具有复合空穴传输层的高效低压有机电致发光器件

报道了用m-MTDATA掺杂NPB作复合空穴传输层(c-HTL)的高效率、低电压有机电致发光器件(OLED),器件的最高发光效率达到了5.3cd/A,比NPB作HTL的器件(3.4cd/A)提高了约50%.这是由于c-HTL具有较低的空穴迁移率,改善了发光层中两种载流子的平衡,从而提高了器件性能.进一步在ITO与c-H...     

Designing a solution-processable electron transport layer for transparent organic light-emitting diode

In this work, the extensively used opaque metal cathodes of the conventionally structured OLEDs were replaced with the widely used transparent electrode indium tin oxide (ITO) for solution-processed transparent organic light-emitting diode (T-OLED). A new solution-processable electron transport layer (ETL), aside from facilitating the efficient injection of electrons into the T-OLED, protected the organic emission layer (EML) of the T-OLED against the plasma damage during top ITO cathode sputter deposition. The newly designed solution-processed ETL was the composite of the zinc oxide nanoparticles (ZnO-NPs), and cesium carbonate-doped ethoxylated polyethyleneimine (d-PEIE) with the semi-hydrophilic poly (methyl methacrylate) (PMMA) interlayer coated on the EML insured the good wettability and contact of the hydrophilic ETL with the hydrophobic EML. The solution-processed T-OLED emitted the total maximum luminance of about 2417 cd/m² (bottom side emission at 1455 cd/m² and top emission at 962 cd/m²), total maximum current efficiency at 3.12 cd/A (bottom and top emissions at about 1.78 and 1.34 cd/A, respectively), and total maximum power efficiency at 1.64 l m/W (bottom and top emissions at about 0.95 and 0.69 l m/W, respectively) while having a very high optical transmittance of around 85% at 550 nm light wavelength.     

Two-dimensional-growth small molecular hole-transporting layer by ultrasonic spray coating for organic light-emitting devices

Two-dimensional-growth small molecular organic thin film with high quality is fabricated by ultrasonic spray coating technology (USC) from the toluene solution of 4,4′,4″-tris (carbazol-9-yl) triphenylamine (TCTA). In comparison to the vacuum thermal evaporation (VTE) TCTA film, the USC-TCTA film obtained from liquid-phase solution possesses more uniform surface topography. The differences between the USC-TCTA and the VTE-TCTA in optical property, electrical property and formation mechanism are also studied in detail. Besides, to evaluate the hole transport and electron blocking ability of USC-TCTA film, the organic light-emitting devices (OLEDs) employing USC-TCTA film as hole transport layer are fabricated successfully. Additionally, the green OLEDs based on USC-TCTA film perform as well as the ones with VTE-TCTA film in current density, luminance, efficiency and color stability, and show even better tolerance to high bias voltage.     

Plasma-tolerant structure for organic light-emitting diodes with aluminum cathodes fabricated by DC magnetron sputtering: Using a Li-doped electron transport layer

We fabricate aluminum cathodes that are almost free from plasma damage by DC magnetron sputtering for organic light-emitting diodes (OLEDs). While sputtering is widely known to have numerous advantages over conventional evaporation for mass production of devices, it can cause serious damage to organic layers. In this report, we fabricate devices that are free from plasma damage by introducing a 1%-Li-doped electron transport layer (ETL). The difference of external electroluminescence quantum efficiency between OLEDs with the structure ITO/α-NPD/ETL/Al (where ITO is indium tin oxide and α-NPD is N,N′-di(1-naphthyl)-N,N′-diphenylbenzidine) with Al cathodes deposited by conventional evaporation or sputtering is 0.1%, and their driving voltage is identical. We find that the Li-doped ETL should be thicker than 40 nm. Analysis of the depth profile of the ETL by time-of-flight secondary ion mass spectrometry indicates that considerable damage from sputtering extended to a depth of approximately 30 nm, suggesting that high-energy particles penetrated about 30 nm into the ETL.     

具有双发光层双主体结构的高效稳定WOLED

采用双发光层双主体结构,制备了高效稳定的白光有机电致发光器件(WOLED)。其中蓝光层是TBADN:3 wt%DSA-Ph,红光层是[TBADN:Alq3]:1 wt%DCJTB,通过改变红光层中Alq3和TBADN的掺杂比来调节器件的发光效率和颜色。当[TBADN:Alq3]为75∶25时获得了效率最高、色度好和性能稳定的白光,在20 mA/cm2时器件的发光效率为6.27 cd/A,CIE色坐标为(0.364,0.348)。当电流密度为200 mA/cm2时,发光效率仍能保持在6.15 cd/A,色度坐标为(0.344,0.344)。由于在[TBADN:Alq3]双主体结构中,TBADN具有双极性,从而改善了器件中载流子的平衡及其在发光层中的分布,进而提高的器件的性能。     

利用色彩转换膜实现白色有机电致发光研究

利用蓝色有机发光二极管(BOLED)激发色彩转换膜的方法,制备了一种新型的白色有机电致发光器件(WOLED)。BOLED的发光层采用CBP主体掺杂高效蓝色荧光染料N-BDAVBi来制备;色彩转换膜是将橙红色荧光颜料VQ-D24均匀分散到A、B环氧树脂中涂敷、固化而成。通过调整与分析转换膜的厚度和荧光颜料的掺杂比例来优化白光器件的发光光谱,获得了色稳定性较高的WOLED。当驱动电压由7V升至14V时,WOLED的色坐标(CIE)仅在(0.33,0.32)和(0.34,0.28)间变化,器件最高电流效率约为7.3cd/A(4.35mA/cm2),最高亮度为12000cd/m2(14V)。     

红绿掺杂有机电致发光器件发光性能的研究

制备了结构为ITO/MoO₃(x nm)/NPB(40nm)/CBP:14%GIr1(12.5nm)/CBP:6%R-4b(5nm)/C BP:14% GIr1(12.5nm)/BCP(10nm)/Alq₃( 40nm)/LiF(1nm)/Al(100nm)的红绿磷光器件,G Ir1和R-4B分别为新型绿色和 红色磷光染料,采用绿-红-绿掺杂顺序,结合BCP对空穴的有效限制作用,研究了不同MoO ₃厚度器件的发光 机理。结果表明,在MoO₃为40nm时,器件发光性能较好,在电压 为5V、亮度为100cd·m－2时,得到最大的 电流效率为16.91cd·A－1。为提高器件光效,增加TCTA电子 阻挡层,获得了最高电流效率20.01cd·A－1。原因主要是, TCTA的HOMO能级介于NPB和CBP之间,促进空穴注入;TCTA较高的三线态能量对发光层激子的 限制。     

Low-temperature nickel-doped indium tin oxide anode for flexible organic light-emitting devices

Characteristics of an organic light-emitting diode (OLED) with a structure of Al/tris(8-hydroxyquinoline) aluminum (Alq3), N,N′-bis-(1-naphthyl)-N,N′-diphenyl-1, 1′biphenyl-4, 4′-diamine(NPB)/indium tin oxide (ITO)/Arton film have been improved by the introduction of Ni atoms in the ITO surface layer. The threshold voltage and turn-on voltage of an OLED device with Ni sputter power of 90 W and ITO surface oxygen plasma treatment can be reduced, respectively, by 3.4 V and 2.6 V. The existence of Ni atoms and the formation of Ni oxide phases on ITO surface are suggested for the improved characteristics.     

微腔结构顶发射有机白光器件

结合微腔效应,通过调节不同发光层的厚度制作了顶发射有机白光器件.器件结构为Si/Ag/Ag2O/m-MTDATA/NPB/DPVBi/DCJTB:Alq3/Alq3/LiF/Al/Ag,其中DPVBi,DCJTB与Alq3的掺杂层分别作为蓝光和红光发光层,在选定490 nm的谐振波长时,通过调节DPVBi和掺杂层的厚度来实现对器件发光色度的调节.当DPVBi厚度为1 nm,电压为9 V时,器件的色坐标为(0.33,0.34),非常接近白光等能点.此项工作为利用微腔效应制作高效率高亮度顶发射白光器件奠定了基础.     

PVK:NPB复合空穴传输层对有机电致发光器件的影响

采用poly(N-vinylearbazole)(PVK):N,N'-bis-(1-naphthyl)-N,N'-bipheny-1,1'-biphenyl-4,4'-diamine(NPB)掺杂体系作为复合空穴传输层,通过调节该体系的组分,制备了结构为indium-tin oxide(ITO)/PVK:NPB/8-hydroxyquinoline aluminum(Alq3)/Mg:Ag的双层有机电致发光器件(OLED),研究了具有不同掺杂质量比的OLED器件的电致发光特性,并对掺杂薄膜的表面形貌进行了表征.结果表明,将NPB掺杂到PVK中会提高空穴传输能力,改善器件的发光亮度和效率,并调节载流子复合区域的位置,光谱谱峰从509 nm移动到530 mm;但随着NPB质量比例提高,掺杂薄膜表面的平均粗糙度由3 nm上升为10 mm,电流密度和亮度先升高后降低.当PVK和NPB的掺杂质量比为l:3时,器件具有最优性能,发光亮度达到7852 cd/m2,功率效率为1.75 lm/W.     

High efficiency green phosphorescent top-emitting organic light-emitting diode with ultrathin non-doped emissive layer

Ultrathin non-doped emissive layer (EML) has been employed in green phosphorescent top-emitting organic light-emitting diodes (TOLEDs) to take full advantages of the cavity standing wave condition in a microcavity structure. Much higher out-coupling efficiency has been observed compared to conventional doped EML with relatively wide emission zone. A further investigation on dual ultrathin non-doped EMLs separated by a special bi-layer structure demonstrates better charge carrier balance and improved efficiency. The resulting device exhibits a high efficiency of 125.0 cd/A at a luminance of 1000 cd/m² and maintains to 110.9 cd/A at 10,000 cd/m².     

High efficiency phosphorescent white organic light-emitting diodes with an ultra-thin red and green co-doped layer and dual blue emitting layers

Phosphorescent white organic light emitting diodes (WOLEDs) with a multi-layer emissive structure comprising two separate blue layers and an ultra-thin red and green co-doped layer sandwiched in between have been studied. With proper host and dopant compositions and optimized layer thicknesses, high-performance WOLEDs having a power efficiency over 40 lm/W at 1000 cd/m² with a low efficiency roll-off have been produced. Through a systematic investigation of the exciton confinement and various pathways for energy transfer among the hosts and dopants, we have found that both the ultra-thin co-doped layer and two blue emitting layers play a vital role in achieving high device efficiency and controllable white emission.     

Low sublimation temperature cesium pivalate complex as an efficient electron injection material for organic light-emitting diode devices

Cesium pivalate ((CH₃)₃CCOOCs) has been synthesized and applied as an electron injection material for organic light-emitting diodes, which showed low sublimation temperature of 180 °C. Typical bilayer structure of ITO/NPB (60 nm)/Alq₃ (50 nm)/EIL/Al was used to evaluate the electron injection efficacy of (CH₃)₃CCOOCs, the results showed (CH₃)₃CCOOCs/Al exhibits better electron injection than LiF/Al cathode and the power efficiency was improved by about 19% at current density of 50 mA/cm². More interestingly, in the typical three layer OLED structure ITO/2-TNATA (60 nm)/NPB (10 nm)/Alq₃:2% C545T (40 nm)/MADN (15 nm)/(CH₃)₃CCOOCs (2 nm)/Al, the maximum current efficiency is up to 20 cd/A with Commission Internationale d’Eclairage (CIE_x,_y) color coordinates of (x = 0.30, y = 0.65) at current density of 140 mA/cm², which indicates that the non-aromatic alkali metal complex can also have good match with the chemically stable compound and exhibit good electron injection properties.     

聚对二甲苯类薄膜用于有机电致发光器件的封装

采用热解化学气相沉积聚合(TCVDP)方法制备了聚对二甲苯(PPX)和聚一氯对二甲苯(PCPX)薄膜材料,利用其对有机电敛发光器件(OLED)进行了封装.利州紫外可见光谱、扫描电镜(SEM)对薄膜的相关性能进行了表征.比较了器件经过两种薄膜封装前后器件的工作寿命.实验结果表明:利用TCVDP方法,可以制备出透明的表面平整、结构致密的聚对二甲苯类薄膜材料;用于OLED)的封装能大幅度地提高器件的工作寿命,经过PPX封装后的寿命为1215 h,经过PCPX封装后的寿命为1 558 h,比未封装的器件寿命(197 h)提高了6～8倍.     

Properties of non-doped organic light-emitting devices based on an ultrathin iridium complex phosphor layer

Organic light-emitting devices (OLEDs) were constructed with a structure of indium tin oxide (ITO)/N,N'-bis(naphthalen-1-yl)-N'-bis(phenyl)-benzidine (NPB) (50-xnm)/bis[2-(4-tertbutylphenyl)benzothiazolato-N,C2'] iridium (acetylacetonate) [(t-bt)2Ir(acac)] (nm)/NPB (30nm)/Mg:Ag (200nm).A thin blue emission material of NPB was used as a separating layer,and the (t-bt)2Ir(acac) yellow phosphorescent dye was acted as an ultrathin light-emitting layer.TPBI acted as both hole-blocking and electron-transporting layer.By changing the location (x) and the thickness (d) of the phosphor dye,the variation of device performance were investigated.The results showed that all the devices had a turn-on voltage of 2.8V.In the case of d=0.2nm and x=5nm,the OLED had a maximum luminance of 18367cd/m2 and a maximum power efficiency of 5.3lm/W.The high performance is attributed to both direct charge carrier trapping of iridium phosphor dye and the thin NPB separation layer,which effectively confines the recombination zone of charge carriers.     

Analysis of electron traps formed in organic films with a sputtered cathode

To understand why performance degradation is reduced for sputtered cathodes on organic devices when the electron transport layer (ETL) is doped with Li, we analyze electron-only devices using the thermally stimulated current (TSC) technique and modeling of temperature-dependent current–voltage characteristics with a trapped-charge-limited current (TCLC) model. The combined results suggest that the trap density measured by TSC might also include a portion of the density of the hopping sites in the lowest unoccupied molecular orbital levels, which contributes to charge transport. Compared to undoped devices, doped devices maintain a high density of hopping sites even when the Al is sputtered. We propose that the reduced effect of sputtering on electron injection and transport properties is because radical anions of Alq₃ might still be formed by the strong reducer Li even if the organic material is partially damaged. An additional TSC peak and increased driving voltage for doped tris(8-hydroxyquinoline)aluminum (Alq₃) as an ETL with a sputtered cathode suggests the formation of new traps possibly because of damage even though the transport is better compared to the undoped device. Such traps are not found in doped bathophenanthroline (Bphen) as an ETL, which shows no change in driving voltage.     

一种新型蓝色有机电致发光器件及其发光机理

利用5,6,11,12-tetraphenylnaphthacene(Rubrene)超薄层制备了一种蓝光有机电致发光器件(OLED),器件结构为ITO/N,N'-diphenyl-N,N'-bis(1-naphthyl)-(1,18-biphenyl)-4,4'-diamine(NPB)(50nm)/2,9-d...     

阴极蒸镀和隔离层对有机发光二极管性能的影响

制备了简单结构的有机发光二极管(OLED)ITO/NPB/Alq3/Al/Ag。实验结果表明,快速蒸镀法制备的Ag阴极越厚,器件性能越差,而慢速蒸镀200nmAg阴极时器件性能也较差。在Alq3与Al阴极之间插入BCP/C60/LiF隔离层后,即使快速蒸镀法制备的Ag厚达280nm,器件的最大电流密度、最大亮度和最大电流效率仍分别高达248.6mA/cm2、5380.7cd/m2和3.52cd/A。隔离层不仅保护NPB和Alq3基本不被玻璃化,还很好地与Alq3和Al阴极匹配,大大提高了器件性能。     

Efficient single layer RGB phosphorescent organic light-emitting diodes

We report efficient single layer red, green, and blue (RGB) phosphorescent organic light-emitting diodes (OLEDs) using a “direct hole injection into and transport on triplet dopant” strategy. In particular, red dopant tris(1-phenylisoquinoline)iridium [Ir(piq)₃], green dopant tris(2-phenylpyridine)iridium [Ir(ppy)₃], and blue dopant bis(3,5-difluoro-2-(2-pyridyl)phenyl-(2-carboxypyridyl)iridium [FIrpic] were doped into an electron transporting 1,3,5-tris(N-phenylbenzimidazole-2-yl)benzene (TPBi) host, respectively, to fabricate RGB single layer devices with indium tin oxide (ITO) anode and LiF/Al cathode. It is found that the maximum current efficiencies of the devices are 3.7, 34.5, and 6.8 cd/A, respectively. Moreover, by inserting a pure dopant buffer layer between the ITO anode and the emission layer, the efficiencies are improved to 4.9, 43.3, and 9.8 cd/A, respectively. It is worth noting that the current efficiency of the green simplified device was as high as 34.6 cd/A, even when the luminance was increased to 1000 cd/m² at an extremely low applied voltage of only 4.3 V. A simple accelerated aging test on the green device also shows the lifetime decay of the simplified device is better than that of a traditional multilayered one.     

Room temperature solution-processed electron transport layer for organic solar cells

We present a new recipe for a solution-processed titanium oxide (TiO_x) based electron transport layer at room temperature. Due to its high chemical compatibility with all types of organic blends (semi-crystalline or amorphous) and it is good adhesion to both surfaces of glass/ITO substrate and the active layer (blend), the buffer layer is suitable for use in organic solar cell devices with conventional, inverted or multi-junction structures. The main goal of this recipe is producing with easiness an repeatable and stable precursor that will leads to titanium oxide buffer layer each time with the same quality. Since the processing of the titanium oxide layer itself does not require any initial or additional treatment before and after the coating, and can even be carried in air as well as under protective atmosphere, our room temperature solution-processed electron transport layer is highly versatile and very promising for cost effective mass production of organic solar cells.