AND ANGULAR DISTRIBUTION OF SPUTTERED ATOMS OF INDIUM

The surface structures have been observed with SEM. We have found that the. topography of the sputtered surface significantly changes through controlling sample temperature during sputtering. The cause of the formation of the crater on the sputtered surface has been     

STUDY OF THE EFFECT OF FIRE RETARDERS ON THE PROPERTIES OF ANTICORROSION PRIMERS

Six anticorrosion primers were prepared respectively by using two fire retarders-APP and DBDPO. Properties of these primers were determined with four test methods-salt water immersion,salt water spray test,determination of impedance of coated steel and C. R. M. Results show that APP with definite water-soluble property reduced anticorrosion performance of the primers,while non water-soluble DBDPO would not affect the anticorrosion properties of the primers if the Pigment Volume Concentrations(P. V. C)were well calculated.     

THE LUBRICATING PROPERTIES OF ION-PLATING FILMS OF Pb-Sn ALLOY

Experimental results of the lubricating behaviour of Pb-Sn alloy films formed by ion-plating on brass substrates are given. It is shown that the film microhardness, friction coefficient and wear life per thickness are under the influence of the substrate. The wear failure of film appears to be film adhesion and transferring by the mating surface.     

SYNTHESIS OF PRECURSORS PTC-Ⅲ OF SiC FIBERS CONTAINING Ti

从聚硅烷(PS)与钛酸丁酯(Ti(OBu)_4)出发,不用任何反应促进剂直接合成了含Ti 的SiC 纤维的先驱体聚钛碳硅烷(PTC—Ⅲ)。在这一反应中,PS 裂解为含Si—H 键的低分子聚硅烷(LPS)。LPS 的的Si—H 键与Ti(OBu)_4反应并伴随着发生Si-Si 骨架向Si—C 骨架的转化。从PTC—Ⅲ出发已制得了有良好力学性能的含Ti 的SiC 纤维。本文研究了PS 与Ti(OBu)_4的反应及其对PTC 特性的影响。     

THE STUDY OF INTERFACE LAYER OF DIAMOND FILM AND GROWTH PROCESS

The interface layer of silicon substrates and diamond films is analyzed by SEM, AES, XPS methods in this paper, The results show clearly that there is a diffusion and bond-forming process between silicon substrates and active species (hydrogen. carbon sources). The interface layer is a gradual evolutional transition layer from Si to SiC and then to C. The early growth process of diamond films is also discussed here.     

DYNAMIC ASPECT OF THE INTERACTION OF DIATOMIC MOLECULES WITH METAL SURFACES

The dynamics of the scattering processes of diatomic molecules from metal surfaces has been studied with different theoretical approaches. Modified LEPS (London-Eyring-Polanyi-Sato) potential surfaces for several diatomie molecule-surface systems have been constructed and examined for the dynamic study. The surfaces are treated as rigid but corrugated. The potential parameters are adjusted to produce reliable potential hypersurfaces. Molecular dissociation, diffraction, adsorption and consequent desorption in the scattering processes have been observed through quasiclassieal trajectory calculations. The significance of the effective corrugation of the potential surfaces has been evaluated in calculating the dissociation and adsorption probabilities. Vibration-rotation-translation energy transfer in the inelastic scattering is investigated to understand the mechanism of selective adsorptions mediated through vibrational or rotational degrees of freedom. We have carried out quantum mechanical calculations to obtain the rotational and vibrational transition probabilities. Relative importance of rotational and vibrational transitions for each adsorbed state with respect to incidence energy has been carefully examined to determine the dominant factor which causes the adsorbed state. The results show that vibration mediation is an essential factor to the selective adsorption especially in the ease of higher incidence energies.     

INVESTIGATION OF SURFACE DAMAGE OF LiNbO_3 IMPLANTED BY Ti ION

In this paper, damages and annealing effects of X,Y and Z cut LiNbO-3 implanted by 350keV high energy Ti (1.5 x 10~(17) / cm~2) are studied. The surface damages of X,Y cut plates are nearly amorphous, but the surface damage of Z cut does not reach saturation. Radiation damage is mainly due to Nb moving atoms and Ti atoms occupy the interstitial sites. By annealing the sample at 1000℃, most damage is removed from the boundary between implanted layer and LiNbO_3 base to surface.