喷雾热分解法制备ITO薄膜及其光电性能研究

采用自制的喷雾热分解装置在玻璃衬底上制备ITO薄膜,并对实验条件进行了正交设计,以考察制备ITO薄膜的优良条件,结果表明,影响ITO薄膜光电性能的主要因素是基板温度。制备ITO薄膜的优化条件为：基板温度300℃,载气气流速度1L·min^-1,退火温度540℃,溶液配比为铟锡比10：1,喷嘴与基板距离8cm,薄膜沉积时间3．5min,相应的透光率为97％,方块电阻3875Ω／。     

Ni掺杂TiO2薄膜的甩胶喷雾热分解法制备和自清洁性能的研究

以钛酸丁脂（Ti（C4H9O）4）为先驱体,硝酸镍（NiNO3）为掺杂物,采用甩胶喷雾热分解方法在玻璃衬底上制备出了镍掺杂TiO2自清洁薄膜,通过扫描电镜（SEM）、X射线衍射（XRD）、紫外-可见透射光谱（UV-Vis）、光催化和亲水性能测定等手段对样品进行分析,结果表明,500r/min为理想衬底转速,350℃是理想的衬底沉积温度,500℃是理想的样品退火温度。随着镍掺杂量的不断增加,TiO2薄膜的亲水性能也越好,当镍掺杂量达2%-3%时,TiO2薄膜的亲水性能达到最好。     

SnO2:F导电薄膜的制备方法和性能表征

采用喷雾热分解(Spray pyrolysis)方法,以NH4F、SnCl2·2H2O为原料,对反应液配方进行了优化,在普通玻璃衬底上制备出了光电性能优良的掺F二氧化锡透明导电薄膜.采用X射线衍射仪(XRD)、扫描电镜(SEM)、紫外-可见分光光度计(UV/VIS)对薄膜的结构、形貌、光学、电学特征进行了表征和分析.结果表明:在衬底温度为500℃, NH4F/SnCl2·2H2O的质量百分比为20%,喷涂时间为15s时掺F二氧化锡薄膜的方块电阻最低达到6.2Ω/□,可见光透射率为86.95%,且薄膜晶粒均匀,表面形貌平整致密.     

甩胶喷雾热分解方法制备钛酸钡薄膜的研究

以乙酸钡、钛酸四丁酯为主要原料制备钛酸钡溶液,采用甩胶喷雾热分解方法制备了BaTiO3薄膜。制备条件为喷嘴距离2-3cm,转速4000转,通过对溶液的DSC-TG图谱分析,确定薄膜的干燥温度100℃左右,热处理温度700℃左右,实验表明,应用甩胶喷雾热分解方法能够成功制备较好的BaTiO3薄膜,600℃时,BaTiO3已经完全形成了钙钛矿结,700℃时薄膜致密均匀。     

电子束蒸发技术制备ITO薄膜的光电特性和微结构研究

利用电子束蒸发技术制备ITO透明导电膜,研究了衬底温度,氧分压以及沉积速率的变化对薄膜光电特性的影响,结果表明在衬底为350℃,氧分压为2.0×10-2 Pa,沉积速率在3 nm/min的条件下制得透过率T81%,电阻率p=1.9×10-3 Ω·cm的ITO透明导电膜.另外我们通过XRD对样品的微结构进行了分析,发现薄膜晶格常数和晶粒大小随制备条件的不同,也有显著的规律变化.     

用甩胶喷雾热分解方法制备羧酸铕配合物光致发光薄膜的研究

配置羧酸铕配合物溶于二甲基亚砜中形成溶液,经TG确定甩胶喷雾热分解成膜温度为120"C,制备薄膜设备为自制,通过实验摸索各实验参数,成功制备了羧酸铕配合物光致发光薄膜.用320nm的紫外光照射,测量633nm激发红光强度发现速随膜厚增加激发光强接近粉体.SEM显示形成的薄膜并不理想,但不影响发光.650℃对样品退火,没有红色激发光谱.     

柔性ITO衬底上铜酞菁薄膜有序生长的X射线衍射研究

采用石英晶体微天平实时监测薄膜生长速率,通过控制衬底温度与薄膜生长速率,在柔性ITO导电衬底上真空蒸发沉积了铜酞菁薄膜.X射线衍射分析表明,适当提高衬底温度与薄膜生长速率,可促进薄膜的有序生长.当衬底温度为90℃,生长速率为10nm/min时,薄膜的有序度最高,薄膜晶型呈(相和(200)晶面.     

脉冲激光沉积ZrW2O8薄膜的制备和性能

采用脉冲激光沉积法在石英基片上沉积制备了ZrW2O8薄膜.用X射线衍射仪(XRD)、原子力显微镜(AFM)研究了不同衬底温度对薄膜结构组分、表面粗糙度和形貌的影响,用台阶仪和分光光度计测量薄膜的厚度和不同衬底温度下制备薄膜的透射曲线,用变温XRD分析了ZrW2O8薄膜的负热膨胀特性.实验结果表明:在衬底温度为室温、550℃和650℃下脉冲激光沉积的ZrW2O8薄膜均为非晶态,非晶膜在1200℃保温3min后淬火得到立方相ZrW2O8薄膜;随着衬底温度的升高,ZrW2O8薄膜的表面粗糙度明显降低;透光率均约为80%,在20～600℃温度区间内,脉冲激光沉积制备的ZrW2O8薄膜的负热膨胀系数为-11.378×10-6 K-1.     

衬底材料对空心阴极沉积氢化微晶硅薄膜的影响

本文中,我们采用空心阴极等离子体增强化学气相沉积(MHC-PECVD)在玻璃、表面溅射氧化铟锡(ITO)的玻璃(玻璃+ITO)以及表面溅射ITO的聚酰亚胺(PI+ITO)柔性衬底上沉积氢化微晶硅(μc-Si:H),研究不同衬底材料对微晶硅薄膜性质的影响。我们发现在PI+ITO衬底上沉积薄膜的结晶率(Xc)最小,且结晶率最大值时的温度依赖沉底材料:对于PI+ITO衬底来说,结晶率最大值时的温度为200℃,而对于玻璃和玻璃+ITO衬底来说,这个温度会在250℃~300℃之间浮动。我们认为PI+ITO衬底上薄膜较低的结晶率与其较高的热膨胀系数(CTE)以及小分子和气体的释放有关。     

空间太阳电池玻璃盖板表面超薄ITO防静电层的设计及制备工艺

ITO/MgF2复合薄膜既具有较好的表面导电性能又具有较高的透过率,可应用于空间太阳电池玻璃盖板表面。文章主要对ITO/MgF2复合薄膜中表层的超薄ITO薄膜进行了研究。利用TFCalc软件模拟了ITO薄膜厚度对ITO/MgF2复合薄膜光学性能的影响,根据模拟结果采用电子束蒸发法在衬底上依次沉积MgF2薄膜和氧化铟锡(ITO)薄膜,研究了ITO薄膜工艺参数(沉积速率、沉积温度和工作气压)和ITO薄膜厚度对ITO/MgF2复合薄膜光电性能及微观结构的影响。当ITO薄膜沉积速率为0.05nm/s、沉积温度为400℃、工作气压为2.3×10~(-2) Pa、厚度为10nm时,表层ITO薄膜基本连续,其方块电阻(1.94kΩ/)已符合设计需求,ITO/MgF2复合薄膜在可见光区间(400~800nm)的平均透过率达到89.00%。     

SiO2层上沉积的纳米多晶硅薄膜及其特性

采用低压化学气相沉积(LPCVD)系统以高纯SiH4为气源,在p型10.16 cm<100>晶向单晶硅衬底SiO2层上制备纳米多晶硅薄膜,薄膜沉积温度为620℃,沉积薄膜厚度分别为30 nm、63 nm和98 nm.对不同薄膜厚度的纳米多晶硅薄膜分别在700℃、800℃和900℃下进行高温真空退火.通过X射线衍射(XRD)、Raman光谱、扫描电子显微镜(SEM)和原子力显微镜(AFM)对SiO2层上沉积的纳米多晶硅薄膜进行特性测试和表征,随着薄膜厚度的增加,沉积态薄膜结晶显著增强,择优取向为<111>晶向.通过HP4145B型半导体参数分析仪对沉积态掺硼纳米多晶硅薄膜电阻I-V特性测试发现,随着薄膜厚度的增加,薄膜电阻率减小,载流子迁移率增大.     

喷雾热解法制备掺氟氧化锡导电玻璃及其性能

采用喷雾热解法,以四氯化锡和氟化铵为原料、喷瓶为雾化装置,在载玻片上制得氟掺杂二氧化锡(FTO)透明导电薄膜。运用XRD、SEM、紫外-可见分光光度计和四探针测试仪分别对薄膜进行了表征。研究了喷涂次数、衬底温度、前体浓度、掺杂浓度和醇水比对FTO薄膜光电性能的影响。结果表明,当衬底温度为500℃,SnCl4.5H2O浓度为0.81mol/L,NH4F浓度为0.1mol/L,醇水比为8:2,喷涂100次时,薄膜的光电性能较好,其方块电阻为13Ω/□,平均透光率为79%。     

Preparation of ITO films using a spray pyrolysis solution containing an acetylacetone chelating agent

Indium tin oxide (ITO) films were deposited on soda-lime glass substrates by the spray pyrolysis method using a spray solution of InCl₃·3H₂O as a precursor, SnCl₄·5H₂O as a dopant and acetylacetone (AcAcH) as a chelating agent. The effect of the addition of AcAcH to the spray solution on the surface morphology of the ITO film was investigated. The surface quality of the film prepared from the spray solution with AcAcH was better than that without AcAcH. The ITO film with the thickness of 230 nm, using the spray solution with AcAcH, exhibited the lowest resistivity of 4.75 × 10^?4 Ω·cm and higher optical transmittance of 85 %, respectively.     

衬底温度和氧分压对ZnO：Al薄膜性能的影响研究术

以掺杂质量数为2％的Al2O3：ZnO为靶材,用激光脉冲沉积法,通过改变氧压和衬底温度调整薄膜的性能,制备得到相对优质的ZnO：Al薄膜,采用x射线衍射、紫外-可见分光光度计和霍尔效应测试仪等表征其物相、光学和电学性能,最终得到电阻率为1．27×10^-3Ω／cm^-3、平均光透过率超过80％的透明导电薄膜。     

超薄Ni81Fe19薄膜的各向异性磁电阻及磁性能

利用磁控溅射方法制备了一系列超薄Ta(5nm)/Ni81Fe19(20nm)/Ta(3nm)磁性薄膜。着重研究了基片温度、缓冲层厚度对Ni81Fe19薄膜各相异性磁电阻(AMR)及磁性能的影响。利用X射线衍射仪分析了薄膜结构、晶粒取向;用四探针技术测量了薄膜的电阻率和各向异性磁电阻;用FD-SMOKE-A表面磁光克尔效应试验系统测量了薄膜的磁滞回线。结果表明:在基片温度为400℃时制备的Ni81Fe19薄膜具有较大的各向异性磁电阻效应和较低的磁化饱和场,薄膜最大各向异性磁电阻为3.5%,最低磁化饱和场为739.67A/m。基片温度为500℃制备的薄膜,饱和磁化强度Ms值最大。随着缓冲层厚度x的增加,坡莫合金薄膜的AMR值先变大后减小,在x=5nm时达到最大值。     

PZT薄膜的MOCVD制备技术

采用直接液体榆运-金属有机化合物化学气相沉积技术（DLI-MOCVD）制备Pb（ZrxTi1-x）O3薄膜（PZT薄膜）,并进行了相关研究,通过调节MOCVD中影响PZT质量的主要工艺参数（温度、压力、系统的气体（Ar,O2）流量、衬底转速、蠕动泵速）,制备不同组分PZT薄膜（均匀性≥±95％,尺寸为2．54—20．32cm（1—8in）,厚度为50—500nm）．经XRD测试可见,PZT薄膜已形成钙钛矿结构．用SEM对其表面进行分析,结果表明,PZT薄膜表面致密均匀．     

Deposition and optoelectronic properties of ITO (In<Subscript>2</Subscript>O<Subscript>3</Subscript>:Sn) thin films by Jet nebulizer spray (JNS) pyrolysis technique

Nanocrystalline ITO thin films were deposited on glass substrates by a new spray pyrolysis route, Jet nebulizer spray (JNS) pyrolysis technique, for the first time at different substrate temperatures varying from 350 to 450 °C using a precursor containing indium and tin solution with 90:10 at% concentration. The structural, optical and electrical properties have been investigated as a function of temperature. X-ray diffraction analysis showed that the deposited films were well crystallized and polycrystalline with cubic structure having (222) preferred orientation. The optical band gap values calculated from the transmittance spectra of all the ITO films showed a blue shift of the absorbance edge from 3.60 to 3.76 eV revealing the presence of nanocrystalline particles. AFM analysis showed uniform surface morphology with very low surface roughness values. XPS results showed the formation of ITO films with In³⁺ and Sn⁴⁺ states. TEM results showed the nanocrystalline nature with grain size about 12-15 nm and SAED pattern confirmed cubic structure of the ITO films. The electrical parameters like the resistivity, mobility and carrier concentration are found as 1.82 × 10⁻³ Ω cm, 8.94 cm²/Vs and 4.72 × 10²⁰ cm⁻³, respectively for ITO film deposited at 400 °C. These results show that the ITO films, prepared using the new JNS pyrolysis technique, have the device quality optoelectronic properties when deposited under the proposed conditions at 400 °C.     

Structure and electrical properties of ITO thin films deposited at high rate by facing target sputtering

High rate deposition of ITO thin films at a low substrate temperature was attempted by using a facing target sputtering (FTS) system. Deposition rate as high as 53 nm/min was realized on polycarbonate film substrate of 80-μm thickness. When the film was deposited at a deposition rate above 80 nm/min, polycarbonate film substrate was thermally damaged. The film deposited by FTS has much smaller compressive film stress than the film deposited by conventional magnetron sputtering. The film stress was reduced significantly by increasing the sputtering gas pressure and stress-free films can be obtained by adjusting the sputtering gas pressure. This may be mainly caused by the fact that bombardment by high energy negative oxygen ions to substrate surface during deposition can be completely suppressed in the FTS. Film structure and electrical properties changed little with substrate position, and uniform films were obtained by the FTS.