量进行表征,在源漏区沉积Ni薄膜并退火形成NiGe/Ge肖特基结,制备的p型沟道肖特基源漏MOSFET,其未掺杂Ge/SiGe异质结构MOSFET器件的空穴有效迁移率比相同工艺条件制备的硅器件的高1.5倍,比传统硅器件空穴有效迁移率提高了80%,掺杂器件的空穴有效迁移率与传统硅器件的相当。 相似文献
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Si1-xGex/Si应变材料的生长及热稳定性研究 总被引:1,自引:1,他引:1
利用分子束外延(MBE)技术生长了Ge组份为0.1-0.46的Si1-xGex外延层。X射线衍射线测试表明,SiGe/Si异质结材料具有良好的结晶质量和陡峭界面,其它参数与可准确控制。通过X射线双晶衍射摆曲线方法,研究了经700℃、800℃和900℃退火后应变SiGe/Si异质结材料的热稳定性。结果表明,随着退火温度的提高,应变层垂直应变逐渐减小,并发生了应变弛豫,导致晶体质量退化;且Ge组分越小,Si1-xGex应变结构的热稳定性越好;室温下长时间存放的应变材料性能稳定。 相似文献
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利用数值模拟软件ISE TCAD对绝缘层上应变SiGe(SGOI)和Si(SOI)p-MOSFET的电学特性进行了二维数值模拟.计算结果表明,与传统的SOI p-MOSFET相比,SGOI p-MOSFET的漏源饱和电流几乎要高出两倍; 其亚阈值电流要高出1~3个数量级.Ge合金组分作为应变SiGe沟道MOSFET的重要参数,就不同Ge合金组分对SGOI p-MOSFET的电学特性的影响也进行了较为深入的研究.随着Ge合金组分的增大,SGOI p-MOSFET的总体电学性能有所提高. 相似文献
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Michael Reilly 《半导体技术》2004,29(12)
DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system. 相似文献
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Thomas M.Trexler 《半导体技术》2004,29(5)
From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test. 相似文献
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The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation. 相似文献
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The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high. 相似文献
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Today, micro-system technology and the development of new MEMS (Micro-Electro-Mechanical Systems) are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible. 相似文献
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GU Min-fen LIANG Zhong-cheng WANG Ren-zhou DONG Xiang-mei ZHANG Pei-ming CHEN Jia-bi 《光电子快报》2008,4(2):150-152
Waveguide multilayer optical card (WMOC) is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling & processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic (VB) language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor. 相似文献
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Qi-jiang Ran Pei-de Han Yu-jun Quan Li-peng Gao Fan-ping Zeng Chun-hua Zhao 《光电子快报》2008,4(4):239-242
This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel's. 相似文献
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The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well. 相似文献
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Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems. 相似文献
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An insert layer structure organic electroluminescent device(OLED) based on a new luminescent material (Zn(salen)) is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn(salen)/Liq/LiF/A1/CuPc/NPD/Zn(salen)/Liq/LiF/A1. Effective insert electrode layers comprising LiF(1nm)/Al(5 nm) are used as a single semitransparent mirror, and bilayer cathode LiF(1 nm)/A1(100 nm) is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect. 相似文献