共查询到20条相似文献,搜索用时 15 毫秒
1.
Javier Muoz Eduardo Lorenzo Jos Manuel Carrillo Rodrigo Moretn 《Progress in Photovoltaics: Research and Applications》2015,23(2):247-252
This paper describes the design of an original twin capacitive load that is able of tracing simultaneously the I–V characteristics of two photovoltaic modules. Besides, an example of the application of this dual system to the outdoor rating of photovoltaic modules is presented, whose results have shown a good degree of repeatability. Copyright © 2013 John Wiley & Sons, Ltd. 相似文献
2.
Moshe Averbukh Simon Lineykin Alon Kuperman 《Progress in Photovoltaics: Research and Applications》2013,21(5):1016-1024
The paper presents a simple approach to deriving I–V curves of photovoltaic panels and small arrays for arbitrary environmental conditions on the basis of three points of a single operating curve data and short current temperature coefficient only. The proposed method does not employ fitting of any type and is solely based on a numerical solution of a system of transcendental equations. The equations are expressed in a dimensionless form, simplifying both the solution and photovoltaic panel parameters' representation. The solution is used to find the values of normalized equivalent circuit elements for the available data and then perform an appropriate adjustment to obtain the operating curves for arbitrary conditions. The proposed method was applied to monocrystalline and polycrystalline commercial solar panels and was compared with both manufacturer‐provided and experimentally measured operating curves to analyze the approach applicability and accuracy. Copyright © 2012 John Wiley & Sons, Ltd. 相似文献
3.
Alexandre Jos Bühler Arno Krenzinger 《Progress in Photovoltaics: Research and Applications》2013,21(5):884-893
The variables presented in the current–voltage equation of a photovoltaic (PV) device are usually called PV parameters. There are several different methods for PV parameter extraction from measured data according to different models. However, many of these methods provide results that do not represent I–V curves of thin films devices correctly. This can occur because either the applied model or the PV parameter extraction methods are not suitable. It is also possible that the extracted parameters provide a good mathematical representation of the curves but without physical meaning (e.g. negative series resistance). This work presents a method for PV parameter extraction based on a modified double‐diode model. In this model, the ideality factor related to the recombination of the charge carriers in the space‐charge region is assumed as a variable. This method has been tested for different I–V curves of different PV module technologies providing very good results and parameters with physical meaning in all the cases. Copyright © 2012 John Wiley & Sons, Ltd. 相似文献
4.
Michel Piliougine David Elizondo Llanos Mora‐Lpez Mariano Sidrach‐de‐Cardona 《Progress in Photovoltaics: Research and Applications》2015,23(4):513-523
A neural network for modelling photovoltaic modules using angle of incidence and clearness index is proposed. Engineers require methods to estimate the output of a photovoltaic plant depending on meteorological conditions. Therefore, models for the grid inverter and the generator must be provided, and their outputs must be combined. The connection between both models is related to the maximum power point of the generator and how it is tracked by the inverter. That maximum power point under specific conditions of irradiance and module temperature is determined by the I–V curve of the module, which must be simulated under those conditions. Algebraic procedures were used to simulate the I–V curve. Recently, neural networks have been used for the same purpose. Previous methods only take into account the irradiance and the module temperature. The model proposed is based on neural networks, and it uses not only the irradiance and the module temperature but also the angle of incidence and the instantaneous clearness index as additional inputs. The normalised clearness replaces the standard clearness index because it allows the removal of the hourly trend found in this last index. This new model improves the results obtained with previous ones as it can distinguish amongst samples with the same solar irradiance and temperature values but with different angle of incidence and instantaneous clearness index. Results show that this model could be used to improve the accuracy of the tools used to forecast the output of photovoltaic plants. Copyright © 2014 John Wiley & Sons, Ltd. 相似文献
5.
Beatriz Galiana Carlos Algora Ignacio Rey‐Stolle 《Progress in Photovoltaics: Research and Applications》2008,16(4):331-338
The measurement of the dark I–V curve is one of the most straightforward methods for characterizing solar cells. Consequently, an accurate knowledge of its meaning is of high relevance for the comprehension and technological feedback of these devices. In this paper, an explanation of the dark I–V curve for concentrator III–V solar cells is presented using a 3D (three‐dimensional) model in order to provide a proper data fit that provides meaningful physical parameters that are also compatible and coherent with a data fit from illumination curves. The influence on the dark I–V curve of the most significant series resistance components of concentrator solar cells is also analysed concluding that only the vertical component as well as the front contact‐specific resistance can be assessable by means of this characterization method while both emitter and metal sheet resistances cannot be detected. For comparison purposes, the same experimental data have been fitted by means of a traditional two‐diode model showing that, although an accurate dark I–V curve fitting can be achieved, the extracted parameters are unable to reproduce illumination data since lumped models assume the same ohmic losses distribution for both dark and illumination conditions. Copyright © 2007 John Wiley & Sons, Ltd. 相似文献
6.
L. De Bernardez R. H. Buitrago 《Progress in Photovoltaics: Research and Applications》2006,14(4):321-327
A simple method of obtaining single cell dark I–V curves in a photovoltaic module was developed. The method does not require disassembling the module and was verified experimentally. From the dark I–V curves, the cell characteristic parameters were obtained. By following the time evolution of the characteristic parameters it is possible to determine the main degradation mechanisms and predict the mean life time of the module before failure. Copyright © 2005 John Wiley & Sons, Ltd. 相似文献
7.
Kyu‐Seok Lee 《Progress in Photovoltaics: Research and Applications》2013,21(2):195-201
A formalism is presented to understand the effect of distributed resistance of the window layer on the current–voltage characteristics of solar cells with parallel grids. Along the window/active‐layer interface, the current density and the electric potential are calculated iteratively from the current density–voltage relation and the Laplace equation, respectively. The former property is approximated in a series expansion of sinusoidal functions, which leads to an analytic solution to the electric potential in the window layer. The total current and the average current density are derived in analytic forms. A few calculated results are presented to show the influence of the distributed resistance of the window layer on the device performance. Copyright © 2011 John Wiley & Sons, Ltd. 相似文献
8.
Matthew Muller Sarah Kurtz Marc Steiner Gerald Siefer 《Progress in Photovoltaics: Research and Applications》2015,23(11):1557-1571
A complete procedure is presented for translating outdoor concentrator photovoltaic (CPV) I–V measurements to the Concentrator Standard Test Conditions (CTSC) (1000 W/m2 and 25 °C cell temperature). Methods are demonstrated for measuring all the necessary input parameters for the translation, including outdoor thermal transient measurements and indoor dark I–V curves. Four modules are subjected to the translation method based on multiple months of outdoor data, one module measured at National Renewable Energy Laboratory and three at Fraunhofer ISE. The modules are also characterized under a sun simulator to provide a comparison to the translation approach. The results show that translated CSTC efficiencies are in good agreement with the efficiencies from the solar simulator. Two of the modules agreed within 1%, whereas the other two modules agree within approximately 4%. An uncertainty analysis of the input parameters is discussed in the context of the total uncertainty associated with the translation to CSTC. The reference voltage and efficiency temperature coefficient are the key parameters impacting the translation uncertainty, whereas uncertainty in the outdoor data is driven by spectral and meteorological parameters. Copyright © 2015 John Wiley & Sons, Ltd. 相似文献
9.
Rodrigo Moretn Eduardo Lorenzo Javier Muoz 《Progress in Photovoltaics: Research and Applications》2014,22(12):1280-1284
This paper presents the measurement of the I–V curve of a 500‐kW PV generator by means of an own‐made capacitive load. It is shown that I–V curve analysis can also be applied to big PV generators and that when measuring the operation conditions with reference modules and taking some precautions (especially regarding the operation cell temperature), it is still a useful tool for characterizing them and therefore can be incorporated into maintenance procedures. As far as we know, this is the largest I–V curve measured so far. Copyright © 2013 John Wiley & Sons, Ltd. 相似文献
10.
M. Piliougine J. Carretero L. Mora‐Lpez M. Sidrach‐de‐Cardona 《Progress in Photovoltaics: Research and Applications》2011,19(5):591-602
This paper describes an experimental system developed in the photovoltaic laboratory at the University of Málaga (Spain) to measure the current–voltage curve of photovoltaic modules under outdoor conditions. The measurement is performed in an automated way by employing commercial instruments controlled by a computer using the GPIB standard. Several modules, selected sequentially through a set of relays, are biased by a four‐quadrant power supply while a function generator synchronizes two multimeters in order to acquire voltage and current values. The measurement uncertainties were also estimated. The proposed method for synchronizing the voltage and current measurements ensures that these measurements are performed simultaneously; this means that the estimated uncertainty is lower than those obtained using other previously proposed methods. The main electrical parameters are estimated. A user‐friendly application allows the user to configure several parameters, such as bias rate, voltage, and current limits and the number of points of the curve. Copyright © 2011 John Wiley & Sons, Ltd. 相似文献
11.
F. Martínez‐Moreno E. Lorenzo J. Muoz R. Moretn 《Progress in Photovoltaics: Research and Applications》2012,20(1):100-105
This paper reports on the IES‐UPM experience from 2006 to 2010 in the field of the characterization of PV arrays of commercial large PV plants installed in Spain within the framework of the profitable economic scenarios associated to feed‐in tariff laws. This experience has extended to 200 MW and has provided valuable lessons to minimize uncertainty, which plays a key role in quality assurance procedures. The paper deals not only with classic I–V measurements but also with watt‐metering‐based procedures. Particular attention is paid to the selection of irradiance and cell temperature sensors. Copyright © 2011 John Wiley & Sons, Ltd. 相似文献
12.
María Cruz Lpez‐Escalante María Carmen Fernandez Rafael Sierras Jose Ramon Ramos‐Barrado 《Progress in Photovoltaics: Research and Applications》2016,24(1):108-121
Determination of solar cell parameters by illuminated I–V measurement is a standard characterisation technique in the photovoltaic industry. These measurements are carried out under standard conditions (STC: 25 °C, 1000 W/m2 AM1.5G spectrum). It can be considered as the most crucial in‐line test for solar cells as it provides the industry with the conversion efficiency, and it is also a reliable quality control test. Reference cells are mainly used in testing equipment to set irradiance and working conditions in the tester/sorter, the rest of the cells being measured and classified by comparison with that reference. An accurate calibration of the irradiance at STC in cell testers and high precision in determining the main parameters of the I–V curve are required; a suitable design of the mechanical components and an adequate selection of different programme options should be made (distribution of the points measured, temperature correction or classification method). Here, we have studied the accuracy of an industrial solar simulator whose mechanical, electrical, electronic and software components were analysed with an individual solar device and a production sample. An uncertainty analysis was carried out in order to determine the power uncertainty and which components to improve in order to reduce it. Copyright © 2015 John Wiley & Sons, Ltd. 相似文献
13.
Benjamin L. Williams Sjoerd Smit Bas J. Kniknie Klaas J. Bakker Wytze Keuning W. M. M. Kessels Ruud E. I. Schropp M. Creatore 《Progress in Photovoltaics: Research and Applications》2015,23(11):1516-1525
The non‐uniform presence of shunting defects is a significant cause of poor reproducibility across large‐area solar cells, or from batch‐to‐batch for small area cells, but the most commonly used value for shunt parameterisation (the shunt resistance) fails to identify the cause for shunting. Here, the use of equivalent circuit models to describe dark current–voltage characteristics of ZnO:Al/i‐ZnO/CdS/CIGS/Mo devices in order to understand shunting behaviour is evaluated. Simple models, with a single shunt pathway, were tested but failed to fit experimental data, whereas a more sophisticated model developed here, which includes three shunting pathways, yielded excellent agreement throughout the temperature range of 183–323 K. The temperature dependence of fitting parameters is consistent with known physical models. Activation energies and contact barriers are determined from the model, and extracted diode factors are unique across the voltage range. A case study is presented whereby the model is used to diagnose poor reproducibility for CIGS devices (efficiency ~3–14% across a 100 cm2 plate). It's shown that lower efficiencies correlated with greater prevalence of Ohmic and non‐Ohmic shunt currents, which may form due to pinholes in absorber and buffer layers respectively, whereas the quality of the main junction was constant for all cells (diode factor ~1.5–2). Electron microscopy confirmed the presence of ZnO:Al/i‐ZnO/Mo and ZnO:Al/CIGS/Mo regions, supporting the multi‐shunt pathway scheme disclosed by modelling. While the model is tested with CIGS cells here, this general model is a powerful diagnostic tool for process development for any type of thin‐film device. Copyright © 2015 John Wiley & Sons, Ltd. 相似文献
14.
M. Victoria R. Herrero C. Domínguez I. Antn S. Askins G. Sala 《Progress in Photovoltaics: Research and Applications》2013,21(3):308-318
The irradiance and spectral distribution cast on the cell by a concentrating photovoltaic system, typically made up of a primary Fresnel lens and a secondary stage optical element, is dependent on many factors, and these distributions in turn influence the electrical performance of the cell. In this paper, the effect of spatial and spectral non‐uniform irradiance distribution on multi‐junction solar cell performance was analyzed using an integrated approach. Irradiance and spectral distributions were obtained by means of ray‐tracing simulation and by direct imaging at a range of cell‐to‐lens distances. At the same positions, I–V curves were measured and compared in order to evaluate non‐uniformity effects on cell performance. The procedure was applied to three different optical systems comprised a Fresnel lens with a secondary optical element consisting of either a pyramid, a dome, or a bare cell. Copyright © 2011 John Wiley & Sons, Ltd. 相似文献
15.
Johan Hernandez William Vallejo Gerardo Gordillo 《Progress in Photovoltaics: Research and Applications》2013,21(5):867-875
This work describes a method developed for estimating the energy delivered by building integrated photovoltaics systems operating under non‐standard conditions of irradiance and temperature. The method is based on calculation of the maximum power (PGmax) supplied by the modules array as a function of irradiance and ambient temperature, achieved by simulating its I–V and P–V curves using an algorithm which needs only the performance parameters supplied by the manufacturers. The energy generated by the PV system is estimated from monthly average values of PGmax calculated for using monthly average values of ambient temperature and irradiance obtained from data measured during 2 years. The method is applied to crystalline Si modules and tested by comparing the simulated I–V and P–V curves with those obtained by outdoor measurements as well as for comparing the energy produced during the years 2009 and 2010 with a 3.6 kWp building integrated photovoltaics system installed at the Universidad Nacional located in the city of Bogotá, Colombia, at 4°35′ latitude and 2.580 m altitude. The contrast of the simulated I–V and P–V curves for two different types of commercial Si‐modules with those experimentally obtained under real conditions indicated that the simulation method is reliably. Copyright © 2012 John Wiley & Sons, Ltd. 相似文献
16.
Huimin Zhang Hong Lin Chunjun Liang Hong Liu Jingjing Liang Yong Zhao Wenguan Zhang Mengjie Sun Weikang Xiao Han Li Stefano Polizzi Dan Li Fujun Zhang Zhiqun He Wallace C. H. Choy 《Advanced functional materials》2015,25(46):7226-7232
While perovskite light‐emitting diodes typically made with high work function anodes and low work function cathodes have recently gained intense interests. Perovskite light‐emitting devices with two high work function electrodes with interesting features are demonstrated here. Firstly, electroluminescence can be easily obtained from both forward and reverse biases. Secondly, the results of impedance spectroscopy indicate that the ionic conductivity in the iodide perovskite (CH3NH3PbI3) is large with a value of ≈10?8 S cm?1. Thirdly, the shift of the emission spectrum in the mixed halide perovskite (CH3NH3PbI3?xBrx) light‐emitting devices indicates that I? ions are mobile in the perovskites. Fourthly, this work shows that the accumulated ions at the interfaces result in a large capacitance (≈100 μF cm?2). The above results conclusively prove that the organic–inorganic halide perovskites are solid electrolytes with mixed ionic and electronic conductivity and the light‐emitting device is a light‐emitting electrochemical cell. The work also suggests that the organic–inorganic halide perovskites are potential energy‐storage materials, which may be applicable in the field of solid‐state supercapacitors and batteries. 相似文献
17.
Solid Electrolytes: Organic–Inorganic Perovskite Light‐Emitting Electrochemical Cells with a Large Capacitance (Adv. Funct. Mater. 46/2015)
下载免费PDF全文

Huimin Zhang Hong Lin Chunjun Liang Hong Liu Jingjing Liang Yong Zhao Wenguan Zhang Mengjie Sun Weikang Xiao Han Li Stefano Polizzi Dan Li Fujun Zhang Zhiqun He Wallace C. H. Choy 《Advanced functional materials》2015,25(46):7243-7243
18.
Fran Kurnia Chunli Liu Nallagatla Raveendra Chang Uk Jung Rama K. Vasudevan Nagarajan Valanoor 《Advanced Electronic Materials》2020,6(5)
Memristive switching, a nonlinear current–voltage (I–V) characteristic, has seen a tremendous surge in interest as an approach to achieve implementation of synaptic functions. The memristive switching behavior of self‐assembled NiO nanocrystals is investigated via scanning probe microscopy, based on first‐order reversal curve current–voltage spectroscopy. Synaptic switching is clearly observed as a direct consequence of filament growth (i.e., gradually increased conductance) in the nanocrystals. A spatial dependency of the conduction in the nanocrystals suggests that there is a localization of the switching filament. The current understanding of this localization ignores features related to local lateral variation current, which can generate an excessive local heat and temperature such as electrical dissipation. The observation of low electrical dissipation at the edge of the nanocrystals shows that less energy is wasted as heat such that the bias applied can be utilized more efficiently to assist the nucleation of the filament and thus reduces the power consumption. Electrical power dissipation is also found to scale with nanocrystal height and has spatial dependence within the nanocrystals. The combination of synaptic switching and high density of the nanocrystals demonstrate that it is feasible to exploit them to create a basic architecture for neuromorphic memory devices. 相似文献
19.
O. Breitenstein J. P. Rakotoniaina M. H. Al Rifai 《Progress in Photovoltaics: Research and Applications》2003,11(8):515-526
Infrared lock‐in thermography allows to image shunts very sensitively in all kinds of solar cells and also to measure dark currents flowing in certain regions of the cell quantitatively. After a summary of the physical basis of lock‐in thermography and its practical realization, four types of quantitative measurements are described: local I–V characteristics measured thermally up to a constant factor (LIVT); the quantitative measurement of the current through a local shunt; the evaluation of the influence of shunts on the efficiency of a cell as a function of the illumination intensity; and the mapping of the ideality factor n and the saturation current density J0 over the whole cell. The investigation of a typical multicrystalline solar cell shows that the shunts are predominantly responsible for deterioration of the low‐light‐level performance of the cell, and that variations of the injection current density related to crystal defects are predominantly determined by variation of J0 rather than of n. Copyright © 2003 John Wiley & Sons, Ltd. 相似文献
20.
Holger von Wenckstern Daniel Splith Stefan Lanzinger Florian Schmidt Stefan Müller Peter Schlupp Robert Karsthof Marius Grundmann 《Advanced Electronic Materials》2015,1(4)
pn‐Heterodiodes comprising the wide bandgap semiconducting oxide In2O3 and amorphous p‐conducting NiO or ZnCo2O4 are realized. In2O3 is grown at 600 °C and the amorphous p‐type oxides at room temperature by pulsed‐laser deposition. Highest rectification of about four orders of magnitude is observed for structures with Mg‐doped In2O3 layers having lower carrier density than undoped layers. The p‐ZnCo2O4/n‐In2O3 diodes do not show degradation at elevated temperatures of 150 °C, whereas the p‐NiO/n‐In2O3 diodes degrade irreversibly for T > 100 °C. Thermal admittance spectroscopy revealed shallow defect levels in the In2O3 layer with activation energy of about 12 and 250 meV, respectively. 相似文献