Novel Thermoelectric Modules for Cooling Powerful LEDs: Experimental Results

We present the results of an experimental study of a cooling system based on a novel thermoelectric module specifically designed for thermal management of high-power light-emitting diodes (LEDs). The Seoul Semiconductor LED W724C0 device was chosen for experimental validation of the efficiency of the proposed cooling unit. Two cooling systems with identical heat sinks were tested for comparison: a state-of-the-art one based on an insulated metal substrate-printed circuit board (IMS-PCB), and a system with thermoelectric cooling. The obtained results show that use of thermoelectrics results in a considerable reduction of the LED operating temperature, providing increased light output and greatly increased LED lifetime.     

Nanoconfined Atomic Layer Deposition of TiO2/Pt Nanotubes: Toward Ultrasmall Highly Efficient Catalytic Nanorockets

Small machines are highly promising for future medicine and new materials. Recent advances in functional nanomaterials have driven the development of synthetic inorganic micromachines that are capable of efficient propulsion and complex operation. Miniaturization and large‐scale manufacturing of these tiny machines with true nanometer dimension are crucial for compatibility with subcellular components and molecular machines in operation. Here, block copolymer lithography is combined with atomic layer deposition for wafer‐scale fabrication of ultrasmall coaxial TiO₂/Pt nanotubes as catalytic rocket engines with length below 150 nm and a tubular reactor size of only 20 nm, leading to the smallest man‐made rocket engine reported to date. The movement of the nanorockets is examined using dark‐field microscopy particle tracking and dynamic light scattering. The high catalytic activity of the Pt inner layer and the reaction confined within the extremely small nanoreactor enable highly efficient propulsion, achieving speeds over 35 µm s^?1 at a low Reynolds number of <10^?5. The collective movements of these nanorockets are able to efficiently power the directional transport of significantly larger passive cargo.     

A Novel Optimization Method for the Electric Topology of Thermoelectric Modules Used in an Automobile Exhaust Thermoelectric Generator

Based on Bi₂Te₃ thermoelectric modules, a kind of automobile exhaust thermoelectric generator (AETEG) with a single-column cold-source structure was designed. To enhance its net power and efficiency, the output performance of all the thermoelectric modules was tested with a temperature monitoring unit and voltage monitoring unit, and modeled using a back-propagation (BP) neural network based on various hot-source temperatures, cold-source temperatures, load currents, and contact pressures according to the temperature distribution of the designed heat exchanger and cooling system. Then, their electric topology (series or parallel hybrid) was optimized using a genetic algorithm to achieve the maximum peak power of the AETEG. From the experimental results, compared with when all the thermoelectric modules were connected only in series or parallel at random, it is concluded that the AETEG performance is evidently affected by the electric topology of all the single thermoelectric modules. The optimized AETEG output power is greatly superior to the other two investigated designs, validating the proposed optimized electric topology as both feasible and practical.     

A Highly Efficient Host/Dopant Combination for Blue Organic Electrophosphorescence Devices

We have synthesized a new blue‐emitting iridium complex, FIrpytz (iridium(III) bis(4,6‐difluorophenylpyridinato)‐4‐(pyridin‐2‐yl)‐1,2,3‐triazolate), and two new bis(triphenylsilyl) derivatives, BSB (4,4'‐bis‐triphenylsilanyl‐biphenyl) and BST (4,4″‐bis(triphenylsilanyl)‐(1,1′,4′,1″)‐terphenyl) as hosts for blue phosphorescence devices. The photoluminescence (PL) and electroluminescence (EL) properties of different host/dopant combinations were studied in details. These two arylsilanes showed glass transition temperatures (T_gs) ≥ 100 °C higher than those of UGH1 (diphenyl‐di(o‐tolyl)silane) and UGH2 (1,4‐bis(triphenylsilyl)benzene), the common arylsilane‐based hosts. The band gaps for BSB and BST are 4.16 and 3.78 eV, respectively, lower than that of UGH2 of 4.40 eV. The FIrpytz‐doped UGH2, BSB and BST films exhibit PL quantum yields of 0.58, 0.83 and 0.48, respectively. The EL devices using FIrpytz or FIrpic (iridium(III) bis(4,6‐difluorophenylpyridinato)‐picolinate) as the blue phosphorescence dopants and UGH2, BSB and BST as the hosts also showed that BSB‐based devices gave the best device efficiencies. Both PL and EL studies show that BSB is better than UGH2 and BST as the host material for FIrpytz and FIrpic. In particular, the use of FIrpytz as dopant, BSB as host and LiF/Al as cathode provides a remarkably efficient combination for blue electrophosphorescence device reaching a very high external quantum efficiency of 19.3% at 8.5 V and a high luminance level of 20500 cd m⁻² at 19.3 V after electroluminescence started at 5.1 V.     

A Targeted Functional Design for Highly Efficient and Stable Cathodes for Rechargeable Li‐Ion Batteries

Despite the great success of Li‐ion batteries (LIBs) up to now, higher demand has been raised with the emergence of the new generation electrics, such as portable devices and electrical vehicles. Even with the improvement on anodes, the cathodes with high capacity and long‐lastingness still remain a challenge. New 3D NiCo₂O₄@V₂O₅ core–shell arrays (CSAs) on carbon cloth as cathodes in LIBs have been reported in this work. The nanodesigned materials realize the theoretical specific capacity of V₂O₅ with high power rate based on the total mass of the framework and amount of active materials. The electrodes achieve superb cycling stability, among the most stable cathodes for LIBs ever reported. From both in situ transmission electron microscopy and quantum level calculations, the 3D NiCo₂O₄ nanosheet frameworks provide high electron conductivity and the skeleton of the robust CSAs without participating in the lithiation/delithiation; the thickness of the layered V₂O₅ plays a key role for Li diffusivity and the capacity contribution of electrodes. The structures herein point to new design concepts for high‐performance nanoarchitectures for LIB cathodes.     

Design of Apparatus for Ni/Mg2Si and Ni/MnSi1.75 Contact Resistance Determination for Thermoelectric Legs

In recent decades, thermoelectricity has been widely studied as a potential new source of renewable energy. One of the major challenges to improve the efficiency of thermoelectric (TE) devices is to minimize the contact resistance between the active material and the electrodes, since this represents the major loss of charge in a TE module. This article describes the fabrication of an apparatus for TE leg characterization built with commercial and custom-made parts based on the analog one-dimensional transmission-line method. This device permits contact resistance measurements of bulk TE legs. p- and n-type TE materials, Mg₂Si_0.98Bi_0.02 and MnSi_1.75Ge_0.02, respectively, were metallized with nickel foils and used as test materials for contact resistance characterization. Contact resistance values of 0.5 mΩ mm² for Ni/Mg₂Si_0.98Bi_0.02 junctions and 4 mΩ mm² for Ni/MnSi_1.75Ge_0.02 junctions have been measured. Contact resistance measurements are discussed depending on materials processing and the experimental measurement conditions.     

用于半导体激光器热沉的金刚石膜/Ti/Ni/Au金属化体系的研究

提出了一种用于半导体激光器热沉的金刚石膜/Ti/Ni/Au金属化体系.采用金属化前期预处理、电子束蒸镀技术和后续低温真空热处理,金属层和金刚石膜之间获得了良好的结合强度.AES分析表明Ti/Ni/Au金刚石膜金属化体系中,Ni层起到了良好的阻挡效果; XRD显示预处理过的金刚石膜,镀膜后经过673K,2h低温真空热处理,Ti/金刚石膜界面形成TiO和TiC;RBS分析进一步证实该金属化体系在673K,1h真空加热条件下具有良好的热稳定性.采用完全相同的半导体激光器结构,金刚石膜热沉的热阻仅为氮化铝热沉的40%.     

用于半导体激光器热沉的金刚石膜/Ti/Ni/Au金属化体系的研究

提出了一种用于半导体激光器热沉的金刚石膜/ Ti/ Ni/ Au金属化体系.采用金属化前期预处理、电子束蒸镀技术和后续低温真空热处理,金属层和金刚石膜之间获得了良好的结合强度.AES分析表明Ti/ Ni/ Au金刚石膜金属化体系中,Ni层起到了良好的阻挡效果;XRD显示预处理过的金刚石膜,镀膜后经过6 73K,2 h低温真空热处理,Ti/金刚石膜界面形成Ti O和Ti C;RBS分析进一步证实该金属化体系在6 73K,1h真空加热条件下具有良好的热稳定性.采用完全相同的半导体激光器结构,金刚石膜热沉的热阻仅为氮化铝热沉的4 0 % .     

A Highly Efficient and Linear Class-AB/F Power Amplifier for Multimode Operation

The class-AB/F power amplifier (PA), a multimode PA, which can operate at both class-AB and class-F modes, is analyzed and compared with the conventional class-F and class-AB PAs. The open-circuited third harmonic control circuit enhances the efficiency of the PA without deteriorating the linearity of class-AB mode of the PA. The voltage and current waveforms are simulated to evaluate the appropriate operation for the modes. To demonstrate the multimode PA, the PA is implemented using an InGaP/GaAs HBT process and it is tested with reverse-link IS-95A code division multiple access (CDMA) and PCS1900 global system for mobile communications signals in the personal communications service band. The class-AB operation for a CDMA signal delivers a power-added efficiency (PAE) of 38.9% and an adjacent channel power ratio of 49.5 and 56.5 dBc at the offset of 1.25 and 2.25 MHz, respectively, at the output power of 28 dBm. The maximum PAE of 64.7% under the class-F operation is measured at 32.5-dBm output power for a GSM signal. The class-AB/F PA is a good candidate for the multimode PA of next-generation wireless communication systems.     

一种基于SBC技术的16kbit/s高效语音编译码器

本文介绍一种基于SBC技术的16kbit／s高效语音编译码器．在该编码方案中，IIR型正义镜象滤波器（QMF）用于实现语音分带，而基于快速搜索技术的矢量量化（FVQA）用于对除基带（采用ADPCM技术）外的其余高频带语音编码。一片TMS320C25芯片实现了两路16kbit／s语音编译码器，并借此实现了两人双向实时通信。得到良好的语音可懂度、自然度及客观评测结果。     

Plasmon Based Double‐Layer Hydrogel Device for a Highly Efficient Solar Vapor Generation

Solar vapor generation is a facile and an efficient way for solar energy harvesting, which is applied to address the issue of fresh water extraction from sewage or brine. Several solar vapor generation devices have been developed in the past few years, but the low evaporation rate still remains as a challenge. In this work, a novel double‐layer solar vapor generation device, named as Ag‐PSS‐AG/AG device, is reported. This device is based on the hierarchical composition of silver nanoparticles (Ag NPs) and poly (sodium‐p‐styrenesulfonate) (PSS) decorated agarose gel (AG). The device reveals a synergetic effect of the two layers with high light‐harvesting and water‐transfer performance, respectively, leading to an ultrahigh vapor generation rate of 2.10 kg m^?2 h^?1 with a solar thermal efficiency of 92.8% under 1 sun illumination. This high evaporation rate is mainly owing to the powerful light‐thermal conversion of Ag NPs as well as the outstanding water transfer capability of agarose hydrogel. Consequently, this device can be directly used for the purification of sewage and muddy water. It is also promising for applications in separation, humidity management, and others.     

Physical,Mechanical, and Structural Properties of Highly Efficient Nanostructured n- and p-Silicides for Practical Thermoelectric Applications

Cost-effective highly efficient nanostructured n-type Mg₂Si_1?x Sn _x and p-type higher manganese silicide (HMS) compositions were prepared for the development of practical waste heat generators for automotive and marine thermoelectric applications, in the frame of the European Commission (EC)-funded PowerDriver project. The physical, mechanical, and structural properties were fully characterized as part of a database-generation exercise required for the thermoelectric converter design. A combination of high maximal ZT values of ～0.6 and ～1.1 for the HMS and Mg₂Si_1?x Sn _x compositions, respectively, and adequate mechanical properties was obtained.     

一种高效率访问NAND数据的方法

针对NAND闪存的擦写特点,提出了一种基于内存的数据缓存机制访问NAND数据的方法.该方法以NAND块大小的整数倍创建缓存,并采用了“缓存块使用率”的缓存替换机制.使用该方法不仅大大提高了缓存的有效命中率,而且能大幅提高NAND的读写速度.提出的数据缓存机制,对于NAND的写操作,不需要每次都写入NAND,也能有效减少对NAND的擦写次数,不但可以降低坏块产生的几率,而且可以有效的延长NAND使用的寿命.     

AES算法中SubBytes变换的高速硬件实现

SubBytes交换是AES算法中唯一的非线性变换，也是硬件实现模块中的关键部分。文章在研究有限域GF（2g）与其复合域GF（（2^4）^2）变换的基础上，采用组合逻辑替代RAM查表的方法实现SubBytes变换，并在其内部实现了三级流水线。在AhemEP20KE系列的FPGA上进行了综合仿真验证，基于此高速SubBytes变换实现方法所设计的AES-128模块在ECB模式下的理论最大加密处理速度达到了12Gbps。     

Manufacturing Processes for TiO x -Based Thermoelectric Modules: from Suboxide Synthesis to Module Testing

An overview of different TiO _x synthesis methods with regard to enhancement of thermoelectric properties and transfer of the synthesis process to cost-efficient methods as well as joining techniques for module manufacture is presented. Different synthesis routes were applied and investigated, namely synthesis of TiO _x via reduction with less gas formation by mixing TiO₂ and TiC [powder-derived (PD)-TiO _x ], a bottom-up approach via a precursor route for synthesizing TiO _x directly [precursor-derived (PDC)-TiO _x ], and the combination by mixing TiO₂ with precursor (PDC-TiO _x /TiO₂). All the approaches resulted in adjustable phase composition with different oxygen contents and, therefore, adjustable electrical properties as well as different microstructures to enhance the physical and thermoelectric properties. The electrical resistivity could be adjusted from 1 mΩ cm to 1000 mΩ cm through the oxygen content of TiO _x . The research included investigations of cost-efficient production processes for thermoelectric material such as spray-drying, spark plasma sintering, hot pressing or pressureless sintering in terms of shaping, sintering, and machining, as well as joining techniques to build a complete thermoelectric module. To realize thermal and electrical connections, technologies for joining and packaging were developed. For a first demonstration of the feasibility of TiO _x -based thermoelectric modules for use at high temperatures, a unileg n-type module with footprint of 30 mm × 30 mm was designed. Low-volume fabrication yielded more than 20 single modules. Finally, the modules were successfully tested under conditions close to those of the desired applications with hot-side temperature up to 600°C.     

Fluorescent,Carrier‐Trapping Dopants for Highly Efficient Single‐Layer Polyfluorene LEDs

Two fluorescent molecules with an alkynylanthracene core and pyrene end‐cappers have been synthesized and fully characterized. Carbazole moieties are introduced into one molecule at the C9 position of the fluorene linkages to enhance the hole‐transport ability of the molecule and to reduce intermolecular interactions. Both compounds exhibit high thermal stabilities and narrow energy bandgaps. Single‐layer polymer light‐emitting diodes (PLEDs) based on poly(9,9‐dioctylfluorene) (PFO) doped with the synthesized compounds exhibit excellent performance. A PLED with 0.2 % of dopant 7 had a high luminance efficiency of 10.7 ± 0.3 cd A^–1 as well as a brightness of 1400 cd m^–2 at a current density of 13 mA cm^–2, and a low turn on voltage (3.1 V) at a brightness of 10 cd m^–2. A maximum brightness of 20 500 ± 1400 cd m^–2 at 7 V was also measured. The high efficiency of the device's performance is attributed to the good electron and hole trapping ability of the dopants, which possess suitable energy levels as compared to those of PFO.     

Thermally stable Ge/Ag/Ni Ohmic contact for InAlAs/InGaAs/InP HEMTs

Excellent annealed ohmic contacts based on Ge/Ag/Ni metallization have been realized in a temperature range between 385 and 500/spl deg/C, with a minimum contact resistance of 0.06 /spl Omega//spl middot/mm and a specific contact resistivity of 2.62 /spl times/10/sup -7/ /spl Omega//spl middot/cm/sup 2/ obtained at an annealing temperature of 425/spl deg/C for 60 s in a rapid thermal annealing (RTA) system. Thermal storage tests at temperatures of 215 and 250/spl deg/C in a nitrogen ambient showed that the Ge/Ag/Ni based ohmic contacts with an overlay of Ti/Pt/Au had far superior thermal stabilities than the conventional annealed AuGe/Ni ohmic contacts for InAlAs/InGaAs high electron mobility transistors (HEMTs). During the storage test at 215/spl deg/C, the ohmic contacts showed no degradation after 200 h. At 250/spl deg/C, the contact resistance value of the Ge/Ag/Ni ohmic contact increased only to a value of 0.1 /spl Omega//spl middot/mm over a 250-h period. Depletion-mode HEMTs (D-HEMTs) with a gate length of 0.2 /spl mu/m fabricated using Ge/Ag/Ni ohmic contacts with an overlay of Ti/Pt/Au demonstrated excellent dc and RF characteristics.     

Ge／Au和Ge／Ag双层膜中非晶Ge加热晶化的动态观测

本文在JEM—1000高压电镜中对Ge/Au和Ge/Ag双层膜进行了加热动态观测,并与真空退火的结果进行了比较。结果表明,双层膜中非晶Ge的晶化不仅取决于加热温度,而且取决于加热时间。加热条件的不同引起不同的晶化机制。本文讨论了非晶Ge晶化时等轴状缩聚区的形成与长大,并提出了这类区域内的能量平衡条件。     

A Highly Efficient Cipher Processor for Dual-Field Elliptic Curve Cryptography

This brief presents a high-throughput dual-field elliptic-curve-cryptography (ECC) processor that features all ECC functions with the programmable field and curve parameters over both the prime and binary fields. The proposed architecture is parallel and scalable. Using 0.13-$muhbox{m}$ CMOS technology, the core size of the processor is 1.44 $hbox{mm}^{2}$ . The measured results show that our ECC processor can perform one 160-bit point scalar multiplication with coordinate conversion over the prime field in 608 $muhbox{s}$ at 121 MHz with only 70.0 mW and the binary field in 372 $muhbox{s}$ at 146 MHz with 82.1 mW. The ECC processor chip outperforms other ECC hardware designs in terms of functionality, scalability, performance, cost effectiveness, and power consumption. In addition, the system analysis shows that our design is very efficient, compared with the software implementation for realistic security applications.