共查询到18条相似文献,搜索用时 109 毫秒
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随着半导体技术的不断发展,集成电路的线宽在不断减小,对硅抛光片表面质量的要求也越来越高,为使芯片上的器件功能正常,避免硅片制造中的沾污是绝对必要的。传统的RCA清洗方法已不能满足其需求。因此,必须发展新的清洗方法。本文对传统的RCA清洗方法进行了简单的介绍,在此基础上,介绍新发展的HF/O3清洗法,从而对450mm硅片清洗方法的未来发展方向进行了简单论述。 相似文献
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本文主要对数据清洗问题进行综述。给出数据清洗的定义和对象,简单介绍数据清洗的基本原理和数据清洗的过程,针对不同清洗对象的数据清理方法,清洗后数据的评价要求,并对今后数据清洗的研究方向和应用进行展望。 相似文献
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高楼壁面清洗机器人及相关技术的研究 总被引:3,自引:0,他引:3
综述了近年来国内外高楼壁面清洗机器人的研究发展概况,并进行了技术难点分析。重点介绍了一种结构简单的单吸盘清洗爬壁机器人,据此开发出的双轮式及双履带式爬壁机器人可用于对瓷砖和玻璃壁面进行清洗。 相似文献
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杨斌 《计算机光盘软件与应用》2011,(17)
对人脸识别进行了简单的描述,然后对人脸识别的传统及新近技术进行技术与应用的介绍。首先介绍人脸识别的概念及其发展历史,随后对人脸识别技术方法发展过程中一些传统方法进行阐述,继而对新近发展的新技术进行了探讨;最后介绍人脸识别技术的应用现状。 相似文献
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本文综述了硅片传输机器人的发展历史,探讨了硅片传输机器人的典型结构,分析了硅片传输机器人的研究现状,并介绍了硅片传输机器人的典型产品. 相似文献
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介绍了一种新颖的微创手术式硅微机械加工(MISSM)技术,该技术充分利用(111)硅片的晶向分布和各向异性湿法腐蚀的特性。通过在单晶硅片表面制作一系列微型释放窗口来定义结构的轮廓及尺寸,实现在单晶硅片内部选择性可自停止腐蚀技术,制作出不同结构尺寸的腔体。同时,结合不同器件结构设计的需求,缝合微型释放窗口并进行后续工艺制作及最终可动结构释放。该技术采用微创手术式单硅片单面体硅工艺替代传统的表面微机械工艺,制作工艺简单,既具有单硅片单面加工的优势又便于与IC工艺兼容。文章详细讲述了微创手术式三维微机械结构的成型机理和工艺流程,并针对其关键技术进行了系统的分析,取得了令人满意的结果。 相似文献
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高层建筑清洗机器人控制软件设计 总被引:1,自引:0,他引:1
本文对高层建筑玻璃幕墙清洗机器人进行了简单介绍,并对控制软件结构特点进行了讨论,以此为基础 在文章的最后对软件结构中的关键技术进行了详细的说明。 相似文献
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介绍一种硅纳米线制作方法.在SOI顶层硅上制作硅纳米梁,通过离子注入形成pnp结构,利用新发现的没有特殊光照时BOE溶液腐蚀pn结n型区域现象,结合BOE溶液氧化硅腐蚀,实现硅纳米线制作.制作完全采用传统MEMS工艺,具有工艺简单,成本低,可控,可靠性好,可批量制作等优点.利用该方法制作出了厚50 nm,宽100 nm的单晶硅纳米线,制作的纳米线可用于一维纳米结构电学性能研究、谐振器研究等. 相似文献
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Motivated by quantification of micro-hydrodynamics of a thin liquid film which is present in industrial processes, such as
spray cooling, heating (e.g., boiling with the macrolayer and the microlayer), coating, cleaning, and lubrication, we use
micro-conductive probes and confocal optical sensors to measure the thickness and dynamic characteristics of a liquid film
on a silicon wafer surface with or without heating. The simultaneous measurement on the same liquid film shows that the two
techniques are in a good agreement with respect to accuracy, but the optical sensors have a much higher acquisition rate up
to 30 kHz which is more suitable for rapid process. The optical sensors are therefore used to measure the instantaneous film
thickness in an isothermal flow over a silicon wafer, obtaining the film thickness profile and the interfacial wave. The dynamic
thickness of an evaporating film on a horizontal silicon wafer surface is also recorded by the optical sensor for the first
time. The results indicate that the critical thickness initiating film instability on the silicon wafer is around 84 μm at
heat flux of ~56 kW/m2. In general, the tests performed show that the confocal optical sensor is capable of measuring liquid film dynamics at various
conditions, while the micro-conductive probe can be used to calibrate the optical sensor by simultaneous measurement of a
film under quasi-steady state. The micro-experimental methods provide the solid platform for further investigation of the
liquid film dynamics affected by physicochemical properties of the liquid and surfaces as well as thermal-hydraulic conditions. 相似文献
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为了提升腔室洁净度,晶圆厂需对组合设备腔室进行清洗操作,从而提高晶圆的加工质量.考虑腔室清洗时间和晶圆驻留时间的约束条件下,本文研究了单臂组合设备的初始暂态调度问题.首先,提出了机械手的初始暂态活动规则,并对机械手活动序列进行描述,实现了系统的初始暂态可调度性;其次,对机械手在初始暂态和稳态的活动时间进行了建模;然后,根据系统的时间特性,建立了初始暂态调度的线性规划模型;最后,通过实例验证了该方法的有效性.与已有的虚拟晶圆方法相比,该调度方法能有效减少初始暂态的完工时间,提高了组合设备的晶圆生产效率. 相似文献
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In this paper a novel process to bond and, at the same time, to electrically connect a silicon wafer to a glass wafer is presented. It consists of a low temperature anodic bonding process between silicon and glass by using a glass wafer with etched channels in order to contain metal tracks. The glass-to-silicon anodic bonding process at low temperatures (not exceeding 300°C) assures a strong mechanical link (Berthold et al. in Transducers 1999, June:7–10, 1999). The electrical contacts between the metal pads on the backside of a silicon wafer and the metal pads on the glass wafer are achieved by sintering and diffusion of metals due to a kind of thermo compression bonding. This bonding method permits a high vertical control due to a well-controlled etching of the cavity depth and to the thickness precision of both metallization (pads on silicon wafers and metal tracks on glass wafer). This IC-processing compatible approach opens up the way to a new electrical connection concept keeping, at the same time, a strong mechanical bond between glass and silicon wafers for an easier fabrication of a more complex micro-system. 相似文献
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Wafers that are to be submitted to anisotropic etching in aqueous KOH are conventionally passivated with a silicon dioxide or nitride layer in which backside windows are etched to define the microstructures. A different method to mask the backside of a silicon wafer for this purpose is presented. The method makes use of the phenomenon that silicon is not etched in KOH when biased above the passivation potential. The mask is defined by applying a set of bias voltages to the front of the wafer instead of patterning a deposited passivation layer at the backside, for which an accurate double-sided alignment is required. The feasibility of the method was demonstrated with the fabrication of membranes and suspended masses of various sizes 相似文献
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In this study, a simple method for the fabrication of high aspect ratio silicon nanoporous arrays is developed. A N-type silicon wafer is used as the substrate material. A micro-scale pattern of the desired porous array is transferred to the front surface of the silicon wafer by photolithography after which the wafer is placed in a home-made fixture to efficiently expel the etching generated air and promptly hold the back-side illumination light. A halogen lamp is used as the light source for backside illumination to enhance the electron–hole pair generation. An anodization process is then carried out using a new etchant consisting of hydrofluoric acid and mixed EtOH and EMSO surfactant to effectively polish the pore surfaces and sharpen the tips of the etched pores. A nanochannel array with a nano-tip of 61.4?nm is obtained. 相似文献