TiO_2纳米管阵列的制备及其光电化学性质研究

以H3PO4/NH4F水溶液为电解液,在20V下阳极氧化钛片1h制得TiO2纳米管阵列,其管径约为100nm,管长约800nm。经不同温度煅烧后,利用FESEM、XRD和光电化学分析测试系统分别对纳米管阵列的形貌结构、晶相组成以及光电化学性质进行研究。光电化学特性研究结果表明600℃热处理后性能最佳。当前体系中所制备的薄膜结构上高度有序,光电化学性质优良,作为光电极材料在太阳能光电转换、光催化等领域具有广阔的应用前景。     

硅纳米线阵列光阳极的制备及其光电转换性能研究

结合光刻和金属援助硅化学刻蚀法成功地制备出了用于光伏型光电化学池的图形化硅纳米线阵列光阳极,并表征和研究了其光电转换性能.扫描电子显微镜和漫反射光谱测试表明光阳极表面为多孔状,在300nm - 1000nm的光谱范围之内光反射率低于5％.基于该光阳极的光电化学池具有明显的光响应,光电转换效率为0.33％.通过光电转换过...     

SrTiO_3/TiO_2复合薄膜的制备及其光电性能研究

采用电化学-水热技术,以Sr(OH)_2为锶源,TiO_2纳米管阵列为钛源,制备了SrTiO_3/TiO_2阵列复合薄膜,考察了水热时间对薄膜的组成、结构和光电性能的影响。结果表明,水热2h可以得到结晶度高、具有良好光吸收性能和光电转换性能的SrTiO_3/TiO_2复合薄膜,其光电流密度高达55μA/cm~2,是纯TiO_2纳米管阵列膜的2.5倍。     

ZnO纳米线阵列修饰对材料表面浸润性调控

采用溶胶-凝胶法制备了ZnO薄膜,利用溶剂热沉积法获得大面积均匀ZnO纳米线阵列。通过对水在ZnO材料表面的浸润性研究,发现薄膜材料表面的粗糙度对ZnO膜亲水性有增强作用,而周期性ZnO阵列微结构表面可以实现其疏水性质增强效果。同时从理论上分析了这两种现象的物理机制,讨论了空气填隙对ZnO纳米线阵列表面的浸润性质的敏感性。制备出ZnO纳米线阵列的表观接触角约为103°,具有较强的疏水性质,可为进一步的ZnO光流控研究提供实验基础。     

阳极氧化法制备TiO2纳米管阵列及其光电性能研究

采用阳极氧化法在钛片上制备了TiO2纳米管阵列光电极，利用扫描电子显微镜（SEM）和X射线衍射仪（xRD）对TiO2纳米管的形貌和结构进行了表征，详细考察了氧化工艺参数对纳米管阵列形貌的影响，并通过稳态光电响应技术对TiO2纳米管电极的光电化学性能进行了研究．结果表明，在1wt％HF电解液中，控制氧化电压为20V，反应30min后，在Ti表面获得了垂直导向的TiO2纳米管阵列，孔径约为90nm，管壁厚度约为10nm．经600℃退火处理后，TiO2纳米管阵列为锐钛矿型与金红石型的混晶结构，此时电极的光电性能最佳，与TiO2纳米多孔膜电极相比，光电性能大幅提高．     

鸭跖草色素敏化TiO_2纳米管太阳能电池的研究

以高度有序TiO2纳米管阵列作为光阳极,鸭跖草色素作为敏化剂制备了天然染料敏化太阳能电池。阳极氧化6h制备的TiO2纳米管作为电极的电池的光电转换效率约达0.52%,短路电流为1.53mA/cm2。比较不同管长TiO2纳米管阵列对电池的光电性能的影响。利用紫外-可见光光谱仪研究鸭跖草色素的光吸收性能。利用电化学阻抗谱分析电池的界面阻抗。研究表明适当提高TiO2纳米管长度可以有效提高天然染料敏化太阳能电池的光电性能。     

电沉积FeS2(Pyrite)薄膜的制备与性能研究

采用含铁和硫元素的水溶液电沉积制备了FeS2 薄膜,并在硫氛围中退火获得样品。研究了样品的微结构和光吸收以及电学性质。结果表明薄膜样品晶相单一,晶粒尺寸约为100nm,光吸收系数随沉积时间增加略有增大,电阻率随薄膜沉积时间的增加而减小。为防止薄膜脱落,在沉积过程中使用了阳离子表面活性剂,得到了均匀且粘附性较强的膜。     

Ti O2纳米管阵列基底退火温度对CdSe/Ti O2异质结薄膜光电化学性能的影响

通过电化学沉积法以TiO2纳米管阵列(TNTs)为基底制备CdSe/TiO2异质结薄膜。研究TiO2纳米管阵列基底不同退火温度(200,350,450,600℃)对CdSe/TiO2异质结薄膜光电化学性能的影响。采用SEM,XRD,UV-Vis,电化学测试等方法对样品的微观形貌、晶体结构、光电化学性能等进行表征。结果表明:立方晶型的CdSe纳米颗粒均匀沉积在TiO2纳米管阵列管口及管壁上。TiO2纳米管阵列未经退火及退火温度为200℃时,为无定型态,在TiO2纳米管阵列上沉积的CdSe纳米颗粒数量少,尺寸小,异质结薄膜光电性能较差,光电流几乎为零。随着退火温度升高到350℃,TiO2纳米管阵列基底开始向锐钛矿转变;且沉积在TiO2纳米管上的CdSe颗粒增多,尺寸增大,光电化学性能提高。退火温度为450℃时光电流值达到最大,为4.05mA/cm^2。当退火温度达到600℃时,TiO2纳米管有金红石相出现,CdSe颗粒变小,数量减少,光电化学性能下降。     

AgBiS2/TiO2纳米复合材料的制备及其光生阴极保护性能研究

为了开发一种更加清洁、高效、价廉、低耗能的阴极防护材料,通过电化学阳极氧化法和连续离子层吸附反应法制备了一种Ag BiS2/Ti O2纳米管阵列复合物材料。采用X射线衍射(XRD)、X射线光电子能谱(XPS)、扫描电镜(SEM)和紫外-可见漫反射(UV-vis DRS)分别表征了复合材料的化学组成、表面形貌以及光学吸收性能;通过电流密度、开路电位、Tafel极化曲线评价了AgBiS2/Ti O2纳米管阵列薄膜复合材料的光电转化性能和光生阴极保护性能。结果表明:AgBiS2修饰Ti O2纳米管阵列后的复合物薄膜,可见光照下表现出优异的光电化学性能,304不锈钢的开路电位从-183 m V(vs SCE,下同)降至约-950 m V,闭光后,电极电位可在-800 m V保持12 h以上。与纯Ti O2纳米阵列薄膜相比,AgBiS2/Ti O2纳米复合物薄膜对304不锈钢在3.5%(质量分数) NaCl腐蚀介质中具有更优异的光生阴极保护效果。     

Cu_2O敏化ZnO纳米棒的制备及其对光电性质的影响

以透明导电玻璃(FTO)为基底,采用电化学沉积法制备了Cu_2O敏化的ZnO纳米棒阵列复合薄膜。利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、透射电镜(TEM)、高分辨电镜(HRTEM)、电化学工作站研究了不同Cu_2O沉积时间对复合薄膜的晶体结构、形貌、光电性质的影响。结果表明,电化学沉积的Cu_2O纳米晶可以与ZnO纳米棒形成异质结,提高ZnO纳米薄膜的光电转换效率,当Cu_2O的沉积时间为5min时,Cu_2O敏化ZnO纳米棒薄膜的光电转换效率最高。     

100nm厚铜薄膜的拉伸性能

以聚酰亚胺为基体制备了厚度为100nm的金属铜薄膜,利用基体的高弹性变形测定了铜薄膜的屈服应力,并研究了铜薄膜的形变与断裂行为．结果表明：使用铜薄膜／聚酰亚胺复合体能够测量出铜薄膜的屈服强度,厚度100nm的铜薄膜的屈服强度明显高于厚铜膜的屈服强度,厚度100nm铜薄膜的断裂为Ⅰ型沿晶断裂．超薄铜薄膜较高的屈服强度归因于小尺度材料中纳米量级的薄膜厚度和晶粒对位错运动的约束作用．     

Effects of composition and thickness on the electrical properties of indium oxide/tin oxide multilayered films

Indium oxide/tin oxide multilayered films with a 2 nm pair thickness were deposited on glass substrates at temperatures lower than 100° C by an ion-beam sputtering method. The structure, electrical properties and visible transmissivity were investigated as a function of composition and the total thickness on as-deposited and annealed films. X-ray diffraction analysis showed that the as-deposited 200 nm thick film (with 0.15 nm tin oxide layers) was partially crystalline and films thinner than 100 nm were amorphous or microcrystalline. The roomtemperature resistivity of as-prepared films increased with the increase of an average tin oxide layer thickness from ∼0.05 to ∼0.3 nm (ideal monolayer thickness) under a constant total thickness ∼100 nm. We observed a decrease of the Hall mobility with the increase of the total film thickness from 10 to 200 nm in as-deposited samples containing 0.15 nm tin oxide layers.     

Transparent conductive film having sandwich structure of gallium-indium-oxide/silver/gallium-indium-oxide

New transparent conductive films having the sandwich structure of gallium-indium-oxide/silver/gallium-indium-oxide (GIO/Ag/GIO) were prepared by conventional magnetron sputtering method at ambient substrate temperature. The electrical and optical properties of the films were compared with those of conventional indium-tin-oxide (ITO) films and ITO/Ag/ITO sandwich films. The GIO/Ag/GIO (40 nm/8 nm/40 nm) sandwich films, in which the GIO film was deposited using a GIO ceramic target with In content [In/(Ga + In)] of 10 at.%, exhibited a low sheet resistance of 11.3 Ω/sq and a large average transmittance of over 92.9% in the visible region (400-800 nm). This GIO/Ag/GIO films also exhibited a novel characteristic of transparency in the ultraviolet region; they showed high transmittance of 82.2% at the wavelength of 330 nm and 40.8% at the wavelength of 280 nm, which was not shown in the ITO films and the ITO/Ag/ITO sandwich films. The GIO/Ag/GIO sandwich films are useful as transparent electrode for emitting devices of ultraviolet radiation because of both their high conductivity and high transparency in the ultraviolet region.     

Chemical bath deposition of SnS thin films on ZnS and CdS substrates

We illustrate that Tin sulfide (SnS) thin films of 110–500 nm in thickness may be deposited on ZnS and CdS substrates to simulate the requirement in developing window-buffer/SnS solar cells in the superstrate configuration. In the chemical bath deposition reported here, tin chloride and thiosulfate are the major constituents and the deposition is made at 25 °C. In a single deposition, film thickness of 110–170 nm is achieved and in two more successive depositions, the film thickness is 450–500 nm. The thicker films are composed of vertically stacked flakes, 100 nm across and 10–20 nm in thickness. The Sn/S elemental ratio is ~1 for the films 110–170 nm in thickness, but it slightly increases for thicker films. The crystalline structure is orthorhombic, similar to the mineral herzenbergite, and with crystallite diameters 13 nm (110–170 films) and 16 nm (450–500 nm films). The Raman bands at 94, 172 and 218 cm^?1 further confirm the SnS composition of the films. The optical band gap of SnS is 1.4–1.5 eV for the thinner films, but is 1.28–1.39 eV for the thicker films, the decrease being ascribed to the increase in the crystallite diameter. Uniform pin-hole free SnS thin films were successfully grown on two different substrates and can be applied in solar cell structures.     

Structure and optical properties of evaporated films of vanadium

In the present work, the interpretation of the structure, nucleation and growth of Vanadium films will be studied. Film structure was inferred from transmission electron diffraction and microscopy of vanadium films evaporated simultaneously onto freshly cleaved rocksalt and carbon substrate. The investigated films were from about 10 to 80 nm thick, and the rate of the deposition was fixed at 3 nm sec-' throughout this work. The optical constants were determined for vanadium from transmission measurements on vacuum-evaporated polycrystalline thin films at room temperature in the infrared range. Transmission measurements were made on films in the thickness range 100 to 150 nm.     

Long-range surface plasmon polariton waveguides containing very thin spin-coated silver films

We fabricated very thin solid silver films with thicknesses below 50 nm using a spin coating method. An aqueous silver ionic complex solution was spin-coated and then thermally cured for a few minutes at a low temperature. The properties of the spin-coated silver films were compared to the properties of silver films deposited by thermal evaporation. The spin-coated thin silver films possessed silver crystallinity and a surface roughness of ~ 2.83 nm, while the thermally evaporated thin silver films also possessed silver crystallinity with a surface roughness of ~ 2.44 nm. Long-range surface plasmon polariton (LR-SPP) waveguides fabricated by both spin coating and thermal evaporation were also characterized and compared. The propagation losses of the 23 nm thick spin-coated and the 19 nm thick evaporated LR-SPP waveguides with strip widths of 7 μm were 3.6 and 4.2 dB/cm, respectively, and their coupling losses were 1.4 and 1.0 dB/2facets, respectively. The use of the spin coating method is a very cost effective solution because the films can be formed at low temperature in a short period of time without requiring a vacuum system. In addition, there are many potential applications of using spin-coated very thin solid silver films in LR-SPP waveguides and nano electrical circuit patterns.     

Effect of thickness on the properties of FeAlN films

The magnetic properties, microstructure, and morphology of thin nanocrystalline FeAlN films synthesized by RF magnetron sputtering were studied as dependent on the film thickness. The best soft magnetic properties were observed for the films with thicknesses above 800 nm. These films consist predominantly of nanocrystalline α-Fe particles with an average size of ∼15 nm and are characterized by crystal lattice expansion in the (110) plane approaching a critical level of 0.28%. FeAlN films with a thickness of 1000 nm are characterized by μ₁ ∼ 2000.     

基底温度对直流溅射Nb掺杂TiO2薄膜性能的影响

采用陶瓷靶直流磁控溅射,以玻璃为基底制备2.5wt%Nb掺杂TiO2薄膜,控制薄膜厚度在300~350 nm,研究了不同基底温度下所制得薄膜的结构、形貌和光学特性.XRD分析表明,基底温度为150℃、250℃和350℃时,薄膜分别为非晶态、锐钛矿(101)和金红石相(110)结构.基底温度250℃时,锐钛矿相薄膜的晶粒尺寸最大,约为32 nm.薄膜表面形貌的SEM分析显示,薄膜粗糙度和致密度随基底温度升高得到改善.薄膜的平均可见光透过率在基底温度为250℃以内约为70%,随基底温度升高至350℃,平均透过率下降为59%,金红石相的存在不利于可见光透过.Nb掺杂TiO2薄膜的光学带宽在3.68~3.78 eV之间变化.基底温度为250℃时,锐钛矿相薄膜的禁带宽度最大,为3.78 eV.     

聚乳酸表面处理的AFM观察及对细胞粘附性的影响

利用NaOH对溶液浇铸法制备的聚L-乳酸膜（PLLA）进行不同时间的表面处理,采用接触角仪和原子力显微镜（AFM）对处理前、后的材料表面进行亲水性和形貌表征,并初步研究了表面处理的材料对细胞粘附性的影响.结果表明,NaOH处理后的PLLA膜的亲水性明显改善,并且其表面平均粗糙度（Ra）由20 nm增加到40 nm～150 nm.成纤维细胞在改性后的材料表面的粘附和生长较改性前有了很大提高。     

TeOx Thin Films for Write-Once Optical Recording Media

TeOx thin films were prepared by vacuum evaporation of TeO2 powder. Structural characteristic and surface mor-phology of the as-deposited films was analyzed by using X-ray photoelectron spectroscopy, transmission electron microscopy, X-ray diffractometer and atomic force microscopy. It was found that the films represented a two component system comprising Te particies dispersed in an amorphous TeO2 matrix. The dispersed Te particies were in a crystalline state. The TeOx films showed a finely granular structure and a rough surface. Results of the statie recording test showed that the TeOx films had good writing sensitivity for short-wavelength laser beam (514.5 nm). Primary results of the dynamic test at 514.5 nm were also reported. The TeOx films were suitable for using as a blue-green wavelength high density optical storage medium.