Electrical transport properties of amorphous Se78−x Te22Bi x films

D.C. Conductivity measurements on the thin films of a-Se_78–x Te₂₂Bi _x system (where x = 0, 0.5, 2 and 4) are reported in the temperature range 213–390 K and the density of states (DOS) near the Fermi level is calculated using dc conductivity data. It is found that the conduction in all the samples takes place in the tails of localized states. The conduction in the high temperature region 296–390 K is due to thermally assisted tunneling of electrons in the localized states at the conduction band edge. In the low temperature region 213–296 K conduction takes place through variable range hopping in the localized states near the Fermi level.     

Estimation of Mott parameters in amorphous Se80Te20 and Se80Te10M10 (Cd, In, Sb) alloys

In the present communication, d.c. conductivity of a-Se₈₀Te₂₀ and a-Se₈₀Te₁₀M₁₀ (M = Cd, In, Sb) alloys has been studied in the temperature range 225–311 K in order to identify the conduction mechanism and to analyze the effect of different metallic additives on d.c. conduction in a-Se₈₀Te₂₀ alloy below the room temperature. An analysis of the experimental data confirms that conduction in low temperature region is due to variable range hopping in localized states near the Fermi level. The Mott parameters have been calculated in a-Se₈₀Te₂₀ and a-Se₈₀Te₁₀M₁₀ (M = Cd, In, Sb) alloys. The experimental data is found to fit well with Mott condition of variable range hopping conduction.     

Optical, electrical and thermal studies on (As2Se3)3−x(As2Te3)x glasses

Optical properties and conductivity of glassy (As₂Se₃)_3−x(As₂Te₃)_x were studied for 0 ≤ x ≤ 3. The films of the above mentioned compound were prepared by thermal evaporation with thickness of about 250 nm. The optical-absorption edge is described and calculated using the non-direct transition model and the optical band gap is found to be in the range of 0.92 to 1.84 eV. While, the width of the band gap tail exhibits opposite behaviour and is found to be in the range of 0.157 to 0.061 eV, this behaviour is believed to be associated with cohesive energy and average coordination number. The conductivity measurement on the thin films is reported in the temperature range from 280 to 190 K. The conduction that occurs in this low-temperature range is due to variable range hopping in the band tails of localized states, which is in reasonable agreement with Mott's condition of variable range hopping conduction. Some parameters such as coordination number, molar volume and theoretical glass transition temperature were calculated and discussed in the light of the topological bonding structure.     

Substrate and annealing temperature effects on the optical and electrical properties of Ge20Te80 films

Ge₂₀Te₈₀ films were deposited by thermal evaporation technique onto chemically cleaned glass substrates kept at different substrate temperatures (T_sub=203, 233 and 273 K). The optical data indicated that the width of the localized states tails (E_e) increases while the optical gap (E_o) decreases with increasing the substrate and annealing temperature of the investigated films. From the electrical measurements, the activation energy for conduction and the density of localized states at the Fermi energy, N(E_F), were obtained. The effects of the substrate and annealing temperature on the width of localized states tails and on the density of localized states at the Fermi level have enhanced each other. The changes in the optical and electrical properties are correlated with the amorphous-crystalline transformations.     

Effect of thermal annealing on some electrical properties and optical band gap of vacuum evaporated Se65Ga30In5 thin films

Electrical properties and optical band gap of amorphous Se₆₅Ga₃₀In₅ thin films, which were thermally evaporated onto chemically cleaned glass substrates, have been studied before and after thermal annealing at temperatures above the glass transition temperature and below the crystallization temperature. The I-V characteristics, which were recorded in the temperature range (200-300 K), were obtained at different voltages and exhibit an ohmic and non-ohmic behavior at low (0-5 V) and high (5-18 V) voltages, respectively, for annealed and as-prepared films. Analysis of the experimental data in the high voltage range confirms the presence of space charge limited conduction (SCLC) for annealed and as-prepared films. The dependence of DC conductivity on temperature in the low voltage region shows two types of conduction channels: The first is in the range 270-300 K and the other at the lower temperature range (200-270 K). The conduction in the first region is due to thermally activated process, while in the other is due variable range hopping (VRH) of charge carriers in the band tails of the localized states. After annealing, the conductivity has been found to increase but the activation energy decreases. This is attributed to rupturing of Se-In weak bonds and formation of Se-Ga strong bonds. This process changes the concentration of defects in the films which in turn decreases the density of states N(E_F) as predicted by Mott's VRH model. Analysis of the absorption coefficient of annealed and as-prepared films, in the wavelength range 300-700 nm, reveals the presence of parabolic densities of states at the edges of both valence and conduction bands in the studied films. The optical band gap (E_g) was obtained through the use of Tauc's relation and is found to decrease with annealing temperature.     

Mixed cation effect in xR2O-(40 − x)Na2O-50B2O3-10Bi2O3 (R = Li, K) glasses

Mass density, glass transition temperature and ionic conductivity are measured in xLi₂O-(40 − x)Na₂O-50B₂O₃-10Bi₂O₃ and xK₂O-(40 − x)Na₂O-50B₂O₃-10Bi₂O₃ glass systems with 0 ≤ x ≤ 40 mol%. The strength of the mixed alkali effect in T_g, dc electrical conductivity and activation energy has been determined in each glass system. The magnitudes of the mixed alkali effect in T_g for the mixed Li/Na glass system are much smaller than those in the mixed K/Na glasses. The impact of mixed alkali effect on dc electrical conductivity in mixed Li/Na glass system is more pronounced than in the K/Na glass system. The results are explained based on dynamic structure model.     

Electrical conduction, dielectric behavior and magnetoelectric effect in (x)BaTiO3 + (1 − x)Ni0.94Co0.01Mn0.05Fe2O4 ME composites

Electrical and magnetoelectric properties of magnetoelectric (ME) composites containing barium titanate as electrical component and a mixed Ni-Co-Mn ferrite as the magnetic component are reported. The ME composites with a general formula (x)BaTiO₃ + (1 − x)Ni_0.94Co_0.01Mn_0.05Fe₂O₄ where x varies as 0, 0.55, 0.70, 0.85 and 1 were prepared by standard double sintering ceramic method. The presence of both the phases was confirmed by X-ray diffraction technique. The dc resistivity was measured as a function of temperature. The variation of dielectric constant (?) and loss tangent (tan δ) with frequency (100 Hz-1 MHz) and with temperature was studied. The conduction is explained on the basis of small polaron model based on ac conductivity measurements. The static value of ME conversion factor i.e. dc (ME)_H was studied as function of intensity of magnetic field. The changes were observed in dielectric properties as well as ME effect as the molar ratio of the components was varied. A maximum value of ME conversion factor of 610 μV/cm Oe was observed in the case of a composite containing 15 mol% ferrite phase.     

Electrical properties of amorphous Ge15Se60M25 where (M = As or Sn or Bi) films

Thin film samples were prepared from the synthesized amorphous Ge₁₅Se₆₀M₂₅ (where M = Sn or As or Bi) chalcogenide glass compositions by thermal evaporation technique. X-ray analysis shows the amorphous nature of the obtained films. The dc-electrical conductivity was studied for different thicknesses (89-903 nm) as function of temperature in the range (303-413 K) below T_g (glass transition temperature). The obtained results showed that the conduction activation energy has two values indicating the presence of two conduction mechanisms through the investigated range of temperature which can be explained in accordance with Mott and Davis model. The current-voltage characteristics of the investigated samples present a switching phenomenon of memory type. The mean value of the threshold switching voltage increases linearly with increasing film thickness and decreases exponentially with temperature in the investigated range below T_g. The obtained results are explained in accordance with the electrothermal model for the switching process.     

Ac conductivity and dielectric properties of Ge20Se75In5 films

Amorphous films of Ge₂₀Se₇₅In₅ chalcogenide glass were prepared using a thermal evaporation technique. The chemical composition of the deposited films was examined using energy dispersive X-ray spectroscopy (EDX). The ac conductivity and dielectric properties of the prepared films have been studied as a function of temperature in the range from 300 to 423 K and frequency in the range from 10² to 10⁵ Hz. The experimental results indicate that ac conductivity σ_ac(ω) is proportional to ω^s where s equals 0.902 at room temperature and decreases with increasing temperature. The results obtained are discussed in terms of the correlated barrier hopping (CBH) model. The density of localized states N(E_F) at the Fermi level is found to have values of the order 10¹⁹ eV⁻¹ cm⁻³, which increase with temperature. The dielectric constant ?₁ and dielectric loss ?₂ were found to decrease with increasing frequency and to increase with increasing temperature over the ranges studied. The maximum barrier height W_m was estimated from an analysis of the dielectric loss ?₂ according to Giuntini equation. Its value for the deposited films (0.43 eV) agrees with that proposed by the theory of hopping of charge carrier over a potential barrier as suggested by Elliott for chalcogenide glasses.     

Dielectric and impedance properties’ studies of the of lead doped (PbO)-Co2Y type hexaferrite (Ba2Co2Fe12O22 (Co2Y))

In the present work, the preparation of a layered magnetic ceramic oxide Ba₂Co₂Fe₁₂O₂₂ (Co₂Y) is described by the solid state reaction method. X-ray diffraction (XRD) technique was used to study the structural properties. The Rietveld refinement method has confirmed a hexagonal crystal structure with lattice parameters (a = b = 5.8560 ? and c = 43.4977 ?; α = β = 90° and γ = 120°). The dielectric and electrical modulus properties were studied over a range of frequency (1 Hz to 1 MHz) and temperature (313–493 K) using the complex impedance spectroscopy (CIS) technique. The impedance plot showed the first semicircle at high frequency which corresponds to grain effect and the second semicircle at lower frequency which corresponds to grain boundary (conduction phenomenon). A complex modulus spectrum was carried out in order to understand the mechanism of the electrical transport process, which indicates that a non-exponential type of conductivity relaxation is present in this material. The values of the activation energy of the compound (calculated both from dc conductivity and modulus spectrum) are very similar, and hence the relaxation process may be attributed to the same type of charge carriers. The study of the dielectric property, conductivity and loss of ferrite materials, as a function of temperature, is important for microwave absorption applications. The protection of sensitive circuits from the interference of external microwave radiation, is an important technological application of these materials.     

Electrical transport properties of bulk amorphous Gex Se1−x

d. c. -Conductivity measurements have been made as a function of temperature (80–330 K) on bulk amorphous samples of Ge_xSe_1?x (0.1 ? x ?0.7), in order to identify the conduction mechanism and to observe the effect of selenium -doping on the d. c.-conductivity of germanium. It is found that for samples with a low concentration of selenium (0. 5? x ? 0. 7 ), conduction in the high temperature region (330-180 K) is due to thermally assisted tunneling of electrons in the localized states at the conduction band edge, and in the low temperature region (80–190 K), conduction takes place through variable range hopping in the localized states near the Fermi level. The addition of selenium is found to increase the amorphicity of the samples. In the samples with a relatively high content of selenium (0.1 ? x ? 0.4), conduction in the entire temperature range of investigation is due to the thermally assisted tunneling of holes in the localized states at the valence band edge.     

Effect of A-site cation size on magnetic and charge-ordering properties of Ln0.5Sr0.5Mn0.9Cu0.1O3 (Ln = La,Pr, Nd,or Ho)

The structural, magnetic, and electrical properties of Ln_0.5Sr_0.5Mn_0.9Cu_0.1O₃ (Ln = La, Pr, Nd, or Ho) perovskite manganites have been investigated to explore the influence of A-site cation radius (〈r_A〉) and the A-site cation size-disorder (σ²) on the various interdependent phenomena such as ferromagnetism (FM), phase separation (PS), and charge ordering (CO). The temperature dependence magnetization (M–T) curve of La-based sample shows four distinct points at ∼269 K, 255 K, 200 K, and 148 K corresponding to strong FM, cluster glass (CG), weak FM, and charged ordered antiferromagnetic (COAFM) transitions, respectively. Our investigation shows that Neel temperatures (T_N) increases, whereas Curie (T_C) and irreversibility temperatures (T_irr) decrease with decreasing 〈r_A〉, i.e., with increasing σ². Furthermore, the value of the magnetization decreases and resistivity increases with decreasing 〈r_A〉. All samples exhibit insulating behavior in the temperature range 77–300 K and above 110 K the electronic conduction mechanism has been described within the framework of the variable range hopping (VRH) model.     

Electrical transport properties of as evaporated and annealed amorphous GexSe1−x thin films

D.C. conductivity measurements were made on evaporated and annealed amorphous Ge_xSe_1−x thin films as a function of temperature (80–330K) and composition (x = 1.0, 0.9, 0.7, 0.5, 0.3, 0.1). It was observed that for Ge-rich films (x = 1.0, 0.9, 0.7) the conduction in the high temperature region takes place due to thermally assisted tunneling of charge carriers in localized states at the band edges and at low temperatures conduction is due to variable range hopping in localized states near the Fermi level. For Se-rich films (x=0.5, 0.3, 0.1) the conduction is intrinsic in the entire temperature range of measurements. It was observed that annealing reduces the density of states at the Fermi level. At the highest annealing temperature films become polycrystalline.     

Influence of laser-irradiation on the optical constants Se75S25 − xCdx thin films

Amorphous thin films of glassy alloys of Se₇₅S_25 − xCd_x (x = 2, 4 and 6) were prepared by thermal evaporation onto chemically cleaned glass substrates. Optical absorption and reflection measurements were carried out on as-deposited and laser-irradiated thin films in the wavelength region of 500-1000 nm. Analysis of the optical absorption data shows that the rule of no-direct transitions predominates. The laser-irradiated Se₇₅S_25 − xCd_x films showed an increase in the optical band gap and absorption coefficient with increasing the time of laser-irradiation. The results are interpreted in terms of the change in concentration of localized states due to the shift in Fermi level. The value of refractive index increases decreases with increasing photon energy and also by increasing the time of laser-irradiation. With the large absorption coefficient and change in the optical band gap and refractive index by the influence of laser-irradiation, these materials may be suitable for optical disc application.     

Estimation of Mott parameters in amorphous Se80Te20 and Se80Te10M10 (Cd,In, Sb) alloys

In the present communication, d.c. conductivity of a-Se₈₀Te₂₀ and a-Se₈₀Te₁₀M₁₀ (M = Cd, In, Sb) alloys has been studied in the temperature range 225–311 K in order to identify the conduction mechanism and to analyze the effect of different metallic additives on d.c. conduction in a-Se₈₀Te₂₀ alloy below the room temperature. An analysis of the experimental data confirms that conduction in low temperature region is due to variable range hopping in localized states near the Fermi level. The Mott parameters have been calculated in a-Se₈₀Te₂₀ and a-Se₈₀Te₁₀M₁₀ (M = Cd, In, Sb) alloys. The experimental data is found to fit well with Mott condition of variable range hopping conduction.     

Conduction and dielectric polarization in Se thin films

Se films were prepared by thermal evaporation technique in thickness range 150-8500 Å. X-ray diffraction measurements showed that Se films are in the amorphous state. The ac conductivity and dielectric properties of the amorphous Se films have been investigated in the frequency range 100-100 KHz and 100-400 K temperature range. The ac conductivity σ_ac(ω) is found to be proportional to ω^s where s<1. The temperature dependence of both ac conductivity and the parameter s is reasonably well interpreted by the correlated barrier (CBH) model. The dc conductivity at the room temperature was also studied in the same thickness range. It was concluded that the same mechanism of carrier motion might be dominant in both ac polarization and dc conduction. This carrier transport mechanism might be electronic.     

Electrical properties of crystalline PbxSn1−xTe0.5Se0.5 thin films

Electrical conductivity in the dark, σ, and thermoelectric power, S, of Pb_xSn_1−xTe_0.5Se_0.5 films with x = 0.4, 0.6, 0.8, and 1 were studied for films annealed at 473 K in the temperature range 300-473 K, while the Hall voltage was investigated at room temperature. The temperature dependence of σ revealed an intrinsic conduction mechanism above 370 K, while for temperatures less than 370 K an extrinsic conduction is dominant. Both activation energy, ΔE₁, and the energy gap, E_g, were found to decrease with increasing Sn content. This decrease of E_g with increasing Sn content revealed that band inversion exists. The variation of S with temperature revealed that the investigated samples are non-degenerate semiconductors with p-type conduction. Also, the Fermi energy, E_F, was determined from the linear variation of S with 1/T in the intrinsic range. The compositional dependence of the room temperature Hall constant, R_H (0.21-0.38 cm³/Coul.), hole carrier's concentration, p (2.9-1.6 × 10¹⁹ cm⁻³), Hall mobility, μ_H (0.88-0.03 cm²/V s), and effective mass, m^∗/m_e (0.28-0.78) are given.     

Effect of some metallic impurities on the density of localized states in a-Se80Te20 thin films

The present paper reports the d.c. conductivity measurements at high electric fields in vacuum-evaporated thin films of amorphous Se₈₀Te₂₀, Se₇₅Te₂₀Ge₅ and Se₇₅Te₂₀Sb₅ systems. Current-voltage (I-V) characteristics have been measured at various fixed temperatures. In all the samples, at low electric fields ohmic behavior is observed. However, at high electric fields (E∼10⁴ V/cm), non-ohmic behavior is observed. An analysis of the experimental data confirms the presence of space charge limited conduction (SCLC) in all the glassy materials studied in the present case. From the fitting of the data to the theory of SCLC, the density of defect states (DOS) near Fermi level is calculated. The role of the aforesaid impurities in a-Se₈₀Te₂₀ is found to be entirely different. In case of Sb, an increase in DOS is observed. However, a decrease is observed in case of Ge. The change in DOS on impurity incorporation is explained in terms of the change in structure of these glasses.     

High temperature thermoelectric properties of (Ca, Ce)4Mn3O10

Thermoelectric (TE) properties such as resistivity (ρ), Seebeck coefficient (S), and thermal conductivity (κ) of Ca_4−3xCe_3xMn₃O₁₀ (0<x≤0.03) polycrystalline samples were measured from room temperature to 1000 K. ρ shows an obvious decrease with the increment of Ce content. The hopping conduction mechanism is used to explain the conduction behavior of these samples. The negative S values indicate that these materials are n-type. The sample of x=0.03 has the largest power factor, 0.52×10⁻⁴ Wm⁻¹ K⁻² at 1000 K. The value of κ and the dimensionless figure of merit of this sample is 1.51 Wm⁻¹ K⁻¹ and 0.034 at 1000 K, respectively.