Smooth germanium nanowires prepared by a hydrothermal deposition process

Smooth germanium nanowires were prepared using Ge and GeO₂ as the starting materials and Cu sheet as the substrate by a simple hydrothermal deposition process. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) characterizations show that the germanium nanowires are smooth and straight with uniform diameter of about 150 nm in average and tens of micrometers in length. X-ray diffraction (XRD) and Raman spectrum of the germanium nanowires display that the germanium nanowires are mainly composed of cubic diamond phase. PL spectrum shows a strong blue light emission at 441 nm. The growth mechanism is also discussed.     

Synthesis and photoluminescence properties of aligned Zn2GeO4 coated ZnO nanorods and Ge doped ZnO nanocombs

Aligned Zn₂GeO₄ coated ZnO nanorods and Ge doped ZnO nanocombs were synthesized on a silicon substrate by a simple thermal evaporation method. The structure and morphology of the as-synthesized nanostructure were characterized using scanning electron microscopy and transmission electron microscopy. The growth of aligned Zn₂GeO₄ coated ZnO nanorods and Ge doped ZnO nanocombs follows a vapor-solid (VS) process. Photoluminescence properties were also investigated at room temperature. The photoluminescence spectrum reveals the nanostructures have a sharp ultraviolet luminescence peak centered at 382 nm and a broad green luminescence peak centered at about 494 nm.     

Dependence of growth conditions on copper germanate nanowires and their electrochemical characteristics

Copper germanate (CuGeO₃) nanowires have been synthesized by the hydrothermal deposition process using GeO₂ and copper foil as the resource as well as the deposition substrate. The factors including hydrothermal temperature, pressure and duration of the process were investigated in order to analyze the processing parameters that control the formation process, morphology and size of the nanowires. The dependence of the nanowires properties on the growth conditions shows that the CuGeO₃ nanowires can be synthesized in a large range of different hydrothermal parameters from 400 °C to 250 °C. The hydrothermal pressure has an important effect on the formation and growth of the CuGeO₃ nanowires. The CuGeO₃ nanowires exhibit good electrochemical cyclic voltammetry characteristics owing to offering many advantages in sensing applications including their small size, high aspect ratio and conductance.     

Electrical characterization of high-k gate dielectrics on Ge with HfGeN and GeO2 interlayers

Two kinds of HfSiO_x/interlayers (ILs)/Ge gate stack structures with HfGeN- and GeO₂-ILs were fabricated using electron cyclotron resonance (ECR) plasma sputtering and the subsequent post deposition annealing (PDA). It was found that HfGe was formed by the deposition of Hf metal on Ge and changed to HfGeN by N₂ ECR-plasma irradiation, which was used as IL. Another IL was GeO₂, which was grown by thermal oxidation at 500 °C. For dielectrics with HfGeN-IL, PDA of 550 °C resulted in effective oxide thickness (EOT) of 2.2 nm, hysteresis of 0.1 V, and interface state density (D_it) = 7 × 10¹² cm^− 2 eV^− 1. For dielectrics with GeO₂-IL, PDA of 500 °C resulted in EOT of 2.8 nm, hysteresis of 0.1 V, and D_it = 1 × 10¹² cm^− 2 eV^− 1. The structural change of HfSiO_x/GeO₂/Ge during the PDA was clarified by using X-ray photoelectron spectroscopy, and the gate stack formation for obtaining the good IL was discussed.     

Catalyst-free growth of Sb2Te3 nanowires

In this study, a catalyst-free growth method was discovered to prepare the high-quality single crystal Sb₂Te₃ nanowires from the Al:Ge:Sb:Te thin films. The diameters of Sb₂Te₃ nanowires were found to be ~ 100 nm and their lengths were as great as tens of micrometers. The Al content and the annealing temperature play an important role in the growth of Sb₂Te₃ nanowires. When the Al content (> 12.4 at.%) was sufficiently contained in Al:Ge:Sb:Te film, Sb₂Te₃ nanowires were extruded spontaneously on the surface of thin film with increase in annealing temperatures. Compared with the vapor-liquid-solid method, our method has advantages of low temperature (~ 300 °C) and no impurities, such as a metal catalyst.     

Growth and characterization of germanium nanowires by electron beam evaporation

Germanium nanowires were grown on Au coated Si substrates at 380 °C in a high vacuum (5 × 10^− 5 Torr) by e-beam evaporation of Germanium (Ge). The morphology observation by a field emission scanning electron microscope (FESEM) shows that the grown nanowires are randomly oriented with an average length and diameter of 600 nm and 120 nm respectively for a deposition time of 60 min. The nanowire growth rate was measured to be ∼ 10 nm/min. Transmission electron microscope (TEM) studies revealed that the Ge nanowires were single crystalline in nature and further energy dispersive X-ray analysis (EDAX) has shown that the tip of the grown nanowires was capped with Au nanoparticles, this shows that the growth of the Ge nanowires occurs by the vapour liquid solid (VLS) mechanism. HRTEM studies on the grown Ge nanowire show that they are single crystalline in nature and the growth direction was identified to be along [110].     

Nanoscale interfacial engineering to grow Ge on Si as virtual substrates and subsequent integration of GaAs

We have demonstrated the scalability of a process previously dubbed as Ge “touchdown” on Si to substantially reduce threading dislocations below 10⁷/cm² in a Ge film grown on a 2 inch-diameter chemically oxidized Si substrate. This study also elucidates the overall mechanism of the touchdown process. The 1.4 nm thick chemical oxide is first formed by immersing Si substrates in a solution of H₂O₂ and H₂SO₄. Subsequent exposure to Ge flux creates 3 to 7 nm-diameter voids in the oxide at a density greater than 10¹¹/cm². Comparison of data taken from many previous studies and ours shows an exponential dependence between oxide thickness and inverse temperature of void formation. Additionally, exposure to a Ge or Si atom flux decreases the temperature at which voids begin to form in the oxide. These results strongly suggest that Ge actively participates in the reaction with SiO₂ in the void formation process. Once voids are created in the oxide under a Ge flux, Ge islands selectively nucleate within the void openings on the newly exposed Si. Island nucleation and growth then compete with the void growth reaction. At substrate temperatures between 823 and 1053 K, nanometer size Ge islands that nucleate within the voids continue to grow and coalesce into a continuous film over the remaining oxide. Coalescence of the Ge islands is believed to result in the creation of stacking faults in the Ge film at a density of 5 × 10⁷/cm². Additionally, coalescence results in films of 3 µm thickness having a root-mean-square roughness of 8 to 10 nm. We have found that polishing the films with dilute H₂O₂ results in roughness values below 0.5 nm. However, stacking faults originating at the Ge-SiO₂ interface and terminating at the Ge surface are polished at a slightly reduced rate, and show up as 1 to 2 nm raised lines on the polished Ge surface. These lines are then transferred into the subsequent growth morphology of GaAs deposited by metal-organic chemical vapor deposition. Room temperature photoluminescence shows that films of GaAs grown on Ge-on-oxidized Si have an intensity that is 20 to 25% compared to the intensity from GaAs grown on commercial Ge or GaAs substrates. Cathodoluminescence shows that nonradiative defects occur in the GaAs that spatially correspond to the stacking faults terminating at the Ge surface. The exact nature of these nonradiative defects in the GaAs is unknown, however, GaAs grown on annealed samples of Ge-on-oxidized Si, whereby annealing removes the stacking faults, have photoluminescence intensity that is comparable to GaAs grown on a GaAs substrate.     

Preparation of VO2 nanowires and their electric characterization

Large-scale VO₂ nanowires have been synthesized by two-step method. First, we have been obtained (NH₄)_0.5V₂O₅ nanowire precursors by hydrothermal treatment of ammonium metavanadate solution at 170 °C. Secondly, the precursors have been sealed in quartz tube in vacuum and annealed to form VO₂ nanowires at 570 °C. Scanning electron microscope and transmission electron microscope analysis show that the nanowires have self-assembling nanostructure with the diameter of about 80-200 nm, length up to125 μm. Electrical transport measurements show that it is semiconductor with conduction activate energy of 0.128 eV. A metal-semiconductor transition can be observed around 341 K.     

Oxidation resistance of thin boron carbo-nitride films on Ge(100) and Ge nanowires

Chemical vapor deposition of thin (< 10 nm) films of amorphous boron carbo-nitride (BC_0.7N_0.08, or BCN) on Ge(100) and Ge nanowire (GeNW) surfaces was studied to determine the ability of BCN to prevent oxidation of Ge. X-ray photoelectron spectroscopy was used to track Ge oxidation of BCN-covered Ge(100) upon exposure to ambient, 50 °C deionized water, and a 250 °C atomic layer deposition HfO₂ process. BCN overlayers incorporate O immediately upon ambient or water exposure, but it is limited to 15% O uptake. If the BCN layer is continuous, the underlying Ge(100) surface is not oxidized despite the incorporation of O into BCN. The minimum continuous BCN film thickness that prevents Ge(100) oxidation is ~ 4 nm. Thinner films (≤ 3.2 nm) permitted Ge(100) oxidation in each of the oxidizing environments studied. GeNWs with a 5.7 nm BCN coating were resistant to oxidation for at least 5 months of ambient exposure. High resolution transmission electron microscopy images of HfO₂/BCN/Ge(100) cross-sections and BCN-coated GeNWs reveal clean, abrupt BCN-Ge(100) interfaces.     

Atomic layer deposition of HfO2 on self-assembled monolayer-passivated Ge surfaces

HfO₂ films are not easily deposited on hydrophobic self-assembled monolayer (SAM)-passivated surfaces. However, in this study, we deposited HfO₂ films on a tetradecyl-modified SAM with a Ge surface using atomic layer deposition at 350 °C. A slightly thinner HfO₂ film thickness was obtained on the tetradecyl-modified SAM passivated samples than that typically obtained on GeO_x-passivated samples. The resulting electrical properties are explained by the physical thickness and stoichiometry of the interfacial layer.     

Synthesis of aluminium borate nanowires by sol-gel method

A sol-gel process followed by annealing was employed to fabricate single crystal aluminium borate (Al₄B₂O₉ and Al₁₈B₄O₃₃) nanowires. The diameter of Al₄B₂O₉ nanowires synthesized at 750 °C annealing is ranging from 7 to 17 nm, and that of Al₁₈B₄O₃₃ nanowires synthesized at 1050 °C annealing is about 38 nm. Instead of the well-known vapor-liquid-solid (VLS) mechanism, self-catalytic mechanism was used to explain the growth of the nanowires.     

Ag-catalyzed synthesis of europium borate Eu(BO2)3 nanowires, growth mechanism and luminescent properties

Eu(BO₂)₃ nanowires with diameters of 10-20 nm were fabricated through direct sintering Eu(NO₃)₃·6H₂O and H₃BO₃ with Ag as catalyst. The result of X-ray diffraction (XRD) indicated that the nanowire was single-crystalline with body-centered monoclinic structure. Based on the fact that Ag nanoparticles attached to the tips and middles of nanowires, a vapor-liquid-solid (VLS) growth mechanism of the Eu(BO₂)₃ nanowires is proposed. Three well-defined stages have been clearly identified during the process: Ag-Eu-B-O cluster process, crystal nucleation, and axial growth. The photoluminescence characteristics under UV excitation were investigated. The dominated Eu³⁺ orange-red emission corresponding to the magnetic dipole transition ⁵D₀ → ⁷F₁ is centered at 591 nm, indicating that Eu³⁺ is located at high symmetry crystal field with inversion center.     

High quality Ge epitaxial layers on Si by ultrahigh vacuum chemical vapor deposition

Flat, relaxed Ge epitaxial layers with low threading dislocation density (TDD) of 1.94 × 10⁶ cm^− 2 were grown on Si(001) by ultrahigh vacuum chemical vapor deposition. High temperature Ge growth at 500 °C on 45 nm low temperature (LT) Ge buffer layer grown at 300 °C ensured the growth of a flat surface with RMS roughness of 1 nm; however, the growth at 650 °C resulted in rough intermixed SiGe layer irrespective of the use of low temperature Ge buffer layer due to the roughening of LT Ge buffer layer during the temperature ramp and subsequent severe surface diffusion at high temperatures. Two-dimensional Ge layer grown at LT was very crucial in achieving low TDD Ge epitaxial film suitable for device applications.     

Use of water vapor for suppressing the growth of unstable low-κ interlayer in HfTiO gate-dielectric Ge metal-oxide-semiconductor capacitors with sub-nanometer capacitance equivalent thickness

Annealing of high-permittivity HfTiO gate dielectric on Ge substrate in different gases (N₂, NH₃, NO and N₂O) with or without water vapor is investigated. Analysis by transmission electron microscopy indicates that the four wet anneals can greatly suppress the growth of a GeO_x interlayer at the dielectric/Ge interface, and thus decrease interface states, oxide charges and gate leakage current. Moreover, compared with the wet N₂ anneal, the wet NH₃, NO and N₂O anneals decrease the equivalent permittivity of the gate dielectric due to the growth of a GeO_xN_y interlayer. Among the eight anneals, the wet N₂ anneal produces the best dielectric performance with an equivalent relative permittivity of 35, capacitance equivalent thickness of 0.81 nm, interface-state density of 6.4 × 10¹¹ eV^− 1 cm^− 2 and gate leakage current of 2.7 × 10^− 4 A/cm² at V_g = 1 V.     

Synthesis and characterization of ZnO nanowires for nanosensor applications

In this paper we report the synthesis of ZnO nanowires via chemical vapor deposition (CVD) at 650 °C. It will be shown that these nanowires are suitable for sensing applications. ZnO nanowires were grown with diameters ranging from 50 to 200 nm depending on the substrate position in a CVD synthesis reactor and the growth regimes. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), photoluminescence (PL), and Raman spectroscopy (RS) have been used to characterize the ZnO nanowires. To investigate the suitability of the CVD synthesized ZnO nanowires for gas sensing applications, a single ZnO nanowire device (50 nm in diameter) was fabricated using a focused ion beam (FIB). The response to H₂ of a gas nanosensor based on an individual ZnO nanowire is also reported.     

Studies on the synthesis of CdCO3 nanowires and porous CdO powder

In the present study, we demonstrate the self transformation of aqueous cadmium acetate into CdCO₃ nanowires through hydrothermal reaction. The reaction temperature and the volume ratio of water to ethanol were found to be crucial for the formation of CdCO₃ nanowires. The nanowires are of single crystal in nature having width ∼ 17-30 nm as observed from selected area electron diffraction (SAED) pattern and transmission electron microscopic (TEM) results. The major weight loss found in thermogravimetric analysis (TGA) corresponds to the formation of CdO and CO₂. The powder X-ray diffraction (PXRD) patterns of CdCO₃ and CdO are respectively indexed to pure rhombohedral and cubic phases. The photoluminescence (PL) spectrum of CdO exhibits an emission peak at 483 nm due to the transition between the valence and conduction bands.     

Low threading dislocation Ge on Si by combining deposition and etching

Blanket and selective Ge growth on Si is investigated using reduced pressure chemical vapor deposition. To reduce the threading dislocation density (TDD) at low thickness, Ge deposition with cyclic annealing followed by HCl etching is performed. In the case of blanket Ge deposition, a TDD of 1.3 × 10⁶ cm^− 2 is obtained, when the Ge layer is etched back from 4.5 μm thickness to 1.8 μm. The TDD is not increased relative to the situation before etching. The root mean square of roughness of the 1.8 μm thick Ge is about 0.46 nm, which is of the same level as before HCl etching. Further etching shows increased surface roughness caused by non-uniform strain distribution near the interface due to misfit dislocations and threading dislocations. The TDD also becomes higher because the etchfront of Ge reaches areas with high dislocation density near the interface. In the case of selective Ge growth, a slightly lower TDD is observed in smaller windows caused by a weak pattern size dependence on Ge thickness. A significant decrease of TDD of selectively grown Ge is also observed by increasing the Ge thickness. An about 10 times lower TDD at the same Ge thickness is demonstrated by applying a combination of deposition and etching processes during selective Ge growth.     

Chemical vapor deposition and electrical characterization of sub-10 nm diameter InSb nanowires and field-effect transistors

Synthesis of InSb nanowires using a chemical vapor deposition technique, as a function of growth temperature and time, was investigated. High aspect ratio InSb nanowires, having a diameter of about 5–10 nm, were grown at 400 °C for 1 h on InSb (1 1 1) substrate onto which 60 nm Au particle was used as a metal catalyst. The synthesized InSb nanowires had zinc blend single crystal structure without any stacking faults, and they were covered with a thin (∼1 nm thick) amorphous layer. Electrical characterization of InSb nanowires was conducted utilizing a back-gated SNWFET. Device characterization demonstrated that NWs were n-type and exhibited a high I_on/I_off ratio of 10⁶ and device resistance of 250 kΩ.     

Controllable hydrothermal synthesis of Cu2S nanowires on the copper substrate

In this paper, a simple solution-based method has been applied to fabricate metal chalcogenide nanostructures. Abundant Cu₂S nanowires on Cu substrates are successfully prepared through the in-situ hydrothermal reaction between sulfur powder and Cu foil. It is observed that the addition of hydrazine and cetyltrimethylammonium bromide plays an important role in the growth of Cu₂S nanowires. A rolling-up mechanism of metal chalcogenide film is used to illustrate the growth of these nanostructures. UV-vis spectrum of Cu₂S nanowires reveals obvious absorption below the wavelength of 900 nm. The calculated band gap of Cu₂S nanowires (1.5 eV) shows obvious blue shift because of the quantum size effect.     

Synthesis,characterization and formaldehyde gas sensitivity of La0.7Sr0.3FeO3 nanoparticles assembled nanowires

La_0.7Sr_0.3FeO₃ nanoparticles assembled nanowires were synthesized by a hydrothermal method assisted with cetyltrimethylammonium bromide (CTAB). The hydrothermal temperature was 180 °C and the annealed temperature was 700 °C. Scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) were used to characterize the morphology, composition and structural properties of the materials. The results showed that the La_0.7Sr_0.3FeO₃ nanoparticles assembled nanowires had a high aspect ratio (the largest aspect ratio >100); the size of the nanoparticles was about 20 nm and the diameter of the nanowires was about 100–150 nm. The growth mechanism of La_0.7Sr_0.3FeO₃ nanowires was discussed. Gas sensors were fabricated by using La_0.7Sr_0.3FeO₃ nanowires. Formaldehyde gas sensing properties were carried out in the concentration range of 0.1–100 ppm at the optimum operating temperature of 280 °C. The response and recovery times to 20 ppm formaldehyde of the sensor were 110 s and 50 s, respectively. The gas sensing mechanism of La_0.7Sr_0.3FeO₃ nanowires was investigated.