共查询到20条相似文献,搜索用时 15 毫秒
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Photolithography Process Simulation for Integrated Circuitsand Microelectromechanical System Fabrication 总被引:1,自引:0,他引:1
基于3D元胞自动机方法实现了影像成形、曝光、后烘和光刻胶刻蚀过程等集成电路和微电子机械系统加工过程中的光刻过程模拟模块的集成. 模拟结果与已有实验结果一致,表明基于3D元胞自动机方法的后烘和光刻胶刻蚀模拟模块的有效性,这对于实现集成电路和微电子机械系统的器件级的工艺模拟具有一定的实用性. 相似文献
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Torbjörn Eriksson Shoko YamadaPrasanna Venkatesh Krishnan Sankar RamasamyBabak Heidari 《Microelectronic Engineering》2011,88(3):293-299
Nanoimprint lithography (NIL) has developed from an emerging nanoreplication technology into a mature and industrially viable manufacturing technology. It is now by far the fastest and most cost-efficient nanoreplication method available. This technology has been successfully implemented in the manufacturing of High Brightness LED’s. However, manufacturing of HBLED’s in high volume using nanoimprint lithography faces a few particular challenges. Perhaps the most significant is to produce perfectly imprinted nanostructures on the epitaxially grown substrates with high quality and yield. This is especially important since the substrates are expensive and since the imprint step is close to the end of the production process. This means that the value of the processed substrates is very high. In this work, 8000 imprints were produced. Measured data from the imprinted substrates shows consistent results. It is also shown that the 8000 imprints have been performed using the same stamp without significant degradation. After 8000 imprints, the yield from the nanoimprint lithography step is 99.15%. 相似文献
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新型悬空结构射频微电感的制作与测试 总被引:1,自引:0,他引:1
利用MEMS(Micro Electro-Mechanical System:微机电系统)工艺中的牺牲层技术制作了一种新型悬空结构微电感,在此悬空结构中,微电感的线圈制作在与衬底平行的平面上,线圈与衬底之间有立柱支撑;此新型微电感的制作工艺流程简单,与集成电路工艺相兼容,且其高频性能较好。并对此结构微电感的性能进行了测试,测试频率范围在0.05~10 GHz之间,结果表明:当悬空结构微电感的悬空高度为20 靘,工作频率在3~5 GHz范围内时,其电感量达到4 nH,其Q值最大可达到22。 相似文献
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纳米器件的一种新制造工艺——纳米压印术 总被引:5,自引:1,他引:5
纳米压印术可以用于大批量重复性地制备纳米图形结构。此项技术具有操作简单、分辨率高、重复性好、费时少,成本费用极低等优点。本文介绍了较早出现的软刻印术的两种方法———微接触印刷法和毛细管微模制法。详细讲述了纳米压印术(主要指热压雕版压印法)的各步工序———压模制备、压印过程和图形转移,以及用于压印的设备、纳米图案所达到的精确度等,还简述了纳米压印术的另一方法———步进-闪光压印法。最后,通过范例介绍了纳米压印术在制作电子器件、CD存储器和磁存储器、光电器件和光学器件、生物芯片和微流体器件等方面的应用。 相似文献
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Lars Henrik Dæhli Skjolding Genis Turon Teixidor Jenny Emnéus Lars Montelius 《Microelectronic Engineering》2009,86(4-6):654-656
This paper presents a novel strategy for aligning patterns created with nano-imprint lithography (NIL) and UV lithography, similar to a mix-and-match process, which allows for the fabrication of large and small features in a single layer of resist. The resin used to demonstrate this new imprinting scheme is SU-8, a very widely used negative photoresist. Rapid stamp manufacturing using ma-N 2405 photoresist is also demonstrated. The processing scheme is a promising candidate for patterning of sensors featuring nanometre sized electrodes. 相似文献
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Morihisa Hoga Kimio ItohMikio Ishikawa Naoko KuwaharaMasaharu Fukuda Nobuhito ToyamaSyuhei Kurokawa Toshiro Doi 《Microelectronic Engineering》2011,88(8):1975-1977
Nanoimprint lithography (NIL) is a promising candidate technology to fabricate patterned media for the next generation hard disk drives (HDD). The requirement of pattern pitch for the HDD or discrete-track recording (DTR) media will be as small as from 40 to 50 nm by 2011 or 2012. However not only to create such fine pitch but also long e-beam writing time such as 1 week with conventional high resolution resist ZEP520A are critical. This paper addresses the fabrication processes to combine silicon substrate and a new chemically amplified resist (CAR) for the master molds of this NIL. The e-beam writing speed with this new CAR was achieved over 3-times faster while 50 nm fine DTR patterns were demonstrated with rotary stage e-beam writer. Furthermore, the replication with J-FIL from the master mold into quartz working mold was also demonstrated. 相似文献
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纳米压印光刻模版制作技术 总被引:4,自引:0,他引:4
在下一代光刻技术中,光刻的成本越来越高,这使得工业界开始寻找新的技术。纳米压印作为非光学的下一代光刻技术,具有分辨率高、成本低、产率高等诸多优点,因而可能应用于将来的半导体制造中。同时,纳米压印也可以用于微机电系统(MEMS)和其他纳米结构的图形复制。纳米压印光刻技术主要包括热压印、紫外固化压印和微接触法压印。介绍了在这3种纳米压印光刻技术中,压印模版制作的制作工艺和模版表面的防粘连处理,并且讨论3种压印方法适用的不同领域。 相似文献
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Direct sub-100-nm patterning of an organic low-k dielectric for electrical and optical interconnects 总被引:1,自引:0,他引:1
Jeffrey M. Catchmark Guy P. Lavallee Michael Rogosky Youngchul Lee 《Journal of Electronic Materials》2005,34(3):L12-L15
Low-k dielectric materials compatible with copper interconnect fabrication processes extending to the sub-50-nm technology
nodes are desired for high speed integrated circuit (IC) fabrication. We demonstrate that bisbenzocyclobutene (BCB), an organic
low-k dielectric material, can be patterned with sub-100-nm resolution using electron beam lithography, providing new avenues
for nanoscale electrical and optical interconnect fabrication. 相似文献
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对于3D互连、圆片级封装(WLP)和先进的MEMS器件的圆片键合,精密对准是一项关键技术,不同的MEMS,常常包含双面加工处理,而IC和CMOS制造业则只利用单面加工处理步骤,因此,圆片到圆片的对准必须使用设置在键合界面(也就是面对面)中的对准标记。论述了面对面对准方法的主要步骤,最新结果报导,用一种特殊开发的对准系统获得了≤1μm的对准精度。设备主要是为圆片对圆片的对准和键合而设计。 相似文献
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Nishihashi T. Kashimoto K. Fujiyama J. Sakurada Y. Shibata T. Suguro K. Sugihara K. Okumura K. Gotou T. Saji N. Tsunoda M. 《Semiconductor Manufacturing, IEEE Transactions on》2002,15(4):464-469
A new type of ion implanter developed for an agile fab can eliminate the processes concerned. with photoresist lithography from the ion implantation process. This new ion implantation technology can reduce the raw process time, footprint, and the cost of ownership to less than one-half that of conventional ion implantation technology. The authors are making further developments on this ion implanter and evaluating technical issues related to ion implantation. This technique is suitable for manufacturing submicron node IC devices. Based on the results of evaluating the prototype machine, we will produce the next /spl beta/-machine. 相似文献
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PaulLindner ChristianSchaefer ShariFarrens VioreDragoi 《电子工业专用设备》2004,33(1):12-15
随着微电子机械系统新应用的不断推出,使得特殊制造工艺技术得到空前的发展。在过去的10年里,汽车是微电子机械系统产品商业化的推动力。如今,我们进入了以消费品和信息技术的产品占很高份额的微电子机械系统生产制造的新时代,如微射流器件,微光电子机械系统,射频微电子机械系统,非汽车应用加速度器和陀螺等。阐述用于商业化的如上所述器件的新制造工艺技术,即用全自动轨道传送光刻系统来实现低成本的紫外线光刻工艺,以及用于加速度器和陀螺等消费品的高真空键合制造工艺技术。 相似文献
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LIGA技术在微机械结构的制作中具有很重要的作用。针对LIGA技术所存在的缺点,提出了一种利用多层光刻胶工艺的准LIGA技术。利用此技术,可以用普通光学曝光机将光刻图形转移到较厚的光刻胶上,而且深宽比可以做得很大。 相似文献
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提出了一种面向微惯性测量单元(Micro-IMU)应用的微电子机械系统(MEMS)三维可折叠结构,其主要组成部分包括绝缘层上硅(SOI)基底、聚酰亚胺柔性链、金属线以及MEMS多环陀螺仪。文章基于有限元仿真技术,分析了可折叠结构及器件的可行性。基于SOI一体化MEMS技术,将核心传感器的制作工艺与折叠结构工艺相结合,在结构中搭载单轴圆盘多环谐振微陀螺,利用柔性铰链实现结构的三维折叠以及各个传感器之间的电互连,实现单轴惯性传感器的集成,制备出体积为1cm3、质量为250mg的搭载多环谐振微陀螺的三维可折叠系统。 相似文献
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圆片级芯片测试在IC制造工艺中已经成为不可或缺的一部分,发挥着重要的作用,而测试探卡在圆片级芯片测试过程中起着关键的信号通路的作用。分析指出由于芯片管脚密度的不断增加以及在高频电路中应用的需要,传统的组装式探卡将不能适应未来的测试要求;和传统探卡的组装方法相比,MEMS技术显然更适应当今的IC技术。综述了针对MEMS探卡不同的应用前景所提出的多种技术方案,特别介绍了传感技术国家重点实验室为满足IC圆片级测试的要求,针对管脚线排布型待测器件的新型过孔互连式悬臂梁芯片和针对管脚面排布型待测器件的Ni探针阵列结构的设计和制造。 相似文献
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Ran Ji Michael Hornung Marc A. Verschuuren Robert van de Laar Jan van Eekelen Ulrich Plachetka Michael Moeller Christian Moormann 《Microelectronic Engineering》2010,87(5-8):963-967
The global LED (light emitting diode) market reached 5 billion dollors in 2008 and will be driven towards 9 billion dollors by 2011 [1]. The current applications are dominated by portable device backlighting, e.g. cell phones, PDAs, GPS, laptop etc. In order to open the general lighting market doors the luminous efficiency needs to be improved significantly. Photonic crystal (PhC) structures in LEDs have been demonstrated to enhance light extraction efficiency on the wafer level by researchers [2]. However, there is still a great challenge to fabricate PhC structures on LED wafers cost-effectively. Nanoimprint lithography (NIL) [3] has attracted considerable attentions in this field due to its high resolution, high throughput and low cost of ownership (CoO). However, the current NIL techniques with rigid stamps rely strongly on the substrate flatness and the production atmosphere. Those factors hinder the integration of NIL into high volume production lines. UV-NIL with flexible stamps [4], e.g. PDMS stamps, allows the large-area imprint in a single step and is less-sensitive to the production atmosphere. However, the resolution is normally limited due to stamp distortion caused by imprint pressure.A novel NIL technique developed by Philips Research and Süss MicroTec, substrate conformal imprint lithography (SCIL), bridges the gap between UV-NIL with rigid stamp for best resolution and soft stamp for large-area patterning. Based on a cost-effective upgrade on Süss mask aligner, the capability can be enhanced to nanoimprint with resolution of down to sub-10 nm on an up to 6 inch area without affecting the established conventional optical lithographic processes on the machine. Benefit from the exposure unit on the mask aligners, the SCIL process is now extended with UV-curing option, which can help to improve the throughput dramatically. In this paper, the fabrication of photonic crystal structures with SCIL technique on Süss MA6 mask aligner is demonstrated. In addition, the industrialization considerations of UV-SCIL process in high volume manufacturing are briefly discussed. 相似文献