PECVD淀积Si3N4作为光刻掩膜版的保护膜

采用等离子增强化学汽相淀积(PECVD)方法淀积Si3N4薄膜作为光刻掩膜版的保护膜,可以降低掩膜版受损程度,延长使用寿命.分析了Si3N4膜厚的选取要求,给出了PECVD淀积Si3N4膜的工艺条件.实际制作了带有Si3N4保护的光刻掩膜版,并与不带Si3N4保护的掩膜版的使用情况做了对比.结果表明,带有Si3N4保护的光刻掩膜版的使用寿命可明显延长2倍以上.     

PECVD法淀积TiSi_2薄膜性质及应用研究

利用平板电容耦合式PECVD设备淀积TiSi_2薄膜,经800℃,30分钟的扩散炉退火,TiSi_x形成稳定的TiSi_2.用俄歇电子能谱和X射线衍射来监测硅化物的形成.用扫描电子显微镜观察了TiSi_2薄膜的等离子刻蚀情况.分别采用I—V法和C—V法测量了TiSi_2/Si接触的肖特基势垒高度.利用圆形传输线模型外推法求得了TiSi_2/Si引的接触电阻率,这比同样条件下Al/Si的接触电阻率低一个数量级以上.     

利用Lorentz-Lorenz关系监测PECVD和MPCVD氮化硅膜的Si/N比值

本文主要介绍利用电子极化的Lorentz(劳伦茨)-Lorenz(劳伦兹)关系监测和研究等离子体增强型化学汽相淀积(PECVD)和微波等离子体化学汽相淀积(MPCVD)氮化硅薄膜的Si/N比值,以及如何应用该关系进行工艺实验和工艺监测。     

Cat-CVD法制备硅薄膜及在TFT中的应用进展

目前有源平板显示领域主要采用PECVD法制备TFT用硅薄膜,但是由于PECVD中等离子对Si薄膜的损伤以及淀积薄膜的温度很高的缺点,使其在制备高迁移率TFT的应用中受到了限制。新出现的催化化学气相淀积法(Cat-CVD)与PECVD法相比,具有淀积速率高、原料气体利用效率高、衬底温度低、生长的薄膜致密、电学特性好等优点,将更有希望成为TFT用硅薄膜制备的新技术。文章对Cat-CVD法的工作机理及其在TFT中的应用进展进行了详细总结,归纳了各种催化丝材料,并对当前Cat-CVD技术研究中的不足及其以后的研究发展进行了讨论。     

空心阴极离子淀积TiN薄膜特性研究

本文用空心阴极离子淀积系统,在氮和氩的混合气体中淀积了TiN薄膜.X射线衍射方法、俄歇电子谱(AES)和电学测量等方法用来研究分析了TiN薄膜的结构、组分和薄膜电阻率.该TiN薄膜有很低的电阻率,其电阻率约为25μΩcm.Al/TiN/Si金属化系统经550℃、30分钟热退火后,卢瑟富背散射(RBS)分析结果表明,没有发现互扩散现象,说明TiN在硅集成电路中是一种良好的扩散势垒材料.     

SiGe MOS器件SiO_2栅介质低温制备技术研究

为了获得电学性能良好的 Si Ge PMOS Si O2 栅介质薄膜 ,采用等离子体增强化学汽相淀积 (PECVD)工艺 ,对低温 30 0°C下薄膜制备技术进行了研究。实验表明 ,采用适当高温、短时间对PECVD薄膜退火有助于降低薄膜中正电荷密度和界面态密度。该技术用于 Si Ge PMOS研制 ,在30 0 K常温和 77K低温下 ,其跨导分别达到 45m S/mm和 92 .5m S/mm(W/L=2 0 μm/2 μm)     

用AES和XPS技术研究半绝缘多晶硅薄膜

本文用俄歇电子能谱仪(AES)和X射线光电子能谱仪(XPS)研究半绝缘多晶硅(SIPOS)薄膜中硅的化学价态.通过对Si LVV俄歇谱谱线形状和位移以及Si(2p)芯态峰位移的分析,揭示了SIPOS膜是由元素Si、SiO和SiO_2组成.经过1100℃高温退火的SIPOS 膜经历了一个再结构过程——SiO_2成份增强和SiO向Si_2O_3的转变.     

Si1-x Gex:C缓冲层的生长温度对Ge薄膜外延生长的影响

用化学气相淀积方法,在Si(100)衬底上生长Si1-x Gex:C合金作为缓冲层、继而外延生长了Ge晶体薄膜,用X射线衍射(XRD)、俄歇电子能谱(AES)、拉曼(Raman)衍射光谱等对所得到的样品进行了表征测量,着重研究了Si1-x Gex:C缓冲层生长温度对样品结构特征的影响.结果表明:Si1-x Gex:C缓冲层中的Ge原子浓度沿表面至衬底方向逐渐降低,其平均组分随着生长温度的升高而降低.这与较高生长温度(760～820℃)所导致的原子扩散效应相关;在Si1-x Gex:C缓冲层上外延生长的Ge薄膜具有单一的晶体取向,薄膜的晶体质量随着温度的升高而降低.     

红外电荷耦合器件(IRCCD)镀抗反射保护膜工艺探讨

为提高硅化物(如:Pd_2Si或PtSi)肖特基势垒单片式线阵(或面阵)红外CCD和InSb混合式红外CCD的量子效率;我们分别开展了在Si或InSb衬底上用低温低压化学汽相淀积(LTLPCVD)和等离子增强型化学汽相淀积(PECVD)法淀积SiO_2的实验工作。以减少器件表面上入射红外光能的反射损失,提高器件的光窗透过率、红外响应灵敏度和减少杂散光对器件的影响。     

气体流量比对PECVD硅化钛薄膜性质的影响

本文报道了以四氯化钛(TiCl_4)和硅烷(SiH_4)为源物质,采用等离子增强化学气相淀积工艺(PECVD)制备硅化钛薄膜的方法;着重研究了气体流量比变化对薄膜电阻率、淀积速率以及化学组成的影响,通过实验获得了制备优良硅化钛薄膜的最佳气流比条件。     

SiO2衬底上PECVD-Si1-xGex薄膜研究

在覆盖SiO2的n-Si(100)衬底上,采用等离子体增强化学沉积法(PECVD)制备Si1-xGex薄膜材料。薄膜Ge含量x及元素的深度分布由俄歇电子谱(AES)测定。对Si1-xGex进行热退火处理,以考察退火温度和时间对薄膜特性的影响。薄膜的物相通过X射线衍射(XRD)确定。基于XRD图谱,利用Scherer公式计算平均晶粒大小。Si1-xGex薄膜载流子霍尔迁移率由霍尔效应法测定。数值拟合得到霍尔迁移率与平均晶粒尺寸为近线性关系,从而得出PECVD-Si1-xGex薄膜的电输运特性基本符合Seto模型的结论。     

Auger analysis of the PbS-Si heterojunction

The chemical structure of the solution-grown PbS-Si hetero-junction was studied by Auger Electron Spectroscopy. Auger depth profiles indicate a PbS film of uniform composition. No major contaminants were observed in the bulk of the PbS film. At the PbS-Si interface the only impurity observed was an oxygen peak, corresponding to approximately 1% atomic concentration. Heating the growth solution enhances the chemical reaction and deposition rates without altering the profiles of the elements at the interface. Similar oxygen peaks were detected at the Au-PbS interface and at the interface between consecutive PbS films. The interface oxygen concentration in the PbS-Si (100) structure is roughly twice that present in the PbS-Si (111) structure. Heat treatment in air increased the interface and surface oxygen concentration by a factor of 2 to 5. The same treatment in N₂} ambient had only a slight effect on the surface oxygen concentration but enhanced the interface oxygen concentration. The oxygen at the Au-PbS interface showed similar sensitivity to heat treatment. Oxygen content at the interface of HJs formed on unpolished Si was double that in HJs formed on polished Si. The relative intensity of the S to Pb peaks in the bulk of the PbS film compares closely with that measured on the cleaved surface of natural single crystal galena. The Pb: S peak ratio was roughly constant throughout the PbS film and at the PbS-Si interface. Fe and Cl contaminants were observed at the surface of the PbS film, along with significant changes in the Pb:S ratio. The simultaneous detection of Pb, S and Si near the interface is attributed to the presence of surface irregularity caused by a secondary PbS macrostructure consisting of isolated chain-like clusters. This paper was presented in part at the Electronic Materials Conference, June 1979, Boulder, CO.     

PECVD法氮化硅薄膜生长工艺的研究

采用等离子体增强化学气相沉积法(PECVD),在单晶硅衬底(100)上成功制备了不同生长工艺条件下的氮化硅薄膜。分别采用XP-2台阶仪、椭圆偏振仪等手段测试了薄膜的厚度、折射率、生长速率等参数。并采用原子力显微镜(AFM)研究了薄膜的表面形貌。结果表明,温度和射频功率是影响薄膜生长速率的主要因素,生长速率变化幅度可以达到230nm/min甚至更高。对于薄膜折射率和成分影响最大的是NH3流量,折射率变化范围可以达到2.7～1.86。分析得出受工艺参数调控的薄膜生长速率对薄膜的性质有重要影响。     

PECVD法氮化硅薄膜制备工艺的研究

采用等离子体增强化学气相沉积法（PECVD）在单晶硅衬底上制备了氮化硅薄膜,分别使用膜厚仪、椭圆偏振仪等手段对薄膜的厚度、折射率等参数进行了表征。研究了硅烷氨气流量比、极板间距等工艺参数对氮化硅薄膜性能的影响,发现当硅烷氨气流量比增加时,薄膜厚度和折射率均随之增加,并发现退火工艺可以有效降低氮化硅薄膜的氢氟酸腐蚀速率。     

超薄硅基介质膜的制备技术与表征方法研究

在等离子体增强化学气相淀积(PECVD)系统中,采用等离子体氧化和等离子体氮化的方法,在单晶硅表面上成功制备厚度小于10nm的超薄硅基介质膜。通过X射线光电子谱(XPS)分析了超薄介质膜的化学结构,利用椭圆偏振仪测量了厚度以及折射率,同时对超薄介质膜进行了电容电压(C-V)和电流电压(I-V)特性的测量,研究其电学性质,探讨了C-V测量模式对超薄介质膜性质表征的影响,最后对两种介质膜的优缺点进行了比较。     

金属诱导法低温多晶硅薄膜的制备与研究

利用金属诱导晶化（Metal Induced Crystallization,MIC）的方法研究了a-Si/Ni的低温晶化,MIC晶化温度能降低到440℃.采用XRD、Raman、SEM、XPS等分析手段研究了Ni-MIC多晶硅薄膜的特性,对薄膜结构和组成进行了分析,对晶化过程的机理进行了讨论.     

非晶硅薄膜YAG激光微晶化晶粒生长研究

以单晶硅(111)为衬底,以等离子体增强化学气相沉积技术制备的非晶硅薄膜为前驱物,采用YAG激光晶化技术实现从非晶硅薄膜到纳米晶硅薄膜的相变过程。采用X射线衍射仪和原子力显微镜对YAG激光晶化薄膜进行了表征与分析。结果表明:薄膜的晶粒尺寸在纳米级;随着激光脉冲频率的增加,晶粒尺寸先变大后变小,其最佳结晶频率区间为10～12 Hz。     

SiCxNy：H薄膜的FTIR研究

用低温PECVD方法制备出成分连续可交的SiC_xN_y:H薄膜,用FTIR和AES方法分析了薄膜的组分。实验表明FTIR吸收谱可以快速地估计SiC_xN_y:H薄膜中N/N+C的比例,快速灯光退火薄膜的FTIR分析表明用PECVD制作的SiC_xN_y:H薄膜用做硅器件钝化膜具有较好的热稳定性。     

TEOS-based PECVD of silicon dioxide for VLSI applications

Silicon dioxide films deposited from tetraethylorthosilicate (TEOS) using plasma-enhanced chemical vapour deposition (PECVD) are reviewed. The effect of the presence of oxygen on the film deposition rate and mechanism and the physical properties of the films, particularly the step coverage properties (conformality), are discussed in detail. Structural characterisation of the films has been carried out via etch rate measurements, infrared transmission spectroscopy, X-ray photoelectron spectroscopy (XPS) and Auger and secondary ion mass spectroscopy (SIMS) analysis. Electrical properties, i.e. resistivity, breakdown strength, fixed oxide charge density, interface state density and trapping behaviour, have been evaluated using metal-oxide-semiconductor (MOS) structures fabricated using the deposited oxides. Films deposited by microwave plasma-enhanced decomposition of TEOS in the presence of oxygen have been found to be comparable with standard silane-based low-pressure chemical vapour deposition (LPCVD) and PECVD oxides. It has been shown that films deposited on thin native oxides grown by either in situ plasma oxidation or low-temperature thermal oxidation exhibit excellent electrical properties.     

Evaluation of 1/f Noise Characteristics for Si‐Based Infrared Detection Materials

Silicon antimony films are studied as resistors for uncooled microbolometers. We present the fabrication of silicon films and their alloy films using sputtering and plasma‐enhanced chemical vapor deposition. The sputtered silicon antimony films show a low 1/f noise level compared to plasma‐enhanced chemical vapor deposition (PECVD)‐deposited amorphous silicon due to their very fine nanostructure. Material parameter K is controlled using the sputtering conditions to obtain a low 1/f noise. The calculation for specific detectivity assuming similar properties of silicon antimony and PECVD amorphous silicon shows that silicon antimony film demonstrates an outstanding value compared with PECVD Si film.