Thermoelectric and thermomechanical properties of the hot pressed polycrystalline Bi0.5Sb1.5Te3 alloys

The polycrystalline pseudo-binary Bi_0.5Sb_1.5Te₃ alloys have been prepared by hot pressing. X-ray diffraction analysis indicated that there is no noticeable preferred orientation in all the samples. Thermoelectric properties were measured and a relatively high ZT value of ∼0.9 was obtained at room temperature. Thermal mechanical properties were characterized by dilatometer and dynamic-mechanical thermal analyzer. The thermodynamic stability of these alloys could be kept from room temperature to 500 K. It is suggested that Bi_0.5Sb_1.5Te₃ alloys are suitable for the applications below 500 K.     

Piezoelectric and dielectric properties of Dy2O3-doped (Bi0.5Na0.5)0.94Ba0.06TiO3 lead-free ceramics

(Bi_0.5Na_0.5)_0.94Ba_0.06TiO₃ + x wt% Dy₂O₃ with x = 0-0.3 ceramics were synthesized by conventional solid-state processes. The effects of Dy₂O₃ on the microstructure, the piezoelectric and dielectric properties were investigated. X-ray diffraction pattern confirmed that the coexistence of tetragonal and rhombohedral phases in the (Bi_0.5Na_0.5)_0.94Ba_0.06TiO₃ composition was not changed by adding 0.05-0.3 wt% Dy₂O₃. SEM images indicate that all the ceramics have pore-free microstructures with high density, and that doping of Dy₂O₃ inhibits the grain growth of the ceramics. The addition of Dy₂O₃ shows the double effects on decreasing the piezoelectric and dielectric properties for 0 < x < 0.15 when Dy³⁺ ions substitute B-site Ti⁴⁺ ions, and increasing the properties for 0.15 < x < 0.3 when Dy³⁺ ions enters into A-site of the perovskite structure. The optimum electric properties of piezoelectric constant d₃₃ = 170 pC/N and the dielectric constant ?_r = 1900 (at a frequency of 1 kHz) are obtained at x = 0.3.     

Resistivity, thermopower, and thermal conductivity of nickel doped compounds Cr1−xNixSb2 at low temperatures

Substitutional compounds Cr_1−xNi_xSb₂ (0 ≤ x ≤ 0.1) were synthesized, and the effect of Ni substitution on transport and thermoelectric properties of Cr_1−xNi_xSb₂ were investigated at the temperatures from 7 to 310 K. The results indicated that the magnitudes of the resistivity and thermopower of Cr_1−xNi_xSb₂ decreased greatly with increasing Ni content at low temperatures, owing to an increase in electron concentration caused by Ni substitution for Cr. Experiments also showed that the low-temperature lattice thermal conductivity of Cr_1−xNi_xSb₂ decreased substantially with increasing Ni content due to an enhancement of phonon scattering by the increased number of Ni atoms. As a result, the figure of merit, ZT, of lightly doped Cr_0.99Ni_0.01Sb₂ was improved at T > ∼230 K. Specifically, the ZT of Cr_0.99Ni_0.01Sb₂ at 310 K was approximately ∼29% larger than that of CrSb₂, indicating that thermoelectric properties of CrSb₂ can be improved by an appropriate substitution of Ni for Cr.     

Effect of α-Al2O3 on in situ synthesis low density O′-sialon multiphase ceramics

In this paper, the effect of α-Al₂O₃ on in situ synthesis low density O′-sialon multiphase ceramics was investigated. Thermodynamics analysis was used to illustrate the feasibility of synthesizing O′-sialon at a low temperature of 1420 °C. The crystalline phase and microstructure were investigated by X-ray diffraction (XRD) and scanning electron microscope (SEM), respectively. The actual substitution parameter x value of O′-sialon was estimated via lattice correction. The results showed that, O′-sialon multiphase ceramics with different x values could be synthesized successfully through varying α-Al₂O₃ content. Bulk densities of samples ranging from 1.64 to 2.11 g cm⁻³ were adjusted with the percentage of α-Al₂O₃ increasing from 5.21 wt.% to 15.62 wt.%. Formation of nearly single-phase O′-sialon was obtained in the sample containing 10.42 wt.% α-Al₂O₃. The actual substitution parameter x increased with the increase of α-Al₂O₃, whereas it was lower than the original designation, and the O′-sialon with a low x value was achieved.     

Electrical properties of binder-free thick film BaYxBi1−xO3 NTC thermistors

The microstructure and electrical properties of BaY_xBi_1−xO₃ thick film negative temperature coefficient thermistors, fabricated by screen printing, were investigated. The sintered thick films were the single-phase solid solutions of the BaY_xBi_1−xO₃ compounds with a monoclinic structure. The added Y₂O₃ led to a significant decrease in the grain size of the thermistors. The resistivity and coefficient of temperature sensitivity for the BaY_xBi_1−xO₃ (0 ≤ x ≤ 0.15) thick film NTC thermistors decreased first with increasing x in the range of x < 0.04 and then increased with further increase in x.     

Thermoelectric properties of Bi2SexTe3−x prepared by Bridgman method

Bi₂Se_xTe_3−x crystals with various x values were grown by Bridgman method. The electrical conductivity, σ, was found to decrease with increasing Se content. The highest σ of 1.6 × 10⁵ S m⁻¹ at room temperature was reached at x = 0.12 with a growth rate of 0.8 mm h⁻¹. The Seebeck coefficient, S, was less dependent on Se content, all with positive values showing p-type characteristics, and the highest S was measured to be 240 μV K⁻¹ at x = 0.24. The lowest thermal conductivity, κ, was 0.7 W m⁻¹ K⁻¹ at x = 0.36. The electronic part of κ, κ_el, showed a decrease with increasing Se content, which implies that the hole concentration as the main carriers was reduced by the addition of Se. The highest dimensionless figure of merit, ZT, at room temperature was 1.2 at x = 0.36, which is attributed to the combination of a rather high electrical conductivity and Seebeck coefficient and low thermal conductivity.     

Characterization of sol-gel synthesised lead-free (1 − x)Na0.5Bi0.5TiO3-xBaTiO3-based ceramics

The crystal structure, microstructure, dielectric and ferroelectric properties of (1 − x)Na_0.5Bi_0.5TiO₃-xBaTiO₃ ceramics with x = 0, 0.03, 0.05, 0.07 and 0.1 are investigated. A structural variation according to the system composition was investigated by X-ray diffraction (XRD) analyses. The results revealed that the synthesis temperature for pure perovskite phase powder prepared by the present sol-gel process is much lower (800 °C), and a rhombohedral-tetragonal morphotropic phase boundary (MPB) is found for x = 0.07 composition which showing the highest remanent polarization value and the smallest coercive field. The optimum dielectric and piezoelectric properties were found with the 0.93Na_0.5Bi_0.5TiO₃-0.07BaTiO₃ composition. The piezoelectric constant d₃₃ is 120 pC/N and good polarization behaviour was observed with remanent polarization (P_r) of 12.18 pC/cm², coercive field (E_c) of 2.11 kV/mm, and enhanced dielectric properties ?_r > 1500 at room temperature. The 0.93Na_0.5Bi_0.5TiO₃-0.07BaTiO₃-based ceramic is a promising lead-free piezoelectric candidate for applications in different devices.     

Thermoelectric properties of Cu1−xPtxFeO2 (0.0 ≤ x ≤ 0.05) delafossite-type transition oxide

The samples of Cu_1−xPt_xFeO₂ (0 ≤ x ≤ 0.05) delafossite were synthesized by solid state reaction method for studying thermoelectric properties. The properties of Seebeck coefficient, electrical conductivity and thermal conductivity were measured in the high temperature ranging from 300 to 960 K. The results of Seebeck coefficient, electrical conductivity and power factor were increased with increasing Pt substitution and temperature. The thermal conductivity was decreased from 5.8 to 3.5 W/mK with increasing the temperature from 300 to 960 K. An important results, the highest value of power factor and ZT is 2.0 × 10⁻⁴ W/mK² and 0.05, respectively, for x = 0.05 at 960 K.     

Effect of lanthanum doping on linear and nonlinear-optical properties of Bi3TiNbO9 thin films

Lanthanum doped Bi₃TiNbO₉ thin films (LBTN-x, La³⁺ contents x = 5%, 15%, 25% and 35 mol.%) with layered perovskite structure were fabricated on fused silica by pulsed laser deposition method. Their linear and nonlinear optical properties were studied by transmittance measurement and Z-Scan method. All films exhibit good transmittance (>55%) in visible region. For lanthanum doping content are x = 5%, 15% and 25 mol.%, the nonlinear absorption coefficient of LBTN-x thin films increases with the La³⁺ content, then it drops down at x = 35 mol.% when the content of La³⁺ in (Bi₂O₂)²⁺ layers is high enough to aggravate the orthorhombic distortion of the octahedra. We found that, 25 mol.% is the optimal La³⁺ content for LBTN-x thin films to have the largest nonlinear absorption coefficient making the LBTN-x film a promising candidate for absorbing-type optical device applications.     

Magnetic properties of Al2O3-Cr2O3 solid solutions

Solid solution ceramics (Al₂O₃)_x(Cr₂O₃)_1−x with different x in the range of 0 < x < 1 were synthesized via traditional ceramic production method. X-ray diffraction results and Rietveld refinements indicated that all samples possessed rhomb-centered structure and continuous solid solutions were synthesized. The samples were composed of irregular grains with several micrometers in diameter. Temperature dependence of magnetization measurements showed monotonous decreasing Néel temperature with increasing x and percolation effect happened with threshold of x = 0.65. As x became higher, weak ferromagnetism was observed in the samples. Field dependence of magnetization measurements further confirmed the weak ferromagnetism in the samples with x = 0.7, 0.8 and 0.9.     

Power factor enhancement in Zn-doped Na0.8CoO2

The thermoelectric properties of Na_0.8Zn_xCo_1−xO₂/(ZnO)_y (x ≤ 0.01, 0 ≤ y ≤ 0.14) have been systematically investigated. The results suggest that doping divalent Zn ions within solubility limit x^* ∼ 0.01 leads to simultaneous reduction in resistivity and enhancement of thermopower. Analysis of the results show that the reduction of resistivity may be attributed to improved mobility of carriers, while the enhancement of thermopower may originate from the geometric relaxation of distorted CoO₆ octahedra caused by partial Zn substitution, leading to a narrower band width in the strongly correlated environment, consequently resulting in a remarkable 20% improvement in power factor.     

Effect of Ag-doping on crystal structure and high temperature thermoelectric properties of c-axis oriented Ca3Co4O9 thin films by pulsed laser deposition

Ag-doped Ca₃Co₄O₉ thin films with nominal composition of Ca_3−xAg_xCo₄O₉ (x = 0∼0.4) have been prepared on sapphire (0 0 0 1) substrates by pulsed laser deposition (PLD). Structural characterizations and surface chemical states analysis have shown that Ag substitution for Ca in the thin films can be achieved with doping amount of x ≤ 0.15; while x > 0.15, excessive Ag was found as isolated and metallic species, resulting in composite structure. Based on the perfect c-axis orientation of the thin films, Ag-doping has been found to facilitate a remarkable decrease in the in-plane electrical resistivity. However, if doped beyond the substitution limit, excessive Ag was observed to severely reduce the Seebeck coefficient. Through carrier concentration adjustment by Ag-substitution, power factor of the Ag-Ca₃Co₄O₉ thin films could reach 0.73 mW m⁻¹ K⁻² at around 700 K, which was about 16% higher than that of the pure Ca₃Co₄O₉ thin film.     

Thermoelectric properties of p-type Pb-doped Bi85Sb15−xPbx alloys at cryogenic temperatures

In this study we have investigated the effect of the Pb on the thermoelectric propertied of Bi-Sb alloy with different Pb-content. The Pb-doped Bi₈₅Sb_15−xPb_x (x = 0, 0.5, 1, 2, 3) alloys were synthesized by mechanical alloying followed by pressureless sintering. The crystal structure was characterized by X-ray diffraction. The Seebeck coefficients, electrical conductivities, and thermal conductivities were measured in the temperature range of 77-300 K. The results show that all the Pb-doped alloys are p-type thermoelectric materials in the whole measurement temperature range. A minimum thermal conductivity of 1.7 W/mK was obtained for Bi₈₅Sb₁₂Pb₃ sample at 150 K. A maximum ZT value of 0.11, which is higher than those previous reported, was obtained for Bi₈₅Sb₁₄Pb₁ at 210 K.     

Preparation, structure and electrical conductivity of the pyrochlore-type phase Sm2Zr2O7 codoped with bivalent magnesium and trivalent dysprosium cations

The pyrochlore-type phases with the compositions of SmDy_1−xMg_xZr₂O_7−x/2 (0 ≤ x ≤ 0.20) have been prepared by pressureless-sintering method for the first time as possible solid electrolytes. The structure and electrical conductivity of SmDy_1−xMg_xZr₂O_7−x/2 ceramics have been studied by the X-ray diffraction (XRD), scanning electron microscopy (SEM) and impedance spectroscopy measurements. SmDy_1−xMg_xZr₂O_7−x/2 (x = 0, 0.05, 0.10) ceramics exhibit a single phase of pyrochlore-type structure, and SmDy_1−xMg_xZr₂O_7−x/2 (x = 0.15, 0.20) ceramics consist of pyrochlore phase and a small amount of the second phase magnesia. The total conductivity of SmDy_1−xMg_xZr₂O_7−x/2 ceramics obeys the Arrhenius relation, and the total conductivity of each composition increases with increasing temperature from 673 to 1173 K. SmDy_1−xMg_xZr₂O_7−x/2 ceramics are oxide-ion conductors in the oxygen partial pressure range of 1.0 × 10⁻⁴ to 1.0 atm at all test temperature levels. The highest total conductivity value is about 8 × 10⁻³ S cm⁻¹ at 1173 K for SmDy_1−xMg_xZr₂O_7−x/2 ceramics.     

Synthesis and thermal conductivities of ZnIn2Te4 and CdIn2Te4 with defect-chalcopyrite structure

ZnIn₂Te₄ and CdIn₂Te₄ have a defect-chalcopyrite tetragonal crystal structure with structural vacancies. In order to investigate the effects of vacancies on the lattice thermal conductivity (κ_lat), single phase samples of ZnIn₂Te₄ and CdIn₂Te₄ were synthesized and their κ_lat values were examined in the temperature range from room temperature to 850 K. The κ_lat data for ZnIn₂Te₄ and CdIn₂Te₄ were compared with those of Zn- and Cd-series chalcopyrite compounds with no vacancies. The results revealed that the presence of vacancies alone in the defect-chalcopyrite structure does not result in effective phonon scattering.     

Structural and dielectric properties of Bi2Zn2/3Nb4/3O7 thin films prepared by pulsed laser deposition at low temperature for embedded capacitor applications

Bi₂Zn_2/3Nb_4/3O₇ thin films were deposited on Pt/TiO₂/SiO₂/Si(1 0 0) substrates at a room temperature under the oxygen pressure of 1-10 Pa by pulsed laser deposition. Bi₂Zn_2/3Nb_4/3O₇ thin films were then post-annealed below 200 °C in a rapid thermal process furnace in air for 20 min. The dielectric and leakage current properties of Bi₂Zn_2/3Nb_4/3O₇ thin films are strongly influenced by the oxygen pressure during deposition and the post-annealing temperature. Bi₂Zn_2/3Nb_4/3O₇ thin films deposited under 1 Pa oxygen pressure and then post-annealed at a temperature of 150 °C show uniform surface morphologies. Dielectric constant and loss tangent are 57 and 0.005 at 10 kHz, respectively. The high resolution TEM image and the electron diffraction pattern show that nano crystallites exist in the amorphous thin film, which may be the origin of high dielectric constant in the Bi₂Zn_2/3Nb_4/3O₇ thin films deposited at low temperatures. Moreover, Bi₂Zn_2/3Nb_4/3O₇ thin film exhibits the excellent leakage current characteristics with a high breakdown strength and the leakage current density is approximately 1 × 10⁻⁷ A/cm² at an applied bias field of 300 kV/cm. Bi₂Zn_2/3Nb_4/3O₇ thin films are potential materials for embedded capacitor applications.     

Preparation and characteristics of Fe3O4@YVO4:Eu bifunctional magnetic-luminescent nanocomposites

A facile direct precipitation method has been developed for the synthesis of bifunctional magnetic-luminescent nanocomposites with Fe₃O₄ nanoparticles as the core and YVO₄:Eu³⁺ as the shell. Transmission electron microscopy (TEM) images revealed that the obtained bifunctional nanocomposites had a core-shell structure and a spherical morphology. The average size was ∼150 nm, and the thickness of the shell was ∼15 nm. The X-ray diffraction (XRD) patterns showed that a cubic spinel structure of Fe₃O₄ core and a tetragonal phase of YVO₄ shell were obtained. Fourier transform infrared (FT-IR) spectra confirmed that the YVO₄:Eu³⁺ had been successfully deposited on the surface of Fe₃O₄ nanoparticles. Photoluminescence (PL) spectra indicated that the nanocomposites displayed a strong red characteristic emission of Eu³⁺. Magnetic measurements showed that the obtained bifunctional nanocomposites exhibited superparamagnetic behavior at room temperature. Therefore, the bifunctional nanocomposites are expected to develop many potential applications in biomedical fields.     

Modification of TiO2 nanorods by Bi2MoO6 nanoparticles for high performance visible-light photocatalysis

In this work, TiO₂ nanorods were prepared by a hydrothermal process and then Bi₂MoO₆ nanoparticles were deposited onto the TiO₂ nanorods by a solvothermal process. The nanostructured Bi₂MoO₆/TiO₂ composites were extensively characterized by X-ray diffraction, scanning and transmission electron microscopy, X-ray photoelectron spectroscopy and UV-vis diffuse reflectance spectroscopy. The photocatalytic activity of the Bi₂MoO₆/TiO₂ composites was evaluated by degradation of methylene blue. The Bi₂MoO₆/TiO₂ composites exhibit higher catalytic activity than pure Bi₂MoO₆ and TiO₂ for degradation of methylene blue under visible light irradiation (λ > 420 nm). Further investigation revealed that the ratio of Bi₂MoO₆ to TiO₂ in the composites greatly influenced their photocatalytic activity. The experimental results indicated that the composite with Bi₂MoO₆:TiO₂ = 1:3 exhibited the highest photocatalytic activity. The enhancement mechanism of the composite catalysts was also discussed.     

Phase range and physical properties of the thallium tin tellurides Tl10−xSnxTe6 (x ≤ 2.2)

Crystal structures and physical property measurements were determined for Tl_10−xSn_xTe₆ with a phase range of 0 ≤ x ≤ 2.2. These tellurides are substitution variants of Tl₅Te₃. Electronic structure calculations indicate that Tl₈Sn₂Te₆ should be an intrinsic semiconductor, and the Sn-poor variants, extrinsic ones with p-type conduction. The positive Seebeck values increase with increasing Sn content, while the electrical and thermal conductivity values decrease. Low thermal conductivity values, well below 1 W m⁻¹ K⁻¹, are the best asset of these materials with respect to thermoelectric performance. At x = 2.2, the best thermoelectric properties were obtained, with a figure-of-merit ZT = 0.60 at 617 K as determined on sintered cold-pressed pellets.