1.55 mu m polarization-insensitive high-gain tensile-strained-barrier MQW optical amplifier

A polarization-insensitive semiconductor optical amplifier was realized at a wavelength of 1.55 mu m. The active layer consisted of a tensile-strained-barrier multiple quantum well (MQW) structure. At a driving current of 150 mA, no dependence of the saturation characteristics on modes was obtained. The saturation output power at which the gain decreases 3 dB is 13.3 dBm. A slightly higher saturation output power of 14 dBm was measured at a driving current of 200 mA. No large difference was observed between transverse-electric (TE) and transverse-magnetic (TM) modes. A high gain of 27.5 dB at a polarization sensitivity of 0.5 dB and a high saturation output of 14 dBm were realized simultaneously by using a longer device with reduced residual facet reflectivities.<>     

High-output-power polarization-insensitive semiconductor optical amplifier

A high-output-power 1550 nm polarization-insensitive semiconductor optical amplifier (SOA) was developed for use as a compact in-line optical amplifier. A very thin tensile-strained bulk structure was used for the active layer and active width-tapered spot-size converters (SSCs) were integrated on both input and output sides. The SOA module exhibited a high saturation output power of +17 dBm together with a low noise figure of 7 dB, large gain of 19 dB, and low polarization sensitivity of 0.2 dB for optical signals of 1550 nm wavelength. For the amplification of optical signals modulated at 10 Gb/s in the nonreturn-to-zero (NRZ) format, a good eye pattern without waveform distortion due to the pattern effect was obtained at an average output power of up to +12 dBm. Additionally, good amplification characteristics were demonstrated for the signal wavelength range corresponding to the C-band.     

Wavelength and power dependence of injected C-band laser on pumpconversion efficiency of L-band EDFA

The effect of wavelength and power of an injected C-band laser on the pump conversion efficiency of a L-band erbium-doped fiber amplifier was studied via numerical simulation and experiment. In the studied C-band wavelength range of 1530-1560 nm, for higher injected power with longer wavelength, the backward output amplified spontaneous emission power is compressed more; but the residual laser power is greater due to the smaller emission coefficient at longer wavelength. Thus there is a best choice for injection wavelength and power. With an injection of -2 dBm at 1550 nm, 4.3 and 2.5 dB of gain enhancement for -12 and -2.6 dBm input at 1586 nm were achieved, respectively     

Performance analysis of electro-absorption modulator-based multi-wavelength converter

This paper reports the performance analysis of multi-wavelength converter based on electro-absorption modulator at 10 Gb/s. It has been observed that the input signal wavelength converted into fourteen different wavelength and we observed the performance of converted wavelength only at 1552.02, 1550, 1553.99, 1542.03, 1546.03, 1556.02 and 1558 nm because the rest of converted wavelength quality has poor. The influence of two parameters such as input signal power (?30 to 30 dBm) and probe signal power (0, ?2, 2, 6.99, 10 dBm) of EAM on multi-wavelength conversion performance analyzed by measuring quality factor and converted output signal power. The best converted signal quality is obtained for 10 dBm input signal power with 6.99 dBm probe signal power for this multi-wavelength converter. Further, quality factor, conversion efficiency and extinction ratio are observed as the function of input signal power.     

All-optical frequency conversion in a traveling-wave semiconductorlaser amplifier

All-optical frequency conversion over the entire gain spectrum of a traveling-wave semiconductor laser amplifier is analyzed by numerical solution of a nonlinear wave equation system. The wavelength dependence of the gain coefficient g, the linewidth enhancement factor α, the differential gain dg/dN, and the gain saturation effect are contained in the model. The method yields a high conversion efficiency and a converted signal output power up to 10 dBm is obtainable. It is shown that the input signal power can vary by three orders of magnitude with nearly no degradation of the conversion efficiency. By means of the input powers, the conversion efficiency can be maximized. The dependence of the conversion efficiency is analyzed for fixed input powers. Simultaneous conversion of an optical data signal to several wavelengths is analyzed. The requirements for the output filter are outlined     

AlGaInAs-InP材料系1550nm偏振无关半导体光放大器

采用低压金属有机气相外延设备生长并制作了1550nm AlGaInAs-InP偏振无关半导体光放大器,有源区为3周期的张应变量子阱结构,应变量为-0.40%.器件制作成脊型波导结构,并采用7°斜腔结构以有效抑制腔面反射.经蒸镀减反膜后,半导体光放大器的自发辐射功率的波动小于0.3dB,3dB带宽为56nm.半导体光放大器小信号增益近20dB,带宽大于55nm.在1500～1590nm波长范围内偏振灵敏度小于0.8dB,峰值增益波长的饱和输出功率达7.2dBm.     

980 nm和1480 nm LD混合泵浦两段级联掺铒光纤放大器实验研究

采用两段级联掺铒光纤、９８０ｎｍ和１４８０ｎｍＬＤ混合泵浦方式，实验分析比较了内插光隔离器和内插光隔离－耦合环光路结构掺铒光纤放大器（ＥＤＦＡ）的增益、噪声系数和输出功率特性。研制出内插光隔离－耦合环的ＥＤＦＡ，在信号波长１５５３．５ｎｍ处，小信号增益为４２．８ｄＢ，噪声系数为４．４ｄＢ，输出功率为１５．２ｄＢｍ。     

Spectral dependence of gain and noise in erbium-doped fiberamplifiers

A two-level model of the erbium-doped fiber amplifier is used to analyze the dependence of the amplifier gain saturation, saturated output power, and excess noise factor on pump and signal wavelengths. Measured data are presented confirming that the dependence of the gain, output saturation power, and noise of erbium-doped fiber amplifiers on the signal and pump wavelength can be described by simple equations derived from the model     

Erbium-doped optical fiber amplifiers pumped in the 660- and 820-nmbands

State-of-the-art erbium (Er)-doped optical fiber amplifiers (EDFA's) pumped in the 660- and 820-nm bands are described. We have demonstrated highly efficient EDFA's incorporating optimized 664- and 827-nm pump wavelengths and an Er-doped high numerical aperture (NA) fiber with thermally diffused expanded core (TEC) fiber ends. Gain coefficients of 3.8 and 1.3 dB/mW at respective wavelengths of 664 and 827 nm were achieved at a signal wavelength of 1535 nm. Noise figures of 3.1 and 4.1 dB at respective pump wavelengths of 670 and 827 nm were obtained at a signal wavelength of 1535 nm. A highly efficient Er-doped fiber amplifier module, in which an AlGaInP visible laser diode (LD) was used as the pump source, was successfully developed as a practical application of this technology. A maximum overall gain coefficient of 3.0 dB/mW was achieved at a signal wavelength of 1535 nm. The EDFA module realized a maximum overall signal gain of 33 dB at 1535 nm with a saturated output power of -1 dBm. A maximum saturated output power of 3.9 dBm was obtained at a signal wavelength of 1552 nm. The present EDFA design using a low-cost laser diode for optical disk memory use and a high NA Er-doped fiber has great potential for providing inexpensive, high-performance EDFA's     

2-Gbit/s signal amplification at λ=1.53 μm in anerbium-doped single-mode fiber amplifier

The gain, saturation power, and noise of an erbium-doped single-mode traveling-wave fiber amplifier operating at a wavelength λ=1.53 μm are characterized. In continuous-wave (CW) measurements amplification at 2 Gbit/s was demonstrated with up to 17-dB gain for 1×10^-9 bit error rate at 1.531 μm and a 3-dB full bandwidth of 14 nm. From the determination of the fiber-amplifier's output signal-to-noise ratio versus input signal power during data transmission, it was concluded that, with signal levels used here, signal-spontaneous beat noise limited the receiver sensitivity improvement. With the fiber amplifier acting as an optical preamplifier of the receiver, the best sensitivity was -30 dBm, obtained after installing a polarizer at the fiber amplifier output to reject half of the applied spontaneous emission power. This sensitivity was 6 dB better than without the fiber amplifier, proving that the fiber amplifier can be used as a preamplifier     

1.55 μm polarisation independent semiconductor optical amplifierwith 25 dB fiber to fiber gain

Using a tapered in width square active waveguide and bulk InGaAsP/InP material we demonstrate a polarisation independent amplifier structure operating at 1550 nm with a reduced far-field divergence. Improvement of coupling efficiency enables us to achieve a 25 dB fiber to fiber gain together with 9 dBm fiber saturation output power for 150 mA bias current. A 200 ps gain recovery time allows fast gating or wavelength conversion     

Long wavelength vertical-cavity semiconductor optical amplifiers

This paper overviews the properties and possible applications of long wavelength vertical-cavity semiconductor optical amplifiers (VCSOAs). A VCSOA operating in the 1.3-μm wavelength region is presented. The device was fabricated using wafer bonding; it was optically pumped and operated in reflection mode. The reflectivity of the VCSOA top mirror was varied in the characterization of the device. Results are presented for 13 and 12 top mirror periods. By reducing the top mirror reflectivity, the amplifier gain, optical bandwidth, and saturation output power were simultaneously improved. For the case of 12 top mirror periods, rye demonstrate 13-dB fiber-to-fiber gain, 0.6 nm (100 GHz) optical bandwidth, a saturation output power of -3.5 dBm and a noise figure of 8.3 dB. The switching properties of the VCSOA are also briefly investigated. By modulating the pump laser, we have obtained a 46-dB extinction ratio in the output power, with the maximum output power corresponding to 7-dB fiber-to-fiber gain. All results are for continuous wave operation at room temperature     

A broad-band MQW semiconductor optical amplifier with high saturation output power and low noise figure

A broad-band semiconductor optical amplifier (SOA) that achieves both a high chip saturation output power and a low chip noise figure (NF) was developed by using a thin multiquantum well with low internal loss. The SOA exhibited a high chip saturation output power of >+19.6 dBm and a low chip NF of <4.5 dB over a 3-dB gain bandwidth of 120 nm (1450-1570 nm). For the amplification of optical signals modulated at 40-Gb/s nonreturn-to-zero format, a penalty-free amplification was confirmed up to an average chip output power of +18.1 dBm.     

28.3 dB gain 1.3 μm-band Pr-doped fluoride fiber amplifiermodule pumped by 1.017 μm InGaAs-LD's

A praseodymium (Pr)-doped fluoride fiber amplifier (PDFA) module that is pumped by strained quantum-well InGaAs laser diodes (LDs) is described. The amplifier module, consisting of a four LD pump configuration and a high NA Pr-doped fluoride fiber with low scattering loss, exhibits a maximum signal gain of 28.3 dB and a saturation output power of 6 dBm at a signal wavelength of 1.30 μm. It is shown to be the most promising module for the 1.3-μm-band optical amplifier     

双波长光纤光栅外腔半导体激光器中波长转换

提出了基于双波长光纤光栅外腔半导体激光器增益饱和效应的全光波长转换方案，特点是可将输入信号同时转换到激光器的2个波长上。在静态波长转换实验中，观察到了1554.8nm输入信号对激光器1531.5nm与1549.4nm波长输出功率的增益饱和作用。表明可实现输入信号到激光器的两个波长的同时转换。     

Quantum-Dot Semiconductor Optical Amplifiers

This paper reviews the recent progress of quantum-dot semiconductor optical amplifiers developed as ultrawideband polarization-insensitive high-power amplifiers, high-speed signal regenerators, and wideband wavelength converters. A semiconductor optical amplifier having a gain of > 25 dB, noise figure of < 5 dB, and 3-dB saturation output power of > 20 dBm, over the record widest bandwidth of 90 nm among all kinds of optical amplifiers, and also having a penalty-free output power of 23 dBm, the record highest among all the semiconductor optical amplifiers, was realized by using quantum dots. By utilizing isotropically shaped quantum dots, the TM gain, which is absent in the standard Stranski-Krastanow QDs, has been drastically enhanced, and nearly polarization-insensitive SOAs have been realized for the first time. With an ultrafast gain response unique to quantum dots, an optical regenerator having receiver-sensitivity improving capability of 4 dB at a BER of 10^-9 and operating speed of > 40 Gb/s has been successfully realized with an SOA chip. This performance achieved together with simplicity of structure suggests a potential for low-cost realization of regenerative transmission systems.     

一种新颖的基于AFMLF的双倍布里渊频移间隔的MWBEL

提出了一种基于非线性放大光纤环形镜(AFMLF)滤波器的双倍布里渊频移间隔的多波长掺铒光纤激光器(MWBEL)环形腔结构,其中非线性放大光纤环形镜被用作滤波器。当980nm泵浦功率为10.29dBm、可调激光源(TLS)的中心波长为1 563nm、功率为-3dBm时,得到了波长间隔为0.16nm的12阶偶数阶多波长激光输出。同时,还研究了980nm抽运功率、偏振控制器(PC)以及可调激光源的中心波长对输出斯托克斯光波数的影响。     

基于光纤环形镜的L-波段掺铒光纤放大器增益的提高

提出了一种基于光纤环形镜作为反射器的反射式L-波段掺铒光纤放大器(EDFA)结构。光纤环形镜不但可以反射后向放大自发辐射(ASE)作为二次抽运源，而且还可以反射信号，使信号得到二次放大。当抽运功率为115mW时。在1570～1605nm波长范围内，反射式L-波段掺铒光纤放大器的平坦小信号增益达到29．14dB，与前向抽运方式L-波段掺铒光纤放大器相比(保持平坦性不变)。增益提高了5．33dB。分别输入波长为1580nm和1600nm的信号，反射式L-波段掺铒光纤放大器的饱和输出功率为7．63和7．6dBm．与前向抽运方式L-波段掺铒光纤放大器相比分别提高了2．98和3dB。     

采用半导体光放大器的多波长光纤环形激光器

报道了一种插入马赫-曾德尔(M-Z)光纤干涉仪的半导体光放大器(SOA)多波长光纤环形激光器,实现了信道间隔为100 GHz的稳定的多波长连续光激射,其输出光谱3 dB带宽为19.5 nm,消光比大于30 dB.其中在17.9 nm范围内获得了22个波长的连续光,功率不平坦度为1.2 dB,总输出功率为5.1 dBm.对该结构的多波长激光器输出光谱宽,不同波长间功率波动小的特性进行了分析,提出在较低环腔损耗下,半导体光放大器的增益饱和及四波混频(FWM)效应的共同作用使环腔内多波长光功率获得自动均衡;并对实验观测到的激光器输出光谱带宽及中心波长随半导体光放大器驱动电流降低或环腔损耗增大而减小的现象进行了讨论.