Narrow‐bandgap CuIn3Te5 thin‐film solar cells

We propose CuIn₃Te₅ as a ternary semiconductor material for narrow‐bandgap thin‐film solar cells. Well‐developed CuIn₃Te₅ grains were obtained at a substrate temperature of 250 °C by single‐step co‐evaporation. The best solar cell that was fabricated using 4·0‐µm‐thick CuIn₃Te₅ layers grown at 250 °C yielded a total area efficiency of 6·92% (V_oc = 407 mV, J_sc = 33·1 mA/cm², and FF = 0·514). To clarify the loss in the device performance, the cell was compared with a standard CuInSe₂ reference cell. A band diagram of the CdS/CuIn₃Te₅ solar cell was also presented. Copyright © 2011 John Wiley & Sons, Ltd.     

Improved performance in ZnO/CdS/CuGaSe2 thin‐film solar cells

We report the growth and characterization of improved efficiency wide‐bandgap ZnO/CdS/CuGaSe₂ thin‐film solar cells. The CuGaSe₂ absorber thickness was intentionally decreased to better match depletion widths indicated by drive‐level capacitance profiling data. A total‐area efficiency of 9·5% was achieved with a fill factor of 70·8% and a V_oc of 910 mV. Published in 2003 by John Wiley & Sons, Ltd.     

Simulation and fabrication of heterojunction silicon solar cells from numerical computer and hot‐wire CVD

In this paper, we will present a Pc1D numerical simulation for heterojunction (HJ) silicon solar cells, and discuss their possibilities and limitations. By means of modeling and numerical computer simulation, the influence of emitter‐layer/intrinsic‐layer/crystalline‐Si heterostructures with different thickness and crystallinity on the solar cell performance is investigated and compared with hot wire chemical vapor deposition (HWCVD) experimental results. A new technique for characterization of n‐type microcrystalline silicon (n‐µc‐Si)/intrinsic amorphous silicon (i‐a‐Si)/crystalline silicon (c‐Si) heterojunction solar cells from Pc1D is developed. Results of numerical modeling as well as experimental data obtained using HWCVD on µc‐Si (n)/a‐Si (i)/c‐Si (p) heterojunction are presented. This work improves the understanding of HJ solar cells to derive arguments for design optimization. Some simulated parameters of solar cells were obtained: the best results for J_sc = 39·4 mA/cm², V_oc = 0·64 V, FF = 83%, and η = 21% have been achieved. After optimizing the deposition parameters of the n‐layer and the H₂ pretreatment of solar cell, the single‐side HJ solar cells with J_sc = 34·6 mA/cm², V_oc = 0·615 V, FF = 71%, and an efficiency of 15·2% have been achieved. The double‐side HJ solar cell with J_sc = 34·8 mA/cm², V_oc = 0·645 V, FF = 73%, and an efficiency of 16·4% has been fabricated. Copyright © 2009 John Wiley & Sons, Ltd.     

Large area dye‐sensitized solar cells: material aspects of fabrication

Dye‐sensitized photoelectrochemical solar cells of large area are fabricated using highly conducting and optically transparent glass consisting of an inner layer of indium‐tin oxide and an outer layer of fluorine doped tin oxide. A method is described for the deposition of nanocrystalline films of TiO₂ consisting of large and small median size particles (30 and 5 nm, respectively) which promote porosity and light scattering. Incorporation of trace quantities of magnesium oxide into TiO₂ increased the efficiency of the cells. The energy conversion efficiency of a cell (AM 1·5, 1000 W m⁻² simulated sunlight) of area 21 cm² was found to be 7·2% compared to 5·6% in the absence of magnesium oxide. The mechanisms by which the magnesium oxide improves the cell performance are discussed. Copyright © 2006 John Wiley & Sons, Ltd.     

Highly‐efficient Cd‐free CuInS2 thin‐film solar cells and mini‐modules with Zn(S,O) buffer layers prepared by an alternative chemical bath process

Recent progress in fabricating Cd‐ and Se‐free wide‐gap chalcopyrite thin‐film solar devices with Zn(S,O) buffer layers prepared by an alternative chemical bath process (CBD) using thiourea as complexing agent is discussed. Zn(S,O) has a larger band gap (E_g = 3·6–3·8 eV) than the conventional buffer material CdS (E_g = 2·4 eV) currently used in chalcopyrite‐based thin films solar cells. Thus, Zn(S,O) is a potential alternative buffer material, which already results in Cd‐free solar cell devices with increased spectral response in the blue wavelength region if low‐gap chalcopyrites are used. Suitable conditions for reproducible deposition of good‐quality Zn(S,O) thin films on wide‐gap CuInS₂ (‘CIS’) absorbers have been identified for an alternative, low‐temperature chemical route. The thickness of the different Zn(S,O) buffers and the coverage of the CIS absorber by those layers as well as their surface composition were controlled by scanning electron microscopy, X‐ray photoelectron spectroscopy, and X‐ray excited Auger electron spectroscopy. The minimum thickness required for a complete coverage of the rough CIS absorber by a Zn(S,O) layer deposited by this CBD process was estimated to ∼15 nm. The high transparency of this Zn(S,O) buffer layer in the short‐wavelength region leads to an increase of ∼1 mA/cm² in the short‐circuit current density of corresponding CIS‐based solar cells. Active area efficiencies exceeding 11·0% (total area: 10·4%) have been achieved for the first time, with an open circuit voltage of 700·4 mV, a fill factor of 65·8% and a short‐circuit current density of 24·5 mA/cm² (total area: 22·5 mA/cm²). These results are comparable to the performance of CdS buffered reference cells. First integrated series interconnected mini‐modules on 5 × 5 cm² substrates have been prepared and already reach an efficiency (active area: 17·2 cm²) of above 8%. Copyright © 2006 John Wiley & Sons, Ltd.     

A cadmium‐free CuInSe2 superstrate solar cell fabricated by electrodeposition using a ITO/In2Se3/CuInSe2/Au structure

A new cadmium free CuInSe₂ (CIS) superstrate cell has been developed. The cell consists of an indium tin oxide (ITO)/indium selenide (In₂Se₃)/CIS/Au structure. Both layers, In₂Se₃ and CIS, have been electrodeposited successively on large areas of 60 cm² of ITO substrates. The pn‐junction has been formed following an annealing treatment under selenium atmosphere at 300°C. X‐ray diffraction was used to characterise the CIS film, photocurrent voltage measurements and spectral responses of the completed cell are shown. A preliminary efficiency of 2·8% has been obtained. Copyright © 1999 John Wiley & Sons, Ltd.     

High‐efficiency (19%) screen‐printed textured cells on low‐resistivity float‐zone silicon with high sheet‐resistance emitters

High‐efficiency 4 cm² screen‐printed (SP) textured cells were fabricated on 100 Ω/sq emitters using a rapid single‐step belt furnace firing process. The high contact quality resulted in a low series resistance of 0·79 Ωcm², high shunt resistance of 48 836 Ωcm², a low junction leakage current of 18·5 nA/cm² (n₂ = 2) yielding a high fill factor (FF) of 0·784 on 100 Ω/sq emitter. A low resistivity (0·6 Ωcm) FZ Si was used for the base to enhance the contribution of the high sheet‐resistance emitter without appreciably sacrificing the bulk lifetime. This resulted in a 19% efficient (confirmed at NREL) SP 4 cm² cell on textured FZ silicon with SP contacts and single‐layer antireflection coating. This is apparently higher in performance than any other previously reported cell using standard screen‐printing approaches (i.e., single‐step firing and grid metallization). Detailed cell characterization and device modeling were performed to extract all the important device parameters of this 19% SP Si cell and provide guidelines for achieving 20% SP Si cells. Copyright © 2005 John Wiley & Sons, Ltd.     

SHORT COMMUNICATION: ACCELERATED PUBLICATION: Diode characteristics in state‐of‐the‐art ZnO/CdS/Cu(In1−xGax)Se2 solar cells

We report a new state of the art in thin‐film polycrystalline Cu(In,Ga)Se₂‐based solar cells with the attainment of energy conversion efficiencies of 19·5%. An analysis of the performance of Cu(In,Ga)Se₂ solar cells in terms of some absorber properties and other derived diode parameters is presented. The analysis reveals that the highest‐performance cells can be associated with absorber bandgap values of ∼1·14 eV, resulting in devices with the lowest values of diode saturation current density (∼3×10⁻⁸ mA/cm²) and diode quality factors in the range 1·30 < A < 1·35. The data presented also support arguments of a reduced space charge region recombination as the reason for the improvement in the performance of such devices. In addition, a discussion is presented regarding the dependence of performance on energy bandgap, with an emphasis on wide‐bandgap Cu(In,Ga)Se₂ materials and views toward improving efficiency to > 1;20% in thin‐film polycrystalline Cu(In,Ga)Se₂ solar cells. Published in 2005 John Wiley & Sons, Ltd.     

A masked process for the industrial production of buried contact solar cells on multi‐crystalline silicon

This paper reports on the development of a masked process for the production of buried contact solar cells on multi‐crystalline silicon. The process results in high efficiencies, and only includes steps that would be feasible in an industrial environment. We report here on different mask candidates and on the importance of hydrogenation with the new process. Using the developed process, we produced 111 large area (12 × 12 cm²) cells and achieved an average cell efficiency of 16·2%. The best cell had an efficiency of 16·9%, a V_oc of 616 mV, a J_sc of 35·0 mA/cm² and a fill factor of 78·3%. Copyright © 2008 John Wiley & Sons, Ltd.     

Development of Nano‐TiO2 dye sensitised solar cells on high mobility transparent conducting oxide thin films

The optical transmission of dye‐sensitised solar cells (DSCs) can be tuned by altering the dye and/or particle size of the mesoporous TiO₂ layers, to allow their application as the top device in tandem solar cells. To benefit from this semi‐transparency, parasitic optical losses by the transparent electrodes must be minimised. This work investigates the influence of using two different transparent conductors, namely, the high mobility material titanium doped indium oxide (ITiO) and fluorine doped tin oxide (FTO) as electrodes for semi‐transparent DSCs. The overall NIR transparency through the DSCs increased significantly as each FTO electrode was replaced by an ITiO electrode. This increase was from 20–45% in the 1300–700 nm wavelength range for fully FTO‐based cells, to about 60% for fully ITiO‐based cells, across the same spectrum. DSCs prepared on these electrodes exhibited short circuit currents ranging from 14·0–14·9 mA/cm². The conversion efficiency of the cell with ITiO as both the front and rear electrodes was 5·8%, which though significant, was lower than the 8·2% attained by the cell using FTO electrodes, as a result of a lower fill factor. Improvements in the ITiO thermal stability and in the processing of the TiO₂ interfacial layer are expected to improve the cell efficiency of such single DSC devices. The high current density and optical transparency of ITiO‐based DSCs make them an interesting option for tandem solar cells. Copyright © 2008 John Wiley & Sons, Ltd.     

Chemical incorporation of copper into indium selenide thin‐films for processing of CuInSe2 solar cells

A chemical method of incorporating copper into indium selenide thin‐films has been investigated, with the goal of creating a precursor structure for conversion into CuInSe₂ (CIS) layers suitable for solar cell processing. The precursor and converted layers have been investigated with scanning electron microscopy (SEM), X‐ray diffraction (XRD), Raman spectroscopy and X‐ray photoelectron spectroscopy (XPS). From these measurements, the incorporation of copper into the indium selenide layers is concluded to proceed by an ion‐exchange reaction. This reaction results in the formation of a precursor layer with a graded compositional depth‐profile containing the crystalline phases In₂Se₃ and Cu_2−xSe. Selenisation of the precursor layer homogenises the composition and forms chalcopyrite CIS. These CIS layers exhibit a dense microstructure with rough surface morphology, which is ascribed to a non‐optimal selenisation process. Solar cells with the structure ZnO: Al/i‐ZnO/CdS/CIS/Mo/glass have been processed from the selenised layers and have exhibited efficiencies of up to 4% under simulated AM1·5 illumination. Copyright © 2008 John Wiley & Sons, Ltd.     

Development of concentrator modules with dome‐shaped Fresnel lenses and triple‐junction concentrator cells

The status of the development of a new concentrator module in Japan is discussed based on three arguments, performance, reliability and cost. We have achieved a 26·6% peak uncorrected efficiency from a 7056 cm² 400 × module with 36 solar cells connected in series, measured in house. The peak uncorrected efficiencies of the same type of the module with 6 solar cells connected in series and 1176 cm² area measured by Fraunhofer ISE and NREL are reported as 27·4% and 24·8% respectively. The peak uncorrected efficiency for a 550× and 5445 cm² module with 20 solar cells connected in series was 28·9% in house. The temperature‐corrected efficiency of the 550 × module under optimal solar irradiation condition was 31·5 ± 1·7%. In terms of performance, the annual power generation is discussed based on a side‐by‐side evaluation against a 14% commercial multicrystalline silicon module. For reliability, some new degradation modes inherent to high concentration III‐V solar cell system are discussed and a 20‐year lifetime under concentrated flux exposure proven. The fail‐safe issues concerning the concentrated sunlight are also discussed. Moreover, the overall scenario for the reduction of material cost is discussed. Copyright © 2005 John Wiley & Sons, Ltd.     

Obtaining a higher Voc in HIT cells

We have achieved a very high conversion efficiency of 21·5% in HIT cells with a size of 100·3 cm². One of the most striking features of the HIT cell is its high open‐circuit voltage V_oc, in excess of 710 mV. This is due to the excellent surface passivation at the a‐Si/c‐Si heterointerface realized by Sanyo's successful technologies for fabricating high‐quality a‐Si films and solar cells with low plasma damage processes. We have studied ways to treat the surface to produce a good interface throughout our fabrication processes. We have also investigated the deposition conditions of a‐Si layers for optimizing the barrier height for the minority carriers in the heterojunction. Our approach for obtaining HIT cells with a high V_oc is reviewed here. Copyright © 2005 John Wiley & Sons, Ltd.     

Fabrication procedures and process sensitivities for CdS/CdTe solar cells

This paper details the laboratory processes used to fabricate CdS/CdTe solar cells at the National Renewable Energy Laboratory. The basic fabrication technique includes low‐pressure chemical vapor deposited SnO₂ , chemical‐bath deposited CdS, close‐spaced sublimated CdTe, solution‐CdCl₂ treatment, and an acid‐contact etch, followed by application of a doped‐graphite paste. This paper also describes the results of a reproducibility study in which cells were produced by multiple operators with an average AM1·5 efficiency of 12·6%. And finally, this paper discusses process sensitivities and alternative cell fabrication procedures and reports the fabrication of a cell with an AM1·5 efficiency of 15·4%. Copyright © 1999 John Wiley & Sons, Ltd.     

Development and experimental evaluation of a complete solar thermophotovoltaic system

We present a practical implementation of a solar thermophotovoltaic (TPV) system. The system presented in this paper comprises a sunlight concentrator system, a cylindrical cup‐shaped absorber/emitter (made of tungsten coated with HfO₂), and an hexagonal‐shaped water‐cooled TPV generator comprising 24 germanium TPV cells, which is surrounding the cylindrical absorber/emitter. This paper focuses on the development of shingled TPV cell arrays, the characterization of the sunlight concentrator system, the estimation of the temperature achieved by the cylindrical emitters operated under concentrated sunlight, and the evaluation of the full system performance under real outdoor irradiance conditions. From the system characterization, we have measured short‐circuit current densities up to 0.95 A/cm², electric power densities of 67 mW/cm², and a global conversion efficiency of about 0.8%. To our knowledge, this is the first overall solar‐to‐electricity efficiency reported for a complete solar thermophotovoltaic system. The very low efficiency is mainly due to the overheating of the cells (up to 120 °C) and to the high optical concentrator losses, which prevent the achievement of the optimum emitter temperature. The loss analysis shows that by improving both aspects, efficiencies above 5% could be achievable in the very short term and efficiencies above 10% could be achieved with further improvements. Copyright © 2012 John Wiley & Sons, Ltd.     

High‐efficiency solar cells on phosphorus gettered multicrystalline silicon substrates

Measurements of the dislocation density are compared with locally resolved measurements of carrier lifetime for p‐type multicrystalline silicon. A correlation between dislocation density and carrier recombination was found: high carrier lifetimes (>100 µs) were only measured in areas with low dislocation density (<10⁵ cm⁻²), in areas of high dislocation density (>10⁶ cm⁻²) relatively low lifetimes (<20 µs) were observed. In order to remove mobile impurities from the silicon, a phosphorus diffusion gettering process was applied. An increase of the carrier lifetime by about a factor of three was observed in lowly dislocated regions whereas in highly dislocated areas no gettering efficiency was observed. To test the effectiveness of the gettering in a solar cell manufacturing process, five different multicrystalline silicon materials from four manufacturers were phosphorus gettered. Base resistivity varied between 0·5 and 5 Ω cm for the boron‐ and gallium‐doped p‐type wafers which were used in this study. The high‐efficiency solar cell structure, which has led to the highest conversion efficiencies of multicrystalline silicon solar cells to date, was used to fabricate numerous solar cells with aperture areas of 1 and 4 cm². Efficiencies in the 20% range were achieved for all materials with an average value of 18%. Best efficiencies for 1 cm² (20·3%) and 4 cm² (19·8%) cells were achieved on 0·6 and 1·5 Ω cm, respectively. This proves that multicrystalline silicon of very different material specification can yield very high efficiencies if an appropriate cell process is applied. Copyright © 2006 John Wiley & Sons, Ltd.     

Laser ablation of SiO2 for locally contacted Si solar cells with ultra‐short pulses

We apply ultra‐short pulse laser ablation to create local contact openings in thermally grown passivating SiO₂ layers. This technique can be used for locally contacting oxide passivated Si solar cells. We use an industrially feasible laser with a pulse duration of τ_pulse ∼ 10 ps. The specific contact resistance that we reach with evaporated aluminium on a 100 Ω/sq and P‐diffused emitter is in the range of 0·3–1 mΩ cm². Ultra‐short pulse laser ablation is sufficiently damage free to abandon wet chemical etching after ablation. We measure an emitter saturation current density of J_0e = (6·2 ± 1·6) × 10⁻¹³ A/cm² on the laser‐treated areas after a selective emitter diffusion with R_sheet ∼ 20 Ω/sq into the ablated area; a value that is as low as that of reference samples that have the SiO₂ layer removed by HF‐etching. Thus, laser ablation of dielectrics with pulse durations of about 10 ps is well suited to fabricate high‐efficiency Si solar cells. Copyright © 2007 John Wiley & Sons, Ltd.     

The effect of Zn1‐xMgxO buffer layer deposition temperature on Cu(In,Ga)Se2 solar cells: A study of the buffer/absorber interface

The effect of atomic layer deposition temperature of Zn_1‐xMg_xO buffer layers for Cu(In,Ga)Se₂ (CIGS) based solar cell devices is evaluated. The Zn_1‐xMg_xO films are grown using diethyl zinc, bis‐cyclopentadienyl magnesium and water as precursors in a temperature range of 105 to 180°C. High efficiency devices are produced in the region from 105 up to 135°C. At a Zn_1‐xMg_xO deposition temperature of 120°C, a maximum cell efficiency of 15·5% is reached by using a Zn_1‐xMg_xO layer with an x‐value of 0·2 and a thickness of 140 nm. A significant drop in cell efficiency due to large losses in open circuit voltage and fill factor is observed for devices grown at temperatures above 150°C. No differences in chemical composition, structure and morphology of the samples are observed, except for the samples prepared at 105 and 120°C that show elemental selenium present at the buffer/absorber interface. The selenium at the interface does not lead to major degradation of the solar cell device efficiency. Instead, a decrease in Zn_1‐xMg_xO resistivity by more than one order of magnitude at growth temperatures above 150°C may explain the degradation in solar cell performance. From energy filtered transmission electron microscopy, the width of the CIGS/Zn_1‐xMg_xO chemical interface is found to be thinner than 10 nm without any areas of depletion for Cu, Se, Zn and O. Copyright © 2008 John Wiley & Sons, Ltd.     

Autodiffusion: a novel method for emitter formation in crystalline silicon thin‐film solar cells

The in situ formation of an emitter in monocrystalline silicon thin‐film solar cells by solid‐state diffusion of dopants from the growth substrate during epitaxy is demonstrated. This approach, that we denote autodiffusion, combines the epitaxy and the diffusion into one single process. Layer‐transfer with porous silicon (PSI process) is used to fabricate n‐type silicon thin‐film solar cells. The cells feature a boron emitter on the cell rear side that is formed by autodiffusion. The sheet resistance of this autodiffused emitter is 330 Ω/□. An independently confirmed conversion efficiency of (14·5 ± 0·4)% with a high short circuit current density of (33·3 ± 0·8) mA/cm² is achieved for a 2 × 2 cm² large cell with a thickness of (24 ± 1) µm. Transferred n‐type silicon thin films made from the same run as the cells show effective carrier lifetimes exceeding 13 µs. From these samples a bulk diffusion length L > 111 µm is deduced. Amorphous silicon is used to passivate the rear surface of these samples after the layer‐transfer resulting in a surface recombination velocity lower than 38 cm/s. Copyright © 2006 John Wiley & Sons, Ltd.     

Efficiency (>15%) for thin‐film epitaxial silicon solar cells on 70 cm2 area offspec silicon substrate using porous silicon segmented mirrors

We report on the beneficial use of embedded segmented porous silicon broad‐band optical reflectors for thin‐film epitaxial silicon solar cells. These reflectors are formed by gradual increase of the spatial period between the layer segments, allowing for an enhanced absorption of low energy photons in the epitaxial layer. By combining these reflectors with well‐established solar cell processing by photolithography, a conversion efficiency of 15·2% was reached on 73 cm² area, highly doped offspec multicrystalline silicon substrates. The corresponding photogenerated current densities (J_sc) were well above 31 mA/cm² for an active layer of only 20 µm. Copyright © 2010 John Wiley & Sons, Ltd.