35-dB gain Tm-doped ZBLYAN fiber amplifier operating at 1.65 /spl mu/m

We demonstrate the first high gain rare-earth-doped fiber amplifier operating at 1.65 /spl mu/m. It consists of ZBLYAN fiber with a Tm/sup 3+/-doped core and Tb/sup 3+/-doped cladding, pumped by 1.22 /spl mu/m laser diodes. It is possible to achieve efficient amplification with Tm/sup 3+/ ions if their amplified spontaneous emission (ASE) in the 1.75 to 2.0 /spl mu/m wavelength region is suppressed by doping Tb/sup 3+/ ions in the cladding. A two-stage-type fiber amplifier is constructed and a signal gain of 35 dB is achieved for a pump power of 140 mW. A gain over 25 dB is realized in the 1.65 /spl mu/m to 1.67 /spl mu/m wavelength region.     

220-GHz metamorphic HEMT amplifier MMICs for high-resolution imaging applications

In this paper, the development of 220-GHz low-noise amplifier (LNA) MMICs for use in high-resolution active and passive millimeter-wave imaging systems is presented. The amplifier circuits have been realized using a well-proven 0.1-/spl mu/m gate length and an advanced 0.05-/spl mu/m gate length InAlAs/InGaAs based depletion-type metamorphic high electron mobility transistor technology. Furthermore, coplanar circuit topology in combination with cascode transistors was applied, leading to a compact chip size and an excellent gain performance at high millimeter-wave frequencies. A realized single-stage 0.05-/spl mu/m cascode LNA exhibited a small-signal gain of 10 dB at 222 GHz, while a 0.1-/spl mu/m four-stage amplifier circuit achieved a linear gain of 20 dB at the frequency of operation and more than 10 dB over the bandwidth from 180 to 225 GHz.     

A 95-dB linear low-power variable gain amplifier

An all-CMOS variable gain amplifier (VGA) that adopts a new approximated exponential equation is presented. The proposed VGA is characterized by a wide range of gain variation, temperature-independence gain characteristic, low-power consumption, small chip size, and controllable dynamic gain range. The two-stage VGA is fabricated in 0.18-/spl mu/m CMOS technology and shows the maximum gain variation of more than 95 dB and a 90-dB linear range with linearity error of less than /spl plusmn/ 1 dB. The range of gain variation can be controlled from 68 to 95 dB. The P1dB varies from - 48 to - 17 dBm, and the 3-dB bandwidth is from 32 MHz (at maximum gain of 43 dB) to 1.05 GHz (at minimum gain of - 52 dB). The VGA dissipates less than 3.6 mA from 1.8-V supply while occupying 0.4 mm/sup 2/ of chip area excluding bondpads.     

A 75-dB image rejection IF-input quadrature-sampling SC /spl Sigma//spl Delta/ Modulator

Quadrature sampling of intermediate frequency (IF) signals is subject to the well-known problem of gain and phase mismatches between the in-phase (I) and quadrature (Q) channels. This paper presents an IF-input quadrature-sampling switched-capacitor (SC) /spl Sigma//spl Delta/ modulator that circumvents the I/Q mismatch problem by time-sharing between the I and Q channels the critical circuit components, namely, the sampling capacitor and the capacitor of the first-stage feedback digital-to-analog converter (DAC). In addition, a clocking scheme that is insensitive to I/Q phase imbalance is used. A third-order single-loop 1-bit low-pass modulator has been designed and fabricated in a 0.35-/spl mu/m CMOS process with an active area of 0.57mm/sup 2/. The experimental results show that the modulator achieves an image-rejection ratio (IRR) of greater than 75dB throughout a 200-kHz signal bandwidth.     

A programmable gain/loss circuit

A general-purpose gain/loss circuit is described. Its function is controlled by an 8-b digital word. It provides up to 256 0.1-dB steps in gain or loss. The circuit has two modes of incremental gain/loss steps (two sets of gain/loss values for bits in the control word). A ninth bit selects between gain and loss. The IC has three digital interfaces: serial, parallel clocked input, and parallel fixed input. The chip is fabricated in a 3-/spl mu/m CMOS n-well process. It requires a /spl plusmn/5-V power supply, and for maximum gain of 25.5 dB, the 0.1-dB large-signal bandwidth is 260 kHz.     

A realization of a below-1-V operational and 30-MS/s sample-and-hold IC with a 56-dB signal-to-noise ratio by applying the current-based circuit approach

This paper demonstrates the low-voltage and low-power operation of a MOS sample-and-hold circuit while preserving speed and accuracy, aiming at the realization of a pipelined low-voltage and low-power analog-to-digital converter on a system large-scale integrated circuit. It was fabricated by utilizing 0.35-/spl mu/m CMOS technology. The main feature of this circuit is that all the input, signals, and output are in the current form. The circuit consists of simple current mirrors. In order to eliminate the signal-dependent current transfer ratio error, voltages at the drain terminals of mirror transistors are fixed as constant. A source degeneration resistor, which is a transistor in the triode operational region, is connected to a mirror transistor in order to alleviate the influence of the threshold and transconductance parameter variations. Control signals are boosted in voltage and applied to the gate of switch NMOS transistors in the signal path in order to reduce the on-resistance of analog switches. A differential configuration is adopted throughout the entire circuit and effectively cancels switch feedthrough errors. As a result, a 30-MS/s operation with a signal-to-noise ratio (SNR) of 56 dB from a 1-V supply has been achieved, when the input current is /spl plusmn/200 /spl mu/A. The chip even operated down to 0.85 V with a 20-MHz clock. The SNR was measured as 50 dB with an input current of /spl plusmn/100 /spl mu/A.     

Wide-band, low-noise, matched-impedance amplifiers in submicrometer MOS technology

Circuit design techniques for realizing wideband, low-noise, matched-impedance amplifiers in submicrometer MOS technology are discussed. A circuit configuration with two feedback loops has been fabricated in an experimental 1-/spl mu/m NMOS technology. The fabricated amplifier has an insertion gain of 16.35 dB, a -3-dB bandwidth of 758 MHz, a maximum input voltage standing-wave ratio (VSWR) of 2.45, a maximum output VSWR of 1.60, and an average noise figure of 6.7 dB (with reference to a 50-/spl mu/m source resistance) from 10 to 758 MHz.     

Low-power fully integrated and tunable CMOS RF wireless receiver for ISM band consumer applications

A 0.25-/spl mu/m single-chip CMOS single-conversion tunable low intermediate frequency (IF) receiver operated in the 902-928-MHz industrial, scientific, and medical band is proposed. A new 10.7-MHz IF section that contains a limiting amplifier and a frequency modulated/frequency-shift-key demodulator is designed. The frequency to voltage conversion gain of the demodulator is 15 mV/kHz and the dynamic range of the limiting amplifier is around 80 dB. The sensitivity of the IF section including the demodulator and limiting amplifier is -72 dBm. With on-chip tunable components in the low-power low-noise amplifier (LNA) and LC-tank voltage-controlled oscillator circuit, the receiver measures an RF gain of 15 dB at 915 MHz, a sensitivity of -80 dBm at 0.1% bit-error rate, an input referred third-order intercept point of -9 dBm, and a noise figure of 5 dB with a current consumption of 33 mA and a 2450 /spl mu/m/spl times/ 2450 /spl mu/m chip area.     

A 1.2 mW RDS receiver for portable applications

A 0.9 V 1.2 mA fully integrated radio data system (RDS) receiver for the 88-108 MHz FM broadcasting band is presented. Requiring only a few external components (matching network, VCO inductors, loop filter components), the receiver, which has been integrated in a standard digital 0.18 /spl mu/m CMOS technology, achieves a noise figure of 5 dB and a sensitivity of -86dBm. The circuit can be configured and the RDS data retrieved via an I/sup 2/C interface so that it can very simply be used as a peripheral in any portable application. A 250 kHz low-IF architecture has been devised to minimize the power dissipation of the baseband filters and FM demodulator. The frequency synthesizer consumes 250 /spl mu/A, the RF front-end 450 /spl mu/A while providing 40 dB of gain, the baseband filter and limiters 100 /spl mu/A, and the FM and BPSK analog demodulators 300 /spl mu/A. The chip area is 3.6 mm/sup 2/.     

Gain-flattened Er/sup 3+/-doped fiber amplifier for a WDM signal in the 1.57-1.60-/spl mu/m wavelength region

A gain-flattened Er/sup 3+/-doped silica-based fiber amplifier (EDFA) has been constructed for a 1.58-/spl mu/m band WDM signal. This EDFA exhibits uniform amplification characteristics with a gain excursion of 0.9 dB for a four-channel WDM signal in the 1.57-1.60 /spl mu/m wavelength region. The average signal gain and the noise figure for the WDM signal are 29.5 dB and less than 6.3 dB, respectively. The use of this EDFA in parallel with a 1.55-/spl mu/m band EDFA will expand the WDM transmission wavelength region.     

A 60-dB 246-MHz CMOS variable gain amplifier for subsampling GSM receivers

A variable gain amplifier (VGA) is designed for a GSM subsampling receiver. The VGA is implemented in a 0.35-/spl mu/m CMOS process and approximately occupies 0.64 mm/sup 2/. It operates at an IF frequency of 246 MHz. The VGA provides a 60-dB digitally controlled gain range in 2-dB steps. The overall gain accuracy is less than 0.3 dB. The current is 9 mA at 3 V supply. The noise figure at maximum gain is 8.7 dB. The IIP3 is -4 dBm at minimum gain, while the OIP3 is -1 dBm at maximum gain. The group delay is 1.5 ns across 5-MHz bandwidth.     

A sensitivity and linearity improvement of a 100-dB dynamic range CMOS image sensor using a lateral overflow integration capacitor

In a CMOS image sensor featuring a lateral overflow integration capacitor in a pixel, which integrates the overflowed charges from a fully depleted photodiode during the same exposure, the sensitivity in nonsaturated signal and the linearity in saturated overflow signal have been improved by introducing a new pixel circuit and its operation. The floating diffusion capacitance of the CMOS image sensor is as small as that of a four transistors type CMOS image sensor because the lateral overflow integration capacitor is located next to the reset switch. A 1/3-inch VGA format (640/sup H//spl times/480/sup V/ pixels), 7.5/spl times/7.5 /spl mu/m/sup 2/ pixel color CMOS image sensor fabricated through 0.35-/spl mu/m two-poly three-metal CMOS process results in a 100 dB dynamic range characteristic, with improved sensitivity and linearity.     

A 0.9-V 12-mW 5-MSPS algorithmic ADC with 77-dB SFDR

An ultra-low-voltage CMOS two-stage algorithm ADC featuring high SFDR and efficient background calibration is presented. The adopted low-voltage circuit technique achieves high-accuracy high-speed clocking without the use of clock boosting or bootstrapping. A resistor-based input sampling branch demonstrates high linearity and inherent low-voltage operation. The proposed background calibration accounts for capacitor mismatches and finite opamp gain error in the MDAC stages via a novel digital correlation scheme involving a two-channel ADC architecture. The prototype ADC, fabricated in a 0.18 /spl mu/m CMOS process, achieves 77-dB SFDR at 0.9 V and 5MSPS (30 MHz clocking) after calibration. The measured SNR, SNDR, DNL, and INL at 80 kHz input are 50 dB, 50 dB, 0.6 LSB, and 1.4 LSB, respectively. The total power consumption is 12 mW, and the active die area is 1.4 mm/sup 2/.     

High-dynamic-range VGA with temperature compensation and linear-in-dB gain control

This paper presents the design and measured performance of a novel intermediate-frequency variable-gain amplifier for Wideband Code-Division Multiple Access (WCDMA) transmitters. A compensation technique for parasitic coupling is proposed which allows a high dynamic range of 77 dB to be attained at 400 MHz while using a single variable-gain stage. Temperature compensation and decibel-linear characteristic are achieved by means of a control circuit which provides a lower than /spl plusmn/1.5 dB gain error over full temperature and gain ranges. The device is fabricated in a 0.8-/spl mu/m 46 GHz f/sub T/ silicon bipolar technology and drains up to 6 mA from a 2.7-V power supply.     

A 3.3-mW /spl Sigma//spl Delta/ modulator for UMTS in 0.18-/spl mu/m CMOS with 70-dB dynamic range in 2-MHz bandwidth

A quadrature fourth-order, continuous-time, /spl Sigma//spl Delta/ modulator with 1.5-b quantizer and feedback digital-to-analog converter (DAC) for a universal mobile telecommunication system (UMTS) receiver chain is presented. It achieves a dynamic range of 70 dB in a 2-MHz bandwidth and the total harmonic distortion is -74 dB at full-scale input. When used in an integrated receiver for UMTS, the dynamic range of the modulator substantially reduces the need for analog automatic gain control and its tolerance of large out-of-band interference also permits the use of only first-order prefiltering. An IC including an I and Q /spl Sigma//spl Delta/ modulator, phase-locked loop, oscillator, and bandgap dissipates 11.5 mW at 1.8 V. The active area is 0.41 mm/sup 2/ in a 0.18-/spl mu/m 1-poly 5-metal CMOS technology.     

A novel CMOS low-noise amplifier design for 3.1- to 10.6-GHz ultra-wide-band wireless receivers

An ultra-wideband (UWB) 3.1- to 10.6-GHz low-noise amplifier (LNA) employing a common-gate stage for wideband input matching is presented in this paper. Designed in a commercial 0.18-/spl mu/m 1.8-V standard RFCMOS technology, the proposed UWB LNA achieves fully on-chip circuit implementation, contributing to the realization of a single-chip CMOS UWB receiver. The proposed UWB LNA achieves 16.7/spl plusmn/0.8 dB power gain with a good input match (S11<-9 dB) over the 7500-MHz bandwidth (from 3.1 GHz to 10.6 GHz), and an average noise figure of 4.0 dB, while drawing 18.4-mA dc biasing current from the 1.8-V power supply. A gain control mechanism is also introduced for the first time in the proposed design by varying the biasing current of the gain stage without influencing the other figures of merit of the circuit so as to accommodate the UWB LNA in various UWB wireless transmission systems with different link budgets.     

A 64-MHz clock-rate /spl Sigma//spl Delta/ ADC with 88-dB SNDR and -105-dB IM3 distortion at a 1.5-MHz signal frequency

A 64-MHz clock rate sigma-delta (/spl Sigma//spl Delta/) analog-to-digital converter (ADC) with -105-dB intermodulation distortion (IMD) at a 1.5-MHz signal frequency is reported. A linear replica bridge sampling network enables the ADC to achieve high linearity for high signal frequencies. Operating at an oversampling ratio of 29, a 2-1-1 cascade with a 2-b quantizer in the last stage reduces the quantization noise level well below that of the thermal noise. The measured signal-to-noise and distortion ratio (SNDR) in 1.1-MHz bandwidth is 88 dB, and the spurious-free-dynamic-range (SFDR) is 106 dB. The modulator and reference buffers occupy a 2.6-mm/sup 2/ die area and have been implemented with thick oxide devices, with minimum channel length of 0.35 /spl mu/m, in a dual-gate 0.18-/spl mu/m 1.8-V single-poly five-metal (SP5M) digital CMOS process. The power consumed by the ADC is 230 mW, including the decimation filters.     

A CMOS V-I converter with 75-dB SFDR and 360-/spl mu/W power consumption

This work describes a method for analysis of voltage-to-current converters (V-I converters or transconductors) and a novel V- I converter circuit with significantly improved linearity. The new circuit utilizes a combination of cross-coupling and local resistive feedback for a significant, simultaneous suppression of the third- and fifth-order harmonic distortion components in the transconductor characteristics. An evaluation of the optimal circuit dimensioning is shown. Simple and robust design rules are derived for the chosen operation conditions. The transistor implementation is presented and a prototype V- I converter is realized in a digital 0.18-/spl mu/m CMOS technology. The measured spurious-free dynamic range is 75 dB in a frequency band of 10 MHz. The circuit occupies less than 0.02 mm/sup 2/ and dissipates 360 /spl mu/W.     

Efficient PDFA module using high-NA PbF/sub 2//InF/sub 3/-based fluoride fiber

The highest reported single-pass gain coefficient of 0.36 dB/mW has been achieved using a newly developed Pr/sup 3+/-doped high-NA PbF/sub 2//InF/sub 3/-based fluoride fiber, with a /spl Delta/n of 6.6%, a core diameter of 1.2 /spl mu/m and a transmission loss of 250 dB/km at 1.2 /spl mu/m. This fiber was used to construct an efficient PDFA module with a MOPA-LD. A small-signal net gain of 22.5 dB was achieved at 1.30 /spl mu/m with a pump power of 23m mW.     

Self-heating and trapping effects on the RF performance of GaN MESFETs

RF power performances of GaN MESFETs incorporating self-heating and trapping effects are reported. A physics-based large-signal model is used, which includes temperature dependences of transport and trapping parameters. Current collapse and dc-to-RF dispersion of output resistance and transconductance due to traps have been accounted for in the formulation. Calculated dc and pulsed I-V characteristics are in excellent agreement with the measured data. At 2 GHz, calculated maximum output power of a 0.3 /spl mu/m/spl times/100 /spl mu/m GaN MESFET is 22.8 dBm at the power gain of 6.1 dB and power-added efficiency of 28.5% are in excellent agreement with the corresponding measured values of 23 dBm, 5.8 dB, and 27.5%, respectively. Better thermal stability is observed for longer gate-length devices due to lower dissipation power density. At 2 GHz, gain compressions due to self-heating are 2.2, 1.9, and 0.75 dB for 0.30 /spl mu/m/spl times/100 /spl mu/m, 0.50 /spl mu/m/spl times/100 /spl mu/m, and 0.75 /spl mu/m/spl times/100 /spl mu/m GaN MESFETs, respectively. Significant increase in gain compression due to thermal effects is reported at elevated frequencies. At 2-GHz and 10-dBm output power, calculated third-order intermodulations (IM3s) of 0.30 /spl mu/m/spl times/100 /spl mu/m, 0.50 /spl mu/m/spl times/100 /spl mu/m, and 0.75 /spl mu/m/spl times/100 /spl mu/m GaN MESFETs are -61, -54, and - 45 dBc, respectively. For the same devices, the IM3 increases by 9, 6, and 3 dBc due to self-heating effects, respectively. Due to self-heating effects, the output referred third-order intercept point decreases by 4 dBm in a 0.30 /spl mu/m/spl times/100 /spl mu/m device.