Titanium nitride films with high oxygen concentration

Titanium nitride (TiN) films with 10–15% oxygen incorporation were prepared by direct-current reactive sputtering in a mixture of argon and nitrogen with an electronicgrade titanium target. These TiN films were found to exhibit a tensile stress and a grain size of about 200Å. No degradation in barrier properties was detected by Rutherford backscattering spectroscopy, Auger profiling and x-ray diffraction even after a 30 min 560° C argon anneal. These TiN films formed Schottky barrier diodes on n(100)-Si with nearly ideal barrier properties and a barrier height of 0.55 eV. The conduction mechanism in the TiN/p(100)-Si diodes was found to be quasi-ohmic. A work function of 4.5 eV was obtained for these TiN films.     

微小间隙静电放电中两种放电模式的影响研究

设计实验讨论了被普遍认为是空气放电的带电体与受电体有相对运动速度的静电放电的参数变化性质。由于电极最终要碰触到放电靶上,所以,同时考虑接触放电模式的影响。在不同放电间隙情况下用静电放电发生器进行了实验,证实真实静电放电过程中存在两种放电模式。实验测量了在不同放电间隙状态下用静电放电发生器向靶运动放电的参数,分析了空气放电和接触放电对整个放电过程的作用影响。结果表明:有电极移动速度的静电放电应认为是接触放电与空气放电共同作用的综合放电过程。     

电缆放电事件建模及其特性测试研究

参考人体行走电压的测试标准IEC 61340-4-5,搭建了电缆由线轴上绕下并在地板上拖拽积累的电压的测试系统,测量了六类非屏蔽网线的电压波形.基于实测电缆电压波形,提出了电缆电压的RC等效电路模型,并分析了模型参数对电缆电压时域波形的影响.进行了电缆充电后对金属靶的放电实验,测量了电缆放电事件的电流波形、瞬态电场和瞬态磁场波形,分析了电缆放电事件对电子设备的影响.根据测量的电缆放电事件的电流波形,对比了GJB 151B中CS 115电缆束注入脉冲激励传导敏感度的电流波形,二者电流波形有一定的相似性,但是对于较长电缆在电流的强度和宽度方面都会大于CS 115规定的限值.因此,提出了电缆放电事件的防护方法,并对相关标准的改进方面提出了初步建议.     

TFT_LCD驱动芯片GATE／SOURCE静电保护电路设计与实现

文章描述了TFT_LCD驱动芯片防静电（ESD）保护电路的布局,重点分析和设计了TFT_LCD驱动芯片GATE和SOURCE引脚的ESD保护电路。ESD保护电路布局上,采用髓排ESD电路错开呈”品字形“排列,使ESD电流均匀流通。在GATE保护电路中,采用二极管接法代替通用PMOS,防止电路产生Latch-up效应。SOURCE的保护电路中．NMOS的Drain设计了RPO（Resisl Protection Oxide）,使流经Drain的电流均匀分散,使二次击穿电压升高。     

The novel SCR-based ESD protection with low triggering and high holding voltages

This paper introduces a novel silicon controlled rectifier (SCR)-based circuit. The proposed device using 70 nm DRAM process obtained the high holding and low triggering voltages by using variable IR drop. These characteristics enable to discharge electrostatic discharge (ESD) current and ensure latch-up immunity for normal operations. Also, the proposed scheme is easily implemented through the modification of the metal connection compare to the conventional SCR-based device. We investigated electrical characteristics by both measurements and TCAD simulations. Measurement results showed the proposed SCR had triggering voltage of 6.2 V, holding voltage of 3.3 V, and the second breakdown current of 58 mA/μm.     

Design and analysis of a NMOS triggered LIGBT structure for electrostatic discharge protection

A novel NMOS triggered LIGBT (NTLIGBT) structure is proposed for electrostatic discharge (ESD) protection in this paper. The structure utilizes internal NMOS to trigger SCR-like structure in LIGBT. The trigger voltage is significantly reduced because the embedded NMOS causes N⁺-drain/P-body junction being apt to avalanche breakdown. At the same time, the new parasitic PNP transistor including the newly added P⁺-region as a collector forms another path to bleed ESD current and then the conductivity modulation in the LIGBT is weakened. As a result, the holding voltage is increased. So, the proposed NTLIGBT structure has a narrow ESD design window. The simulation results show an improvement of 71.5% in trigger voltage and over 50% in holding voltage comparing with the conventional LIGBT structure.     

THEORETICAL ANALYSIS ON THE TRANSIENT PROCESS OF AC SILENT DISCHARGE

A mathematical model for analysing transient process of AC silent discharge isestablished from its physical model.Then,the breakdown characteristics and the dependence ofdischarge current density on time are calculated theoretically in this kind of AC silent discharge.They are compared with the experimental results and the deviation between the theoretical andexperimental results are discussed briefly.     

Temperature-dependent dynamic triggering characteristics of SCR-type ESD protection circuits

Experimental analysis of the dynamic characteristics of various silicon-controlled rectifier (SCR)-type ESD protection circuits at various temperatures has been carried out. These circuits include MOSFET-trigger SCR (MTSCR), diode-chain-trigger SCR (DCTSCR), low-voltage zener diode trigger SCR (ZDSCR), low-voltage trigger SCR (LVTSCR) and gate-coupled low-voltage trigger SCR (GCSCR) circuits. The static trigger voltage increases with temperature if the SCR uses the breakdown trigger mechanism, otherwise it decreases with temperature. The peak pad voltages for the MTSCR and DCTSCR subjected to a pulse-like ESD stress decrease with increasing temperature, while those of GCSCR and LVTSCR are relatively insensitive to temperature.     

人体静电放电参数对带电电压的依赖关系研究

在带电电压为200～3000V的范围内测量了带电人体放电电流和上升时间,计算了其他放电参数;研究了放电参数与电压和电板速度的相关性.将RampeWeizel定理用于空气中带电人体的小间隙静电放电模型.观察发现在电压为800V时放电参数在电极运动速度影响下出现临界值.当电压高于1000V,或低于600V时,电极移动速度对放电参数的影响出现降低的趋势.     

Titanium nitride as a diffusion barrier between nickel silicide and aluminum

The diffusion barrier properties of titanium nitride between nickel silicide and aluminum have been investigated in NiSi Schottky contacts on silicon for annealing temperatures of 400–600°C. No interaction between the metals of the contact structure was detected by backscattering spectrometry, even at 600°C. The electron barrier height of Schottky diodes stays constant at ϕBn = 0.67 ± 0.01 upon thermal annealing in vacuum at 500°C for 2 h . The ideality factor is n = 1.01. After 4 h, ϕ Bn decreases by about 10 mV and n rises to 1.0 6. The diodes degrade after annealing at 550°C or 600°C for 30 min.     

静电放电模拟器电路建模分析

从实际的静电放电模拟器结构出发,根据接触放电时静电放电电流的主要特征,考虑到静电模拟器本身、连接线及回路电缆与地平面间产生的分布参数的影响,建立了一个新的静电放电模拟器等效电路模型,并用PSPICE软件对等效电路进行模拟分析,得到了与实测波形基本一致的电流波形.利用该模型讨论了各分布参数对放电电流的影响.结果表明:模拟器体电阻与地间的电感对电流波形影响不大,因此可以忽略,但其与地之间的分布电容对电流波形的低频段有重要影响;连接线分布参数对电流波形的第一峰值及波形光滑度都有影响;回路电缆分布参数主要影响了电流波形中第二个波峰峰值及其位置.     

Atomic layer deposition of titanium nitride from TDMAT precursor

TiN was grown by atomic layer deposition (ALD) from tetrakis(dimethylamino)titanium (TDMAT). Both thermal and plasma enhanced processes were studied, with N₂ and NH₃ as reactive gases. Using an optimized thermal ammonia based process, a growth rate of 0.06 nm/cycle and a resistivity of 53 × 10³ μΩ cm were achieved. With an optimized plasma enhanced NH₃ process, a growth rate of 0.08 nm/cycle and a resistivity of 180 μΩ cm could be obtained. X-ray photo electron spectroscopy (XPS) showed that the difference in resistivity correlates with the purity of the deposited films. The high resistivity of thermal ALD films is caused by oxygen (37%) and carbon (9%) contamination. For the film deposited with optimized plasma conditions, impurity levels below 6% could be achieved. The copper diffusion barrier properties of the TiN films were determined by in-situ X-ray diffraction (XRD) and were found to be as good as or better than those of films deposited with physical vapor deposition (PVD).     

Voltage dependence property of parameters for human body discharge in air through a small metal rod

Discharge parameters are measured and calculated in electrostatic discharge （ESD） from charged human body through a small moving handheld metal rod. Correlation study has been performed on discharge parameters with charge voltage as well as approach speed. At charge voltage 800 V, difference of discharge parameters caused by fast and slow approach speed of electrode is found to reach extreme values. To explore the reason for this special case, an analysis with a short-gap ESD model is carried out.     

Alternative precursor systems for the MOCVD of aluminium nitride and gallium nitride

Two alternative precursor systems have been investigated for the growth of AlN and GaN by MOCVD. The first involved the reaction between Me₃M (M(DOUBLE BOND)Al, Ga) and tert-butylamine (^tBuNH₂), whilst the second route involved the pyrolysis of single-source precursors such as Me₃M(NH₃) (M(DOUBLE BOND)Al, Ga) and [Me₂Ga(NH₂)]₃. Both routes proved suitable for the deposition of AlN thin films, and epitaxial AlN layers have been deposited on sapphire (0001) from Me₃Al(NH₃) without any added NH₃. Attempts to grow GaN from Me₃Ga/^tBuNH₂ mixtures or Me₃Ga(NH₃) were unsuccessful, leading to the deposition of Ga droplets, although GaN films containing a large excess of Ga were deposited by low-pressure MOCVD from the single-source precursor [Me₂Ga(NH₂)]₃.     

CMOS射频集成电路ESD保护的挑战

随着集成电路(IC)T艺进入深亚微米水平,以及射频(Radi0.Frequency,RF)IC工作频率向数千兆赫兹频段迈进,片上防静电泄放(ESD)保护设计越来越成为RF IC设计的挑战.产生这一挑战的关键原因在于ESD保护电路和被保护的RF IC核电路之间存在着不可避免的复杂交互影响效应.本文讨论了RF ESD保护的研究和设计领域的最新动态,总结了所出现的新挑战、新的设计方法和最新的RF ESD保护解决方案.     

射频放电波导CO激光器

射频放电波导CO激光器的结构如图1所示,一对平行平板铝电极,中间以氧化铝陶瓷作为侧壁。放电区的长度为386mm,电极间距为2mm,放电宽度为2～20mm。电极温度的变化范围为20℃～-30℃,由放在电极端口附近的热敏电阻进行监测。冷却的甲醇液体流经上下电极。射频电源频率为125MHz,经由一耦合回路馈入电极。为了使电极上的电压分布均匀以     

人体行走电压的时域波形研究

基于测试得到的人体行走电压时域波形,提出了仿真人体行走电压的等效电路模型构建方法,分析了模型参数对人体行走电压时域波形的影响.按照IEC 61340-4-5中规定的人体行走电压的测试方法,测试了不同温湿度、不同鞋、不同地板条件下,人体行走电压的时域波形.通过对大量实测人体行走电压时域波形的分析,提出了人体行走电压的等效RC电路模型,得到人体的带电量满足指数形式的充放电关系,其时间常数τ由等效电路模型的电阻R、电容C参数决定.人体行走中,人的动作引起人体电容的周期性变化,进而导致人体电压呈现周期性变化趋势.通过对比实测数据,模型与实验结果符合较好,人体动作引起的电压周期性变化一致性较好,实验具有很好的可重复性.     

CMOS射频集成电路ESD保护的挑战

随着集成电路(IC)T艺进入深亚微米水平,以及射频(Radi0.Frequency,RF)IC工作频率向数千兆赫兹频段迈进,片上防静电泄放(ESD)保护设计越来越成为RF IC设计的挑战.产生这一挑战的关键原因在于ESD保护电路和被保护的RF IC核电路之间存在着不可避免的复杂交互影响效应.本文讨论了RF ESD保护的研究和设计领域的最新动态,总结了所出现的新挑战、新的设计方法和最新的RF ESD保护解决方案.     

静电及其研究进展

基于测试得到的人体行走电压时域波形, 提出了仿真人体行走电压的等效电路模型构建方法, 分析了模型参数对人体行走电压时域波形的影响.按照IEC 61340-4-5中规定的人体行走电压的测试方法, 测试了不同温湿度、不同鞋、不同地板条件下, 人体行走电压的时域波形.通过对大量实测人体行走电压时域波形的分析, 提出了人体行走电压的等效RC电路模型, 得到人体的带电量满足指数形式的充放电关系, 其时间常数τ由等效电路模型的电阻R、电容C参数决定.人体行走中, 人的动作引起人体电容的周期性变化, 进而导致人体电压呈现周期性变化趋势.通过对比实测数据, 模型与实验结果符合较好, 人体动作引起的电压周期性变化一致性较好, 实验具有很好的可重复性.     

智能平板电视机产品插头放电试验浅析

对智能平板电视机插头产生放电现象的原理进行分析,依据放电试验相关标准,明确智能平板电视机插头放电试验测试要求并制定操作流程,确定放电试验试验方法,分析实际检测样例,最后总结试验现象和关键问题.